48 research outputs found

    Size effect in the electronic transport of thin films of Bi2Se3

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    Thin films of a topological insulator (TI) Bi2Se3 of various thicknesses from 20 nm to 75 nm were obtained. The resistivity measurements were carried out according to the conventional 4-contact DC technique. This allows to “separate” the bulk and surface conductivities at different temperatures and magnetic fields. It was suggested that similar effects should be observed in other TIs and systems with inhomogeneous distribution of dc-current on sample cross section

    Electroresistive and magnetoresistive properties of Nd0.7Sr0.3MnO3 after quenching under pressure of 9GPa

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    Polycrystalline Nd0.7Sr0.3MnO3 was quenched from 1300 K to 300 K and 80 K after it had been subjected to a high quasihydrostatic pressure of 9 GPa. Such high pressure and high temperature treatment (HPT) results in significant changes of the crystallochemical parameters-Mn-O lengths and Mn-O-Mn angles within unchanged lattice symmetry of the Pnma-type. A strong increase of the resistivity and a large decrease of the FM-PI transition temperature were detected for the Nd0.7Sr0.3MnO3 HPT treated samples. The intrinsic characteristic T-MI(T-C) (T-MI is the metal-insulator and T-C is the ferromagnetic-paramagnetic transition temperature) correlates with the change of the Mn-O(1)-Mn angle, which is consistent with the double exchange model of the ferromagnetic metallic state in manganites. Remarkable electroresistive (ER) and magnetoresistive (MR) effects appear after HPT treatment, which were not present in the starting Nd0.7Sr0.3MnO3 sample. The structure sensitive properties such as resistivity, MR and ER effects correlate with the change of the nanograin sizes after HPT treatment. Nonlinear current-voltage characteristics showing a hysteresis appear for HPT treated samples at low temperatures. The transport in granular Nd0.7Sr0.3MnO3 samples is likely defined by spin-dependent scattering of charge carriers inside the ferromagnetic metallic grains with embedded small charged isolating islands and by jumping over charged insulating barriers at the intergrain boundaries, which can be strongly affected by the external electric and magnetic fields. (C) 2011 Elsevier B.V. All rights reserved
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