564 research outputs found
Linearized radially polarized light for improved precision in strain measurements using micro-Raman spectroscopy
No full textsponsorship: Horizon 2020 Framework Programme (823717 -ESTEEM3); GOA project ("Solarpaint"); Herculesstichting. (Horizon 2020 Framework Programme|823717 -ESTEEM3, GOA project ("Solarpaint"), Herculesstichting)status: Publishe
High-sensitivity Rutherford backscattering spectrometry employing an analyzing magnet and silicon strip detector
No full text© 2018 Elsevier B.V. Rutherford backscattering spectrometry (RBS) is an analysis method to quantify reference free the atomic areal density of a thin film, in particular sensitive to those cases where the elements of the film are heavier than the substrate. The ultimate sensitivity is determined by the ratio between the signal intensity from the thin film and the background signal originating from e.g. pulse pile-up events related to the scattering from the substrate atoms or dark noise intrinsic to the detector. We demonstrate that the sensitivity of RBS can be improved by reducing the pulse pile-up and dark noise background through the implementation of a magnet sector and a silicon strip detector as combined double energy dispersive analyzer. A limit-of-detection of 3∙1011 Ru/cm2 on Si is achieved.status: Publishe
Understanding the effect of confinement in scanning spreading resistance microscopy measurements
No full textScanning spreading resistance microscopy (SSRM) is a powerful technique for quantitative two-and three-dimensional carrier profiling of semiconductor devices with sub-nm spatial resolution. However, considering the sub-10 nm dimensions of advanced devices and the introduction of three-dimensional architectures like fin field effect transistor (FinFET) and nanowires, the measured spreading resistance is easily impacted by parasitic series resistances present in the system. The limited amount of material, the presence of multiple interfaces, and confined current paths may increase the total resistance measured by SSRM beyond the expected spreading resistance, which can ultimately lead to an inaccurate carrier quantification. Here, we report a simulation assisted experimental study to identify the different parameters affecting the SSRM measurements in confined volumes. Experimentally, the two-dimensional current confinement is obtained by progressively thinning down uniformly doped blanket silicon on insulator wafers using scalpel SSRM. The concomitant SSRM provides detailed electrical information as a function of depth up to oxide interface. We show that the resistance is most affected by the interface traps in case of a heterogeneous sample, followed by the intrinsic resistance of the current carrying paths. Furthermore, we show that accurate carrier quantification is ensured for typical back contact distances of 1 μm if the region of interest is at least nine times larger than the probe radius. © 2020 Author(s)
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