4,706 research outputs found

    “I Began Understand Piłsudski, When I Reached His Age”. Memoirs of G.F. Matveev in the Form of Interview

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    Gennady Filippovich Matveev (born in 1943), Doctor of Historical Sciences, Honored Professor of Moscow University, Head of the Department of the History of the Southern and Western Slavs of Moscow State University, one of the leading domestic specialists in the modern history of Poland, tells about his life and professional activities at the request of the editors of the journal Slavic World in the Third Millennium. Born on the banks of the Volga, G.F. Matveev spent his childhood and youth in Western Ukraine. Since 1966, his whole life has been inextricably linked with the Moscow University, where he received a diploma in history, completed his postgraduate studies, defended his candidate's and doctoral theses, and where he has been teaching for half a century and was head of the department for more than three decades. The students of G.F. Matveev completed and defended a large number of diplomas, master's and candidate's theses, they work in different cities of the country and abroad. As a historian, G.F. Matveev invariably relies on deep researches in archives, introduces a lot of new material into circulation, his innovative research on the history of the Soviet-Polish war of 1920 caused fruitful discussions both in Russia and in Poland, prompting other historians to further research. Gennady Filippovich is the author of the first fundamental biography in Russian of the key statesman of Poland of the 20th century Józef Piƚsudski. Not limited to the problems of Polish history, G.F. Matveev turned to comparative historical research on the material of various Slavic countries, in particular, on the ideology of peasant movements in the period between the two world wars. As an author and editor, he took part in the work on textbooks on the history of the southern and western Slavs. For more than half a century, G.F. Matveev maintains close ties with the Institute of Slavic Studies of the Russian Academy of Sciences, he is a member of the editorial boards of historical journals, both Russian and Polish. G.F. Matveev talks about his post-war childhood, youth, impressions of his student years, about his work at the Moscow University, about his numerous trips to Poland and more than half a century of communication with Polish colleagues. He also shares his opinion on the current development and prospects of Polish studies in Russia, the possibilities for further dialogue between the two cultures

    Semiconductors V. 36, I. 07

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    Semiconductors -- July 2002 Volume 36, Issue 7, pp. 717-836 REVIEWS Wannier–Stark Localization in the Natural Superlattice of Silicon Carbide Polytypes V. I. Sankin pp. 717-739 Full Text: PDF (428 kB) ATOMIC STRUCTURE AND NONELECTRONIC PROPERTIES OF SEMICONDUCTORS Effect of Long-Term Annealing on Accumulation of Impurities Yu. A. Bykovskii[dagger], G. M. Voronkova, V. V. Grigor'ev, V. V. Zuev, A. V. Zuev, A. D. Kiryukhin, V. I. Chmyrev, and S. A. Shcherbakov pp. 740-742 Full Text: PDF (41 kB) Analysis of the Size-Distribution Function of Metallic Nanoclusters in a Hydrogenated Amorphous Carbon Host V. I. Ivanov-Omskii, A. B. Lodygin, and S. G. Yastrebov pp. 743-746 Full Text: PDF (156 kB) ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS Modification of the Electrical and Photoelectric Properties of Mg0.15Cd0.85Te Solid Solutions as a Result of Pulsed Laser Irradiation within the Transparency Range A. Baidullaeva, E. F. Venger, A. I. Vlasenko, A. V. Lomovtsev, and P. E. Mozol' pp. 747-750 Full Text: PDF (54 kB) Titanium, Vanadium, and Nickel Impurities in 3C-SiC: Electronic Structure and Lattice Relaxation Effects N. I. Medvedeva, É. I. Yuryeva, and A. L. Ivanovskii pp. 751-754 Full Text: PDF (99 kB) Parameters of Excitons in Monoclinic Zinc Diarsenide A. I. Kozlov, S. G. Kozlova, A. V. Matveev, and V. V. Sobolev pp. 755-757 Full Text: PDF (49 kB) Structure and Properties of Silicon Carbide Grown on Porous Substrate by Vacuum Sublimation Epitaxy N. S. Savkina, V. V. Ratnikov, A. Yu. Rogachev, V. B. Shuman, A. S. Tregubova, and A. A. Volkova pp. 758-762 Full Text: PDF (158 kB) The Effect of Composition on the Properties and Defect Structure of the CdS–Ga2S3 Solid Solution E. F. Venger, I. B. Ermolovich, V. V. Milenin, and V. P. Papusha pp. 763-771 Full Text: PDF (127 kB) Microwave Magnetoresistance of Compensated p-Ge:Ga in the Region of the Insulator–Metal Phase Transition A. I. Veinger, A. G. Zabrodskii, and T. V. Tisnek pp. 772-781 Full Text: PDF (115 kB) Thermally Stimulated Currents in MnIn2S4 Single Crystals N. N. Niftiev pp. 782-783 Full Text: PDF (50 kB) E0 Photoreflectance Spectra of Semiconductor Structures with a High Density of Interface States R. V. Kuz'menko and É. P. Domashevskaya pp. 784-788 Full Text: PDF (59 kB) SEMICONDUCTOR STRUCTURES, INTERFACES, AND SURFACES Switching Effect in Si–CdS Heterojunctions Synthesized in Highly Nonequilibrium Conditions A. P. Belyaev and V. P. Rubets pp. 789-792 Full Text: PDF (80 kB) Special Features of the Magnetodiode Effect in Multivalley Semiconductors at Low Temperatures A. A. Abramov and I. N. Gorbatyi pp. 793-799 Full Text: PDF (97 kB) Behavior of Charge in a Buried Insulator of Silicon-on-Insulator Structures Subjected to Electric Fields D. V. Nikolaev, I. V. Antonova, O. V. Naumova, V. P. Popov, and S. A. Smagulova pp. 800-804 Full Text: PDF (70 kB) Study of the Effect of Electron Irradiation on a GaSe–SiO2 Structure by Spectroscopic Methods T. D. Ibragimov, E. A. Dzhafarova, and Z. B. Safarov pp. 805-807 Full Text: PDF (45 kB) LOW-DIMENSIONAL SYSTEMS Calculation of the Low-Field Mobility of Quasi-Two-Dimensional Electrons in a GaAs/Al0.36Ga0.64As Superlattice at Temperatures in the Region of 77 K S. I. Borisenko pp. 808-815 Full Text: PDF (103 kB) GaAs in GaSb: Strained Nanostructures for Mid-Infrared Optoelectronics V. A. Solov'ev, A. A. Toropov, B. Ya. Meltser, Ya. A. Terent'ev, R. N. Kyutt, A. A. Sitnikova, A. N. Semenov, S. V. Ivanov, Motlan, E. M. Goldys, and P. S. Kop'ev pp. 816-820 Full Text: PDF (178 kB) Inhomogeneous Broadening of the Ground Electron Level in a Quantum Dot Array V. I. Belyavskii and S. V. Shevtsov pp. 821-827 Full Text: PDF (85 kB) PHYSICS OF SEMICONDUCTOR DEVICES Optically Pumped "Immersion-Lens" Infrared Light Emitting Diodes Based on Narrow-Gap III–V Semiconductors M. Aidaraliev, N. V. Zotova, S. A. Karandashev, B. A. Matveev, M. A. Remennyi, N. M. Stus', and G. N. Talalakin pp. 828-831 Full Text: PDF (58 kB) Amorphization of the Surface Region in Epitaxial n-GaAs Treated with Atomic Hydrogen N. A. Torkhov, I. V. Ivonin, and E. V. Chernikov pp. 832-836 Full Text: PDF (253 kB)Archived web conten

    Semiconductors V. 36, I. 07

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    leave(s) : ill; 28 cm.Semiconductors -- July 2002 Volume 36, Issue 7, pp. 717-836 REVIEWS Wannier���Stark Localization in the Natural Superlattice of Silicon Carbide Polytypes V. I. Sankin pp. 717-739 Full Text: PDF (428 kB) ATOMIC STRUCTURE AND NONELECTRONIC PROPERTIES OF SEMICONDUCTORS Effect of Long-Term Annealing on Accumulation of Impurities Yu. A. Bykovskii[dagger], G. M. Voronkova, V. V. Grigor'ev, V. V. Zuev, A. V. Zuev, A. D. Kiryukhin, V. I. Chmyrev, and S. A. Shcherbakov pp. 740-742 Full Text: PDF (41 kB) Analysis of the Size-Distribution Function of Metallic Nanoclusters in a Hydrogenated Amorphous Carbon Host V. I. Ivanov-Omskii, A. B. Lodygin, and S. G. Yastrebov pp. 743-746 Full Text: PDF (156 kB) ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS Modification of the Electrical and Photoelectric Properties of Mg0.15Cd0.85Te Solid Solutions as a Result of Pulsed Laser Irradiation within the Transparency Range A. Baidullaeva, E. F. Venger, A. I. Vlasenko, A. V. Lomovtsev, and P. E. Mozol' pp. 747-750 Full Text: PDF (54 kB) Titanium, Vanadium, and Nickel Impurities in 3C-SiC: Electronic Structure and Lattice Relaxation Effects N. I. Medvedeva, �. I. Yuryeva, and A. L. Ivanovskii pp. 751-754 Full Text: PDF (99 kB) Parameters of Excitons in Monoclinic Zinc Diarsenide A. I. Kozlov, S. G. Kozlova, A. V. Matveev, and V. V. Sobolev pp. 755-757 Full Text: PDF (49 kB) Structure and Properties of Silicon Carbide Grown on Porous Substrate by Vacuum Sublimation Epitaxy N. S. Savkina, V. V. Ratnikov, A. Yu. Rogachev, V. B. Shuman, A. S. Tregubova, and A. A. Volkova pp. 758-762 Full Text: PDF (158 kB) The Effect of Composition on the Properties and Defect Structure of the CdS���Ga2S3 Solid Solution E. F. Venger, I. B. Ermolovich, V. V. Milenin, and V. P. Papusha pp. 763-771 Full Text: PDF (127 kB) Microwave Magnetoresistance of Compensated p-Ge:Ga in the Region of the Insulator���Metal Phase Transition A. I. Veinger, A. G. Zabrodskii, and T. V. Tisnek pp. 772-781 Full Text: PDF (115 kB) Thermally Stimulated Currents in MnIn2S4 Single Crystals N. N. Niftiev pp. 782-783 Full Text: PDF (50 kB) E0 Photoreflectance Spectra of Semiconductor Structures with a High Density of Interface States R. V. Kuz'menko and �. P. Domashevskaya pp. 784-788 Full Text: PDF (59 kB) SEMICONDUCTOR STRUCTURES, INTERFACES, AND SURFACES Switching Effect in Si���CdS Heterojunctions Synthesized in Highly Nonequilibrium Conditions A. P. Belyaev and V. P. Rubets pp. 789-792 Full Text: PDF (80 kB) Special Features of the Magnetodiode Effect in Multivalley Semiconductors at Low Temperatures A. A. Abramov and I. N. Gorbatyi pp. 793-799 Full Text: PDF (97 kB) Behavior of Charge in a Buried Insulator of Silicon-on-Insulator Structures Subjected to Electric Fields D. V. Nikolaev, I. V. Antonova, O. V. Naumova, V. P. Popov, and S. A. Smagulova pp. 800-804 Full Text: PDF (70 kB) Study of the Effect of Electron Irradiation on a GaSe���SiO2 Structure by Spectroscopic Methods T. D. Ibragimov, E. A. Dzhafarova, and Z. B. Safarov pp. 805-807 Full Text: PDF (45 kB) LOW-DIMENSIONAL SYSTEMS Calculation of the Low-Field Mobility of Quasi-Two-Dimensional Electrons in a GaAs/Al0.36Ga0.64As Superlattice at Temperatures in the Region of 77 K S. I. Borisenko pp. 808-815 Full Text: PDF (103 kB) GaAs in GaSb: Strained Nanostructures for Mid-Infrared Optoelectronics V. A. Solov'ev, A. A. Toropov, B. Ya. Meltser, Ya. A. Terent'ev, R. N. Kyutt, A. A. Sitnikova, A. N. Semenov, S. V. Ivanov, Motlan, E. M. Goldys, and P. S. Kop'ev pp. 816-820 Full Text: PDF (178 kB) Inhomogeneous Broadening of the Ground Electron Level in a Quantum Dot Array V. I. Belyavskii and S. V. Shevtsov pp. 821-827 Full Text: PDF (85 kB) PHYSICS OF SEMICONDUCTOR DEVICES Optically Pumped "Immersion-Lens" Infrared Light Emitting Diodes Based on Narrow-Gap III���V Semiconductors M. Aidaraliev, N. V. Zotova, S. A. Karandashev, B. A. Matveev, M. A. Remennyi, N. M. Stus', and G. N. Talalakin pp. 828-831 Full Text: PDF (58 kB) Amorphization of the Surface Region in Epitaxial n-GaAs Treated with Atomic Hydrogen N. A. Torkhov, I. V. Ivonin, and E. V. Chernikov pp. 832-836 Full Text: PDF (253 kB)The content contained herein is maintained and curated by the Preservation Department.This record is revised and maintained by the content administrators from the Cataloging & Metadata Department

    Astronomy Letters, V. 27, I. 07

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    Astronomy Letters -- July 2001 Volume 27, Issue 7, pp. 411-480 Radial Distributions of Gamma-Ray Bursts and Type Ib/c Supernovae in Galaxies D. Yu. Tsvetkov, S. I. Blinnikov, and N. N. Pavlyuk pp. 411-415 Full Text: PDF (55 kB) Anisotropy in the Sky Distribution of Short Gamma-Ray Bursts V. F. Litvin, S. A. Matveev, S. V. Mamedov, and V. V. Orlov pp. 416-420 Full Text: PDF (423 kB) Formation of the Spiral Structure in SB Galaxies V. L. Polyachenko and E. V. Polyachenko pp. 421-439 Full Text: PDF (467 kB) An Iterative Method for Simultaneously Computing the Synthesis of Light and Heavy Elements D. K. Nadyozhin and I. V. Panov pp. 440-444 Full Text: PDF (70 kB) A Polarization–Intensity Anticorrelation Diagram for the Solar Coronal Green Line O. G. Badalyan and J. Sýkora pp. 445-450 Full Text: PDF (87 kB) Effects of Activity Complexes and Active Longitudes on Variations in Total Solar Irradiance A. V. Mordvinov and R. C. Willson pp. 451-454 Full Text: PDF (141 kB) Orbital Evolution of Saturn's New Outer Satellites and Their Classification M. A. Vashkov'yak pp. 455-463 Full Text: PDF (155 kB) Celestial-Mechanical Peculiarities of Uranus's Satellite System M. A. Vashkov'yak pp. 464-469 Full Text: PDF (75 kB) Approach–Ejection Correlation in the General Three-Body Problem V. V. Orlov, A. V. Petrova, and A. I. Martynova pp. 470-474 Full Text: PDF (73 kB) Dynamical Causes of Asymmetry in the Arrangement of Gaps in the Asteroid Belt A. P. Markeev pp. 475-479 Full Text: PDF (65 kB) ERRATA Erratum: "A Two-Dimensional Hydrostatically Equilibrium Atmosphere of a Neutron Star with Given Differential Rotation" [Pis'ma Astron. Zh. 26, 917 (2000); Astronomy Letters 26, 788 (2000)] V. S. Imshennik and K. V. Manukovskii p. 480 Full Text: PDF (21 kB)Archived web conten

    Semiconductors V. 38, I. 10

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    Semiconductors -- October 2004 Volume 38, Issue 10, pp. 1115-1239 REVIEW Photosensitive Polymer Semiconductors E. L. Aleksandrova pp. 1115-1159 Full Text: PDF (557 kB) ATOMIC STRUCTURE AND NONELECTRONIC PROPERTIES OF SEMICONDUCTORS Determination of the Oxygen Diffusion Profile in Polycrystalline Lead Selenide Layers Using Nuclear Microanalysis A. E. Gamarts, V. M. Lebedev, V. A. Moshnikov, and D. B. Chesnokova pp. 1160-1163 Full Text: PDF (53 kB) ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS Electronic and Structural Transitions in Pb1 – xGexTe:Ga Alloys under Pressure E. P. Skipetrov, E. A. Zvereva, O. S. Volkova, A. V. Golubev, A. Yu. Mollaev, R. K. Arslanov, and V. E. Slyn'ko pp. 1164-1167 Full Text: PDF (57 kB) Magnetic-Field Dependences of the Conductivity and Hall Factor in MBE-Grown CdXHg1 – XTe Layers P. A. Bakhtin, S. A. Dvoretskii, V. S. Varavin, A. P. Korobkin, N. N. Mikhailov, and Yu. G. Sidorov pp. 1168-1171 Full Text: PDF (61 kB) Effect of Low-Temperature Annealing on Electrical Properties of n-HgCdTe P. A. Bakhtin, S. A. Dvoretskii, V. S. Varavin, A. P. Korobkin, N. N. Mikhailov, I. V. Sabinina, and Yu. G. Sidorov pp. 1172-1175 Full Text: PDF (56 kB) Formation and Study of Buried SiC Layers with a High Content of Radiation Defects E. V. Bogdanova, V. V. Kozlovski, D. S. Rumyantsev, A. A. Volkova, and A. A. Lebedev pp. 1176-1178 Full Text: PDF (85 kB) A Model of Electrical Isolation in GaN and ZnO Bombarded with Light Ions A. I. Titov, P. A. Karasev, and S. O. Kucheyev pp. 1179-1186 Full Text: PDF (98 kB) Optical and Electrical Properties of 4H-SiC Irradiated with Fast Neutrons and High-Energy Heavy Ions E. V. Kalinina, G. F. Kholuyanov, G. A. Onushkin, D. V. Davydov, A. M. Strel'chuk, A. O. Konstantinov, A. Hallén, A. Yu. Nikiforov, V. A. Skuratov, and K. Havancsak pp. 1187-1191 Full Text: PDF (92 kB) SEMICONDUCTOR STRUCTURES, INTERFACES, AND SURFACES Fabrication and Photosensitivity of Heterojunctions Based on CuIn3Se5 Crystals I. V. Bodnar', S. E. Nikitin, G. A. Il'chuk, V. Yu. Rud', Yu. V. Rud', and M. V. Yakushev pp. 1192-1197 Full Text: PDF (107 kB) Influence of Hydrogen Sulfide on Electrical and Photoelectric Properties of Al–p-Si–SnO2:Cu–Ag Heterostructures S. V. Slobodchikov[dagger], E. V. Russu, É. V. Ivanov, Yu. G. Malinin, and Kh. M. Salikhov pp. 1198-1201 Full Text: PDF (61 kB) LOW-DIMENSIONAL SYSTEMS Suppression of Dome-Shaped Clusters During Molecular Beam Epitaxy of Ge on Si(100) A. A. Tonkikh, G. E. Cirlin, V. G. Dubrovskii, V. M. Ustinov, and P. Werner pp. 1202-1206 Full Text: PDF (387 kB) Effect of Nonradiative Recombination Centers on Photoluminescence Efficiency in Quantum Dot Structures M. V. Maksimov, D. S. Sizov, A. G. Makarov, I. N. Kayander, L. V. Asryan, A. E. Zhukov, V. M. Ustinov, N. A. Cherkashin, N. A. Bert, N. N. Ledentsov, and D. Bimberg pp. 1207-1211 Full Text: PDF (98 kB) Calculation of the Thermoelectric Figure of Merit for Multilayer Structures with Quantum Wells in the Case of Carrier Scattering by Polar Optical Phonons D. A. Pshenai-Severin and Yu. I. Ravich pp. 1212-1216 Full Text: PDF (61 kB) Properties of GaAs Nanowhiskers Grown on a GaAs(111)B Surface Using a Combined Technique A. A. Tonkikh, G. E. Cirlin, Yu. B. Samsonenko, I. P. Soshnikov, and V. M. Ustinov pp. 1217-1220 Full Text: PDF (430 kB) AMORPHOUS, VITREOUS, AND POROUS SEMICONDUCTORS Distribution of the Density of Electronic States in the Energy Gap of Microcrystalline Hydrogenated Silicon A. G. Kazanskii and K. Yu. Khabarova pp. 1221-1224 Full Text: PDF (60 kB) PHYSICS OF SEMICONDUCTOR DEVICES Ge/Si Waveguide Photodiodes with Built-In Layers of Ge Quantum Dots for Fiber-Optic Communication Lines A. I. Yakimov, A. V. Dvurechenskii, V. V. Kirienko, N. P. Stepina, A. I. Nikiforov, V. V. Ul'yanov, S. V. Chaikovskii, V. A. Volodin, M. D. Efremov, M. S. Seksenbaev, T. S. Shamirzaev, and K. S. Zhuravlev pp. 1225-1229 Full Text: PDF (72 kB) Indium Arsenide Light-Emitting Diodes with a Cavity Formed by an Anode Contact and Semiconductor–Air Interface N. V. Zotova, N. D. Il'inskaya, S. A. Karandashev, B. A. Matveev, M. A. Remennyi, N. M. Stus', and V. V. Shustov pp. 1230-1234 Full Text: PDF (101 kB) Microwave Field-Effect Transistors Based on Group-III Nitrides S. B. Aleksandrov, D. A. Baranov, A. P. Kaidash, D. M. Krasovitskii, M. V. Pavlenko, S. I. Petrov, Yu. V. Pogorel'skii, I. A. Sokolov, M. V. Stepanov, V. P. Chalyi, N. B. Gladysheva, A. A. Dorofeev, Yu. A. Matveev, and A. A. Chernyavskii pp. 1235-1239 Full Text: PDF (60 kB)Archived web conten

    Semiconductors V. 38, I. 10

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    dc.description[en_US]Semiconductors -- October 2004 Volume 38, Issue 10, pp. 1115-1239 REVIEW Photosensitive Polymer Semiconductors E. L. Aleksandrova pp. 1115-1159 Full Text: PDF (557 kB) ATOMIC STRUCTURE AND NONELECTRONIC PROPERTIES OF SEMICONDUCTORS Determination of the Oxygen Diffusion Profile in Polycrystalline Lead Selenide Layers Using Nuclear Microanalysis A. E. Gamarts, V. M. Lebedev, V. A. Moshnikov, and D. B. Chesnokova pp. 1160-1163 Full Text: PDF (53 kB) ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS Electronic and Structural Transitions in Pb1 ��� xGexTe:Ga Alloys under Pressure E. P. Skipetrov, E. A. Zvereva, O. S. Volkova, A. V. Golubev, A. Yu. Mollaev, R. K. Arslanov, and V. E. Slyn'ko pp. 1164-1167 Full Text: PDF (57 kB) Magnetic-Field Dependences of the Conductivity and Hall Factor in MBE-Grown CdXHg1 ��� XTe Layers P. A. Bakhtin, S. A. Dvoretskii, V. S. Varavin, A. P. Korobkin, N. N. Mikhailov, and Yu. G. Sidorov pp. 1168-1171 Full Text: PDF (61 kB) Effect of Low-Temperature Annealing on Electrical Properties of n-HgCdTe P. A. Bakhtin, S. A. Dvoretskii, V. S. Varavin, A. P. Korobkin, N. N. Mikhailov, I. V. Sabinina, and Yu. G. Sidorov pp. 1172-1175 Full Text: PDF (56 kB) Formation and Study of Buried SiC Layers with a High Content of Radiation Defects E. V. Bogdanova, V. V. Kozlovski, D. S. Rumyantsev, A. A. Volkova, and A. A. Lebedev pp. 1176-1178 Full Text: PDF (85 kB) A Model of Electrical Isolation in GaN and ZnO Bombarded with Light Ions A. I. Titov, P. A. Karasev, and S. O. Kucheyev pp. 1179-1186 Full Text: PDF (98 kB) Optical and Electrical Properties of 4H-SiC Irradiated with Fast Neutrons and High-Energy Heavy Ions E. V. Kalinina, G. F. Kholuyanov, G. A. Onushkin, D. V. Davydov, A. M. Strel'chuk, A. O. Konstantinov, A. Hall�n, A. Yu. Nikiforov, V. A. Skuratov, and K. Havancsak pp. 1187-1191 Full Text: PDF (92 kB) SEMICONDUCTOR STRUCTURES, INTERFACES, AND SURFACES Fabrication and Photosensitivity of Heterojunctions Based on CuIn3Se5 Crystals I. V. Bodnar', S. E. Nikitin, G. A. Il'chuk, V. Yu. Rud', Yu. V. Rud', and M. V. Yakushev pp. 1192-1197 Full Text: PDF (107 kB) Influence of Hydrogen Sulfide on Electrical and Photoelectric Properties of Al���p-Si���SnO2:Cu���Ag Heterostructures S. V. Slobodchikov[dagger], E. V. Russu, �. V. Ivanov, Yu. G. Malinin, and Kh. M. Salikhov pp. 1198-1201 Full Text: PDF (61 kB) LOW-DIMENSIONAL SYSTEMS Suppression of Dome-Shaped Clusters During Molecular Beam Epitaxy of Ge on Si(100) A. A. Tonkikh, G. E. Cirlin, V. G. Dubrovskii, V. M. Ustinov, and P. Werner pp. 1202-1206 Full Text: PDF (387 kB) Effect of Nonradiative Recombination Centers on Photoluminescence Efficiency in Quantum Dot Structures M. V. Maksimov, D. S. Sizov, A. G. Makarov, I. N. Kayander, L. V. Asryan, A. E. Zhukov, V. M. Ustinov, N. A. Cherkashin, N. A. Bert, N. N. Ledentsov, and D. Bimberg pp. 1207-1211 Full Text: PDF (98 kB) Calculation of the Thermoelectric Figure of Merit for Multilayer Structures with Quantum Wells in the Case of Carrier Scattering by Polar Optical Phonons D. A. Pshenai-Severin and Yu. I. Ravich pp. 1212-1216 Full Text: PDF (61 kB) Properties of GaAs Nanowhiskers Grown on a GaAs(111)B Surface Using a Combined Technique A. A. Tonkikh, G. E. Cirlin, Yu. B. Samsonenko, I. P. Soshnikov, and V. M. Ustinov pp. 1217-1220 Full Text: PDF (430 kB) AMORPHOUS, VITREOUS, AND POROUS SEMICONDUCTORS Distribution of the Density of Electronic States in the Energy Gap of Microcrystalline Hydrogenated Silicon A. G. Kazanskii and K. Yu. Khabarova pp. 1221-1224 Full Text: PDF (60 kB) PHYSICS OF SEMICONDUCTOR DEVICES Ge/Si Waveguide Photodiodes with Built-In Layers of Ge Quantum Dots for Fiber-Optic Communication Lines A. I. Yakimov, A. V. Dvurechenskii, V. V. Kirienko, N. P. Stepina, A. I. Nikiforov, V. V. Ul'yanov, S. V. Chaikovskii, V. A. Volodin, M. D. Efremov, M. S. Seksenbaev, T. S. Shamirzaev, and K. S. Zhuravlev pp. 1225-1229 Full Text: PDF (72 kB) Indium Arsenide Light-Emitting Diodes with a Cavity Formed by an Anode Contact and Semiconductor���Air Interface N. V. Zotova, N. D. Il'inskaya, S. A. Karandashev, B. A. Matveev, M. A. Remennyi, N. M. Stus', and V. V. Shustov pp. 1230-1234 Full Text: PDF (101 kB) Microwave Field-Effect Transistors Based on Group-III Nitrides S. B. Aleksandrov, D. A. Baranov, A. P. Kaidash, D. M. Krasovitskii, M. V. Pavlenko, S. I. Petrov, Yu. V. Pogorel'skii, I. A. Sokolov, M. V. Stepanov, V. P. Chalyi, N. B. Gladysheva, A. A. Dorofeev, Yu. A. Matveev, and A. A. Chernyavskii pp. 1235-1239 Full Text: PDF (60 kB)dc.description.contributor[en_US]dc.description.contributor[en_US

    Semiconductors V. 35, I. 12

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