1,593 research outputs found
Thermal event records of the Chimei Igneous Complex: Constraint on the ages of magma activities and the structural implication based on fission track dating
No full textFission track age dating of Lutao volcanics: Implication of partial annealing and eruption history
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Orientation relationship transition of nanometre sized interphase precipitated TiC carbides in Ti bearing steel
No full textThe comparison of isolation technologies and device models on SiGe bipolar low noise amplifier
No full textJunction isolation is promising for cost reduction & high power circuit applications due to its relatively lower fabrication complexity & thermal conductivity, but larger area & collector-substrate capacitance (Ccs) seem drawbacks as compared to the deep trench isolation (DTI) technology. A simulation work is proposed for the size selection guide of unit cell to have the low cost benefit of junction isolation without sacrificing the gain & noise performance of the low noise amplifier (LNA) operated at 5.2 GHz
Temperature-Dependent Physical and Memory Characteristics of Atomic-Layer-Deposited<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:msub><mml:mrow><mml:mtext>RuO</mml:mtext></mml:mrow><mml:mi>x</mml:mi></mml:msub></mml:mrow></mml:math>Metal Nanocrystal Capacitors
Full text linkPhysical and memory characteristics of the atomic-layer-depositedRuOxmetal nanocrystal capacitors in an n-Si/SiO2/HfO2/RuOx/Al2O3/Pt structure with different postdeposition annealing temperatures from 850–1000°C have been investigated. TheRuOxmetal nanocrystals with an average diameter of 7 nm and a highdensity of 0.7 × 1012/cm2are observed by high-resolution transmission electron microscopy after a postdeposition annealing temperature at 1000°C. The density ofRuOxnanocrystal is decreased (slightly) by increasing the annealing temperatures, due to agglomeration of multiple nanocrystals. The RuO3nanocrystals and Hf-silicate layer at the SiO2/HfO2interface are confirmed by X-ray photoelectron spectroscopy. For post-deposition annealing temperature of 1000°C, the memory capacitors with a small equivalent oxide thickness of ~9 nm possess a large hysteresis memory window of >5 V at a small sweeping gate voltage of ±5 V. A promising memory window under a small sweeping gate voltage of ~3 V is also observed due to charge trapping in theRuOxmetal nanocrystals. The program/erase mechanism is modified Fowler-Nordheim (F-N) tunneling of the electrons and holes from Si substrate. The electrons and holes are trapped in theRuOxnanocrystals. Excellent program/erase endurance of 106cycles and a large memory window of 4.3 V with a small charge loss of ~23% at 85°C are observed after 10 years of data retention time, due to the deep-level traps in theRuOxnanocrystals. The memory structure is very promising for future nanoscale nonvolatile memory applications.</jats:p
Observations of second baroclinic mode internal solitary waves on the continental slope of the northern South China Sea
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