5,613 research outputs found
Radial density profile change near lower hybrid frequency in M=0 helicon wave plasmas
Radial density profiles are measured near the lower hybrid frequencies with various magnetic fields and frequencies in m = 0 mode helicon wave plasmas. Abrupt radial density changes occur near the lower hybrid frequency where the electron density is higher. Experiments under various conditions such as various magnetic fields and gases show that these phenomena occur near the lower hybrid frequencies. (C) 1998 Elsevier Science B.V
Production of high density plasma on the substrate in a helicon source and application to the deposition of SiOF film with low dielectric constant
Yeast metabolism in fresh and frozen dough : a thesis presented in partial fulfilment of the requirements for the degree of Doctor of Philosophy in Food Technology at Massey University, Palmerston North, New Zealand
Author also known as SM LovedayFresh bakery products have a very short shelf life, which limits the extent to which manufacturing can be centralised. Frozen doughs are relatively stable and can be manufactured in large volumes, distributed and baked on-demand at the point of sale or consumption. With appropriate formulation and processing a shelf life of several months can be achieved.Shelf life is limited by a decline in proofing rate after thawing, which is attributed to a) the dough losing its ability to retain gas and b) insufficient gas production, i.e. yeast activity. The loss of shelf life is accelerated by delays between mixing and freezing, which allow yeast cells the chance to ferment carbohydrates.This work examined the reasons for insufficient gas production after thawing frozen dough and the effect of pre-freezing fermentation on shelf life. Literature data on yeast metabolite dynamics in fermenting dough were incomplete. In particular there were few data on the accumulation of ethanol, a major fermentation end product which can be injurious to yeast.Doughs were prepared in a domestic breadmaker using compressed yeast from a local manufacturer and analysed for glucose, fructose, sucrose, maltose and ethanol. Gas production after thawing declined within 48 hours of frozen storage. This was accelerated by 30 or 90 minutes of fermentation at 30;C prior to freezing.Sucrose was rapidly hydrolysed and yeast consumed glucose in preference to fructose. Maltose was not consumed while other sugars remained. Ethanol, accumulated from consumption of glucose and fructose, was produced in approximately equal amounts to CO2, indicating that yeast cells metabolised reductively.Glucose uptake in fermenting dough followed simple hyperbolic kinetics and fructose uptake was competitively inhibited by glucose. Mathematical modelling indicated that diffusion of sugars and ethanol in dough occurred quickly enough to eliminate solute gradients brought about by yeast metabolism
Converting SrI <sub>2</sub> :Eu <sup>2+</sup> into a near infrared scintillator by Sm <sup>2+</sup> co-doping
The luminescence and scintillation properties of SrI 2 single crystals doped with 5% Eu 2+ and 0.05%, 0.2% and 0.5% Sm 2+ are evaluated. X-ray excited and photoluminescence measurements show energy transfer from excited Eu 2+ ions to Sm 2+ ions. At a concentration of 0.5% Sm 2+ , the luminescence consists almost entirely of 740 nm emission from Sm 2+ 5d-4f transitions. Co-doping SrI 2 :5% Eu 2+ with Sm 2+ provides a novel method to bypass the self-absorption problem encountered in large SrI 2 :Eu 2+ crystals and, at the same time, provides a unique near-infrared emitting scintillator with a light yield of approximately 40,000 photons/MeV. Accepted Author ManuscriptRST/Fundamental Aspects of Materials and EnergyRST/Luminescence Material
'Laws 'Needefull in Later to be Abrogated': Intersex and the Sources of Christian Theology
This is the author accepted manuscript. The final version is available from Palgrave Macmillan via the DOI in this record
Introduction: Troubling Bodies?
This is the author accepted manuscript. The final version is available from Palgrave Macmillan via the DOI in this record
Magnetic Domain Structure of Sm(Co, Cu, Fe, Zr)(x) Thick Permanent Magnetic Films
Thick permanent magnetic films have potential applications in magnetic microelectromechanical systems. In this paper, we systematically study the effect of deposition parameters including buffer layer, annealing condition and deposition temperature on the structure and magnetic properties of thick Sm-Co-Cu-Fe-Zr films fabricated by magnetron sputtering. It is found that W instead of Cr is more suitable for a buffer layer for preparing the high quality of Sm-Co-Cu-Fe-Zr films. With increasing annealing temperature, the phase in the film was changed from the 2:17 phase to the mixture of 1:5 and 2:17 phases. However, the cellular structure was not formed. The coercivity values of the films were not influenced by the cooling rate. The deposition temperature strongly affects the microstructure, texture and domain structure of the films. The Sm2Co17 phase in high-temperature deposited film prefers a (110) texture, while that in RT deposited film has a (110) and (200) texture. The magnetic domain structure observation indicates that the prepared Sm-Co-Cu-Fe-Zr films exhibit a character of interaction domain. The domain size of the films changes with the deposition temperature
Intrafullerene electron transfers in Sm-containing metallofullerenes: Sm@C-2n (74 <= 2n <= 84)
The electronic properties of Sm-containing metallofullerenes, Sm@C-74, Sm@C-76 (I, II), Sm@C-78, Sm@C-80, Sm@C-82 (I, II, III) and Sm@C-84 (I, II, III), are characterized by UV-Vis-NIR absorption spectroscopy and electron energy-loss spectroscopy (EELS). the UV-Vis-NIR absorption spectra of Sm@C-74, Sm@C-80, Sm@C-82 (I, II, III) and Sm@C-84 (I, II) are quite similar to those of the corresponding Ca, Sr, Ba, Eu, Tm, Yb-based metallofullerenes. In contrast, the absorption spectra of Sm@C-76 (I, II), Sm@C-78 and Sm@C-84(III) show a novel feature: the onset for Sm@C-78 is observed similar to 2600 nm, which corresponds to a small band gap (similar to0.5 eV). Furthermore, the oxidation states of Sm atom in the various fullerene cages are investigated by EELS, which reveals that the Sm atom takes +2 oxidation state in the fullerene cages. A probable rationale for the tendency to have the Sm2+ state is presented based on a simple thermochemical cycle model. (C) 2001 by Elsevier Science Inc.http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000168906500014&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=8e1609b174ce4e31116a60747a720701Biochemical Research MethodsBiochemistry & Molecular BiologyComputer Science, Interdisciplinary ApplicationsCrystallographyMathematical & Computational BiologySCI(E)EI30ARTICLE2244-2511
The deposition of SiOF film with low dielectric constant in a helicon plasma source
SiOF films deposited by a helicon wave plasma chemical vapor deposition method has been characterized using Fourier transform infrared spectroscopy and ellipsometry. High density plasma of ≳1012 cm−3 can be obtained on a substrate at low pressure (<10 mTorr) with rf power ≳400 W with a helicon plasma source. A gas mixture of SiF4, O2, and Ar was used to deposit SiOF films on 5 in. Si(100) wafers not intentionally heated. Optical emission spectroscopy was used to study the relation between the relative densities of the radicals and the deposition mechanism. It was found that the addition of Ar gas to the SiF4/O2 mixture greatly increased the F concentration in the SiOF film. Discharge conditions such as gas composition, sheath potential, and the relative densities of the radicals affect the properties of the film. The dielectric constant of the SiOF film deposited using the helicon plasma source was 3.1, a value lower than that of the oxide film by other methods. © 1996 American Institute of Physics
A finite element-based on-line model for the prediction of deformed roll profile in flat rolling
A sound model for the prediction of the deformed roll profile during rolling is vital for the precision control of the profile and shape of the product. In this paper, the prediction accuracy of the conventional models is examined, using the predictions from the finite element model as benchmarks. Then, it is shown that a new, precision on-line model can be developed on the basis of the finite element model. The prediction accuracy of the new model is demonstrated through comparison with the predictions from the finite element model.X116sciescopu
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