2,125 research outputs found
Research on 7-distance set with DG(XD)=C11
No full textA planar point set X is called a k-distance set if there are exactly k distances between two distinct points in X. Let d(x,y) be the distance of any two distinct points x,y. Let diameter D=D(X) be the longest distance of X. The diameter graph DG(XD) is composed of all diameters in X, where XD is the set of its endpoints. In this paper, the configuration of the diameter graph DG(XD) is discussed when X is a 7-distantce set. It is proved that the endpoint set XD is the endpoint set of the regular 11-sided polygon when the diameter graph has 11 cycles based on the characteristics of DG(XD) containing at most one and only odd cycle and the diameter specialty
Determination of the optimal active area for proton exchange membrane fuel cells with parallel, interdigitated or serpentine designs
No full textPARKES REVISITED - EFFECT OF ELASTIC-DEFORMATION AT THE ROOT OF A CANTILEVER BEAM
No full textParkes' problem is re-analysed by setting an elastic-plastic rotational spring at the root of the cantilever beam, instead of the usual fully clamped constraint there. The cantilever beam is still assumed to be rigid-plastic, but the spring-beam system has a certain capacity for storing elastic deformation energy. The present analysis indicates that after the beam is struck by a rigid mass at its tip, the response of the system could be one of the following three modes: (i) mode I, a plastic hinge travels from the tip to the root, but before it reaches the root, the root spring enters into its plastic state and creates a new hinge there. After the travelling hinge reaches the root, it becomes the only plastic hinge and absorbs the remaining kinetic energy, so this mode is similar to Parkes' rigid-plastic solution; (ii) mode II(a), the travelling hinge disappears at an internal point of the beam, and only elastic deformation takes place thereafter; and (iii) mode II(b), the travelling hinge disappears at an internal point at the beam, but the remaining kinetic energy still results in a plastic hinge at the root. It is confirmed that the ratio of the energy that can be stored in the system to the input energy has a dominant effect on the response modes, whilst the mass ratio has a dominant effect on the proportion of the input energy dissipated plastically in the travelling hinge stage.http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:A1991FX75300006&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=8e1609b174ce4e31116a60747a720701Engineering, MechanicalMechanicsSCI(E)EI8ARTICLE2197-2091
Master reference list of equipment specifications for XD-1
No full textEach document provides the following information: IBM and/or MIT document numbers; title, author, and date; date of IBM-MIT concurrence and/or Lincoln release; a Lincoln Laboratory Division 6 document room file number; and a "required" column indicating the date when the particular document is to have been implemented.List of documents that form the equipment specifications for XD-1
Data for "Improvements to the fracture pipe network model for complex 3D discrete fracture networks"
No full textThis dataset contains all of the parameters of the Discrete Fracture Networks (DFNs) , for example, the coordinates, the aperture of the DFNs. The format of the files is:
first line: number of fractures
the following lines:
fracture index, fracture coordinates (xA, yA, zA, xB, yB, zB, xC, yC, zC), fracture aperture (unit: microns)
All fractures are square shape, so their coordinates of point D can be calculated easily, eg, xD=xA+xC-xB.
When using the data, cite it as follows: Wang, Chenhui (2020), “Data for "Improvements to the fracture pipe network model for complex 3D discrete fracture networks"”, Mendeley Data, V1, doi: 10.17632/c8r645tj9v.1 Please also cite the reference article that this dataset belongs to
ALGORITHM METHOD OF CORRELATION POSITION FOR AUTOMATIC ALIGNMENT IN MICROCIRCUIT FABRICATION
No full textStudy of self-assembled InAs quantum dots grown on low temperature GaAs epi-layer
No full textInAs self-organized quantum dots (QDs) grown on annealed low temperature GaAs (LT-GaAs) epi-layer were investigated by transmission electron microscopy (TEM) and photoluminescence (PL) measurement. TEM showed that QDs formed on annealed LT-GaAs epi-layer have a smaller size and a higher density than QDs formed on normal GaAs buffer layer. In addition, the PL spectra analysis showed that the LT-GaAs epi-layer resulted in a blue shift in peak energy, and a narrower linewidth in the PL peak. The differences were attributed to the point defects and As precipitates in annealed LT-GaAs epi-layer for the point defects and As precipitates change the strain field of the surface. The results provide a method to improve the uniformity and change the energy band structure of the QDs by controlling the defects in the LT-GaAs epi-layer
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