1,631 research outputs found
On the history of relations between the “Serapion” K.A. Fedin and the "OPOJAZnik" B. M. Eichenbaum (from correspondence) (Introductory article and comments by I. E. Kabanova, preparation of the text by I. E. Kabanova and D. V. Neustroev)
No full textGeneralized Models of Sequential Decision-Making under Uncertainty
No full textSequential decision-making under uncertainty is an important branch of artificial intelligence research with a plethora of real-life applications. In this thesis, we generalize two fundamental properties of the decision-making process. First, we show that the theory on planning methods for finite spaces can be extended to infinite but countable spaces. Second, we propose a unified model of reinforcement learning algorithms that employ the principle of optimism in the face of uncertainty. This model is used to explain why these methods are efficient. We use the developed theory to design novel algorithms. Depending on the user's needs, these algorithms can either automate the decision-making process completely, or provide advice in decision-support systems.We start with presenting the basic concepts from the theory of decision-making and discuss the two approaches to it: planning and reinforcement learning. We look at a few typical sequential decision-making problems of increasing difficulty. In particular, we present a game that involves grid navigation and the problems of warehouse management and wind farm operation. Next, we survey the state-of-the-art methods for solving such problems.Based on this analysis, we identify the following research opportunities. In planning, models with non-stationary and countably-infinite data remain relatively untreated because they are equivalent to infinitely-dimensional optimization problems, which are notoriously difficult to solve even approximately. In reinforcement learning, optimistic approaches lead to computational efficiency, yet the theory of optimism remains undeveloped. Moreover, while reinforcement learning shines at playing games, such as chess, shōgi, Go, and StarCraft II, its practical applications remain few.Next, we overview a mathematical framework of sequential decision-making under uncertainty known as the Markov decision process. We explain how the goal of the decision-maker can be expressed as an optimization problem and present two approaches to achieving this goal. The first—more common—approach assigns so-called values to different actions. The other approach uses so-called occupancies that tell how often the agent should choose the actions instead of evaluating how good these actions are. In fact, the two approaches are known to be dual to each other. While this duality is well studied in the finite case, the infinite case is less explored. To address this knowledge gap, we present a new dual formulation for countable problems, both finite and infinite.Afterwards, we use the dual formulation to design a new planning algorithm for infinite-horizon problems with non-stationary data. These problems are essentially infinite-dimensional optimization problems and as such are impossible to solve exactly using the standard approaches. We show that they can be solved by changing what is defined as optimal behavior: instead of seeking universally optimal policies, we consider initial-decision-optimal ones. Instead of planning all of the actions beforehand, these policies can be used to plan given the currently observed data. When the next decision is required, the process can be repeated in the same manner, leading to an optimal decision-making strategy. Our approach uses the occupancy-value duality to rule out suboptimal actions based on so-called truncations: finite-time approximations of the infinite-horizon decision-making problem.We extend the truncation approach to a more general setting of decision-making problems with countably-infinite state spaces. Instead of time-based truncations, we consider state-based ones. This allows us to limit the amount of data required to make the decisions and to design an algorithm for a class of problems that are otherwise unsolvable to optimality. This approach belongs to a family of methods called policy iteration: starting from an initial policy, it constructs a series of improvements in the decisions while ruling out choices that are provably suboptimal.After that, we turn to reinforcement learning. For a long time, the only provably efficient reinforcement-learning methods were model-based ones; recently, a family of model-free optimistic methods emerged, each of them accompanied by an analysis of how sample-efficient the method is. We, too, study optimistic reinforcement learning, but in contrast to the existing research, we seek to understand not how efficient it is, but why it is efficient. Our analysis results in a formula that explains the three factors that cause regret—the efficiency loss—in optimistic reinforcement learning: the problem size, the measure of exploration, and the estimation error caused by the mismatch between the realized transitions and their true distribution. It can be applied to all of the existing algorithms as well as new ones. We design one such new algorithm and show how our theoretical framework can facilitate the proof of its efficiency.Finally, we consider a high-impact real-world sequential decision-making problem known as active wake control. Wind turbines can negatively impact each other with their wakes. These wake-induced losses can be reduced by changing the turbine orientations. Unfortunately, the optimal control strategy is non-trivial. To address this, existing approaches use simplified wake models in combination with numerical optimization methods; instead we propose to use model-free reinforcement learning. As a first step towards this goal, we present a wind farm simulator that is suitable for reinforcement learning and better reflects the realities of wind farm operation than other existing tools. Using this simulator, we show that previous research used a suboptimal action representation in this problem; we identify two alternatives, both of which improve the learning efficiency. Additionally, we demonstrate that reinforcement learning is robust to errors in the observations, providing further evidence that it is a fitting approach to active wake control.Our contributions advance the state of the art in the theory of sequential decision-making under uncertainty and its applications. These advances hint at unexplored connections between countably-infinite planning and optimistic learning, which may lead to even more efficient algorithms for sequential decision-making under uncertainty in the future.Algorithmic
Semiconductors V. 33, I. 10
No full textSemiconductors -- October 1999
Volume 33, Issue 10, pp. 1049-1155
ATOMIC STRUCTURE AND NON-ELECTRONIC PROPERTIES OF SEMICONDUCTORS
Pressure-induced formation of thermal donor centers in silicon after oxygen ion bombardment
I. V. Antonova, V. P. Popov, D. V. Kilanov, E. P. Neustroev, and A. Misuk
Full Text: PDF (55 kB)
Distinctive features of molecular-beam epitaxial growth of silicon on Si (100) surfaces in the presence of arsenic
G. É. Tsirlin, V. N. Petrov, N. K. Polyakov, S. A. Masalov, A. O. Golubok, D. V. Denisov, Yu. A. Kudryavtsev, B. Ya. Ber, and V. M. Ustinov
Full Text: PDF (553 kB)
ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS
Detection of paramagnetic recombination centers in proton-irradiated silicon
L. S. Vlasenko, M. P. Vlasenko, V. A. Kozlov, and V. V. Kozlovskii
Full Text: PDF (47 kB)
Luminescence properties of InAs layers and p–n structures grown by metallorganic chemical vapor deposition
T. I. Voronina, N. V. Zotova, S. S. Kizhayev, S. S. Molchanov, and Yu. P. Yakovlev
Full Text: PDF (68 kB)
Optical properties of gallium nitride bulk crystals grown by chloride vapor phase epitaxy
A. S. Zubrilov, Yu. V. Melnik, A. E. Nikolaev, M. A. Jacobson, D. K. Nelson, and V. A. Dmitriev
Full Text: PDF (70 kB)
The energy spectrum of lead selenide implanted with oxygen
A. N. Veis and N. A. Suvorova
Full Text: PDF (63 kB)
Autosolitons in an electron–hole plasma/excitons system in silicon at 4.2 K
A. M. Musaev
Full Text: PDF (57 kB)
Influence of indium doping on the formation of silicon–(gallium vacancy) complexes in gallium arsenide grown by molecular-beam epitaxy at low temperatures
A. E. Kunitsyn, V. V. Chaldyshev, S. P. Vul', V. V. Preobrazhenskii, M. A. Putyato, and B. R. Semyagin
Full Text: PDF (55 kB)
Oxygen and Erbium related donor centers in Czochralski grown silicon implanted with erbium
V. V. Emtsev, V. V. Emtsev, Jr., D. S. Poloskin, E. I. Shek, N. A. Sobolev, J. Michel, and L. C. Kimerling
Full Text: PDF (66 kB)
SEMICONDUCTORS STRUCTURES,INTERFACES,AND SURFACES
Electronic properties of a GaAs surface treated with hydrochloric acid
E. F. Venger, S. I. Kirillova, and V. E. Primachenko
Full Text: PDF (70 kB)
Photoconversion in heterocontacts of CdTe and its analogs with protein
Yu. V. Rud', V. Yu. Rud', I. V. Bodnar', V. V. Shatalova, and G. A. Il'chuk
Full Text: PDF (57 kB)
Fabrication and photosensitivity of AgInSe2/III–VI isotypic heterojunctions
V. Yu. Rud', V. F. Gremenok, Yu. V. Rud', R. N. Bekimbetov, and I. V. Bodnar'
Full Text: PDF (44 kB)
Influence of atomic-hydrogen treatment on the surface properties of n–n+ GaAs structures
N. A. Torkhov and S. V. Eremeev
Full Text: PDF (1173 kB)
Production and properties of In/HgGa2S4 Schottky barriers
V. Yu. Rud', Yu. V. Rud', M. C. Ohmer, and P. G. Schunemann
Full Text: PDF (47 kB)
Effect of hydrogen on the current–voltage characteristics of Pd/p-InGaAsP and Pd/n-InGaAs barrier structures
V. P. Voronkov and L. S. Khludkova
Full Text: PDF (52 kB)
LOW-DIMENSIONAL SYSTEMS
Determination of the electron mobility and density in thin semiconductor films at microwave frequencies using the magnetoplasma resonance
P. A. Borodovskii and A. F. Buldygin
Full Text: PDF (65 kB)
Modeling of the electron distribution in AlGaAs/GaAs (delta-Si) structures grown on vicinal surfaces
V. M. Osadchii
Full Text: PDF (43 kB)
Effect of the configuration of a quantum wire on the electron–phonon interaction
O. V. Kibis
Full Text: PDF (46 kB)
Inelastic scattering of hot electrons by neutral donors in heavily silicon-doped GaAs/AlAs quantum wells
I. A. Akimov, V. F. Sapega, D. N. Mirlin, B. P. Zakharchenya, V. M. Ustinov, A. E. Zhukov, A. Yu. Egorov, and A. A. Sirenko
Full Text: PDF (58 kB)
Momentum relaxation time and temperature dependence of electron mobility in semiconductor superlattices consisting of weakly interacting quantum wells
S. I. Borisenko
Full Text: PDF (82 kB)
Determination of the density of states in quantum wells and quantum dot arrays by the capacitance-voltage method
V. Ya. Aleshkin, N. A. Bekin, M. N. Buyanova, A. V. Murel', and B. N. Zvonkov
Full Text: PDF (83 kB)
AMORPHOUS,GLASSY,AND POROUS SEMICONDUCTORS
Role of impurities in the formation of silicyne (long-chain silicon): theory and experiment
A. I. Mashin, A. F. Khokhlov, S. K. Ignatov, A. A. Shchepalov, and A. G. Razuvaev
Full Text: PDF (70 kB)
Formation of optically active centers in films of erbium-doped amorphous hydrated silicon
M. M. Mezdrogina, M. P. Annaorazova, E. I. Terukov, I. N. Trapeznikova, and N. Nazarov
Full Text: PDF (51 kB)
Variation of the parameters and composition of thin films of porous silicon as a result of oxidation: ellipsometric studies
E. V. Astrova, V. B. Voronkov, A. D. Remenyuk, V. B. Shuman, and V. A. Tolmachev
Full Text: PDF (102 kB)Archived web conten
Semiconductors V. 38, I. 07
No full textSemiconductors -- July 2004
Volume 38, Issue 7, pp. 737-861
ATOMIC STRUCTURE AND NONELECTRONIC PROPERTIES OF SEMICONDUCTORS
Interphase Interactions and Features of Structural Relaxation in TiBx–n-GaAs (InP, GaP, 6H-SiC) Contacts Subjected to Active Treatment
N. S. Boltovets, V. N. Ivanov, R. V. Konakova, Ya. Ya. Kudrik, O. S. Litvin, P. M. Litvin, and V. V. Milenin
pp. 737-741 Full Text: PDF (392 kB)
Local Symmetry of the Pb1 – xSnxSe Lattice near the Zero-Gap State
E. S. Khuzhakulov
pp. 742-744 Full Text: PDF (54 kB)
Promotion of Metallurgical Reactions at the Ni–SiC Interface by Irradiation with Protons
V. V. Kozlovskii, P. A. Ivanov, D. S. Rumyantsev, V. N. Lomasov, and T. P. Samsonova
pp. 745-750 Full Text: PDF (75 kB)
ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS
Study of the Electrical Properties of CdxHg1 – xTe
P. V. Biryulin, V. I. Kosheleva, and V. I. Turinov
pp. 751-757 Full Text: PDF (98 kB)
Formation of Electrically Active Centers in Silicon Irradiated with Electrons and Then Annealed at Temperatures of 400–700°C
E. P. Neustroev, S. A. Smagulova, I. V. Antonova, and L. N. Safronov
pp. 758-762 Full Text: PDF (64 kB)
The Role of Trapping Levels of Nonequilibrium Electrons during the Formation of Pinning Centers for Domain Walls in the Magnetic Semiconductor CdCr2Se4
A. A. Abdullaev
pp. 763-768 Full Text: PDF (78 kB)
Electrical Properties and Limiting Position of the Fermi Level in InSb Irradiated with Protons
V. N. Brudnyi, V. M. Boiko, I. V. Kamenskaya, and N. G. Kolin
pp. 769-774 Full Text: PDF (97 kB)
Anomalous Solubility of Implanted Nitrogen in Heavily Boron-Doped Silicon
D. I. Tetelbaum, E. I. Zorin[dagger], and N. V. Lisenkova
pp. 775-777 Full Text: PDF (35 kB)
Specific Thermoelectric Properties of Lightly Doped Bi2(TeSe)3 Solid Solutions
P. P. Konstantinov, L. V. Prokof'eva, Yu. I. Ravich, M. I. Fedorov, and V. V. Kompaniets
pp. 778-781 Full Text: PDF (63 kB)
Specific Features of Electron Spin Resonance in 4H-SiC in the Vicinity of the Insulator–Metal Phase Transition: II. Analysis of the Width and Shape of Lines
A. I. Veinger, A. G. Zabrodskii, T. V. Tisnek, and E. N. Mokhov
pp. 782-787 Full Text: PDF (83 kB)
Localization of a Longitudinal Autosoliton in InSb
I. K. Kamilov, A. A. Stepurenko, and A. S. Kovalev
pp. 788-790 Full Text: PDF (68 kB)
Piezospectroscopic Study of the Emission Band of n-GaAs:S Peaked at about 1.2 eV
A. A. Gutkin and M. A. Reshchikov
pp. 791-795 Full Text: PDF (67 kB)
Hysteresis in Ag2Te near and within the Phase Transition Region
S. A. Aliev
pp. 796-799 Full Text: PDF (60 kB)
SEMICONDUCTOR STRUCTURES, INTERFACES, AND SURFACES
Resistance of Proton-Irradiated GaAs Photodetectors to Combined Gamma and Neutron Radiation
A. V. Murel', S. V. Obolenskii, A. G. Fefelov, and E. V. Kiseleva
pp. 800-806 Full Text: PDF (83 kB)
Radiation Resistance of Transistor- and Diode-Type SiC Detectors Irradiated with 8-MeV Protons
N. B. Strokan, A. M. Ivanov, N. S. Savkina, A. A. Lebedev, V. V. Kozlovskii, M. Syvajarvi, and R. Yakimova
pp. 807-811 Full Text: PDF (77 kB)
LOW-DIMENSIONAL SYSTEMS
Nonlinear Properties of Phototropic Media on the Basis of CuxSe Nanoparticles in Quartz Glass
S. A. Zolotovskaya, N. N. Posnov, P. V. Prokosin, K. V. Yumashev, V. S. Gurin, and A. A. Alexeenko
pp. 812-817 Full Text: PDF (90 kB)
Radiative Recombination in Ge+-Implanted SiO2 Films Annealed under Hydrostatic Pressure
I. E. Tyschenko and L. Rebohle
pp. 818-823 Full Text: PDF (91 kB)
The Effect of Acoustic Phonon Confinement on Electron Scattering in GaAs/AlxGa1 – xAs Superlattices
S. I. Borisenko
pp. 824-829 Full Text: PDF (75 kB)
Kapitsa Effect in Crystals with Superlattices
P. V. Gorskii
pp. 830-832 Full Text: PDF (39 kB)
Optical and Structural Properties of InAs Quantum Dot Arrays Grown in an InxGa1 – xAs Matrix on a GaAs Substrate
N. V. Kryzhanovskaya, A. G. Gladyschev, S. A. Blokhin, Yu. G. Musikhin, A. E. Zhukov, M. V. Maksimov, N. D. Zakharov, A. F. Tsatsul'nikov, N. N. Ledentsov, P. Werner, F. Guffart, and D. Bimberg
pp. 833-836 Full Text: PDF (182 kB)
Mechanism of Dicke Superradiance in Semiconductor Heterostructures
L. Ya. Karachinsky, I. I. Novikov, N. Yu. Gordeev, and G. G. Zegrya
pp. 837-841 Full Text: PDF (66 kB)
Manifestation of Size-Related Quantum Oscillations of the Radiative Exciton Recombination Time in the Photoluminescence of Silicon Nanostructures
A. V. Sachenko, Yu. V. Kryuchenko, I. O. Sokolovskii, and O. M. Sreseli
pp. 842-848 Full Text: PDF (93 kB)
AMORPHOUS, VITREOUS, AND POROUS SEMICONDUCTORS
Ultraviolet Luminescence of ZnO Infiltrated into an Opal Matrix
V. M. Masalov, É. N. Samarov, G. I. Volkodav[dagger], G. A. Emel'chenko, A. V. Bazhenov, S. I. Bozhko, I. A. Karpov, A. N. Gruzintsev, and E. E. Yakimov
pp. 849-854 Full Text: PDF (98 kB)
PHYSICS OF SEMICONDUCTOR DEVICES
Leakage Currents over the Surface of CdHgTe-Based Photodiodes
P. V. Biryulin, V. I. Turinov, and E. B. Yakimov
pp. 855-861 Full Text: PDF (162 kB)Archived web conten
Semiconductors V. 34, I. 02
No full textleave(s) : ill; 28 cm.Semiconductors -- February 2000
Volume 34, Issue 2, pp. 123-249
REVIEW
Modification of Semiconductors with Proton Beams. A Review
V. V. Kozlovskii, V. A. Kozlov, and V. N. Lomasov
pp. 123-140 Full Text: PDF (203 kB)
ATOMIC STRUCTURE AND NONELECTRONIC PROPERTIES OF SEMICONDUCTORS
Electronic Properties of Variably Charged Defects in Crystalline Semiconductors
A. N. Kraichinskii, L. I. Shpinar, and I. I. Yaskovets
pp. 141-145 Full Text: PDF (71 kB)
ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS
Electrical Properties of InP Irradiated with Fast Neutrons in a Nuclear Reactor
N. G. Kolin, D. I. Merkurisov, and S. P. Solov'ev
pp. 146-149 Full Text: PDF (55 kB)
Electrical Properties of Transmutation-Doped Indium Phosphide
N. G. Kolin, D. I. Merkurisov, and S. P. Solov'ev
pp. 150-154 Full Text: PDF (67 kB)
Thermal Acceptors in Irradiated Silicon
V. F. Stas', I. V. Antonova, E. P. Neustroev, V. P. Popov, and L. S. Smirnov
pp. 155-160 Full Text: PDF (77 kB)
Influence of Au and Pt on the Concentration Profile of Mn in Si
G. S. Kulikov and Sh. A. Yusupova
pp. 161-162 Full Text: PDF (28 kB)
Variation in Resistance of a Nitrogen-Enriched Silicon Layer as a Result of the Long-Range Effect of Ion Implantation
E. S. Demidov, V. V. Karzanov, and K. A. Markov
pp. 163-165 Full Text: PDF (46 kB)
Contribution of the Electron Subsystem of Crystal into Reactions between Multicharge Centers in Semiconductors
N. I. Boyarkina and A. V. Vasil'ev
pp. 166-170 Full Text: PDF (61 kB)
Control of the Excitation Conditions and the Parameters of Self-Sustained Oscillations of Current in Compensated Silicon Doped with Manganese
M. K. Bakhadyrkhanov, Kh. Azimkhuzhaev, N. F. Zikrillaev, A. B. Sabdullaev, and �. Arzikulov
pp. 171-173 Full Text: PDF (44 kB)
SEMICONDUCTORS STRUCTURES, INTERFACES, AND SURFACES
Reconstruction Transition (4 � 2) [long right-arrow] (2 � 4) on the (001) Surfaces of InAs and GaAs
Yu. G. Galitsyn, S. P. Moshchenko, and A. S. Suranov
pp. 174-180 Full Text: PDF (131 kB)
Physicochemical Properties of the Surface and Near-Surface Region of Epitaxial n-GaAs Layers Modified by Atomic Hydrogen
N. A. Torkhov and S. V. Eremeev
pp. 181-188 Full Text: PDF (342 kB)
Magnetotransport in a Semimetal Channel in p-Ga1 ��� xInxAsySb1 ��� y / p-InAs Heterostructures with Various Compositions of the Solid Solution
T. I. Voronina, T. S. Lagunova, M. P. Mikhailova, K. D. Moiseev, A. E. Rozov, and Yu. P. Yakovlev
pp. 189-194 Full Text: PDF (84 kB)
LOW-DIMENSIONAL SYSTEMS
Thermal Annealing of Defects in InGaAs/GaAs Heterostructures with Three-Dimensional Islands
M. M. Sobolev, I. V. Kochnev, V. M. Lantratov, N. A. Bert, N. A. Cherkashin, N. N. Ledentsov, and D. A. Bedarev
pp. 195-204 Full Text: PDF (237 kB)
On the Constriction of the Hall Current in the Corbino Disk under Quantum Hall Effect Conditions
V. B. Shikin and Yu. V. Shikina
pp. 205-212 Full Text: PDF (90 kB)
AMORPHOUS, VITREOUS, AND POROUS SEMICONDUCTORS
The Effect of Ultrafast Low-Temperature Doping of Vitreous As���Se Films with Copper, Silver, Gold, and Chromium (The Khan Effect)
M. A. Korzhuev
pp. 213-216 Full Text: PDF (70 kB)
Scanning Tunneling Microscopy of Films of Amorphous Carbon Doped with Copper
A. O. Golubok, O. M. Gorbenko, T. K. Zvonareva, S. A. Masalov, V. V. Rozanov, S. G. Yastrebov, and V. I. Ivanov-Omskii
pp. 217-220 Full Text: PDF (147 kB)
Mechanisms of Transport and Injection of Carriers into a Porous Silicon: Electroluminescence in Electrolytes
D. N. Goryachev, G. Polisskii, and O. M. Sreseli
pp. 221-227 Full Text: PDF (109 kB)
PHYSICS OF SEMICONDUCTOR DEVICES
Quantum-Mechanical Features of the Field Effect in Heterotransistors with Modulation- and delta-Doped Regions
V. A. Gergel', V. G. Mokerov, and M. V. Timofeev
pp. 228-232 Full Text: PDF (64 kB)
Ultraquasi-Hydrodynamic Electron Transport in Submicrometer Field Effect MIS Transistors and Heterotransistors
V. A. Gergel', V. G. Mokerov, M. V. Timofeev, and Yu. V. Fedorov
pp. 233-236 Full Text: PDF (50 kB)
Single-Mode InAsSb/InAsSbP Laser (lambda [approximate] 3.2 ��m) Tunable over 100 �
A. P. Danilova, A. N. Imenkov, N. M. Kolchanova, S. Civis, V. V. Sherstnev, and Yu. P. Yakovlev
pp. 237-242 Full Text: PDF (87 kB)
6H-SiC Epilayers as Nuclear Particle Detectors
A. A. Lebedev, N. S. Savkina, A. M. Ivanov, N. B. Strokan, and D. V. Davydov
pp. 243-249 Full Text: PDF (88 kB)The content contained herein is maintained and curated by the Preservation Department.This record is revised and maintained by the content administrators from the Cataloging & Metadata Department
Semiconductors V. 34, I. 02
No full textSemiconductors -- February 2000
Volume 34, Issue 2, pp. 123-249
REVIEW
Modification of Semiconductors with Proton Beams. A Review
V. V. Kozlovskii, V. A. Kozlov, and V. N. Lomasov
pp. 123-140 Full Text: PDF (203 kB)
ATOMIC STRUCTURE AND NONELECTRONIC PROPERTIES OF SEMICONDUCTORS
Electronic Properties of Variably Charged Defects in Crystalline Semiconductors
A. N. Kraichinskii, L. I. Shpinar, and I. I. Yaskovets
pp. 141-145 Full Text: PDF (71 kB)
ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS
Electrical Properties of InP Irradiated with Fast Neutrons in a Nuclear Reactor
N. G. Kolin, D. I. Merkurisov, and S. P. Solov'ev
pp. 146-149 Full Text: PDF (55 kB)
Electrical Properties of Transmutation-Doped Indium Phosphide
N. G. Kolin, D. I. Merkurisov, and S. P. Solov'ev
pp. 150-154 Full Text: PDF (67 kB)
Thermal Acceptors in Irradiated Silicon
V. F. Stas', I. V. Antonova, E. P. Neustroev, V. P. Popov, and L. S. Smirnov
pp. 155-160 Full Text: PDF (77 kB)
Influence of Au and Pt on the Concentration Profile of Mn in Si
G. S. Kulikov and Sh. A. Yusupova
pp. 161-162 Full Text: PDF (28 kB)
Variation in Resistance of a Nitrogen-Enriched Silicon Layer as a Result of the Long-Range Effect of Ion Implantation
E. S. Demidov, V. V. Karzanov, and K. A. Markov
pp. 163-165 Full Text: PDF (46 kB)
Contribution of the Electron Subsystem of Crystal into Reactions between Multicharge Centers in Semiconductors
N. I. Boyarkina and A. V. Vasil'ev
pp. 166-170 Full Text: PDF (61 kB)
Control of the Excitation Conditions and the Parameters of Self-Sustained Oscillations of Current in Compensated Silicon Doped with Manganese
M. K. Bakhadyrkhanov, Kh. Azimkhuzhaev, N. F. Zikrillaev, A. B. Sabdullaev, and É. Arzikulov
pp. 171-173 Full Text: PDF (44 kB)
SEMICONDUCTORS STRUCTURES, INTERFACES, AND SURFACES
Reconstruction Transition (4 × 2) [long right-arrow] (2 × 4) on the (001) Surfaces of InAs and GaAs
Yu. G. Galitsyn, S. P. Moshchenko, and A. S. Suranov
pp. 174-180 Full Text: PDF (131 kB)
Physicochemical Properties of the Surface and Near-Surface Region of Epitaxial n-GaAs Layers Modified by Atomic Hydrogen
N. A. Torkhov and S. V. Eremeev
pp. 181-188 Full Text: PDF (342 kB)
Magnetotransport in a Semimetal Channel in p-Ga1 – xInxAsySb1 – y / p-InAs Heterostructures with Various Compositions of the Solid Solution
T. I. Voronina, T. S. Lagunova, M. P. Mikhailova, K. D. Moiseev, A. E. Rozov, and Yu. P. Yakovlev
pp. 189-194 Full Text: PDF (84 kB)
LOW-DIMENSIONAL SYSTEMS
Thermal Annealing of Defects in InGaAs/GaAs Heterostructures with Three-Dimensional Islands
M. M. Sobolev, I. V. Kochnev, V. M. Lantratov, N. A. Bert, N. A. Cherkashin, N. N. Ledentsov, and D. A. Bedarev
pp. 195-204 Full Text: PDF (237 kB)
On the Constriction of the Hall Current in the Corbino Disk under Quantum Hall Effect Conditions
V. B. Shikin and Yu. V. Shikina
pp. 205-212 Full Text: PDF (90 kB)
AMORPHOUS, VITREOUS, AND POROUS SEMICONDUCTORS
The Effect of Ultrafast Low-Temperature Doping of Vitreous As–Se Films with Copper, Silver, Gold, and Chromium (The Khan Effect)
M. A. Korzhuev
pp. 213-216 Full Text: PDF (70 kB)
Scanning Tunneling Microscopy of Films of Amorphous Carbon Doped with Copper
A. O. Golubok, O. M. Gorbenko, T. K. Zvonareva, S. A. Masalov, V. V. Rozanov, S. G. Yastrebov, and V. I. Ivanov-Omskii
pp. 217-220 Full Text: PDF (147 kB)
Mechanisms of Transport and Injection of Carriers into a Porous Silicon: Electroluminescence in Electrolytes
D. N. Goryachev, G. Polisskii, and O. M. Sreseli
pp. 221-227 Full Text: PDF (109 kB)
PHYSICS OF SEMICONDUCTOR DEVICES
Quantum-Mechanical Features of the Field Effect in Heterotransistors with Modulation- and delta-Doped Regions
V. A. Gergel', V. G. Mokerov, and M. V. Timofeev
pp. 228-232 Full Text: PDF (64 kB)
Ultraquasi-Hydrodynamic Electron Transport in Submicrometer Field Effect MIS Transistors and Heterotransistors
V. A. Gergel', V. G. Mokerov, M. V. Timofeev, and Yu. V. Fedorov
pp. 233-236 Full Text: PDF (50 kB)
Single-Mode InAsSb/InAsSbP Laser (lambda [approximate] 3.2 µm) Tunable over 100 Å
A. P. Danilova, A. N. Imenkov, N. M. Kolchanova, S. Civis, V. V. Sherstnev, and Yu. P. Yakovlev
pp. 237-242 Full Text: PDF (87 kB)
6H-SiC Epilayers as Nuclear Particle Detectors
A. A. Lebedev, N. S. Savkina, A. M. Ivanov, N. B. Strokan, and D. V. Davydov
pp. 243-249 Full Text: PDF (88 kB)Archived web conten
Semiconductors V. 37, I. 05
No full textSemiconductors -- May 2003
Volume 37, Issue 5, pp. 493-615
REVIEW
Artificial GeSi Substrates for Heteroepitaxy: Achievements and Problems
Yu. B. Bolkhovityanov, O. P. Pchelyakov, L. V. Sokolov, and S. I. Chikichev
pp. 493-518 Full Text: PDF (384 kB)
ATOMIC STRUCTURE AND NONELECTRONIC PROPERTIES OF SEMICONDUCTORS
Propagation of Nonequilibrium Phonons in Single-Crystal ZnTe
T. I. Galkina, A. Yu. Klokov, A. I. Sharkov, Yu. V. Korostelin, and V. V. Zaitsev
pp. 519-522 Full Text: PDF (60 kB)
ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS
Magnetooptical Oscillations in Bismuth at T => 77 K
O. V. Kondakov and K. G. Ivanov
pp. 523-525 Full Text: PDF (47 kB)
A Local Specific Feature of Variation in the Spectrum of Picosecond Superluminescence upon Adding Excited Carriers to a Non-Fermi Electron–Hole Plasma in GaAs
N. N. Ageeva, I. L. Bronevoi, A. N. Krivonosov, S. E. Kumekov, and S. V. Stegantsov
pp. 526-531 Full Text: PDF (76 kB)
Phonon-Assisted Exciton Luminescence in GaN Layers Grown by MBE and Chloride-Hydride VPE
M. G. Tkachman, T. V. Shubina, V. N. Jmerik, S. V. Ivanov, P. S. Kop'ev, T. Paskova, and B. Monemar
pp. 532-536 Full Text: PDF (72 kB)
Electronic Properties of Irradiated Semiconductors. A Model of the Fermi Level Pinning
V. N. Brudnyi, S. N. Grinyaev, and N. G. Kolin
pp. 537-545 Full Text: PDF (120 kB)
Relaxation of a Defect Subsystem in Silicon Irradiated with High-Energy Heavy Ions
S. A. Smagulova, I. V. Antonova, E. P. Neustroev, and V. A. Skuratov
pp. 546-550 Full Text: PDF (68 kB)
Diffusion of Europium in Silicon
D. É. Nazyrov
pp. 551-552 Full Text: PDF (28 kB)
SEMICONDUCTOR STRUCTURES, INTERFACES, AND SURFACES
Photosensitive Structures Based on CdGa2Se4 Single Crystals
A. A. Vaipolin, Yu. A. Nikolaev, I. K. Polushina, V. Yu. Rud', Yu. V. Rud', E. I. Terukov, and N. Fernelius
pp. 553-558 Full Text: PDF (87 kB)
LOW-DIMENSIONAL SYSTEMS
Structural and Optical Properties of InAs Quantum Dots in AlGaAs Matrix
D. S. Sizov, Yu. B. Samsonenko, G. E. Tsyrlin, N. K. Polyakov, V. A. Egorov, A. A. Tonkikh, A. E. Zhukov, S. S. Mikhrin, A. P. Vasil'ev, Yu. G. Musikhin, A. F. Tsatsul'nikov, V. M. Ustinov, and N. N. Ledentsov
pp. 559-563 Full Text: PDF (105 kB)
Model of Multi-Island Single-Electron Arrays Based on the Monte Carlo Method
I. I. Abramov, S. A. Ignatenko, and E. G. Novik
pp. 564-568 Full Text: PDF (63 kB)
Dispersion of the Relaxation Time of Quasi-Two-Dimensional Electrons under Conditions of Ionized-Impurity Scattering in a Superlattice with Doped Quantum Wells
S. I. Borisenko
pp. 569-572 Full Text: PDF (57 kB)
Electronic and Optical Properties of AlAs/AlxGa1 – xAs(110) Superlattices
G. F. Karavaev, V. N. Chernyshov, and R. M. Egunov
pp. 573-580 Full Text: PDF (93 kB)
Photoluminescence Study of AlGaAs/GaAs/AlGaAs Double Quantum Wells Separated by a Thin AlAs Layer
G. B. Galiev, M. V. Karachevtseva, V. G. Mokerov, V. A. Strakhov, G. N. Shkerdin, and N. G. Yaremenko
pp. 581-585 Full Text: PDF (69 kB)
Electron Heating by a Strong Longitudinal Electric Field in Quantum Wells
L. E. Vorob'ev, S. N. Danilov, V. L. Zerova, and D. A. Firsov
pp. 586-593 Full Text: PDF (101 kB)
AMORPHOUS, VITREOUS, AND POROUS SEMICONDUCTORS
Semi-Insulating Silicon Carbide Layers Obtained by Diffusion of Vanadium into Porous 4H-SiC
M. G. Mynbaeva, A. A. Lavrent'ev, N. I. Kuznetsov, A. N. Kuznetsov, K. D. Mynbaev, and A. A. Lebedev
pp. 594-597 Full Text: PDF (48 kB)
Quantum-Chemical Simulation of the Influence of Defects on the Infrared Spectrum and the Electronic Structure of a-Se
A. S. Zyubin, F. V. Grigor'ev, and S. A. Dembovskii
pp. 598-603 Full Text: PDF (75 kB)
Phase Transformations Initiated in Thin Layers of Amorphous Silicon by Nanosecond Excimer Laser Pulses
G. D. Ivlev and E. I. Gatskevich
pp. 604-610 Full Text: PDF (119 kB)
PHYSICS OF SEMICONDUCTOR DEVICES
Detection of Hydrogen Impurity in Silicon Radiation Detectors
L. F. Makarenko, F. P. Korshunov, S. B. Lastovskii, and N. I. Zamyatin
pp. 611-615 Full Text: PDF (66 kB)Archived web conten
Technical Physics V. 45, I. 08
No full textdc.description[en_US]Technical Physics -- August 2000
Volume 45, Issue 8, pp. 955-1097
THEORETICAL AND MATHEMATICAL PHYSICS
Analytical Solution to the Skin-Effect Problem for an Arbitrary Accommodation Coefficient of Electron Tangential Momentum
A. V. Latyshev and A. A. Yushkanov
pp. 955-962 Full Text: PDF (91 kB)
Resonance Vibrations of Elastic Waveguides with Inertial Inclusions
D. A. Indeitsev, A. D. Sergeev, and S. S. Litvin
pp. 963-970 Full Text: PDF (114 kB)
A High-Gradient Accelerator Based on a Faster-than-Light Radiation Source
Yu. N. Lazarev and P. V. Petrov
pp. 971-979 Full Text: PDF (148 kB)
ATOMS, SPECTRA, AND RADIATION
Emission of Particles from a Magnetic Trap
Yu. G. Pavlenko
pp. 980-986 Full Text: PDF (94 kB)
GASES AND LIQUIDS
Nonlinear Development of Capillary Waves in a Viscous Liquid Jet
Yu. G. Chesnokov
pp. 987-994 Full Text: PDF (93 kB)
On Capillary Motion of a Viscoelastic Liquid with a Charged Free Surface
S. O. Shiryaeva and O. A. Grigor'ev
pp. 995-1000 Full Text: PDF (76 kB)
Nonlinear Capillary Oscillation of a Charged Drop
D. F. Belonozhko and A. I. Grigor'ev
pp. 1001-1008 Full Text: PDF (105 kB)
GAS DISCHARGES, PLASMA
Electron Heat Transport in the Magnetic Filter of a Volume Plasma-Based Source of H���/D��� Ions
O. L. Veresov, S. V. Grigorenko, and S. Yu. Udovichenko
pp. 1009-1013 Full Text: PDF (75 kB)
SOLIDS
Simulation of the Melting and Crystallization Processes in Monocrystalline Silicon Exposed to Nanosecond Laser Radiation
S. P. Zhvavyi
pp. 1014-1018 Full Text: PDF (70 kB)
The Determination of the Model Interaction Potential Parameters from a Comparison of Experimental and Calculated Ion Ranges in an Amorphous Substance
E. G. Sheikin
pp. 1019-1024 Full Text: PDF (70 kB)
Theoretical and Experimental Study of Photoacoustic and Electron���Acoustic Effects in Solids with Internal Stresses
K. L. Muratikov and A. L. Glazov
pp. 1025-1031 Full Text: PDF (269 kB)
SOLID-STATE ELECTRONICS
Special Features of the Growth of Hydrogenated Amorphous Silicon in PECVD Reactors
Yu. E. Gorbachev, M. A. Zatevakhin, V. V. Krzhizhanovskaya, and V. A. Shveigert
pp. 1032-1041 Full Text: PDF (126 kB)
OPTICS, QUANTUM ELECTRONICS
Electroluminescence of Ion-Implanted Si���SiO2 Structures
A. P. Baraban, P. P. Konorov, L. V. Malyavka, and A. G. Troshikhin
pp. 1042-1044 Full Text: PDF (54 kB)
ACOUSTICS, ACOUSTOELECTRONICS
Acousto-Optical Filtering Using Short Acoustic Trains
V. N. Parygin, A. V. Vershubskii, and K. A. Kholostov
pp. 1045-1050 Full Text: PDF (80 kB)
RADIOPHYSICS
Calculation of the Relaxation Time from the Frequency Spectra of Ferrites
K. Yu. Bazhukov, Yu. V. Gol'chevskii, and L. N. Kotov
pp. 1051-1053 Full Text: PDF (42 kB)
ELECTRON AND ION BEAMS, ACCELERATORS
Electron Acceleration by Gaussian Electromagnetic Beam in a Stationary Magnetic Field
V. P. Milantiev and Ya. N. Shaar
pp. 1054-1057 Full Text: PDF (53 kB)
Six-Electrode Deflectron
L. P. Ovsyannikova and T. Ya. Fishkova
pp. 1058-1062 Full Text: PDF (59 kB)
SURFACES, ELECTRON AND ION EMISSION
Emission of Charged Clusters during Metal Sputtering by Ions
V. I. Matveev
pp. 1063-1069 Full Text: PDF (84 kB)
EXPERIMENTAL INSTRUMENTS AND TECHNIQUES
Coordinate Correction for Parallax for Gamma-Ray Beams Detected by Counters Based on Thin-Film Drift Tubes
S. P. Lobastov, V. M. Lysan, V. D. Peshekhonov, and V. I. Smirichinskii
pp. 1070-1074 Full Text: PDF (74 kB)
Advantages of Anhysteretic Magnetooptic Films in Nondestructive Testing
V. V. Randoshkin, M. Yu. Gusev, Yu. F. Kozlov, and N. S. Neustroev
pp. 1075-1080 Full Text: PDF (881 kB)
BRIEF COMMUNICATIONS
Local Plasma Parameters and Integral Characteristics of a Magnetogasdynamic Channel under Conditions of Ionization Instability
R. V. Vasil'eva, E. A. D'yakonova, A. V. Erofeev, and T. A. Lapushkina
pp. 1081-1084 Full Text: PDF (67 kB)
Free-Running Emerald Laser
V. V. Antsiferov
pp. 1085-1087 Full Text: PDF (54 kB)
Adiabatic Compression of Matter by a Shell
V. V. Prut
pp. 1088-1090 Full Text: PDF (45 kB)
Electroviscous Effect in an Alternating Electric Field
A. A. Ostapenko
pp. 1091-1093 Full Text: PDF (62 kB)
The Behavior of Higher Manganese Silicide Single Crystals under Electrochemical Treatment
F. Yu. Solomkin
pp. 1094-1095 Full Text: PDF (35 kB)
Generation and Amplification of Electromagnetic Waves by an Annular Electron Beam in a Radial Electric Field in Free Space
Yu. V. Kirichenko
pp. 1096-1097 Full Text: PDF (34 kB)dc.description.contributor[en_US]dc.description.contributor[en_US
Technical Physics V. 45, I. 08
No full textTechnical Physics -- August 2000
Volume 45, Issue 8, pp. 955-1097
THEORETICAL AND MATHEMATICAL PHYSICS
Analytical Solution to the Skin-Effect Problem for an Arbitrary Accommodation Coefficient of Electron Tangential Momentum
A. V. Latyshev and A. A. Yushkanov
pp. 955-962 Full Text: PDF (91 kB)
Resonance Vibrations of Elastic Waveguides with Inertial Inclusions
D. A. Indeitsev, A. D. Sergeev, and S. S. Litvin
pp. 963-970 Full Text: PDF (114 kB)
A High-Gradient Accelerator Based on a Faster-than-Light Radiation Source
Yu. N. Lazarev and P. V. Petrov
pp. 971-979 Full Text: PDF (148 kB)
ATOMS, SPECTRA, AND RADIATION
Emission of Particles from a Magnetic Trap
Yu. G. Pavlenko
pp. 980-986 Full Text: PDF (94 kB)
GASES AND LIQUIDS
Nonlinear Development of Capillary Waves in a Viscous Liquid Jet
Yu. G. Chesnokov
pp. 987-994 Full Text: PDF (93 kB)
On Capillary Motion of a Viscoelastic Liquid with a Charged Free Surface
S. O. Shiryaeva and O. A. Grigor'ev
pp. 995-1000 Full Text: PDF (76 kB)
Nonlinear Capillary Oscillation of a Charged Drop
D. F. Belonozhko and A. I. Grigor'ev
pp. 1001-1008 Full Text: PDF (105 kB)
GAS DISCHARGES, PLASMA
Electron Heat Transport in the Magnetic Filter of a Volume Plasma-Based Source of H–/D– Ions
O. L. Veresov, S. V. Grigorenko, and S. Yu. Udovichenko
pp. 1009-1013 Full Text: PDF (75 kB)
SOLIDS
Simulation of the Melting and Crystallization Processes in Monocrystalline Silicon Exposed to Nanosecond Laser Radiation
S. P. Zhvavyi
pp. 1014-1018 Full Text: PDF (70 kB)
The Determination of the Model Interaction Potential Parameters from a Comparison of Experimental and Calculated Ion Ranges in an Amorphous Substance
E. G. Sheikin
pp. 1019-1024 Full Text: PDF (70 kB)
Theoretical and Experimental Study of Photoacoustic and Electron–Acoustic Effects in Solids with Internal Stresses
K. L. Muratikov and A. L. Glazov
pp. 1025-1031 Full Text: PDF (269 kB)
SOLID-STATE ELECTRONICS
Special Features of the Growth of Hydrogenated Amorphous Silicon in PECVD Reactors
Yu. E. Gorbachev, M. A. Zatevakhin, V. V. Krzhizhanovskaya, and V. A. Shveigert
pp. 1032-1041 Full Text: PDF (126 kB)
OPTICS, QUANTUM ELECTRONICS
Electroluminescence of Ion-Implanted Si–SiO2 Structures
A. P. Baraban, P. P. Konorov, L. V. Malyavka, and A. G. Troshikhin
pp. 1042-1044 Full Text: PDF (54 kB)
ACOUSTICS, ACOUSTOELECTRONICS
Acousto-Optical Filtering Using Short Acoustic Trains
V. N. Parygin, A. V. Vershubskii, and K. A. Kholostov
pp. 1045-1050 Full Text: PDF (80 kB)
RADIOPHYSICS
Calculation of the Relaxation Time from the Frequency Spectra of Ferrites
K. Yu. Bazhukov, Yu. V. Gol'chevskii, and L. N. Kotov
pp. 1051-1053 Full Text: PDF (42 kB)
ELECTRON AND ION BEAMS, ACCELERATORS
Electron Acceleration by Gaussian Electromagnetic Beam in a Stationary Magnetic Field
V. P. Milantiev and Ya. N. Shaar
pp. 1054-1057 Full Text: PDF (53 kB)
Six-Electrode Deflectron
L. P. Ovsyannikova and T. Ya. Fishkova
pp. 1058-1062 Full Text: PDF (59 kB)
SURFACES, ELECTRON AND ION EMISSION
Emission of Charged Clusters during Metal Sputtering by Ions
V. I. Matveev
pp. 1063-1069 Full Text: PDF (84 kB)
EXPERIMENTAL INSTRUMENTS AND TECHNIQUES
Coordinate Correction for Parallax for Gamma-Ray Beams Detected by Counters Based on Thin-Film Drift Tubes
S. P. Lobastov, V. M. Lysan, V. D. Peshekhonov, and V. I. Smirichinskii
pp. 1070-1074 Full Text: PDF (74 kB)
Advantages of Anhysteretic Magnetooptic Films in Nondestructive Testing
V. V. Randoshkin, M. Yu. Gusev, Yu. F. Kozlov, and N. S. Neustroev
pp. 1075-1080 Full Text: PDF (881 kB)
BRIEF COMMUNICATIONS
Local Plasma Parameters and Integral Characteristics of a Magnetogasdynamic Channel under Conditions of Ionization Instability
R. V. Vasil'eva, E. A. D'yakonova, A. V. Erofeev, and T. A. Lapushkina
pp. 1081-1084 Full Text: PDF (67 kB)
Free-Running Emerald Laser
V. V. Antsiferov
pp. 1085-1087 Full Text: PDF (54 kB)
Adiabatic Compression of Matter by a Shell
V. V. Prut
pp. 1088-1090 Full Text: PDF (45 kB)
Electroviscous Effect in an Alternating Electric Field
A. A. Ostapenko
pp. 1091-1093 Full Text: PDF (62 kB)
The Behavior of Higher Manganese Silicide Single Crystals under Electrochemical Treatment
F. Yu. Solomkin
pp. 1094-1095 Full Text: PDF (35 kB)
Generation and Amplification of Electromagnetic Waves by an Annular Electron Beam in a Radial Electric Field in Free Space
Yu. V. Kirichenko
pp. 1096-1097 Full Text: PDF (34 kB)Archived web conten
Optical observations of psr j0205+6449
No full textPSR J0205+6449 is an X-ray and radio pulsar in supernova (SN) remnant 3C 58. We report on observations of the central region of 3C 58 using the 4.2-m William Herschel Telescope at the Isaac Newton Group of Telescopes, La Palma, with the intention of identifying the optical counterpart of PSR J0205+6449 and characterizing its pulsar wind nebula (PWN). Around the pulsar position, we identified extended emission with a magnitude of B = 23.97 +/- 0.10 ag, V = 22.95 +/- 0.05 mag and R = 22.15 +/- 0.03 mag consistent with a PWN. From the R-band image, we identified three knots with m(R) = 24.08 +/- 0.07 mag (o1), 24.15 +/- 0.07 mag (o2) and 24.24 +/- 0.08 mag (o3). We confirm the presence of an optical PWN around PSR J0205+6449 and give an upper limit of m(R) approximate to 24 for the optical magnitude of the pulsar. Furthermore, we make the tentative suggestion that our object o1, with an m(R) approximate to 24.08, is the optical counterpart. If confirmed, the pulsar would have an L-R/L-X approximate to 0.004 and an optical efficiency of about five per cent of the Crab pulsar. Such a low efficiency is more consistent with the characteristic age of the pulsar rather than that of SN 1181
- …
