1,720,976 research outputs found
Simulation studies of a β-SiC on insulator Pockels phase modulator
No full textWe have designed waveguide modulators using β-SiC-on-insulator waveguides and the Pockels effect. A 2D semiconductor device simulator was used to determine the electric field configuration in a double-Schottky diode structure. This allowed us to evaluate the local modulation of the refractive index as a function of applied external bias and to determine the effective index modulation of the guided mode. The optical simulations were performed using the Spectral Index and the Effective Index methods. Different 2D geometries are analyzed and the material parameters needed for fabricating such a device are determined. Application to Mach-Zehnder intensity modulators is described. Such devices have potential for high-speed Si-based photonic devices compatible with silicon technology
β-SiC on insulator structures for modulators and sensor systems
No full textIn this work waveguide structures using the cubic polytype of SiC are analyzed. The β-SiC-on-insulator wageguides were fabricated by two different methods. In the first case, a technological process similar to that used for SIMOX material was used, a buried SiO2 layer being formed by high-energy (∼2 MeV) ion implantation of oxygen in SiC/Si wafers. For the second case, the heteroepitaxy of SiC on SOI (SIMOX) wafers was used. The losses of the waveguides have been measured at 0.633, 1.3 and 1.55 μm in both TE and TM polarization and a detailed analysis and interpretation of the different loss mechanisms is presented. Using these two types of waveguides we have designed waveguide modulators using the Pockels effect. A 2D semiconductor device simulator was used to determine the electric field configuration in a double-Schottky diode structure and the local modulation of the refractive index was used to determine the effective index modulation of the guided mode. Optical simulations were performed using the spectral index and the effective index methods. Different 2D geometries are analyzed and the material parameters needed for fabricating such a device are determined. Such devices have potential for high-speed Si-based photonic devices compatible with silicon technology
Effects of grating heights on highly efficient Unibond SOI waveguide grating coupler
No full textWe report the first successful experimental evaluation of the effect of grating height upon the output efficiency of grating couplers as predicted using perturbation theory. In addition, we have also produced a grating with an output efficiency of 70%, which is the highest efficiency yet reported for a silicon-on-insulator waveguide grating coupler
Loss Measurements for β-SiC on insulator waveguides for high speed silicon based photonic devices
No full textIn this work planar planar β-SiC-on-insulator waveguides were investigated. The waveguides were fabricated by two different methods. In the first a technological process similar to that of SIMOX was used, and therefore a buried SiO2 layer was formed by high energy ion implantation of oxygen in SiC/Si wafers. For the second type of waveguides we used heteroepitaxy of SiC on SOI (SIMOX). The losses have been measured at 0.633, 1.3 and 1.55 µm in both TE and TM polarization. A detailed analysis of the different loss mechanisms is presented. These types of waveguides have potential for high-speed silicon-based photonic devices compatible with silicon technology
Silicon-on-Insulator based grating couplers
No full textAbout the meeting:PREP '99 was held in Manchester, UK at the University of Manchester Institute of Science and Technology when some hundred oral and poster presentations were made by postgraduate students. One of the most important features of this student conference was that many were presenting their work in public for the first time. There was no doubt that the young researchers responded enthusiastically to the challenge of presenting and publishing their research results to a wider audience and, particularly to their own generation of researchers. This was claimed to be the first student-focused conference in the UK that concentrated on electrons, photonics and related fields.The range of topics covered included presentations that covered innovative ideas in many areas such as: computer methods, sensors, device physics, materials fabricator techniques and digital and analogue circuitry.PREP was sponsored by the Engineering and Physical Sciences Research Council (EPSRC, UK), the IEE, the IEEE and IOP
0.15 dB/cm loss in Unibond SOI waveguides
No full textThe optical loss of Unibond waveguides is measured and reported for the first time, using grating couplers. At a wavelength of 1.3 µm, a loss of 0.15 ±0.05 dB/cm is obtained for TE polarisation. This allows good quality low loss integrated optical circuits to be fabricated at low cost
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