557 research outputs found

    Multimodal microscopy using 'half and half' contact mode and ultrasonic force microscopy

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    Advances in the design and fabrication of multifunctional nanostructured materials require characterization techniques capable of simultaneously mapping multiple material properties with nanoscale resolution. We show that this can be achieved by combining nanomechanical information from ultrasonic force microscopy (UFM) with simultaneously acquired friction force and conductivity measurements from contact mode scanning. This utilizes a 'half and half' approach, where the AFM is operated alternatively in UFM and contact mode, with the switching rate sufficiently fast that simultaneous contact mode and UFM information is acquired at each pixel of an image. We demonstrate the potential of such a multimodal approach through its application to composite systems consisting of graphene islands on a copper surface, single-walled carbon nanotubes (SWNTs) on a silicon oxide substrate, and a graphene epoxy composite. The half and half approach enables the friction force to be measured without topographical cross-talk. Application to the SWNT sample reveals a further advantage; due to the superlubricity of UFM it enables standard contact mode imaging techniques to be applied to delicate samples

    JETP Letters V. 69, I .04

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    JETP Letters -- February 25, 1999 Volume 69, Issue 4, pp. 281-364 GRAVITY, ASTROPHYSICS Rotational quantum friction in superfluids: Radiation from object rotating in superfluid vacuum A. Calogeracos and G. E. Volovik Full Text: PDF (103 kB) FIELDS, PARTICLES, AND NUCLEI Azimuthal modulation of the event rate of cosmic-ray extensive air showers by the geomagnetic field A. A. Ivanov, V. P. Egorova, V. A. Kolosov, A. D. Krasil'nikov, M. I. Pravdin, and I. E. Sleptsov Full Text: PDF (82 kB) Diffractive S and D wave vector mesons in deep inelastic scattering I. P. Ivanov and N. N. Nikolaev Full Text: PDF (127 kB) ATOMS, SPECTRA AND RADIATION Generation of the second optical harmonic in porous-silicon-based structures with a photonic band gap L. A. Golovan', A. M. Zheltikov, P. K. Kashkarov, N. I. Koroteev, M. G. Lisachenko, A. N. Naumov, D. A. Sidorov-Biryukov, V. Yu. Timoshenko, and A. B. Fedotov Full Text: PDF (87 kB) PLASMA, GASES Trapping of Langmuir waves inside an extended inhomogeneity of magnetized plasma V. V. Vas'kov, A. V. Kostrov, G. A. Luchinin, and A. A. Shaikin Full Text: PDF (75 kB) Expansion of matter heated by an ultrashort laser pulse N. A. Inogamov, Yu. V. Petrov, S. I. Anisimov, A. M. Oparin, N. V. Shaposhnikov, D. von der Linde, and J. Meyer-ter-Vehn Full Text: PDF (89 kB) CONDENSED MATTER Effect of electron–phonon interaction on the thermoelectric properties of superlattices Yu. V. Ivanov, M. V. Vedernikov, and Yu. I. Ravich Full Text: PDF (86 kB) Atomic-vacancy ordering and magnetic susceptibility of nonstoichiometric hafnium carbide A. I. Gusev and A. N. Zyryanova Full Text: PDF (101 kB) Magnetic-field-induced toroidal moment in the magnetoelectric Cr2O3 Yu. F. Popov, A. M. Kadomtseva, D. V. Belov, G. P. Vorob'ev, and A. K. Zvezdin Full Text: PDF (98 kB) Skin effect and response of semiconductor barrier structures M. N. Feiginov and V. A. Volkov Full Text: PDF (111 kB) Observation of a hybridization gap in cyclotron resonance spectra of semimetallic InAs/GaSb quantum wells Yu. B. Vasil'ev, S. D. Suchalkin, S. V. Ivanov, P. S. Kop'ev, B. Ya. Mel'tser, and K. von Klitzing Full Text: PDF (61 kB) Cherenkov trapping of waves and discreteness of 6 pi-kink motion in a long Josephson junction A. S. Malishevskii, V. P. Silin, and S. A. Uryupin Full Text: PDF (112 kB) Spin correlations and magnetonuclear cross-correlation in Sm(Sr)–Mn–O perovskites in the low-temperature phase V. V. Runov, G. P. Kopitsa, A. I. Okorokov, M. K. Runova, and H. Glattli Full Text: PDF (127 kB) Comment on the paper "Ground state instability in systems of strongly interacting fermions" V. A. Khodel' Full Text: PDF (43 kB) Reply to the comment by V. A. Khodel' S. A. Artamonov, Yu. G. Pogorelov, and V. R. Shaginyan Full Text: PDF (34 kB)Archived web conten

    Semiconductors V. 38, I. 04

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    Semiconductors -- April 2004 Volume 38, Issue 4, pp. 369-493 ATOMIC STRUCTURE AND NONELECTRONIC PROPERTIES OF SEMICONDUCTORS A Theory of the Effect of Impurities on the Yield Stress of Silicon Crystals B. V. Petukhov pp. 369-375 Full Text: PDF (84 kB) Electric Transport in Gallium Antimonide Single Crystals Involving Molten GaSb–Sn Inclusions A. M. Orlov, A. A. Skvortsov, and A. A. Salanov pp. 376-379 Full Text: PDF (61 kB) ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS Microwave Photoconductivity and Photodielectric Effect in Thin PbS Films Obtained from Thiocarbamide Coordination Compounds N. L. Sermakasheva, G. F. Novikov, Yu. M. Shul'ga, and V. N. Semenov pp. 380-386 Full Text: PDF (83 kB) Capacitance Study of Electron Traps in Low-Temperature-Grown GaAs P. N. Brunkov, A. A. Gutkin, A. K. Moiseenko, Yu. G. Musikhin, V. V. Chaldyshev, N. N. Cherkashin, S. G. Konnikov, V. V. Preobrazhenskii, M. A. Putyato, and B. R. Semyagin pp. 387-392 Full Text: PDF (102 kB) SEMICONDUCTOR STRUCTURES, INTERFACES, AND SURFACES Oscillations of Induced Photopleochroism in ZnO/GaAs Heterojunctions S. E. Nikitin, Yu. A. Nikolaev, V. Yu. Rud', Yu. V. Rud', E. I. Terukov, N. Fernelius, and J. Goldstein pp. 393-396 Full Text: PDF (65 kB) Electron–Phonon Damping Factor for the Landau Quantization of 2D Electrons with a Fine Structure of the Energy Spectrum V. I. Kadushkin pp. 397-401 Full Text: PDF (73 kB) Oxide–p-InSe Heterostructures with Improved Photoelectric Characteristics V. N. Katerinchuk and Z. D. Kovalyuk pp. 402-405 Full Text: PDF (65 kB) Photosensitivity of the Structures Based on Quinary Solid Solutions of the Isoelectronic Series of Germanium A. A. Vaipolin, Yu. A. Nikolaev, V. Yu. Rud', Yu. V. Rud', and E. I. Terukov pp. 406-409 Full Text: PDF (63 kB) LOW-DIMENSIONAL SYSTEMS Energy States in Short-Period Symmetrical and Asymmetrical (GaAs)N/(AlAs)M Superlattices: The Effect of the Boundary Conditions K. E. Glukhov, A. I. Bercha, D. V. Korbutyak, and V. G. Litovchenko pp. 410-418 Full Text: PDF (113 kB) Resonant Gamma–X Tunneling in Single-Barrier GaAs/AlAs/GaAs Heterostructures Yu. N. Khanin, E. E. Vdovin, and Yu. V. Dubrovskii pp. 419-430 Full Text: PDF (178 kB) Tuning the Energy Spectrum of InAs/GaAs Quantum Dots by Varying the Thickness and Composition of the Thin Double GaAs/InGaAs Cladding Layer I. A. Karpovich, B. N. Zvonkov, S. B. Levichev, N. V. Baidus, S. V. Tikhov, D. O. Filatov, A. P. Gorshkov, and S. Yu. Ermakov pp. 431-436 Full Text: PDF (91 kB) Studies of Physical Phenomena in Semiconductor Nanostructures Using Samples with Laterally Nonuniform Layers: Photoluminescence of Tunneling-Coupled Quantum Wells Yu. V. Khabarov, V. V. Kapaev, and V. A. Petrov pp. 437-446 Full Text: PDF (121 kB) A Model of Photoinduced Annealing of Intrinsic Defects in Hexagonal CdSxSe1–x Quantum Dots V. P. Kunets, N. R. Kulish, M. P. Lisitsa, and V. P. Bryksa pp. 447-450 Full Text: PDF (111 kB) Carrier Density Profile in Weakly Coupled GaAs/AlGaAs Superlattices P. N. Brunkov, S. O. Usov, Yu. G. Musikhin, A. E. Zhukov, G. E. Cirlin, V. M. Ustinov, S. G. Konnikov, and G. K. Rasulova pp. 451-454 Full Text: PDF (84 kB) AMORPHOUS, VITREOUS, AND POROUS SEMICONDUCTORS Electrical Properties of Fine-Grained Polycrystalline CdTe S. A. Kolosov, Yu. V. Klevkov, and A. F. Plotnikov pp. 455-460 Full Text: PDF (74 kB) Exciton Photoluminescence in Doped Quasi-1D Structures Based on Silicon A. V. Sachenko, D. V. Korbutyak, Yu. V. Kryuchenko, and O. M. Sreseli pp. 461-467 Full Text: PDF (100 kB) A Small-Molecule Organic Semiconductor F. Yakuphanoglu, M. Aydin, N. Arsu, and M. Sekerci pp. 468-471 Full Text: PDF (67 kB) PHYSICS OF SEMICONDUCTOR DEVICES Characteristics of Nuclear Radiation Detectors Based on Semi-Insulating Gallium Arsenide E. M. Verbitskaya, V. K. Eremin, A. M. Ivanov, N. B. Strokan, V. I. Vasil'ev, V. N. Gavrin, E. P. Veretenkin, Yu. P. Kozlova, V. B. Kulikov, A. V. Markov, and A. Ya. Polyakov pp. 472-479 Full Text: PDF (108 kB) Investigation of Characteristics of InSb-Based Photodiode Linear Arrays P. V. Biryulin, V. I. Turinov, and E. B. Yakimov pp. 480-485 Full Text: PDF (197 kB) Thermal Calculation of SiC p–i–n Diodes P. B. Gamuletskaya, A. V. Kirillov, A. A. Lebedev, L. P. Romanov, and V. A. Smirnov pp. 486-493 Full Text: PDF (82 kB)Archived web conten

    Semiconductors V. 38, I. 03

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    Semiconductors -- March 2004 Volume 38, Issue 3, pp. 245-367 ATOMIC STRUCTURE AND NONELECTRONIC PROPERTIES OF SEMICONDUCTORS Genesis of Nanoscale Defects and Damage in GaAs Subjected to Multipulse Quasi-Static Photostrains in Micrometer-Sized Regions of Semiconductor S. V. Vintsents, A. V. Zaitseva, V. B. Zaitsev, and G. S. Plotnikov pp. 245-252 Full Text: PDF (148 kB) Effects of Predoping and Implantation Conditions on Diffusion of Silicon in Gallium Arsenide Subjected to Electron-Beam Annealing M. V. Ardyshev, V. M. Ardyshev, and Yu. Yu. Kryuchkov pp. 253-257 Full Text: PDF (69 kB) Simulation of the Concentration Dependence of Boron Diffusion in Silicon O. V. Aleksandrov pp. 258-261 Full Text: PDF (55 kB) Chromium Diffusion in Gallium Arsenide S. S. Khludkov, O. B. Koretskaya, and A. V. Tyazhev pp. 262-265 Full Text: PDF (50 kB) Special Features of Sb2 and Sb4 Incorporation in MBE-Grown AlGaAsSb Alloys A. N. Semenov, V. S. Sorokin, V. A. Solov'ev, B. Ya. Mel'tser, and S. V. Ivanov pp. 266-272 Full Text: PDF (82 kB) ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS Determination of Gallium Concentration in Germanium Doped Using Neutron-Induced Nuclear Transmutation from Measurements of Resistivity in the Region of Hopping Conductivity O. P. Ermolaev and T. Yu. Mikul'chik pp. 273-276 Full Text: PDF (54 kB) Effect of Uniform Compression on Photoluminescence Spectra of GaAs Layers Heavily Doped with Beryllium T. S. Shamirzaev, K. S. Zhuravlev, J. Bak-Misiuk, A. Misiuk, J. Z. Domagala, and J. Adamczewska pp. 277-280 Full Text: PDF (48 kB) Impedance of Solid Solutions Based on Gallium-Doped Lead Telluride B. A. Akimov, V. V. Pryadun, L. I. Ryabova, and D. R. Khokhlov pp. 281-283 Full Text: PDF (44 kB) Role of Space Charge in the Resistance Formation in a Bipolar Semiconductor Sample A. Konin pp. 284-287 Full Text: PDF (51 kB) Magnetic Investigations of Cd1 – xZnxTe (x = 0.12, 0.21) Wide-Gap Semiconductors Yu. V. Shaldin, I. Warchulska, M. Kh. Rabadanov, and V. K. Komar' pp. 288-292 Full Text: PDF (68 kB) Transport Phenomena in Coarse-Grain CdTe Polycrystals S. A. Kolosov, Yu. V. Klevkov, and A. F. Plotnikov pp. 293-297 Full Text: PDF (66 kB) A Critical Analysis of Investigation of Deep Levels in High-Resistivity CdS Single Crystals by Photoelectric Transient Spectroscopy A. P. Odrinskii pp. 298-303 Full Text: PDF (77 kB) The Role of Alloying Effects in the Formation of Electronic Structure of Unordered Group III Nitride Solid Solutions A. V. Voznyy and V. G. Deibuk pp. 304-309 Full Text: PDF (122 kB) Optical Properties of Polycrystalline Zinc Selenide A. N. Bryzgalov, V. V. Musatov, and V. V. Buz'ko pp. 310-312 Full Text: PDF (31 kB) SEMICONDUCTOR STRUCTURES, INTERFACES, AND SURFACES Low-Temperature Relaxation of Elastic Stresses in SiGe/Si Heterostructures Irradiated with Ge+ Ions V. S. Avrutin, Yu. A. Agafonov, A. F. Vyatkin, V. I. Zinenko, N. F. Izyumskaya, D. V. Irzhak, D. V. Roshchupkin, É. A. Steinman, V. I. Vdovin, and T. G. Yugova pp. 313-318 Full Text: PDF (172 kB) Native Disorder Potential at the Surface of a Heavily Doped Semiconductor V. B. Bondarenko, V. V. Korablev, and Yu. I. Ravich pp. 319-321 Full Text: PDF (45 kB) LOW-DIMENSIONAL SYSTEMS Spectral Line Broadening in Quantum Wells due to the Coulomb Interaction of Carriers A. A. Afonenko pp. 322-328 Full Text: PDF (90 kB) Dependence of Structural and Optical Properties of QD Arrays in an InAs/GaAs System on Surface Temperature and Growth Rate V. G. Dubrovskii, Yu. G. Musikhin, G. É. Cirlin, V. A. Egorov, N. K. Polyakov, Yu. B. Samsonenko, A. A. Tonkikh, N. V. Kryzhanovskaya, N. A. Bert, and V. M. Ustinov pp. 329-334 Full Text: PDF (191 kB) Quantum Confined Stark Effect and Electroabsorption in Semiconductor Spherical Layers V. A. Arutyunyan, K. S. Aramyan, and G. Sh. Petrosyan pp. 335-339 Full Text: PDF (70 kB) Structural and Optical Properties of Heterostructures with InAs Quantum Dots in an InGaAsN Quantum Well Grown by Molecular-Beam Epitaxy I. P. Soshnikov, N. V. Kryzhanovskaya, N. N. Ledentsov, A. Yu. Egorov, V. V. Mamutin, V. A. Odnoblyudov, V. M. Ustinov, O. M. Gorbenko, H. Kirmse, W. Neumann, and D. Bimberg pp. 340-343 Full Text: PDF (205 kB) AMORPHOUS, VITREOUS, AND POROUS SEMICONDUCTORS Diffusion of Chromium in Thin Hydrogenated Amorphous Silicon Films S. K. Persheyev, P. R. Drapacz, M. J. Rose, and A. G. Fitzgerald pp. 344-346 Full Text: PDF (46 kB) PHYSICS OF SEMICONDUCTOR DEVICES Temperature Dependence of Electroluminescence of Er Ions in Tunnel Diodes Based on (111)Si:(Er, O) A. M. Emel'yanov and N. A. Sobolev pp. 347-351 Full Text: PDF (63 kB) Blue–Green Radiation in GaAs-Based Quantum-Well Lasers N. V. Baidus', A. A. Biryukov, B. N. Zvonkov, S. M. Nekorkin, and V. Ya. Aleshkin pp. 352-354 Full Text: PDF (47 kB) GaAs/Ge Heterostructure Photovoltaic Cells Fabricated by a Combination of MOCVD and Zinc Diffusion Techniques V. M. Andreev, V. P. Khvostikov, N. A. Kalyuzhnyi, S. S. Titkov, O. A. Khvostikova, and M. Z. Shvarts pp. 355-359 Full Text: PDF (74 kB) Internal Optical Loss in Semiconductor Lasers N. A. Pikhtin, S. O. Slipchenko, Z. N. Sokolova, and I. S. Tarasov pp. 360-367 Full Text: PDF (98 kB)Archived web conten

    Semiconductors V. 38, I. 04

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    dc.description[en_US]Semiconductors -- April 2004 Volume 38, Issue 4, pp. 369-493 ATOMIC STRUCTURE AND NONELECTRONIC PROPERTIES OF SEMICONDUCTORS A Theory of the Effect of Impurities on the Yield Stress of Silicon Crystals B. V. Petukhov pp. 369-375 Full Text: PDF (84 kB) Electric Transport in Gallium Antimonide Single Crystals Involving Molten GaSb���Sn Inclusions A. M. Orlov, A. A. Skvortsov, and A. A. Salanov pp. 376-379 Full Text: PDF (61 kB) ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS Microwave Photoconductivity and Photodielectric Effect in Thin PbS Films Obtained from Thiocarbamide Coordination Compounds N. L. Sermakasheva, G. F. Novikov, Yu. M. Shul'ga, and V. N. Semenov pp. 380-386 Full Text: PDF (83 kB) Capacitance Study of Electron Traps in Low-Temperature-Grown GaAs P. N. Brunkov, A. A. Gutkin, A. K. Moiseenko, Yu. G. Musikhin, V. V. Chaldyshev, N. N. Cherkashin, S. G. Konnikov, V. V. Preobrazhenskii, M. A. Putyato, and B. R. Semyagin pp. 387-392 Full Text: PDF (102 kB) SEMICONDUCTOR STRUCTURES, INTERFACES, AND SURFACES Oscillations of Induced Photopleochroism in ZnO/GaAs Heterojunctions S. E. Nikitin, Yu. A. Nikolaev, V. Yu. Rud', Yu. V. Rud', E. I. Terukov, N. Fernelius, and J. Goldstein pp. 393-396 Full Text: PDF (65 kB) Electron���Phonon Damping Factor for the Landau Quantization of 2D Electrons with a Fine Structure of the Energy Spectrum V. I. Kadushkin pp. 397-401 Full Text: PDF (73 kB) Oxide���p-InSe Heterostructures with Improved Photoelectric Characteristics V. N. Katerinchuk and Z. D. Kovalyuk pp. 402-405 Full Text: PDF (65 kB) Photosensitivity of the Structures Based on Quinary Solid Solutions of the Isoelectronic Series of Germanium A. A. Vaipolin, Yu. A. Nikolaev, V. Yu. Rud', Yu. V. Rud', and E. I. Terukov pp. 406-409 Full Text: PDF (63 kB) LOW-DIMENSIONAL SYSTEMS Energy States in Short-Period Symmetrical and Asymmetrical (GaAs)N/(AlAs)M Superlattices: The Effect of the Boundary Conditions K. E. Glukhov, A. I. Bercha, D. V. Korbutyak, and V. G. Litovchenko pp. 410-418 Full Text: PDF (113 kB) Resonant Gamma���X Tunneling in Single-Barrier GaAs/AlAs/GaAs Heterostructures Yu. N. Khanin, E. E. Vdovin, and Yu. V. Dubrovskii pp. 419-430 Full Text: PDF (178 kB) Tuning the Energy Spectrum of InAs/GaAs Quantum Dots by Varying the Thickness and Composition of the Thin Double GaAs/InGaAs Cladding Layer I. A. Karpovich, B. N. Zvonkov, S. B. Levichev, N. V. Baidus, S. V. Tikhov, D. O. Filatov, A. P. Gorshkov, and S. Yu. Ermakov pp. 431-436 Full Text: PDF (91 kB) Studies of Physical Phenomena in Semiconductor Nanostructures Using Samples with Laterally Nonuniform Layers: Photoluminescence of Tunneling-Coupled Quantum Wells Yu. V. Khabarov, V. V. Kapaev, and V. A. Petrov pp. 437-446 Full Text: PDF (121 kB) A Model of Photoinduced Annealing of Intrinsic Defects in Hexagonal CdSxSe1���x Quantum Dots V. P. Kunets, N. R. Kulish, M. P. Lisitsa, and V. P. Bryksa pp. 447-450 Full Text: PDF (111 kB) Carrier Density Profile in Weakly Coupled GaAs/AlGaAs Superlattices P. N. Brunkov, S. O. Usov, Yu. G. Musikhin, A. E. Zhukov, G. E. Cirlin, V. M. Ustinov, S. G. Konnikov, and G. K. Rasulova pp. 451-454 Full Text: PDF (84 kB) AMORPHOUS, VITREOUS, AND POROUS SEMICONDUCTORS Electrical Properties of Fine-Grained Polycrystalline CdTe S. A. Kolosov, Yu. V. Klevkov, and A. F. Plotnikov pp. 455-460 Full Text: PDF (74 kB) Exciton Photoluminescence in Doped Quasi-1D Structures Based on Silicon A. V. Sachenko, D. V. Korbutyak, Yu. V. Kryuchenko, and O. M. Sreseli pp. 461-467 Full Text: PDF (100 kB) A Small-Molecule Organic Semiconductor F. Yakuphanoglu, M. Aydin, N. Arsu, and M. Sekerci pp. 468-471 Full Text: PDF (67 kB) PHYSICS OF SEMICONDUCTOR DEVICES Characteristics of Nuclear Radiation Detectors Based on Semi-Insulating Gallium Arsenide E. M. Verbitskaya, V. K. Eremin, A. M. Ivanov, N. B. Strokan, V. I. Vasil'ev, V. N. Gavrin, E. P. Veretenkin, Yu. P. Kozlova, V. B. Kulikov, A. V. Markov, and A. Ya. Polyakov pp. 472-479 Full Text: PDF (108 kB) Investigation of Characteristics of InSb-Based Photodiode Linear Arrays P. V. Biryulin, V. I. Turinov, and E. B. Yakimov pp. 480-485 Full Text: PDF (197 kB) Thermal Calculation of SiC p���i���n Diodes P. B. Gamuletskaya, A. V. Kirillov, A. A. Lebedev, L. P. Romanov, and V. A. Smirnov pp. 486-493 Full Text: PDF (82 kB)dc.description.contributor[en_US]dc.description.contributor[en_US

    Semiconductors V. 36, I. 08

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    Semiconductors -- August 2002 Volume 36, Issue 8, pp. 837-951 ATOMIC STRUCTURE AND NONELECTRONIC PROPERTIES OF SEMICONDUCTORS Measurements of Parameters of the Low-Temperature Molecular-Beam Epitaxy of GaAs V. V. Preobrazhenskii, M. A. Putyato, and B. R. Semyagin pp. 837-840 Full Text: PDF (60 kB) Threshold of Inelastic Strain Formation in Si and GaAs Surface Layers under Multiple Pulsed Laser Irradiation S. V. Vintsents, A. V. Zoteev, and G. S. Plotnikov pp. 841-844 Full Text: PDF (58 kB) Dissociation Energies of a CiCs Complex and the A Center in Silicon N. I. Boyarkina, S. A. Smagulova, and A. A. Artem'ev pp. 845-847 Full Text: PDF (46 kB) ATOMIC STRUCTURE AND NONELECTRONIC PROPERTIES Initial Stages of Growth of Diamond Island Films on Crystalline Silicon N. A. Feoktistov, V. V. Afanas'ev, V. G. Golubev, S. A. Grudinkin, S. A. Kukushkin, and V. G. Melekhin pp. 848-851 Full Text: PDF (141 kB) ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS Local Structure of Zinc Impurity Centers in Lead Chalcogenides and Pb1 – xSnxTe Solid Solutions S. A. Nemov and N. P. Seregin pp. 852-854 Full Text: PDF (100 kB) Influence of Tellurium Impurity on the Properties of Ga1 – XInXAsYSb1 – Y (X > 0.22) Solid Solutions T. I. Voronina, T. S. Lagunova, E. V. Kunitsyna, Ya. A. Parkhomenko, M. A. Sipovskaya, and Yu. P. Yakovlev pp. 855-862 Full Text: PDF (104 kB) Optical Properties of Bulk and Epitaxial Unordered GaxIn1 – xP Semiconductor Alloys Ya. I. Vyklyuk, V. G. Deibuk, and S. V. Zolotarev pp. 863-868 Full Text: PDF (89 kB) Electrical and Thermoelectric Properties of p-Ag2Te F. F. Aliev, E. M. Kerimova, and S. A. Aliev pp. 869-873 Full Text: PDF (74 kB) Photoconductivity of Coarse-Grained CdTe Polycrystals S. A. Medvedev, Yu. V. Klevkov, S. A. Kolosov, V. S. Krivobok, and A. F. Plotnikov pp. 874-877 Full Text: PDF (51 kB) Time-Resolved Photoluminescence of Polycrystalline GaN Layers on Metal Substrates A. V. Andrianov, K. Yamada, H. Tampo, H. Asahi, V. Yu. Nekrasov, Z. N. Petrovskaya, O. M. Sreseli, and N. N. Zinov'ev pp. 878-882 Full Text: PDF (66 kB) SEMICONDUCTOR STRUCTURES, INTERFACES, AND SURFACES Low-Threshold Defect Formation and Modification of Ge Surface Layer under Elastic and Elastoplastic Pulsed Laser Effects S. V. Vintsents, V. B. Zaitsev, A. V. Zoteev, G. S. Plotnikov, A. I. Rodionov, and A. V. Chervyakov pp. 883-888 Full Text: PDF (79 kB) Electron Tunneling through a Double Barrier in a Reverse-Biased Metal–Oxide–Silicon Structure G. G. Kareva, M. I. Vexler, I. V. Grekhov, and A. F. Shulekin pp. 889-894 Full Text: PDF (89 kB) LOW-DIMENSIONAL SYSTEMS Structure of Heterointerfaces and Photoluminescence Properties of GaAs/AlAs Superlattices Grown on (311)A and (311)B Surfaces: Comparative Analysis G. A. Lyubas, N. N. Ledentsov, D. Litvinov, B. R. Semyagin, I. P. Soshnikov, V. M. Ustinov, V. V. Bolotov, and D. Gerthsen pp. 895-898 Full Text: PDF (138 kB) Wavelength of Emission from InGaAsN Quantum Wells as a Function of Composition of the Quaternary Compound A. E. Zhukov, A. R. Kovsh, E. S. Semenova, V. M. Ustinov, L. Wei, J.-S. Wang, and J. Y. Chi pp. 899-902 Full Text: PDF (66 kB) Two-Dimensional p–n Junction under Equilibrium Conditions A. Sh. Achoyan, A. É. Yesayan, É. M. Kazaryan, and S. G. Petrosyan pp. 903-907 Full Text: PDF (70 kB) Calculations of the Charge-Carrier Mobility and the Thermoelectric Figure of Merit for Multiple-Quantum-Well Structures D. A. Pshenai-Severin and Yu. I. Ravich pp. 908-915 Full Text: PDF (91 kB) Nonlinear Response and Nonlinear Coherent Generation in Resonant-Tunneling Diode in a Broad Frequency Range V. F. Elesin, I. Yu. Kateev, and A. I. Podlivaev pp. 916-920 Full Text: PDF (61 kB) Anomalies of the Fractional Quantum Hall Effect in a Wide Ballistic Wire Z. D. Kvon, E. B. Olshanetsky, A. E. Plotnikov, A. I. Toropov, and J. C. Portal pp. 921-923 Full Text: PDF (46 kB) Special Features of Electrical Conductivity in a Parabolic Quantum Well in a Magnetic Field E. P. Sinyavskii and R. A. Khamidullin pp. 924-928 Full Text: PDF (59 kB) Manifestation of A(+) Centers in the Luminescence of Two-Dimensional GaAs/AlGaAs Structures Yu. L. Ivanov, N. V. Agrinskaya, P. V. Petrov, V. M. Ustinov, and G. É. Tsyrlin pp. 929-931 Full Text: PDF (43 kB) One-Dimensional Photonic Crystal Obtained by Vertical Anisotropic Etching of Silicon V. A. Tolmachev, L. S. Granitsyna, E. N. Vlasova, B. Z. Volchek, A. V. Nashchekin, A. D. Remenyuk, and E. V. Astrova pp. 932-935 Full Text: PDF (263 kB) AMORPHOUS, VITREOUS, AND POROUS SEMICONDUCTORS Gamma-Irradiation-Induced Metastable States of Undoped Amorphous Hydrogenated Silicon M. S. Ablova, G. S. Kulikov, and S. K. Persheev pp. 936-940 Full Text: PDF (73 kB) Fabrication and Properties of Amorphous Hydrogenated Boron Carbide Films A. S. Anan'ev, O. I. 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