387 research outputs found
JETP Letters V. 76, I. 09
No full textJETP Letters -- November 10, 2002
Volume 76, Issue 9, pp. 545-589
FIELDS, PARTICLES, AND NUCLEI
Improved Limits on beta– and beta–beta– Decays of 48Ca
A. Bakalyarov, A. Balysh, A. S. Barabash, P. Benes, Ch. Briançon, V. Brudanin, P. Cermák, V. Egorov, F. Hubert, Ph. Hubert, N. A. Korolev, V. N. Kosjakov, A. Kovalik, N. A. Lebedev, V. I. Lebedev, A. F. Novgorodov, N. I. Rukhadze, N. I. Stekl, V. V. Timkin, I. E. Veleshko, Ts. Vylov, and V. I. Umatov
pp. 545-547 Full Text: PDF (41 kB)
NONLINEAR DYNAMICS
Ionization Spectrum Transformation and Compression of Powerful Femtosecond Laser Pulses in Experiments on the Propagation in Gas-Filled Dielectric Capillaries
A. A. Babin, D. V. Kartashov, A. M. Kiselev, V. V. Lozhkarev, A. M. Sergeev, A. A. Solodov, and A. N. Stepanov
pp. 548-552 Full Text: PDF (63 kB)
CONDENSED MATTER
On the Theory of Boson Peak in Glasses
V. L. Gurevich, D. A. Parshin, and H. R. Schober
pp. 553-557 Full Text: PDF (76 kB)
Alternative Approach for Evaluation of Mössbauer Spectra of Nanostructured Ferromagnetic Alloys within Generalized Two-Level Relaxation Model
M. A. Chuev, O. Hupe, A. M. Afanas'ev, H. Bremers, and J. Hesse
pp. 558-562 Full Text: PDF (70 kB)
Multicomponent Dense Electron Gas as a Model of Si MOSFET
S. V. Iordanski and A. Kashuba
pp. 563-567 Full Text: PDF (72 kB)
Steps on Current–Voltage Characteristics of a Silicon Quantum Dot Covered by Natural Oxide
S. V. Vyshenski, U. Zeitler, and R. J. Haug
pp. 568-571 Full Text: PDF (50 kB)
Anomalously High Raman Scattering Cross Section for Carbon–Carbon Vibrations in trans-Nanopolyacetylene
D. Yu. Paraschuk, I. V. Golovnin, A. G. Smekhova, and V. M. Kobryanskii
pp. 572-574 Full Text: PDF (47 kB)
Effect of Screening by Two-Dimensional Charge Carriers on the Binding Energy of Excitonic States in GaAs/AlGaAs Quantum Wells
S. I. Gubarev, O. V. Volkov, V. A. Koval'skii, D. V. Kulakovskii, and I. V. Kukushkin
pp. 575-578 Full Text: PDF (69 kB)
Boundary Conditions to the Ginzburg–Landau Equations at the Twinning Plane in a (d + s) Superconductor
E. A. Shapoval
pp. 579-583 Full Text: PDF (79 kB)
MISCELLANEOUS
Transmission Capability of a Sequential Relativistic Quantum Communication Channel with Limited Observation Time
S. N. Molotkov
pp. 584-589 Full Text: PDF (69 kB)Archived web conten
JETP Letters V. 76, I. 05
No full textJETP Letters -- September 10, 2002
Volume 76, Issue 5, pp. 235-325
GRAVITY, ASTROPHYSICS
Trans-Planckian Particle Creation in Cosmology and Ultrahigh Energy Cosmic Rays
A. A. Starobinsky and I. I. Tkachev
pp. 235-239 Full Text: PDF (61 kB)
Black-Hole Horizon and Metric Singularity at the Brane Separating Two Sliding Superfluids
G. E. Volovik
pp. 240-244 Full Text: PDF (71 kB)
FIELDS, PARTICLES, AND NUCLEI
Recoil Effect in the beta Decay of Molecular Tritium
V. I. Savichev
pp. 245-248 Full Text: PDF (54 kB)
High-Energy QCD Asymptotic Behavior of Photon–Photon Collisions
S. J. Brodsky, V. S. Fadin, V. T. Kim, L. N. Lipatov, and G. B. Pivovarov
pp. 249-252 Full Text: PDF (63 kB)
NONLINEAR DYNAMICS
Self-Generation of Spin-Wave Envelope Soliton Trains with Different Periods
B. A. Kalinikos, N. G. Kovshikov, M. P. Kostylev, and H. Benner
pp. 253-257 Full Text: PDF (68 kB)
ATOMS, SPECTRA, RADIATIONS
Plateau Effects in the Spectra of Electrons Scattered from Atoms in a Strong Laser Field
N. L. Manakov, A. F. Starace, A. V. Flegel', and M. V. Frolov
pp. 258-263 Full Text: PDF (87 kB)
Magnetic Coherence Transfer Induced by Discharge Radiation and the Effect of Radiation Trapping on the Lifetime of the Hidden Alignment of Ne Terms
É. G. Saprykin, S. N. Seleznev, and V. A. Sorokin
pp. 264-269 Full Text: PDF (94 kB)
Confinement of Atoms with Nondegenerate Ground States in a Three-Dimensional Dissipative Optical Superlattice
I. V. Krasnov and S. P. Polyutov
pp. 270-274 Full Text: PDF (66 kB)
The Formation of a Light Field with Suppressed Photon Fluctuations by Nonlinear Optical Methods
A. V. Nikandrov and A. S. Chirkin
pp. 275-278 Full Text: PDF (60 kB)
Multiple Scattering Effect on the Line Width of Parametric X-Ray Relativistic Electron Radiation in a Crystal
N. F. Shul'ga and M. Tabrizi
pp. 279-282 Full Text: PDF (46 kB)
PLASMA, GASES
Generating Intense Beams of Low-Energy Molecules
G. N. Makarov
pp. 283-286 Full Text: PDF (52 kB)
CONDENSED MATTER
Coulomb Singularity Effects in the Tunneling Spectroscopy of Individual Impurities
P. I. Arseyev, N. S. Maslova, V. I. Panov, and S. V. Savinov
pp. 287-290 Full Text: PDF (76 kB)
Instability of the Magnetization Reversal Front in Superconductors with a Nonlinear Anisotropic Current–Voltage Characteristic
A. L. Rakhmanov, L. M. Fisher, A. A. Levchenko, V. A. Yampol'skii, M. Baziljevich, and T. H. Johansen
pp. 291-294 Full Text: PDF (53 kB)
The Special Features of the Ground State in CeAl3
V. N. Lazukov, P. A. Alekseev, N. N. Tiden, K. Bek, E. S. Klement'ev, and I. P. Sadikov
pp. 295-298 Full Text: PDF (57 kB)
Temperature-Induced Orientational Transition of Nematics on the Surface of a Ferroelectric Crystal
A. M. Parshin, V. A. Gunyakov, and V. F. Shabanov
pp. 299-301 Full Text: PDF (42 kB)
Non-BCS Pairing in Anisotropic Strongly Correlated Electron Systems in Solids
V. A. Khodel and J. W. Clark
pp. 302-306 Full Text: PDF (68 kB)
Magnetic Field Effect on the Photoluminescence of an Eu Impurity during Its Aggregation in NaCl Crystals
R. B. Morgunov, S. Z. Shmurak, B. K. Ponomarev, A. A. Baskakov, and V. I. Kulakov
pp. 307-311 Full Text: PDF (73 kB)
Nonlinear NMR in a Superfluid B Phase of 3He in Aerogel
V. V. Dmitriev, V. V. Zavjalov, D. E. Zmeev, I. V. Kosarev, and N. Mulders
pp. 312-317 Full Text: PDF (90 kB)
Hydrogen Tunneling Modes in alpha-Mn Suppressed by Elastic Stresses
V. E. Antonov, V. P. Glazkov, D. P. Kozlenko, B. N. Savenko, V. A. Somenkov, and V. K. Fedotov
pp. 318-320 Full Text: PDF (49 kB)
Critical Current in a System of Two Superconductors Connected by a Short Small-Diameter Normal Metal Bridge
Yu. N. Ovchinnikov and A. I. Larkin
pp. 321-325 Full Text: PDF (60 kB)Archived web conten
Semiconductors V. 39, I. 09
No full textdc.description[en_US]Semiconductors -- September 2005
Volume 39, Issue 9, pp. 989-1109
ATOMIC STRUCTURE AND NONELECTRONIC PROPERTIES OF SEMICONDUCTORS
Formation of Nanostructures in a Ga2Se3/GaAs System
N. N. Bezryadin, G. I. Kotov, I. N. Arsent'ev, and A. A. Starodubtsev
pp. 989-992 Full Text: PDF (175 kB)
ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS
Microphotoluminescence of Undoped Single-Crystal Zinc Telluride Produced by Nonequilibrium Vapor-Phase Growth Techniques
V. V. Ushakov and Yu. V. Klevkov
pp. 993-997 Full Text: PDF (145 kB)
Exact Self-Compensation of Conduction in Cd0.95Zn0.05Te:Cl Crystals in a Wide Range of Cd Vapor Pressures
O. A. Matveev, A. I. Terent'ev, N. K. Zelenina, V. N. Gus'kov, V. E. Sedov, A. A. Tomasov, and V. P. Karpenko
pp. 998-1003 Full Text: PDF (76 kB)
Optical Properties of ZnGeP2 in the UV Spectral Region
Yu. M. Basalaev, A. B. Gordienko, and A. S. Poplavnoi
pp. 1004-1006 Full Text: PDF (48 kB)
Instability of Drift Waves in Two-Component Solid-State Plasma
A. A. Bulgakov and O. V. Shramkova
pp. 1007-1012 Full Text: PDF (103 kB)
Electron Traps in Thin Layers of Low-Temperature-Grown Gallium Arsenide with As���Sb Nanoclusters
P. N. Brunkov, A. A. Gutkin, V. V. Chaldyshev, N. N. Bert, S. G. Konnikov, V. V. Preobrazhenskii, M. A. Putyato, and B. R. Semyagin
pp. 1013-1016 Full Text: PDF (59 kB)
Study of the Properties of Hg1 ��� x ��� y ��� zCdxMnyZnzTe as a New Infrared Optoelectronic Material
I. N. Gorbatyuk, S. E. Ostapov, S. G. Dremlyuzhenko, R. A. Zaplitnyi, I. M. Fodchuk, V. V. Zhikharevich, V. G. Deibuk, N. A. Popenko, I. V. Ivanchenko, A. A. Zhigalov, and S. Yu. Karelin
pp. 1017-1022 Full Text: PDF (140 kB)
Transport Coefficients of n-Bi2Te2.7Se0.3 in a Two-Band Model of the Electron Spectrum
P. P. Konstantinov, L. V. Prokof'eva, M. I. Fedorov, D. A. Pshenai-Severin, Yu. I. Ravich, V. V. Kompaniets, and V. A. Chistyakov
pp. 1023-1027 Full Text: PDF (68 kB)
SEMICONDUCTOR STRUCTURES, INTERFACES, AND SURFACES
The Formation of Nanodimensional Structures on the Surface of p-CdTe Crystals Exposed to a Single Radiation Pulse from a Ruby Laser
A. Baidullaeva, A. I. Vlasenko, L. F. Cuzan, O. S. Litvin, and P. E. Mozol'
pp. 1028-1031 Full Text: PDF (365 kB)
Effect of a Submonolayer Metal Film on Band Bending in a Semiconductor Substrate
S. Yu. Davydov and A. V. Pavlyk
pp. 1032-1034 Full Text: PDF (33 kB)
Photoelectric Properties of Surface-Barrier Structures Based on Zn2 ��� 2xCuxInxSe2 Films Obtained by Selenization
V. Yu. Rud', Yu. V. Rud', V. F. Gremenok, E. P. Zaretskaya, and O. N. Sergeeva
pp. 1035-1039 Full Text: PDF (147 kB)
Simulation of Special Features of the Drift-Mobility Saturation in Submicrometer Silicon Structures
V. A. Gergel', Yu. V. Gulyaev, and M. N. Yakupov
pp. 1040-1044 Full Text: PDF (71 kB)
LOW-DIMENSIONAL SYSTEMS
Influence of an Increase in the Implantation Dose of Erbium Ions and Annealing Temperature on Photoluminescence in AlGaN/GaN Superlattices and GaN Epitaxial Layers
A. M. Emel'yanov, N. A. Sobolev, E. I. Shek, V. V. Lundin, A. S. Usikov, and E. O. Parshin
pp. 1045-1047 Full Text: PDF (47 kB)
A Spin Filter with a Quantum Point Contact in a Dilute Magnetic Semiconductor
S. A. Ignatenko and V. E. Borisenko
pp. 1048-1052 Full Text: PDF (67 kB)
The Stark Shift of the Hole States in Separate InAs/GaAs Quantum Dots Grown on (100) and (311)A GaAs Substrates
M. M. Sobolev, G. E. Cirlin, Yu. B. Samsonenko, N. K. Polyakov, and A. A. Tonkikh
pp. 1053-1057 Full Text: PDF (61 kB)
Electronic Structure of Titanium Disulfide Nanostructures: Monolayers, Nanostripes, and Nanotubes
V. V. Ivanovskaya, G. Seifert, and A. L. Ivanovskii
pp. 1058-1065 Full Text: PDF (656 kB)
Exciton States in Semiconductor Spherical Nanostructures
S. I. Pokutnyi
pp. 1066-1070 Full Text: PDF (64 kB)
High-Frequency Nonlinear Response of Double-Well Nanostructures
V. F. Elesin and I. Yu. Kateev
pp. 1071-1075 Full Text: PDF (74 kB)
Polarization of the Optical Emission of Polaron Excitons in Anisotropic Quantum Dots
A. Yu. Maslov and O. V. Proshina
pp. 1076-1081 Full Text: PDF (66 kB)
PHYSICS OF SEMICONDUCTOR DEVICES
A Millimeter���Submillimeter Phonon-Cooled Hot-Electron Bolometer Mixer Based on Two-Dimensional Electron Gas in an AlGaAs/GaAs Heterostructure
D. V. Morozov, K. V. Smirnov, A. V. Smirnov, V. A. Lyakhov, and G. N. Goltsman
pp. 1082-1086 Full Text: PDF (131 kB)
Semiconductor WGM Lasers for the Mid-IR Spectral Range
V. V. Sherstnev, A. M. Monakhov, A. P. Astakhova, A. Yu. Kislyakova, Yu. P. Yakovlev, N. S. Averkiev, A. Krier, and G. Hill
pp. 1087-1092 Full Text: PDF (139 kB)
Semiconductor���Insulator Structures in the Phototargets of Vidicons Sensitive in the Middle Infrared Region of the Spectrum
N. F. Kovtonyuk, V. P. Misnik, and A. V. Sokolov
pp. 1093-1095 Full Text: PDF (42 kB)
A Mechanism of Electroluminescence in Silicon Diodes with a High Dislocation Density
A. V. Sachenko and Yu. V. Kryuchenko
pp. 1096-1101 Full Text: PDF (76 kB)
A Combined Model of a Resonant-Tunneling Diode
I. I. Abramov, I. A. Goncharenko, and N. V. Kolomeitseva
pp. 1102-1109 Full Text: PDF (97 kB)dc.description.contributor[en_US]dc.description.contributor[en_US
Semiconductors V. 39, I. 09
No full textSemiconductors -- September 2005
Volume 39, Issue 9, pp. 989-1109
ATOMIC STRUCTURE AND NONELECTRONIC PROPERTIES OF SEMICONDUCTORS
Formation of Nanostructures in a Ga2Se3/GaAs System
N. N. Bezryadin, G. I. Kotov, I. N. Arsent'ev, and A. A. Starodubtsev
pp. 989-992 Full Text: PDF (175 kB)
ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS
Microphotoluminescence of Undoped Single-Crystal Zinc Telluride Produced by Nonequilibrium Vapor-Phase Growth Techniques
V. V. Ushakov and Yu. V. Klevkov
pp. 993-997 Full Text: PDF (145 kB)
Exact Self-Compensation of Conduction in Cd0.95Zn0.05Te:Cl Crystals in a Wide Range of Cd Vapor Pressures
O. A. Matveev, A. I. Terent'ev, N. K. Zelenina, V. N. Gus'kov, V. E. Sedov, A. A. Tomasov, and V. P. Karpenko
pp. 998-1003 Full Text: PDF (76 kB)
Optical Properties of ZnGeP2 in the UV Spectral Region
Yu. M. Basalaev, A. B. Gordienko, and A. S. Poplavnoi
pp. 1004-1006 Full Text: PDF (48 kB)
Instability of Drift Waves in Two-Component Solid-State Plasma
A. A. Bulgakov and O. V. Shramkova
pp. 1007-1012 Full Text: PDF (103 kB)
Electron Traps in Thin Layers of Low-Temperature-Grown Gallium Arsenide with As–Sb Nanoclusters
P. N. Brunkov, A. A. Gutkin, V. V. Chaldyshev, N. N. Bert, S. G. Konnikov, V. V. Preobrazhenskii, M. A. Putyato, and B. R. Semyagin
pp. 1013-1016 Full Text: PDF (59 kB)
Study of the Properties of Hg1 – x – y – zCdxMnyZnzTe as a New Infrared Optoelectronic Material
I. N. Gorbatyuk, S. E. Ostapov, S. G. Dremlyuzhenko, R. A. Zaplitnyi, I. M. Fodchuk, V. V. Zhikharevich, V. G. Deibuk, N. A. Popenko, I. V. Ivanchenko, A. A. Zhigalov, and S. Yu. Karelin
pp. 1017-1022 Full Text: PDF (140 kB)
Transport Coefficients of n-Bi2Te2.7Se0.3 in a Two-Band Model of the Electron Spectrum
P. P. Konstantinov, L. V. Prokof'eva, M. I. Fedorov, D. A. Pshenai-Severin, Yu. I. Ravich, V. V. Kompaniets, and V. A. Chistyakov
pp. 1023-1027 Full Text: PDF (68 kB)
SEMICONDUCTOR STRUCTURES, INTERFACES, AND SURFACES
The Formation of Nanodimensional Structures on the Surface of p-CdTe Crystals Exposed to a Single Radiation Pulse from a Ruby Laser
A. Baidullaeva, A. I. Vlasenko, L. F. Cuzan, O. S. Litvin, and P. E. Mozol'
pp. 1028-1031 Full Text: PDF (365 kB)
Effect of a Submonolayer Metal Film on Band Bending in a Semiconductor Substrate
S. Yu. Davydov and A. V. Pavlyk
pp. 1032-1034 Full Text: PDF (33 kB)
Photoelectric Properties of Surface-Barrier Structures Based on Zn2 – 2xCuxInxSe2 Films Obtained by Selenization
V. Yu. Rud', Yu. V. Rud', V. F. Gremenok, E. P. Zaretskaya, and O. N. Sergeeva
pp. 1035-1039 Full Text: PDF (147 kB)
Simulation of Special Features of the Drift-Mobility Saturation in Submicrometer Silicon Structures
V. A. Gergel', Yu. V. Gulyaev, and M. N. Yakupov
pp. 1040-1044 Full Text: PDF (71 kB)
LOW-DIMENSIONAL SYSTEMS
Influence of an Increase in the Implantation Dose of Erbium Ions and Annealing Temperature on Photoluminescence in AlGaN/GaN Superlattices and GaN Epitaxial Layers
A. M. Emel'yanov, N. A. Sobolev, E. I. Shek, V. V. Lundin, A. S. Usikov, and E. O. Parshin
pp. 1045-1047 Full Text: PDF (47 kB)
A Spin Filter with a Quantum Point Contact in a Dilute Magnetic Semiconductor
S. A. Ignatenko and V. E. Borisenko
pp. 1048-1052 Full Text: PDF (67 kB)
The Stark Shift of the Hole States in Separate InAs/GaAs Quantum Dots Grown on (100) and (311)A GaAs Substrates
M. M. Sobolev, G. E. Cirlin, Yu. B. Samsonenko, N. K. Polyakov, and A. A. Tonkikh
pp. 1053-1057 Full Text: PDF (61 kB)
Electronic Structure of Titanium Disulfide Nanostructures: Monolayers, Nanostripes, and Nanotubes
V. V. Ivanovskaya, G. Seifert, and A. L. Ivanovskii
pp. 1058-1065 Full Text: PDF (656 kB)
Exciton States in Semiconductor Spherical Nanostructures
S. I. Pokutnyi
pp. 1066-1070 Full Text: PDF (64 kB)
High-Frequency Nonlinear Response of Double-Well Nanostructures
V. F. Elesin and I. Yu. Kateev
pp. 1071-1075 Full Text: PDF (74 kB)
Polarization of the Optical Emission of Polaron Excitons in Anisotropic Quantum Dots
A. Yu. Maslov and O. V. Proshina
pp. 1076-1081 Full Text: PDF (66 kB)
PHYSICS OF SEMICONDUCTOR DEVICES
A Millimeter–Submillimeter Phonon-Cooled Hot-Electron Bolometer Mixer Based on Two-Dimensional Electron Gas in an AlGaAs/GaAs Heterostructure
D. V. Morozov, K. V. Smirnov, A. V. Smirnov, V. A. Lyakhov, and G. N. Goltsman
pp. 1082-1086 Full Text: PDF (131 kB)
Semiconductor WGM Lasers for the Mid-IR Spectral Range
V. V. Sherstnev, A. M. Monakhov, A. P. Astakhova, A. Yu. Kislyakova, Yu. P. Yakovlev, N. S. Averkiev, A. Krier, and G. Hill
pp. 1087-1092 Full Text: PDF (139 kB)
Semiconductor–Insulator Structures in the Phototargets of Vidicons Sensitive in the Middle Infrared Region of the Spectrum
N. F. Kovtonyuk, V. P. Misnik, and A. V. Sokolov
pp. 1093-1095 Full Text: PDF (42 kB)
A Mechanism of Electroluminescence in Silicon Diodes with a High Dislocation Density
A. V. Sachenko and Yu. V. Kryuchenko
pp. 1096-1101 Full Text: PDF (76 kB)
A Combined Model of a Resonant-Tunneling Diode
I. I. Abramov, I. A. Goncharenko, and N. V. Kolomeitseva
pp. 1102-1109 Full Text: PDF (97 kB)Archived web conten
Semiconductors V. 31, I. 07
No full textdc.description[en_US]Semiconductors -- July 1997
Volume 31, Issue 7, pp. 651-761
Effect of impurities with variable valency on the transport phenomena in a quantum well
I. I. Lyapilin
Full Text: PDF (111 kB)
Charge-carrier lifetime in Hg1 ��� xCdxTe (x = 0.22) structures grown by molecular-beam epitaxy
A. V. Voitsekhovskii, Yu. A. Denisov, A. P. Kokhanenko, V. S. Varavin, S. A. Dvoretskii, V. T. Liberman, N. N. Mikhailov, and Yu. G. Sidorov
Full Text: PDF (70 kB)
Frenkel'���Poole effect for boron impurity in silicon in strong warming electric fields
A. M. Kozlov and V. V. Ryl'kov
Full Text: PDF (75 kB)
Measurement of the diffusion length of minority charge carriers using real Schottky barriers
N. L. Dmitruk, O. Yu. Borkovskaya, and S. V. Mamykin
Full Text: PDF (100 kB)
Effect of successive implantation of Ag+(Cu+) and Xe+ ions on the recombination properties of CdxHg1 ��� xTe crystals
M. I. Ibragimova, N. S. Baryshev, V. Yu. Petukhov, and I. B. Khaibullin
Full Text: PDF (86 kB)
Characteristic features of Raman scattering of light in silicon doped with high krypton doses
M. F. Galyautdinov, N. V. Kurbatova, S. A. Moiseev, and E. I. Shtyrkov
Full Text: PDF (68 kB)
Simulation of heat and mass transfer during growth of silicon carbide single crystals
B. A. Kirillov, A. S. Bakin, Yu. M. Tairov, and S. N. Solnyshkin
Full Text: PDF (123 kB)
Polarization photosensitivity of silicon solar cells with an antireflection coating consisting of a mixture of indium and tin oxides
V. M. Botnaryuk, A. V. Koval', A. V. Simashkevich, D. A. Sherban, V. Yu. Rud', and Yu. V. Rud'
Full Text: PDF (115 kB)
Photosensitivity of thin-film ZnO/CdS/Cu(In, Ga)Se2 solar cells
T. Walter, V. Yu. Rud', Yu. V. Rud', and H. W. Schock
Full Text: PDF (96 kB)
High-temperature annealing and nuclear-transmutation doping of GaAs bombarded by reactor neutrons
V. N. Brudnyi, V. A. Novikov, V. V. Peshev, N. G. Kolin, and A. I. Noifekh
Full Text: PDF (106 kB)
Characteristic structural features of amorphous hydrated silicon films deposited by direct-currect decomposition of silane in a magnetic field
O. A. Golikova, A. N. Kuznetsov, V. Kh. Kudoyarova, and M. M. Kazanin
Full Text: PDF (77 kB)
Effect of laser irradiation on the photoconductivity and noise in n-Cdx Hg1 ��� xTe single crystals
A. I. Vlasenko, V. A. Gnatyuk, E. P. Kopishinskaya, and P. E. Mozol'
Full Text: PDF (61 kB)
Photoelasticity and quadratic permittivity of wide-gap semiconductors
S. Yu. Davydov and S. K. Tikhonov
Full Text: PDF (57 kB)
Role of spatial localization of a particle during tunneling
N. L. Chuprikov
Full Text: PDF (91 kB)
Variation of the optical properties of porous silicon as a result of thermal annealing in vacuum
V. A. Kiselev, S. V. Polisadin, and A. V. Postnikov
Full Text: PDF (61 kB)
Electron-hole scattering in p-type silicon with a low charge-carrier injection level
T. T. Mnatsakanov, L. I. Pomortseva, and V. B. Shuman
Full Text: PDF (68 kB)
Effect of tin impurity on the photoconductivity kinetics of thin amorphous layers of arsenic selenide
M. S. Iovu, E. P. Kolomeiko, and S. D. Shutov
Full Text: PDF (106 kB)
Study of submicron deposits in polycrystalline materials using the internal-friction method
Yu. N. Andreev, N. P. Yaroslavtsev, M. V. Bestaev, D. Ts. Dimitrov, V. A. Moshnikov, and Yu. M. Tairov
Full Text: PDF (41 kB)
Mechanism of electroluminescence of porous silicon in electrolytes
D. N. Goryachev, O. M. Sreseli, and L. V. Belyakov
Full Text: PDF (61 kB)
Excitonic effects in the photoconductivity of quantum-well GaxIn1 ��� x As/InP structures
M. F. Panov and A. N. Pikhtin
Full Text: PDF (59 kB)
Lateral association of vertically coupled quantum dots
A. F. Tsatsul'nikov, A. Yu. Egorov, A. E. Zhukov, A. R. Kovsh, V. M. Ustinov, N. N. Ledentsov, M. V. Maksimov, B. V. Volovik, A. A. Suvorova, N. A. Bert, and P. S. Kop'ev
Full Text: PDF (216 kB)
Characteristic features of silicon multijunction solar cells with vertical p���n junctions
E. G. Guk, T. A. Nalet, M. Z. Shvarts, and V. B. Shuman
Full Text: PDF (57 kB)
1/f noise in strongly doped n-type GaAs under band���band illumination conditions
N. V. D'yakonova, M. E. Levinshtein, S. L. Rumyantsev, and F. Pascal
Full Text: PDF (115 kB)
Longitudinal photoeffect in In0.53Ga0.47As p���n junctions
S. V. Slobodchikov, Kh. M. Salikhov, and E. V. Russu
Full Text: PDF (72 kB)
Deep centers and negative temperature coefficient of the breakdown voltage of SiC p���n structures
A. A. Lebedev, S. Ortoland, C. Raynaud, M. L. Locatelli, D. Planson, and J. P. Chante
Full Text: PDF (67 kB)
Photoluminescence of erbium in amorphous hydrogenated phosphorus-doped silicon
E. I. Terukov, A. N. Kuznetsov, E. O. Parshin, G. Weiser, and H. Kuehne
Full Text: PDF (49 kB)
Photovoltaic effect in an asymmetric GaAs/AlGaAs nanostructure produced as a result of laser excitation
I. V. Kucherenko, L. K. Vodop'yanov, and V. I. Kadushkin
Full Text: PDF (53 kB)
A study of the excitonic characteristics in heterostructures with quantum wells and corrugated surface
I. A. Avrutskii and V. G. Litovchenko
Full Text: PDF (111 kB)
Faraday rotation of light in a microcavity
M. A. Kaliteevskii, A. V. Kavokin, and P. S. Kop'ev
Full Text: PDF (109 kB)
Effect of radiation on the characteristics of MIS structures containing rare-earth oxides
Ya. G. Fedorenko, L. A. Otavina, E. V. Ledeneva, and A. M. Sverdlova
Full Text: PDF (92 kB)
Calculation of a hierarchical PbS���C superlattice in a multiwell model
E. Ya. Glushko and V. N. Evteev
Full Text: PDF (79 kB)
Viktor Il'ich Fistul' (On his seventieth birthday)
Full Text: PDF (27 kB)
Electronic Phenomena in Chalcogenide Glassy Semiconductors Collective monograph edited by K. D. Ts�ndin, Nauka, St. Petersburg, 1986, 486 pages
Full Text: PDF (20 kB)dc.description.contributor[en_US]dc.description.contributor[en_US
Semiconductors V. 31, I. 07
No full textSemiconductors -- July 1997
Volume 31, Issue 7, pp. 651-761
Effect of impurities with variable valency on the transport phenomena in a quantum well
I. I. Lyapilin
Full Text: PDF (111 kB)
Charge-carrier lifetime in Hg1 – xCdxTe (x = 0.22) structures grown by molecular-beam epitaxy
A. V. Voitsekhovskii, Yu. A. Denisov, A. P. Kokhanenko, V. S. Varavin, S. A. Dvoretskii, V. T. Liberman, N. N. Mikhailov, and Yu. G. Sidorov
Full Text: PDF (70 kB)
Frenkel'–Poole effect for boron impurity in silicon in strong warming electric fields
A. M. Kozlov and V. V. Ryl'kov
Full Text: PDF (75 kB)
Measurement of the diffusion length of minority charge carriers using real Schottky barriers
N. L. Dmitruk, O. Yu. Borkovskaya, and S. V. Mamykin
Full Text: PDF (100 kB)
Effect of successive implantation of Ag+(Cu+) and Xe+ ions on the recombination properties of CdxHg1 – xTe crystals
M. I. Ibragimova, N. S. Baryshev, V. Yu. Petukhov, and I. B. Khaibullin
Full Text: PDF (86 kB)
Characteristic features of Raman scattering of light in silicon doped with high krypton doses
M. F. Galyautdinov, N. V. Kurbatova, S. A. Moiseev, and E. I. Shtyrkov
Full Text: PDF (68 kB)
Simulation of heat and mass transfer during growth of silicon carbide single crystals
B. A. Kirillov, A. S. Bakin, Yu. M. Tairov, and S. N. Solnyshkin
Full Text: PDF (123 kB)
Polarization photosensitivity of silicon solar cells with an antireflection coating consisting of a mixture of indium and tin oxides
V. M. Botnaryuk, A. V. Koval', A. V. Simashkevich, D. A. Sherban, V. Yu. Rud', and Yu. V. Rud'
Full Text: PDF (115 kB)
Photosensitivity of thin-film ZnO/CdS/Cu(In, Ga)Se2 solar cells
T. Walter, V. Yu. Rud', Yu. V. Rud', and H. W. Schock
Full Text: PDF (96 kB)
High-temperature annealing and nuclear-transmutation doping of GaAs bombarded by reactor neutrons
V. N. Brudnyi, V. A. Novikov, V. V. Peshev, N. G. Kolin, and A. I. Noifekh
Full Text: PDF (106 kB)
Characteristic structural features of amorphous hydrated silicon films deposited by direct-currect decomposition of silane in a magnetic field
O. A. Golikova, A. N. Kuznetsov, V. Kh. Kudoyarova, and M. M. Kazanin
Full Text: PDF (77 kB)
Effect of laser irradiation on the photoconductivity and noise in n-Cdx Hg1 – xTe single crystals
A. I. Vlasenko, V. A. Gnatyuk, E. P. Kopishinskaya, and P. E. Mozol'
Full Text: PDF (61 kB)
Photoelasticity and quadratic permittivity of wide-gap semiconductors
S. Yu. Davydov and S. K. Tikhonov
Full Text: PDF (57 kB)
Role of spatial localization of a particle during tunneling
N. L. Chuprikov
Full Text: PDF (91 kB)
Variation of the optical properties of porous silicon as a result of thermal annealing in vacuum
V. A. Kiselev, S. V. Polisadin, and A. V. Postnikov
Full Text: PDF (61 kB)
Electron-hole scattering in p-type silicon with a low charge-carrier injection level
T. T. Mnatsakanov, L. I. Pomortseva, and V. B. Shuman
Full Text: PDF (68 kB)
Effect of tin impurity on the photoconductivity kinetics of thin amorphous layers of arsenic selenide
M. S. Iovu, E. P. Kolomeiko, and S. D. Shutov
Full Text: PDF (106 kB)
Study of submicron deposits in polycrystalline materials using the internal-friction method
Yu. N. Andreev, N. P. Yaroslavtsev, M. V. Bestaev, D. Ts. Dimitrov, V. A. Moshnikov, and Yu. M. Tairov
Full Text: PDF (41 kB)
Mechanism of electroluminescence of porous silicon in electrolytes
D. N. Goryachev, O. M. Sreseli, and L. V. Belyakov
Full Text: PDF (61 kB)
Excitonic effects in the photoconductivity of quantum-well GaxIn1 – x As/InP structures
M. F. Panov and A. N. Pikhtin
Full Text: PDF (59 kB)
Lateral association of vertically coupled quantum dots
A. F. Tsatsul'nikov, A. Yu. Egorov, A. E. Zhukov, A. R. Kovsh, V. M. Ustinov, N. N. Ledentsov, M. V. Maksimov, B. V. Volovik, A. A. Suvorova, N. A. Bert, and P. S. Kop'ev
Full Text: PDF (216 kB)
Characteristic features of silicon multijunction solar cells with vertical p–n junctions
E. G. Guk, T. A. Nalet, M. Z. Shvarts, and V. B. Shuman
Full Text: PDF (57 kB)
1/f noise in strongly doped n-type GaAs under band–band illumination conditions
N. V. D'yakonova, M. E. Levinshtein, S. L. Rumyantsev, and F. Pascal
Full Text: PDF (115 kB)
Longitudinal photoeffect in In0.53Ga0.47As p–n junctions
S. V. Slobodchikov, Kh. M. Salikhov, and E. V. Russu
Full Text: PDF (72 kB)
Deep centers and negative temperature coefficient of the breakdown voltage of SiC p–n structures
A. A. Lebedev, S. Ortoland, C. Raynaud, M. L. Locatelli, D. Planson, and J. P. Chante
Full Text: PDF (67 kB)
Photoluminescence of erbium in amorphous hydrogenated phosphorus-doped silicon
E. I. Terukov, A. N. Kuznetsov, E. O. Parshin, G. Weiser, and H. Kuehne
Full Text: PDF (49 kB)
Photovoltaic effect in an asymmetric GaAs/AlGaAs nanostructure produced as a result of laser excitation
I. V. Kucherenko, L. K. Vodop'yanov, and V. I. Kadushkin
Full Text: PDF (53 kB)
A study of the excitonic characteristics in heterostructures with quantum wells and corrugated surface
I. A. Avrutskii and V. G. Litovchenko
Full Text: PDF (111 kB)
Faraday rotation of light in a microcavity
M. A. Kaliteevskii, A. V. Kavokin, and P. S. Kop'ev
Full Text: PDF (109 kB)
Effect of radiation on the characteristics of MIS structures containing rare-earth oxides
Ya. G. Fedorenko, L. A. Otavina, E. V. Ledeneva, and A. M. Sverdlova
Full Text: PDF (92 kB)
Calculation of a hierarchical PbS–C superlattice in a multiwell model
E. Ya. Glushko and V. N. Evteev
Full Text: PDF (79 kB)
Viktor Il'ich Fistul' (On his seventieth birthday)
Full Text: PDF (27 kB)
Electronic Phenomena in Chalcogenide Glassy Semiconductors Collective monograph edited by K. D. Tséndin, Nauka, St. Petersburg, 1986, 486 pages
Full Text: PDF (20 kB)Archived web conten
Technical Physics V. 47, I. 12
No full textTechnical Physics -- December 2002
Volume 47, Issue 12, pp. 1487-1586
THEORETICAL AND MATHEMATICAL PHYSICS
Method of Integral Equation in the Theory of Weak-Guiding Inhomogeneous Optical Waveguides
L. I. Sotskaya and A. B. Sotskii
pp. 1487-1494 Full Text: PDF (100 kB)
ATOMS, SPECTRA, RADIATION
Pressure-Shock-Controlled Pulsed Molecular Beams
G. N. Makarov
pp. 1495-1500 Full Text: PDF (70 kB)
GASES AND LIQUIDS
The Shape of a Drop in a Constant Electric Field
A. A. Shutov
pp. 1501-1508 Full Text: PDF (132 kB)
GAS DISCHARGES, PLASMA
Study of the Reverse Current Range in a Knudsen Diode with Surface Ionization under Overneutralized Conditions in the Presence of Electron Emission from the Collector: Part I. Large Electrode Spacing
V. I. Babanin, V. I. Sitnov, A. V. Solov'ev, and A. Ya. Énder
pp. 1509-1517 Full Text: PDF (106 kB)
Study of the Reverse Current Range in a Knudsen Diode with Surface Ionization under Overneutralized Conditions in the Presence of Electron Emission from the Collector: Part II. Small Electrode Spacing
V. I. Babanin, V. I. Sitnov, A. V. Solov'ev, and A. Ya. Énder
pp. 1518-1523 Full Text: PDF (77 kB)
Parameters of Electronic Detonation in Solid Dielectrics
Yu. N. Vershinin
pp. 1524-1528 Full Text: PDF (69 kB)
SOLIDS
Fractal Cluster Model of Spalling
G. G. Savenkov
pp. 1529-1532 Full Text: PDF (56 kB)
Mechanical, Structural, and Spectroscopic Properties of C70 Fullerite Phases Produced under High Pressure and Shear
V. D. Blank, K. V. Gogolinsky, V. N. Denisov, V. A. Ivdenko, B. N. Mavrin, N. R. Serebryanaya, and S. N. Sulyanov
pp. 1533-1537 Full Text: PDF (105 kB)
Fracture of Spheroplastic under Static and Dynamic Stressing
S. A. Atroshenko, S. I. Krivosheev, Yu. V. Petrov, A. A. Utkin, and G. D. Fedorovskiy
pp. 1538-1542 Full Text: PDF (279 kB)
On the Mechanism of Fibril Rotation at the Early Stages of Amorphous–Crystalline Polymer Reorientation
B. M. Ginzburg, N. Sultonov, and A. A. Shepelevskii
pp. 1543-1546 Full Text: PDF (87 kB)
OPTICS, QUANTUM ELECTRONICS
Optical-to-Acoustic Energy Conversion Efficiency upon Interaction of Pulsed Laser Radiation with a Liquid: II. Conversion Efficiency Measurement by Holographic Interferometry upon Acoustooptic Interaction
G. V. Ostrovskaya
pp. 1547-1553 Full Text: PDF (309 kB)
RADIOPHYSICS
Transformation of Plane Wave Fields Due to a Parameter Jump in a Free Magnetodielectric Layer
O. N. Rybin, N. I. Slipchenko, and L. N. Shul'ga
pp. 1554-1560 Full Text: PDF (84 kB)
Open Resonators for Low Dielectric Loss Measurements
S. N. Vlasov, E. V. Koposova, S. E. Myasnikova, and V. V. Parshin
pp. 1561-1569 Full Text: PDF (118 kB)
SURFACES, ELECTRON AND ION EMISSION
New Approach to Surface Ionization and Drift-Tube Spectroscopy of Organic Molecules
O. A. Bannykh, K. B. Povarova, and V. I. Kapustin
pp. 1570-1575 Full Text: PDF (84 kB)
EXPERIMENTAL INSTRUMENTS AND TECHNIQUES
Visualization of the Langmuir–Blodgett Film Structure in Liquid-Crystal Cells
B. N. Klimov and E. G. Glukhovskoy
pp. 1576-1579 Full Text: PDF (442 kB)
BRIEF COMMUNICATIONS
Generation of High-Power Electron Beams in Magnetron Guns with Cold Secondary-Emission Cathodes
A. N. Dovbnya, V. V. Zakutin, N. G. Reshetnyak, V. P. Romas'ko, Yu. Ya. Volkolupov, and M. A. Krasnogolovets
pp. 1580-1583 Full Text: PDF (52 kB)
Long-Lived Plasmoids Produced in Humid Air as Analogues of Ball Lightning
A. I. Egorov and S. I. Stepanov
pp. 1584-1586 Full Text: PDF (206 kB)Archived web conten
Semiconductors V. 32, I. 09
No full textSemiconductors -- September 1998
Volume 32, Issue 9, pp. 917-1028
Correlation between the temperature dependence of the band gap and the temperature dependence of the enthalpy of semiconductor crystals
A. F. Revinskii
Full Text: PDF (115 kB)
Formation of donor centers upon annealing of dysprosium- and holmium-implanted silicon
O. V. Aleksandrov, A. O. Zakhar'in, N. A. Sobolev, E. I. Shek, M. I. Makoviichuk, and E. O. Parshin
Full Text: PDF (63 kB)
Normal lattice vibrations and the crystal structure of anisotropic modifications of boron nitride
S. V. Ordin, B. N. Sharupin, and M. I. Fedorov
Full Text: PDF (177 kB)
Physical properties of CuxAg1 – xIn5S8 single crystals and related surface-barrier structures
I. V. Bodnar', E. A. Kudritskaya, I. K. Polushina, V. Yu. Rud', and Yu. V. Rud'
Full Text: PDF (89 kB)
Optical reflection in Pb0.78Sn0.22Te doped to 3 at. % with indium
A. N. Veis and S. A. Nemov
Full Text: PDF (50 kB)
Electrical properties of silicon, heat-treated at 530 °C with subsequent electron bombardment
V. B. Neimash, V. M. Siratskii, A. N. Kraichinskii, and E. A. Puzenko
Full Text: PDF (87 kB)
The effect of antisite defects on the band structure and dielectric function of In1 – xGaxSb solid solutions
V. G. Deibuk and V. I. Studenets
Full Text: PDF (96 kB)
Pressure dependence of the dielectric and optical properties of wide-gap semiconductors
S. Yu. Davydov and S. K. Tikhonov
Full Text: PDF (68 kB)
Optical properties of silicon-doped (100) GaAs layers grown by molecular-beam epitaxy
V. G. Mokerov, Yu. V. Fedorov, A. V. Guk, G. B. Galiev, V. A. Strakhov, and N. G. Yaremenko
Full Text: PDF (73 kB)
Mobility of charge carriers in double-layer PbTe/PbS structures
O. A. Aleksandrova, R. Ts. Bondokov, I. V. Saunin, and Yu. M. Tairov
Full Text: PDF (108 kB)
Many-body effects and electron tunneling in metal-insulator-p-type semiconductor structures
G. M. Min'kov, A. V. Germanenko, and O. É. Rut
Full Text: PDF (82 kB)
Current transport in porous p-Si and Pd-porous Si structures
S. V. Slobodchikov, Kh. M. Salikhov, and E. V. Russu
Full Text: PDF (77 kB)
Determining surface recombination rates in epitaxial layers of n-CdxHg1 – xTe from measurements of the planar magnetoresistance and relaxation times for nonequilibrium charge carriers
P. A. Borodovskii, A. F. Buldygin, and V. S. Varavin
Full Text: PDF (83 kB)
Physical model and results of numerical simulation of the degradation of a Si/SiO2 structure as a result of annealing in vacuum
G. V. Gadiyak and J. H. Stathis
Full Text: PDF (85 kB)
The effect of a nonmonotonic potential profile on edge magnetic states
E. B. Gorokhov, D. A. Romanov, S. A. Studenikin, V. A. Tkachenko, and O. A. Tkachenko
Full Text: PDF (258 kB)
Formation and passivation of defects in heterostructures with strained GaAs/InGaAs quantum wells as a result of treatment in a hydrogen plasma
I. A. Karpovich, A. V. Anshon, and D. O. Filatov
Full Text: PDF (86 kB)
Localized states near the band gap of GaAs caused by tetrahedral arsenic clusters
S. N. Grinyaev and V. A. Chaldyshev
Full Text: PDF (158 kB)
Weak-field magnetoresistance of two-dimensional electrons in In0.53Ga0.47As/InP heterostructures in the persistent photoconductivity regime
D. D. Bykanov, A. M. Kreshchuk, S. V. Novikov, T. A. Polyanskaya, and I. G. Savel'ev
Full Text: PDF (142 kB)
Energy spectrum of a nonideal quantum well in an electric field
O. L. Lazarenkova and A. N. Pikhtin
Full Text: PDF (169 kB)
Effect of the quantum-dot surface density in the active region on injection-laser characteristics
A. R. Kovsh, A. E. Zhukov, A. Yu. Egorov, V. M. Ustinov, Yu. M. Shernyakov, M. V. Maksimov, A. F. Tsatsul'nikov, B. V. Volovik, A. V. Lunev, N. N. Ledentsov, P. S. Kop'ev, Zh. I. Alferov, and D. Bimberg
Full Text: PDF (76 kB)
Powerful far-infrared radiation of hot holes in a strained two-dimensional InGaAs/AlGaAs structure
Yu. L. Ivánov, S. A. Morozov, V. M. Ustinov, and A. E. Zhukov
Full Text: PDF (42 kB)
Composition and porosity of multicomponent structures: porous silicon as a three-component system
L. V. Belyakov, T. L. Makarova, V. I. Sakharov, I. T. Serenkov, and O. M. Sreseli
Full Text: PDF (68 kB)
Charge limit effects in emission from GaAs photocathodes at high optical excitation intensities
B. I. Reznikov and A. V. Subashiev
Full Text: PDF (195 kB)
Use of two low-temperature emitters to determine the cutoff wavelength of the photosensitivity of infrared photodetectors
V. V. Vasil'ev and Yu. P. Mashukov
Full Text: PDF (77 kB)
Spectral and mode characteristics of InAsSbP/InAsSb/InAsSbP lasers in the spectral region near 3.3 µm
A. A. Popov, V. V. Sherstnev, and Yu. P. Yakovlev
Full Text: PDF (218 kB)
Photocurrent amplification in Au/SiO2/n-6H-SiC MOS structures with a tunnel-thin insulator
I. V. Grekhov, M. I. Veksler, P. A. Ivanov, T. P. Samsonova, and A. F. Shulekin
Full Text: PDF (52 kB)
Vladimir Idelevich Perel' (On His 70th Birthday)
Full Text: PDF (87 kB)Archived web conten
Semiconductors V. 33, I. 04
No full textSemiconductors -- April 1999
Volume 33, Issue 4, pp. 377-481
ATOMIC STRUCTURE AND NON-ELECTRONIC PROPERTIES OF SEMICONDUCTORS
Low-temperature relaxation of a solid solution of iron in gallium phosphide
E. S. Demidov, V. V. Karzanov, A. B. Gromoglasova, and O. N. Morozkin
Full Text: PDF (74 kB)
Modeling Si nanoprecipitate formation in SiO2 layers with excess Si atoms
A. F. Leier, L. N. Safronov, and G. A. Kachurin
Full Text: PDF (126 kB)
ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS
Optical spectra and electronic structure of indium nitride
V. V. Sobolev and M. A. Zlobina
Full Text: PDF (104 kB)
Electrostatic model of the energy gap between Hubbard bands for boron atoms in silicon
N. A. Poklonskii and A. I. Syaglo
Full Text: PDF (99 kB)
The influence of defect clusters on redistribution of doping impurities in n- and p-type Si0.7Ge0.3 irradiated by reactor neutrons
A. P. Dolgolenko
Full Text: PDF (86 kB)
Acoustostimulated activation of bound defects in CdHgTe alloys
A. I. Vlasenko, Ya. M. Olikh, and R. K. Savkina
Full Text: PDF (100 kB)
A model of how the thermal ionization energy of impurities in semiconductors depends on their concentration and compensation
N. A. Poklonskii, A. I. Syaglo, and G. Biskupski
Full Text: PDF (140 kB)
Low-temperature photoluminescence in holmium-doped silicon
B. A. Andreev, N. A. Sobolev, Yu. A. Nikolaev, D. I. Kuritsin, M. I. Makovijchuk, and E. O. Parshin
Full Text: PDF (61 kB)
SEMICONDUCTORS STRUCTURES,INTERFACES,AND SURFACES
Generation-recombination instabilities in thin-film structures
V. V. Kolobaev
Full Text: PDF (52 kB)
Oscillations in the induced photopleochroism of In(Au)/Si thin-film structures
V. M. Botnaryuk, Yu. V. Zhilyaev, Yu. V. Rud', and V. Yu. Rud'
Full Text: PDF (99 kB)
Surface of n-type InP (100) passivated in sulfide solutions
V. N. Bessolov, M. V. Lebedev, and D. R. T. Zahn
Full Text: PDF (108 kB)
Electrical and photoelectric characteristics of an isotypic n-ZnO–n-Si structure
S. V. Slobodchikov, Kh. M. Salikhov, and E. V. Russu
Full Text: PDF (77 kB)
LOW-DIMENSIONAL SYSTEMS
Analysis of mechanisms for electron scattering in GaAs/AlxGa1 – xAs superlattices with doped quantum wells for longitudinal resonant current flow in high electric fields and at low temperatures
S. I. Borisenko and G. F. Karavaev
Full Text: PDF (149 kB)
Luminescence and electrical properties of InGaN/AlGaN/GaN light emitting diodes with multiple quantum wells
V. E. Kudryashov, A. N. Turkin, A. É. Yunovich, A. N. Kovalev, and F. I. Manyakhin
Full Text: PDF (138 kB)
Photoionization of deep impurity centers in quantum well structures
V. I. Belyavskii and Yu. A. Pomerantsev
Full Text: PDF (123 kB)
Photovoltaic effect in the impurity absorption region of Si-structures with blocked impurity conductivity
B. A. Aronzon, V. V. Rylkov, L. Asadauskas, R. Brazis, D. Yu. Kovalev, and J. Leotin
Full Text: PDF (163 kB)
AMORPHOUS,GLASSY,AND POROUS SEMICONDUCTORS
Defects in a-Si:H films induced by Si ion implantation
O. A. Golikova
Full Text: PDF (92 kB)
Absorption and the optical gap of a-C:H films produced from acetylene plasmas
E. A. Konshina
Full Text: PDF (105 kB)
Conductivity relaxation in coated porous silicon after annealing
S. P. Zimin and A. N. Bragin
Full Text: PDF (68 kB)
PHYSICS OF SEMICONDUCTOR DEVICES
Photomemory in CdTe thin-film solar cells
É. N. Voronkov, A. E. Sharonov, and V. V. Kolobaev
Full Text: PDF (64 kB)
Polarization photosensitivity of ZnO/CdS/Cu(In,Ga)Se2 solar cells
V. Yu. Rud', Yu. V. Rud', and H. W. Schock
Full Text: PDF (92 kB)
Exciton waveguide and lasing in structures with superfine GaAs quantum wells and InAs submonolayer inclusions in an AlGaAs host
A. F. Tsatsul'nikov, B. V. Volovik, N. N. Ledentsov, M. V. Maksimov, A. Yu. Egorov, A. R. Kovsh, V. M. Ustinov, A. E. Zhukov, P. S. Kop'ev, Zh. I. Alfërov, I. É. Kozin, M. V. Belousov, and D. Bimberg
Full Text: PDF (76 kB)
Influence of deep traps on current transport in Pd–p(n)–CdTe structures
S. V. Slobodchikov, Kh. M. Salikhov, and E. V. Russu
Full Text: PDF (57 kB)
Determination of the parameters of deep levels from the relaxational delay of breakdown of a p–n junction
S. V. Bulyarskii, Yu. N. Serëzhkin, and V. K. Ionychev
Full Text: PDF (86 kB)
Effect of laser radiation on GaP epitaxial diode structures
V. V. Inyakov, E. N. Moos, and Yu. A. Shrainer
Full Text: PDF (50 kB)
PERSONALIA
Vitali[i-breve] Ivanovich Stafeev (on his 70th birthday)
Full Text: PDF (176 kB)
Aleksandr Aleksandrovich Lebedev (on his 70th birthday)
Full Text: PDF (124 kB)Archived web conten
Semiconductors V. 33, I. 04
No full textdc.description[en_US]Semiconductors -- April 1999
Volume 33, Issue 4, pp. 377-481
ATOMIC STRUCTURE AND NON-ELECTRONIC PROPERTIES OF SEMICONDUCTORS
Low-temperature relaxation of a solid solution of iron in gallium phosphide
E. S. Demidov, V. V. Karzanov, A. B. Gromoglasova, and O. N. Morozkin
Full Text: PDF (74 kB)
Modeling Si nanoprecipitate formation in SiO2 layers with excess Si atoms
A. F. Leier, L. N. Safronov, and G. A. Kachurin
Full Text: PDF (126 kB)
ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS
Optical spectra and electronic structure of indium nitride
V. V. Sobolev and M. A. Zlobina
Full Text: PDF (104 kB)
Electrostatic model of the energy gap between Hubbard bands for boron atoms in silicon
N. A. Poklonskii and A. I. Syaglo
Full Text: PDF (99 kB)
The influence of defect clusters on redistribution of doping impurities in n- and p-type Si0.7Ge0.3 irradiated by reactor neutrons
A. P. Dolgolenko
Full Text: PDF (86 kB)
Acoustostimulated activation of bound defects in CdHgTe alloys
A. I. Vlasenko, Ya. M. Olikh, and R. K. Savkina
Full Text: PDF (100 kB)
A model of how the thermal ionization energy of impurities in semiconductors depends on their concentration and compensation
N. A. Poklonskii, A. I. Syaglo, and G. Biskupski
Full Text: PDF (140 kB)
Low-temperature photoluminescence in holmium-doped silicon
B. A. Andreev, N. A. Sobolev, Yu. A. Nikolaev, D. I. Kuritsin, M. I. Makovijchuk, and E. O. Parshin
Full Text: PDF (61 kB)
SEMICONDUCTORS STRUCTURES,INTERFACES,AND SURFACES
Generation-recombination instabilities in thin-film structures
V. V. Kolobaev
Full Text: PDF (52 kB)
Oscillations in the induced photopleochroism of In(Au)/Si thin-film structures
V. M. Botnaryuk, Yu. V. Zhilyaev, Yu. V. Rud', and V. Yu. Rud'
Full Text: PDF (99 kB)
Surface of n-type InP (100) passivated in sulfide solutions
V. N. Bessolov, M. V. Lebedev, and D. R. T. Zahn
Full Text: PDF (108 kB)
Electrical and photoelectric characteristics of an isotypic n-ZnO���n-Si structure
S. V. Slobodchikov, Kh. M. Salikhov, and E. V. Russu
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LOW-DIMENSIONAL SYSTEMS
Analysis of mechanisms for electron scattering in GaAs/AlxGa1 ��� xAs superlattices with doped quantum wells for longitudinal resonant current flow in high electric fields and at low temperatures
S. I. Borisenko and G. F. Karavaev
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Luminescence and electrical properties of InGaN/AlGaN/GaN light emitting diodes with multiple quantum wells
V. E. Kudryashov, A. N. Turkin, A. �. Yunovich, A. N. Kovalev, and F. I. Manyakhin
Full Text: PDF (138 kB)
Photoionization of deep impurity centers in quantum well structures
V. I. Belyavskii and Yu. A. Pomerantsev
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Photovoltaic effect in the impurity absorption region of Si-structures with blocked impurity conductivity
B. A. Aronzon, V. V. Rylkov, L. Asadauskas, R. Brazis, D. Yu. Kovalev, and J. Leotin
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AMORPHOUS,GLASSY,AND POROUS SEMICONDUCTORS
Defects in a-Si:H films induced by Si ion implantation
O. A. Golikova
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Absorption and the optical gap of a-C:H films produced from acetylene plasmas
E. A. Konshina
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Conductivity relaxation in coated porous silicon after annealing
S. P. Zimin and A. N. Bragin
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PHYSICS OF SEMICONDUCTOR DEVICES
Photomemory in CdTe thin-film solar cells
�. N. Voronkov, A. E. Sharonov, and V. V. Kolobaev
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Polarization photosensitivity of ZnO/CdS/Cu(In,Ga)Se2 solar cells
V. Yu. Rud', Yu. V. Rud', and H. W. Schock
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Exciton waveguide and lasing in structures with superfine GaAs quantum wells and InAs submonolayer inclusions in an AlGaAs host
A. F. Tsatsul'nikov, B. V. Volovik, N. N. Ledentsov, M. V. Maksimov, A. Yu. Egorov, A. R. Kovsh, V. M. Ustinov, A. E. Zhukov, P. S. Kop'ev, Zh. I. Alf�rov, I. �. Kozin, M. V. Belousov, and D. Bimberg
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Influence of deep traps on current transport in Pd���p(n)���CdTe structures
S. V. Slobodchikov, Kh. M. Salikhov, and E. V. Russu
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Determination of the parameters of deep levels from the relaxational delay of breakdown of a p���n junction
S. V. Bulyarskii, Yu. N. Ser�zhkin, and V. K. Ionychev
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Effect of laser radiation on GaP epitaxial diode structures
V. V. Inyakov, E. N. Moos, and Yu. A. Shrainer
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PERSONALIA
Vitali[i-breve] Ivanovich Stafeev (on his 70th birthday)
Full Text: PDF (176 kB)
Aleksandr Aleksandrovich Lebedev (on his 70th birthday)
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