1,721,142 research outputs found
MEMS-based technologies and smart detection systems for approaching ambient intelligence
No full textUso di metodologie laser per la costruzione di dispositivi micro-elettronici ed opto-elettronici
No full textOxide Growth Effects in Micron and Sub-Micron Field Regions: A Comparison Between Wet and Dry Oxidation
No full textThe silicon oxide growth in narrow spacing is affected by the compressive stress present in the oxide and a reduction of the growth rate (field oxide thinning) can occur. In this work it is shown that the stress present in the growing oxide under the oxidation mask induces a field oxide thickening phenomenon which is able to reduce the field oxide thinning one. Furthermore, the comparison between wet and dry oxidation points out the influence of the ammonia in developing the field oxide thinning
Silicon bulk micromachining for sensor technologies
No full textMicromachining and related technologies are needed to develop a large variety of sensors and actuators, i.e. the basic components of Microsystems or MEMS (MicroElectroMechanical Systems) as they are also commonly called. Microsystems are designed and fabricated by integrating different micocomponents into one functional unit comprising of sensors, actuators, I.C.s for data processing etc. In this development a variety of micromachining technologies, ranging from the conventional silicon bulk and surface micromachining to LIGA and LASER techniques are employed, each one having specific merits for specific products. This review focuses on silicon bulk micromachining applied to the fabrication of sensors suitable for being integrated into Microsystems, which are under development at IRST Microsystem Division
Ion Implanted Silicon Bolometers Operating in the Temperature Range 0.1-4.2°K
No full textSilicon bolometers have been obtained by phosphorous implantation on single crystal silicon substrates. These devices work like microcalorimeters. The wafer substrate acts as the energy absorber, while the implanted resistor is the temperature sensing element. For proper operation, the doping concentration of the thermistor is tailored near to the critical concentration of the metal insulator transition of the Si:P system. The optimum operating point is typically between 0.1 and 4.2K, depending on the specific application. In this work the basic physical principles of operation of thermal detectors are oulined, then the technology developed for the realization of high sensitivity, ion implanted thermistors is briefly discussed. Examples of applications of the device as molecular beam detector, alpha-particle or X-ray radiation detector is also presented
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