162,693 research outputs found
Warner (Wellmann J.), The Wesleyan Movement in the Industrial Revolution, 1930
No full textSée Henri. Warner (Wellmann J.), The Wesleyan Movement in the Industrial Revolution, 1930. In: Revue d'histoire moderne, tome 5 N°27,1930. pp. 225-226
Optimized protocol for biolistic transfection of brain slices and dissociated cultured neurons with a hand-held gene gun
No full textWellmann H, Kaltschmidt B, Kaltschmidt C. Optimized protocol for biolistic transfection of brain slices and dissociated cultured neurons with a hand-held gene gun. J. Neurosci. Meth. 1999;92(1-2):55-64
Retrograde transport of transcription factor NF-kB in living neurons
No full textWellmann H, Kaltschmidt B, Kaltschmidt C. Retrograde transport of transcription factor NF-kB in living neurons. J Biol Chem. 2001;276(15):11821-11829
[Report to Chief J. E. Curry, by an unknown author #1]
No full textReport to Chief J. E. Curry, by an unknown author. The report contains a list of officers who gave depositions to the United States Attorney
[Report to Chief J. E. Curry, by an unknown author #2]
No full textReport to Chief J. E. Curry, by an unknown author. The report contains a list of officers who gave depositions to the United States Attorney
Von der Abschaffung der Wissenschaften. Zur Geschichte und Zukunft des Mittelbaus in der Wissenschafts‑, Medizin- und Technikgeschichte
No full textSammer C, Wellmann J, Oßmer C, Zumbrägel C. Von der Abschaffung der Wissenschaften. Zur Geschichte und Zukunft des Mittelbaus in der Wissenschafts‑, Medizin- und Technikgeschichte. NTM Zeitschrift für Geschichte der Wissenschaften, Technik und Medizin. 2024;32(3):251-257
Influence of dislocation content on the quantitative determination of the doping level distribution in n-GaAs using absorption mapping
No full textIn an earlier paper [P.J. Wellmann, A. Albrecht, U. Künecke, B. Birkmann, G. Mueller, M. Jurisch, Eur. Phys. J. Appl. Phys. 27, 357 (2004)] an optical method based on whole wafer absorption measurements was presented to determine the charge carrier concentration and its lateral distribution in n-type (Si/Te) doped GaAs. The submitted results for Si-doped GaAs gave rise to questions concerning the interpretation of absorption mappings in wafers with high dislocation densities. GaAs substrates for optoelectronic devices are strongly affected by dislocations. Therefore further studies were conducted: absorption and Hall measurements were performed on GaAs:Si wafers with high and low dislocation densities. Absorption in Si-doped GaAs is far more complex than in Te-doped GaAs. It shows a co-dependency on charge carrier concentration and dislocation content which causes complications in the quantitative optical determination of the charge carrier concentration. Qualitatively, absorption mappings depict dislocations and variations of charge carrier concentration very well
Influence of dislocation content on the quantitative determination of the doping level distribution in n-GaAs using absorption mapping
No full textIn an earlier paper [P.J. Wellmann, A. Albrecht, U. Künecke, B. Birkmann, G. Mueller, M. Jurisch, Eur. Phys. J. Appl. Phys. 27, 357 (2004)] an optical method based on whole wafer absorption
measurements was presented to determine the charge carrier concentration and
its lateral distribution in n-type (Si/Te) doped GaAs. The submitted results
for Si-doped GaAs gave rise to questions concerning the interpretation of
absorption mappings in wafers with high dislocation densities. GaAs
substrates for optoelectronic devices are strongly affected by
dislocations. Therefore further studies were conducted: absorption and
Hall measurements were performed on GaAs:Si wafers with high and low
dislocation densities.
Absorption in Si-doped GaAs is far more complex than in Te-doped GaAs. It
shows a co-dependency on charge carrier concentration and dislocation
content which causes complications in the quantitative optical determination
of the charge carrier concentration. Qualitatively, absorption mappings
depict dislocations and variations of charge carrier concentration very
well
Murder on the mountain: author talk with Peter J. Wosh
No full textAuthor talk by Peter J. Wosh on May 5th, 2022, on his book, "Murder on the Mountain: crime, passion, and punishment in gilded age New Jersey.
Mr. Melvin J. Collier, RWWL AUC, June 2011
No full textThis video is a conversation with Mr. Melvin J. Collier. Mr. Collier talks about his book, "From Mississippi to Africa: A Journey of Discovery". Daniel Le, AUC Woodruff Library, is the interviewer
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