1,232 research outputs found
sj-docx-1-jet-10.1177_15266028221133700 – Supplemental material for Management Strategy and Radiologic Outcomes of Symptomatic Spontaneous Isolated Superior Mesenteric Artery Dissection Based on Angiographic Classification: The Follow-Up Experience in a Single Center
No full textSupplemental material, sj-docx-1-jet-10.1177_15266028221133700 for Management Strategy and Radiologic Outcomes of Symptomatic Spontaneous Isolated Superior Mesenteric Artery Dissection Based on Angiographic Classification: The Follow-Up Experience in a Single Center by Zihui Yuan, Guofu Hu, Shi Sheng, Yun You and Jian Wang in Journal of Endovascular Therapy</p
sj-jpg-2-jet-10.1177_15266028221133700 – Supplemental material for Management Strategy and Radiologic Outcomes of Symptomatic Spontaneous Isolated Superior Mesenteric Artery Dissection Based on Angiographic Classification: The Follow-Up Experience in a Single Center
No full textSupplemental material, sj-jpg-2-jet-10.1177_15266028221133700 for Management Strategy and Radiologic Outcomes of Symptomatic Spontaneous Isolated Superior Mesenteric Artery Dissection Based on Angiographic Classification: The Follow-Up Experience in a Single Center by Zihui Yuan, Guofu Hu, Shi Sheng, Yun You and Jian Wang in Journal of Endovascular Therapy</p
A Critique of the Stochastic Discount Factor Methodology
No full textIn this paper, we point out that the widely used stochastic discount factor (SDF) methodology ignores a fully specified model for asset returns. As a result, it suffers from two potential problems when asset returns follow a linear factor model. The first problem is that the risk premium estimate from the SDF methodology is unreliable. The second problem is that the specification test under the SDF methodology has very low power in detecting misspecified models. Traditional methodologies typically incorporate a fully specified model for asset returns, and they can perform substantially better than the SDF methodology.
Electrochemical Water Splitting by Pseudo-spinel, Disordered and Layered Lithium Nickel Oxides: Correlation between Structural Motifs and Catalytic Properties
No full textIn this work, three different structures of lithium nickel oxide (LNO) synthesized by simple methods as inexpensive and efficient electrocatalyst for OER were presented. The catalytic activities of LNO catalysts for OER were pseudo-spinel (PS-LiNiO2) > disordered (DO-LiNiO2) > layered (L-LiNiO2) lithium nickel oxide. Particularly, PS-LiNiO2 demonstrated much lower tafel slope of 62 mV dec(-1) with the highest durability whereas the layered LNO catalysts exhibited the higher tafel slope of 88 mV dec (-1), respectively. To elucidate the origin of high activities of LNO catalysts, three structures of LNO were studied by EXAFS measurements and DFT theoretical calculation. Compared to L-LiNiO2, PS-LiNiO2, including Ni4O4 cubane structural motifs, exhibited higher valent states and lower Ni d-band center to drive the catalytic reaction. Thus, our results demonstrated that the activities of LNO can be optimized by controlling the value states, chemical and local electronic structure of Ni via novel design approaches
Electrochemical Water Splitting by Pseudo-spinel, Disordered and Layered Lithium Nickel Oxides: Correlation between Structural Motifs and Catalytic Properties
No full textIn this work, three different structures of lithium nickel oxide (LNO) synthesized by simple methods as inexpensive and efficient electrocatalyst for OER were presented. The catalytic activities of LNO catalysts for OER were pseudo-spinel (PS-LiNiO2) > disordered (DO-LiNiO2) > layered (L-LiNiO2) lithium nickel oxide. Particularly, PS-LiNiO2 demonstrated much lower tafel slope of 62 mV dec(-1) with the highest durability whereas the layered LNO catalysts exhibited the higher tafel slope of 88 mV dec (-1), respectively. To elucidate the origin of high activities of LNO catalysts, three structures of LNO were studied by EXAFS measurements and DFT theoretical calculation. Compared to L-LiNiO2, PS-LiNiO2, including Ni4O4 cubane structural motifs, exhibited higher valent states and lower Ni d-band center to drive the catalytic reaction. Thus, our results demonstrated that the activities of LNO can be optimized by controlling the value states, chemical and local electronic structure of Ni via novel design approaches
Corrigendum to “Photopolymerization-Enforced Stratification in Liquid Crystal Materials” [Progress in Polymer Science. 114, 2021, 101365]
No full textThe authors regret to inform that…. The author information and affiliation need to be corrected as below. Wei Zhaoa,b,*, Laurens T. de Haana,b, Dirk J. Broera,c, Yang Zhangd, Pengrong Lva, Guofu Zhoua,b,e,* a SCNU-TUE Joint Lab of Device Integrated Responsive Materials (DIRM), National Center for International Research on Green Optoelectronics, South China Normal University, No 378, West Waihuan Road, Guangzhou Higher Education Mega Center, 510006, Guangzhou China b Guangdong Provincial Key Laboratory of Optical Information Materials and Technology & Institute of Electronic Paper Displays, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, PR China c Stimuli‐responsive Functional Materials and Devices, Department of Chemical Engineering and Chemistry, Eindhoven University of Technology, Den Dolech 2, Eindhoven, 5600 MB, the Netherlands d Solar Energy Research Institute, Yunnan Normal University, Kunming 650500, China e Shenzhen Guohua Optoelectronics Tech. Co. Ltd., Shenzhen 518110, China Author would like to apologize for the inconvenience caused
Investigation of RF Noise in 28nm RF CMOS Using TCAD
No full textState of art of 28 nm RF MOSFET is studied using sentaurus process and device tools.
DC characteristics, such as C-V, Rs, Rd and I-V curves are calibrated by adjustment of
physics model. The relationship between saturation velocity (vsat), energy relaxation time
(τ) and high field mobility are studied. What’s more, RF noise simulated with different vsat
and τ is presented. The lower these two parameters are, the lower noise parameter we ge
AlGaN/GaN HEMT DC Simulation
No full textIncreasing demand in high power and high frequency semiconductor devices has promoted
the rapid development of microwave power devices using GaN and SiC. Characteristics
like high breakdown voltage and high electron mobility enable AlGaN/GaN HEMT
the possibility to be utilized as high power RF devices. However, obstacles prevent the
widely utilization of AlGaN/GaN transistor in this field. It has been generally recognized
the superabundant trap density in GaN and AlGaN material limits the performance of the
devices by bringing in reliability issues like current collapse and gate-lag. Lattice mismatch
in GaN and AlGaN and abrupt heterojunction interface of AlGaN/GaN contribute to the
unstable performance while high voltage is applied to drain contact which will cause high
field between thin layer of AlGaN/GaN interface.
An overall introduction to HEMT physics will be presented in chapter 2 of this work.
Attention will be paid to the performance degradation analysis caused by issues such as trapping
effect, self-heating, displacement damage and high voltage induced lattice mismatch.
The chapter 3 of this work presents a process to use TCAD simulation tool to match
the simulation results with measurements from real devices starting from building device
structure. Adjustments of parameters including gate barrier height, electron mobility, polarization
coefficients and parasitic resistance will be made to fit the measurements
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