1,721,003 research outputs found
Transient Study of Self-heating Effects in AlGaN/GaN HFETs: Consequence of Carrier Velocities, Temperature, and Device Performance
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Study of Polarization Properties of Light Emitted from a-plane InGaN/GaN Quantum Well-based Light Emitting Diodes
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Polarization Effects in Semiconductors - From Ab InitioTheory to Device Applications - Chapter II : Lateral and Vertical Charge Transport in Polar Nitride Heterostructures: Applications for HEMTs, Novel Vertical Junction and Sensors
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Electronic and optical properties of InGaN quantum dot based light emitters for solid state lighting
No full textSize-Dependent Strain Relaxation and Emission Characteristics of InGaN/GaN Nanorod Light Emitting Diodes
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Ripples, phonons and bandgap in strained graphene
No full textUsing a novel interatomic force field, called MMP, we study the morphology of Graphene layers under a variety of strain conditions. We report that strain induced ripples possess the 'right' kind of elastic deformation that is necessary in order to produce appreciable bandgap opening, which we calculate using Tight Binding, even for low enough strain that can be accessed through realistic means. At the same time the vibrational properties, calculated from analytic derivatives of the MMP force field and used within the dynamics matrix method, can be easily linked to strain obtained from Molecular Dynamics, opening the way for accurate modelling of Raman data. We also show that our models have allowed us to realize in practice novel devices based on our predictions.</p
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