1,913,021 research outputs found
Kri͡epostnoe pravo i krestʹi͡anskai͡a reforma v proizvedenī͡iakh M.E. Saltykova /
No full text"Ocherk ėtot byl pervonachalʹno napechatan v "Sbornik͡ie pravovi͡ed͡ienī͡ia i obshchestvennykh znanīĭ". Spb., 1893 g., t. I. V nastoshchem [sic] izdanīi on n͡ieskolʹko dopolnen"--P. [3]Includes bibliographical references.Photocopy.Mode of access: Internet
Semiconductors V. 37, I. 07
No full textSemiconductors -- July 2003
Volume 37, Issue 7, pp. 741-865
CONFERENCE. REVIEW
III International Conference on Amorphous and Microcrystalline Semiconductors (July 2–4, 2002)
E. I. Terukov (the Chairperson of Organizing Committee of the Conference)
pp. 741-743 Full Text: PDF (28 kB)
CONFERENCE. ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS
Electron Diffraction Investigation of Structural Diversity of Amorphous Films of Polymorphic TlInS2
D. I. Ismailov, M. V. Alieva, E. Sh. Alekperov, and F. I. Aliev
pp. 744-747 Full Text: PDF (72 kB)
The Influence of a High and Low Content of Au Impurity on the Photoluminescence of Stoichiometric and Nonstoichiometric Arsenic Sulfide
A. A. Babaev, I. K. Kamilov, Z. V. Vagabova, S. M. Sultanov, A. M. Askhabov, E. I. Terukov, and I. N. Trapeznikova
pp. 748-750 Full Text: PDF (43 kB)
Spectra of Fundamental Optical Functions of BeSe
V. Val. Sobolev and V. V. Sobolev
pp. 751-756 Full Text: PDF (70 kB)
Optical Properties of Imperfect In2Se3
V. Val. Sobolev and V. V. Sobolev
pp. 757-762 Full Text: PDF (71 kB)
CONFERENCE. SEMICONDUCTOR STRUCTURES, INTERFACES, AND SURFACES
Spectral Photosensitivity of a-SiGe:H/c-Si Heterostructures
A. A. Sherchenkov
pp. 763-765 Full Text: PDF (41 kB)
CONFERENCE. AMORPHOUS, VITREOUS, AND POROUS SEMICONDUCTORS
Photoinduced Conductivity Change in Erbium-Doped Amorphous Hydrogenated Silicon Films
A. G. Kazanskii, H. Mell, E. I. Terukov, and P. A. Forsh
pp. 766-768 Full Text: PDF (47 kB)
On Studying Nanoporous-Carbon-Based Composites by Small-Angle X-Ray Scattering
É. A. Smorgonskaya
pp. 769-774 Full Text: PDF (99 kB)
Fullerene Single Crystals as Adsorbents of Organic Compounds
V. I. Berezkin, I. V. Viktorovskii, A. Ya. Vul', L. V. Golubev, V. N. Petrova, and L. O. Khoroshko
pp. 775-783 Full Text: PDF (92 kB)
X-Raying Studies of the Nanoporous Carbon Structure Produced from Carbide Materials
R. N. Kyutt, A. M. Danishevskii, É. A. Smorgonskaya, and S. K. Gordeev
pp. 784-788 Full Text: PDF (65 kB)
The Influence of Deposition Conditions and Alloying on the Electronic Properties of Amorphous Selenium
S. O. Kasap, K. V. Koughia, B. Fogal, G. Belev, and R. E. Johanson
pp. 789-794 Full Text: PDF (75 kB)
Synthesis and Physical Properties of Si(Ge)–Se–Te Glasses
L. A. Kulakova, B. T. Melekh, V. I. Bakharev, and V. Kh. Kudoyarova
pp. 795-799 Full Text: PDF (70 kB)
Effect of Rare-Earth Impurities on the Photoluminescence of Ge2S3 Glass
A. A. Babaev, I. K. Kamilov, Z. V. Vagabova, S. M. Sultanov, A. M. Askhabov, E. I. Terukov, and I. N. Trapeznikova
pp. 800-802 Full Text: PDF (50 kB)
Influence of the Order–Disorder Transition in the Crystal Electron Subsystem on the Electron Density at Lattice Sites
N. P. Seregin, T. R. Stepanova, Yu. V. Kozhanova, V. P. Volkov, P. P. Seregin, and N. N. Troitskaya
pp. 803-806 Full Text: PDF (64 kB)
Organic Materials for Photovoltaic and Light-Emitting Devices
T. A. Yourre, L. I. Rudaya, N. V. Klimova, and V. V. Shamanin
pp. 807-815 Full Text: PDF (113 kB)
Optical and Electrical Properties of Polyamide Acid and Metal–Polymer Complex Based on Terbium
É. A. Lebedev, M. Ya. Goikhman, M. E. Kompan, V. Kh. Kudoyarova, I. V. Podeshvo, E. I. Terukov, and V. V. Kudryavtsev
pp. 816-817 Full Text: PDF (38 kB)
Photosensitivity of New Photoconductive Polymers Based on Ruthenium–Biquinolyl Complexes
E. L. Aleksandrova, M. Ya. Goikhman, I. V. Podeshvo, I. V. Gofman, and V. V. Kudryavtsev
pp. 818-820 Full Text: PDF (52 kB)
Optical and Photosensitive Properties of Comb-Shaped Polyamide-Imides
E. L. Aleksandrova, M. Ya. Goikhman, L. I. Subbotina, K. A. Romashkova, I. F. Gofman, V. V. Kudryavtsev, and A. V. Yakimanskii
pp. 821-824 Full Text: PDF (54 kB)
A Study of the Effect of Oxygen on the Intensity of Erbium Photoluminescence in Amorphous SiOx:(H, Er) Films Formed by DC Magnetron Sputtering
Yu. K. Undalov, E. I. Terukov, O. B. Gusev, and V. Kh. Kudoyarova
pp. 825-831 Full Text: PDF (90 kB)
CONFERENCE. PHYSICS OF SEMICONDUCTOR DEVICES
Splitting of Resonant Optical Modes in Fabry–Perot Microcavities
V. G. Golubev, A. A. Dukin, A. V. Medvedev, A. B. Pevtsov, A. V. Sel'kin, and N. A. Feoktistov
pp. 832-837 Full Text: PDF (89 kB)
ATOMIC STRUCTURE AND NONELECTRONIC PROPERTIES OF SEMICONDUCTORS
The Use of Magnesium to Dope Gallium Nitride Obtained by Molecular-Beam Epitaxy from Activated Nitrogen
A. A. Vorob'ev, V. V. Korablev, and S. Yu. Karpov
pp. 838-842 Full Text: PDF (67 kB)
Simulation of Growth Kinetics of Octahedral and Platelike Oxygen Precipitates in Silicon
V. V. Svetukhin, A. G. Grishin, and O. V. Prikhod'ko
pp. 843-845 Full Text: PDF (41 kB)
ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS
Special Features of Electron Spin Resonance in 4H-SiC in the Vicinity of the Insulator–Metal Phase Transition: I. Effects of Spin Interaction
A. I. Veinger, A. G. Zabrodskii, T. V. Tisnek, and E. N. Mokhov
pp. 846-854 Full Text: PDF (106 kB)
Theoretical and Experimental Study of the Effect of InAs Growth Rate on the Properties of QD Arrays in InAs/GaAs System
V. G. Dubrovskii, V. A. Egorov, G. E. Cirlin, N. K. Polyakov, Yu. B. Samsonenko, N. V. Kryzhanovskaya, A. F. Tsatsul'nikov, and V. M. Ustinov
pp. 855-860 Full Text: PDF (76 kB)
LOW-DIMENSIONAL SYSTEMS
Control over the Parameters of InAs–GaAs Quantum Dot Arrays in the Stranski–Krastanow Growth Mode
N. A. Cherkashin, M. V. Maksimov, A. G. Makarov, V. A. Shchukin, V. M. Ustinov, N. V. Lukovskaya, Yu. G. Musikhin, G. E. Cirlin, N. A. Bert, Zh. I. Alferov, N. N. Ledentsov, and D. Bimberg
pp. 861-865 Full Text: PDF (131 kB)Archived web conten
Semiconductors V. 37, I. 11
No full textSemiconductors -- November 2003
Volume 37, Issue 11, pp. 1243-1362
ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS
Electronic Structure of Cubic Silicon Carbide with Substitutional 3d Impurities at Si and C Sites
N. I. Medvedeva, E. I. Yur'eva, and A. L. Ivanovskii
pp. 1243-1246 Full Text: PDF (63 kB)
Optical and Thermal Properties of CuAlxIn1 – xTe2 Solid Solutions
I. V. Bodnar'
pp. 1247-1251 Full Text: PDF (73 kB)
Defect-Related Luminescence of GaN:Zn Films Thermally Treated in a Radio-Frequency Ammonia Plasma
G. A. Sukach, V. V. Kidalov, A. I. Vlasenko, and E. P. Potapenko
pp. 1252-1256 Full Text: PDF (63 kB)
Effective Electron Mass in a MnxHg1 – xTe System
I. M. Nesmelova
pp. 1257-1258 Full Text: PDF (29 kB)
Effect of Grain Boundaries on the Properties of Cadmium Telluride Grown under Nonequilibrium Conditions
V. V. Ushakov and Yu. V. Klevkov
pp. 1259-1263 Full Text: PDF (295 kB)
Ultraviolet Luminescence of Thin GaN Films Grown by Radical-Beam Gettering Epitaxy on Porous GaAs(111) Substrates
V. V. Kidalov, G. A. Sukach, A. S. Revenko, and E. P. Potapenko
pp. 1264-1265 Full Text: PDF (30 kB)
Hopping Polarization Photoconductivity of Silicon with the Involvement of Impurity Pairs of Groups III and V
Ya. E. Pokrovskii and N. A. Khval'kovskii
pp. 1266-1274 Full Text: PDF (133 kB)
Defect Formation in PbTe under the Action of a Laser Shock Wave
V. S. Yakovyna, D. M. Zayachuk, and N. N. Berchenko
pp. 1275-1277 Full Text: PDF (42 kB)
Galvanomagnetic Effects in Atomic-Disordered HgSe1 – xSx Compounds
A. E. Kar'kin, V. V. Shchennikov, S. E. Danilov, V. A. Arbuzov, and B. N. Goshchitskii
pp. 1278-1282 Full Text: PDF (74 kB)
SEMICONDUCTOR STRUCTURES, INTERFACES, AND SURFACES
Photosensitive Structure on CdGa2S4 Single Crystals
V. Yu. Rud', Yu. V. Rud', A. A. Vaipolin, I. V. Bodnar', and N. Fernelius
pp. 1283-1290 Full Text: PDF (115 kB)
Photoelectric Phenomena in ZnO:Al–p-Si Heterostructures
S. E. Nikitin, Yu. A. Nikolaev, I. K. Polushina, V. Yu. Rud', Yu. V. Rud', and E. I. Terukov
pp. 1291-1295 Full Text: PDF (77 kB)
The Thermoelectric Power of a Semiconductor p–n Heterojunction
M. M. Gadzhialiev and Z. Sh. Pirmagomedov
pp. 1296-1298 Full Text: PDF (45 kB)
On the Influence of a Si Single-Crystal Real Surface on the Low-Frequency Internal Friction and the Behavior of an Effective Shear Modulus
A. V. Oleinich-Lysyuk, N. P. Beshley, and I. M. Fodchuk
pp. 1299-1302 Full Text: PDF (55 kB)
Charge Fluctuations at the Bonding Interface in the Silicon-on-Insulator Structures
I. V. Antonova, V. A. Stuchinskii, O. V. Naumova, D. V. Nikolaev, and V. P. Popov
pp. 1303-1307 Full Text: PDF (69 kB)
Photosensitive Structures Based on In2S3 Crystals
I. V. Bodnar', V. A. Polubok, V. Yu. Rud', and Yu. V. Rud'
pp. 1308-1310 Full Text: PDF (50 kB)
Kinetics of the Initial Stage in Chalcogenide Passivation of III–V Semiconductors
V. F. Antyushin, A. V. Budanov, D. S. Kukharenko, and D. A. Palishkin
pp. 1311-1314 Full Text: PDF (51 kB)
LOW-DIMENSIONAL SYSTEMS
Pulsed-Laser Modification of Germanium Nanoclusters in Silicon
V. A. Volodin, E. I. Gatskevich, A. V. Dvurechenskii, M. D. Efremov, G. D. Ivlev, A. I. Nikiforov, D. A. Orekhov, and A. I. Yakimov
pp. 1315-1320 Full Text: PDF (80 kB)
Photoluminescence from Cadmium Sulfide Nanoclusters Formed in the Matrix of a Langmuir–Blodgett Film
E. A. Bagaev, K. S. Zhuravlev, L. L. Sveshnikova, I. A. Badmaeva, S. M. Repinskii, and M. Voelskow
pp. 1321-1325 Full Text: PDF (73 kB)
Optical Properties of MBE-Grown Ultrathin GaAsN Insertions in GaAs Matrix
N. V. Kryzhanovskaya, A. G. Gladyshev, A. R. Kovsh, I. P. Soshnikov, A. F. Tsatsul'nikov, H. Kirmse, W. Neumann, J. Y. Chi, J. S. Wang, L. Wei, N. N. Ledentsov, and V. M. Ustinov
pp. 1326-1330 Full Text: PDF (107 kB)
Spontaneous Formation of the Periodic Composition-Modulated Nanostructure in CdxHg1 – xTe Films
P. A. Bakhtin, V. S. Varavin, S. A. Dvoretskii, A. F. Kravchenko, A. V. Latyshev, N. N. Mikchailov, I. V. Sabinina, Yu. G. Sidorov, and M. V. Yakushev
pp. 1331-1335 Full Text: PDF (132 kB)
Excitonic Recombination near the Mobility Edge in CdSe/ZnSe Nanostructures
M. Ya. Valakh, M. P. Lisitsa, V. V. Strelchuk, M. V. Vuychik, S. V. Ivanov, A. A. Toropov, T. V. Shubina, and P. S. Kop'ev
pp. 1336-1341 Full Text: PDF (81 kB)
AMORPHOUS, VITREOUS, AND POROUS SEMICONDUCTORS
Extremal Dependence of the Concentration of Paramagnetic Centers Related to Dangling Bonds in Si on Ion-Irradiation Dose as Evidence of Nanostructuring
D. I. Tetelbaum, A. A. Ezhevskii, and A. N. Mikhaylov
pp. 1342-1344 Full Text: PDF (45 kB)
PHYSICS OF SEMICONDUCTOR DEVICES
Ge/Si Photodiodes with Embedded Arrays of Ge Quantum Dots for the Near Infrared (1.3–1.5 µm) Region
A. I. Yakimov, A. V. Dvurechenskii, A. I. Nikiforov, S. V. Chaikovskii, and S. A. Tiis
pp. 1345-1349 Full Text: PDF (185 kB)
Thermoelements with Side Heat Exchange
A. A. Ashcheulov, V. G. Okhrem, and E. A. Okhrem
pp. 1350-1355 Full Text: PDF (74 kB)
1.7–1.8 µm Diode Lasers Based on Quantum-Well InGaAsP/InP Heterostructures
A. V. Lyutetskii, N. A. Pikhtin, S. O. Slipchenko, Z. N. Sokolova, N. V. Fetisova, A. Yu. Leshko, V. V. Shamakhov, A. Yu. Andreev, E. G. Golikova, Yu. A. Ryaboshtan, and I. S. Tarasov
pp. 1356-1362 Full Text: PDF (99 kB)Archived web conten
Semiconductors V. 33, I. 06
No full textSemiconductors -- June 1999
Volume 33, Issue 6, pp. 595-705
PUBLICATION OF THE SEMINAR PROCEEDINGS IS DEDICATED TO THE MEMORY OF V. F MASTEROV INTAS–RFBR Seminar on Rare-Earth Impurities in Semiconductors and Low-Dimensional Semiconductor Structures, St. Petersburg State Technical University, October 26, 1998 OPENING ADDRESS
B. P. Zakharchenya
Full Text: PDF (22 kB)
Erbium-doped silicon epilayers grown by liquid-phase epitaxy
S. Binetti, S. Pizzini, A. Cavallini, and B. Fraboni
Full Text: PDF (51 kB)
Photoluminescence of erbium-doped silicon: excitation power dependence
C. A. J. Ammerlaan, D. T. X. Thao, T. Gregorkiewicz, and N. A. Sobolev
Full Text: PDF (94 kB)
Impurity centers in silicon doped with rare-earth impurities of dysprosium, holmium, erbium, and ytterbium
V. V. Emtsev, V. V. Emtsev, Jr., D. S. Poloskin, N. A. Sobolev, E. I. Shek, J. Michel, and L. C. Kimerling
Full Text: PDF (57 kB)
Redistribution of erbium during the crystallization of buried amorphous silicon layers
O. V. Aleksandrov, Yu. A. Nikolaev, N. A. Sobolev, V. I. Sakharov, I. T. Serenkov, and Yu. A. Kudryavtsev
Full Text: PDF (71 kB)
Influence of intrinsic point defects on the formation of structural defects and optically active centers during the annealing of erbium- and dysprosium-implanted silicon
N. A. Sobolev, E. I. Shek, A. M. Emel'yanov, V. I. Vdovin, and T. G. Yugova
Full Text: PDF (58 kB)
Influence of the orientation of the silicon substrate on the properties of avalanche Si:Er:O light-emitting structures
N. A. Sobolev, Yu. A. Nikolaev, A. M. Emel'yanov, and V. I. Vdovin
Full Text: PDF (75 kB)
Mechanisms of excitation of the f – f emission in silicon codoped with erbium and oxygen
V. F. Masterov and L. G. Gerchikov
Full Text: PDF (140 kB)
Mechanism of erbium electroluminescence in hydrogenated amorphous silicon
M. S. Bresler, O. B. Gusev, P. E. Pak, E. I. Terukov, K. D. Tséndin, and I. N. Yassievich
Full Text: PDF (49 kB)
Effect of annealing on the optical and structural properties of GaN:Er
N. A. Sobolev, V. V. Lundin, V. I. Sakharov, I. T. Serenkov, A. S. Usikov, and A. M. Emel'yanov
Full Text: PDF (52 kB)
Optical activity of Yb in GaAs and low-dimensional GaAs/GaAlAs structures
A. A. Gippius, V. M. Konnov, V. A. Dravin, N. N. Loiko, I. P. Kazakov, and V. V. Ushakov
Full Text: PDF (59 kB)
ATOMIC STRUCTURE AND NON-ELECTRONIC PROPERTIES OF SEMICONDUCTORS
Photothermoacoustic and photoelectric microscopy of silicon
R. M. Burbelo, A. G. Kuz'mich, and I. Ya. Kucherov
Full Text: PDF (1839 kB)
Radiation-thermal activation of silicon implanted in gallium arsenide
V. M. Ardyshev and A. P. Surzhikov
Full Text: PDF (83 kB)
ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS
Photoionization of short-range acceptor states in uniaxially deformed semiconductors
A. A. Abramov, V. N. Tulupenko, V. T. Vas'ko, and D. A. Firsov
Full Text: PDF (132 kB)
Electric and luminescence properties of GaAs–AIIBIVC2V single crystals
I. K. Polushina, Yu. V. Rud', and V. Yu. Rud'
Full Text: PDF (84 kB)
Reciprocal drag of electrons and phonons in strongly doped HgFeSe semiconductors
I. I. Lyapilin and Kh. M. Bikkin
Full Text: PDF (148 kB)
SEMICONDUCTORS STRUCTURES,INTERFACES,AND SURFACES
Scanning tunneling microscopy investigation of the microtopography of SiO2 and Si surfaces at the Si/SiO2 interface in SIMOX structures
D. V. Vyalykh and S. I. Fedoseenko
Full Text: PDF (454 kB)
Reconstruction and electron states of a Ga2Se3–GaAsheterointerface
B. L. Agapov, N. N. Bezryadin, G. I. Kotov, M. P. Sumets, and I. N. Arsent'ev
Full Text: PDF (199 kB)
Sulfide passivation of GaAs power diodes
V. M. Botnaryuk, Yu. V. Zhilyaev, and E. V. Konenkova
Full Text: PDF (63 kB)
Electron states in the surface region of gallium arsenide treated in selenium and arsenic vapor
N. N. Bezryadin, É. P. Domashevskaya, G. I. Kotov, R. V. Kuz'menko, M. P. Sumets, and I. N. Arsent'ev
Full Text: PDF (176 kB)
Deep-level recombination spectroscopy in GaP light-emitting diodes
S. V. Bulyarskii, M. O. Vorob'ev, N. S. Grushko, and A. V. Lakalin
Full Text: PDF (93 kB)
Influence of temperature on the spectral composition of the breakdown electroluminescence of silicon carbide p-n structures
M. V. Belous, A. M. Genkin, and V. K. Genkina
Full Text: PDF (106 kB)
LOW-DIMENSIONAL SYSTEMS
Self-organization of quantum dots in multilayer InAs/GaAs and InGaAs/GaAs structures in submonolayer epitaxy
G. É. Tsyrlin, V. N. Petrov, S. A. Masalov, and A. O. Golubok
Full Text: PDF (729 kB)
Dimensionality effects in the hot-electron photoluminescence of gallium arsenide: 2D–quasi-3D transition
V. F. Sapega, V. I. Perel', D. N. Mirlin, I. A. Akimov, T. Ruf, M. Cardona, W. Winter, and K. Eberl
Full Text: PDF (71 kB)
AMORPHOUS,GLASSY,AND POROUS SEMICONDUCTORS
Effect of substrate material on the rate of growth and the optical parameters of a-C : H layers
T. K. Zvonareva and L. V. Sharonova
Full Text: PDF (96 kB)
PHYSICS OF SEMICONDUCTOR DEVICES
Photosensitivity of GaAlAs/GaAs heterophotoelements in linearly polarized light
V. Yu. Rud', Yu. V. Rud', and V. P. Khvostikov
Full Text: PDF (107 kB)
Increasing the power of broad-waveguide lasers by additional selection of transverse modes
I. A. Kostko, V. P. Evtikhiev, E. Yu. Kotel'nikov, and G. G. Zegrya
Full Text: PDF (215 kB)
Gain and internal losses in InGaAsSb/InAsSbP double-heterostructure lasers
M. Aidaraliev, N. V. Zotova, S. A. Karandashev, B. A. Matveev, M. A. Remennyi, N. M. Stus', and G. N. Talalakin
Full Text: PDF (107 kB)
PERSONALIA
In Memory of Vadim Fedorovich Masterov
Full Text: PDF (147 kB)Archived web conten
Semiconductors V. 39, I. 07
No full textdc.description[en_US]Semiconductors -- July 2005
Volume 39, Issue 7, pp. 735-860
ATOMIC STRUCTURE AND NONELECTRONIC PROPERTIES OF SEMICONDUCTORS
Nature of a Temperature Hysteresis of Effective Shear Modulus in Single-Crystal Silicon
A. V. Oleinich-Lysyuk, B. I. Gutsulyak, and I. M. Fodchuk
pp. 735-737 Full Text: PDF (54 kB)
Phonon Scattering, Thermoelectric Power, and Thermal Conductivity Control in a Semiconductor���Metal Eutectic Composition
G. I. Isakov
pp. 738-741 Full Text: PDF (57 kB)
The Influence of Oxygen on the Formation of Donor Centers in Silicon Layers Implanted with Erbium and Oxygen Ions
O. V. Aleksandrov, A. O. Zakhar'in, and N. A. Sobolev
pp. 742-747 Full Text: PDF (80 kB)
Stresses in Selectively Oxidized GaAs/(AlGa)xOy Structures
S. A. Blokhin, A. N. Smirnov, A. V. Sakharov, A. G. Gladyshev, N. V. Kryzhanovskaya, N. A. Maleev, A. E. Zhukov, E. S. Semenova, D. A. Bedarev, E. V. Nikitina, M. M. Kulagina, M. V. Maksimov, N. N. Ledentsov, and V. M. Ustinov
pp. 748-753 Full Text: PDF (175 kB)
ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS
Low-Temperature Instabilities of the Electrical Properties of Cd0.96Zn0.04Te:Cl Semi-insulating Crystals
A. V. Savitskii, O. A. Parfenyuk, M. I. Ilashchuk, K. S. Ulyanitskii, S. N. Chupyra, and N. D. Vakhnyak
pp. 754-758 Full Text: PDF (79 kB)
Polarized Infrared and Raman Spectroscopy Studies of the Liquid Crystal E7 Alignment in Composites Based on Grooved Silicon
E. V. Astrova, T. S. Perova, S. A. Grudinkin, V. A. Tolmachev, Yu. A. Pilyugina, V. B. Voronkov, and J. K. Vij
pp. 759-767 Full Text: PDF (294 kB)
Hydrogen-Containing Donors in Silicon: Centers with Negative Effective Correlation Energy
Yu. M. Pokotilo, A. N. Petukh, V. V. Litvinov, and V. G. Tsvyrko
pp. 768-771 Full Text: PDF (59 kB)
Weak Ferromagnetism in InSe:Mn Layered Crystals
V. V. Slyn'ko, A. G. Khandozhko, Z. D. Kovalyuk, A. V. Zaslonkin, V. E. Slyn'ko, M. Arciszewska, and W. D. Dobrowolski
pp. 772-776 Full Text: PDF (71 kB)
Dispersion of the Refractive Index in Tl1 ��� xCuxGaSe2 (0 <= x <= 0.02) and Tl1 ��� xCuxInS2 (0 <= x <= 0.015) Crystals
A. N. Georgobiani, A. Kh. Matiev, and B. M. Khamkhoev
pp. 777-779 Full Text: PDF (42 kB)
The Effect of Neutron Irradiation on the Properties of n-InSb Whisker Microcrystals
I. A. Bolshakova, V. M. Boiko, V. N. Brudnyi, I. V. Kamenskaya, N. G. Kolin, E. Yu. Makido, T. A. Moskovets, and D. I. Merkurisov
pp. 780-785 Full Text: PDF (86 kB)
The Electrooptic Effect and Anisotropy of the Refractive Index in Tl1 ��� xCuxGaSe2 (0 <= x <= 0.02) Crystals
A. N. Georgobiani, A. Kh. Matiev, and B. M. Khamkhoev
pp. 786-788 Full Text: PDF (49 kB)
Stimulation of Negative Magnetoresistance by an Electric Field and Light in Silicon Doped with Boron and Manganese
M. K. Bakhadyrkhanov, O. �. Sattarov, Kh. M. Iliev, K. S. Ayupov, and Tu�rdi Umaier
pp. 789-791 Full Text: PDF (51 kB)
SEMICONDUCTOR STRUCTURES, INTERFACES, AND SURFACES
Specific Features of the Physical Properties of a Modified CdTe Surface
V. P. Makhniy
pp. 792-794 Full Text: PDF (100 kB)
The Effects of Interface States on the Capacitance and Electroluminescence Efficiency of InGaN/GaN Light-Emitting Diodes
N. I. Bochkareva, E. A. Zhirnov, A. A. Efremov, Yu. T. Rebane, R. I. Gorbunov, A. V. Klochkov, D. A. Lavrinovich, and Yu. G. Shreter
pp. 795-799 Full Text: PDF (75 kB)
The Properties of Structures Based on Oxidized Porous Silicon under the Effect of Illumination and a Gas Environment
D. I. Bilenko, O. Ya. Belobrovaya, �. A. Zharkova, D. V. Terin, and E. I. Khasina
pp. 800-804 Full Text: PDF (74 kB)
LOW-DIMENSIONAL SYSTEMS
Optical Transitions in a Quantized Cylindrical Layer in the Presence of a Homogeneous Electric Field
V. A. Arutyunyan, S. L. Arutyunyan, G. O. Demirchyan, and G. Sh. Petrosyan
pp. 805-810 Full Text: PDF (73 kB)
Nonohmic Quasi-2D Hopping Conductance and the Kinetics of Its Relaxation
B. A. Aronzon, D. Yu. Kovalev, and V. V. Ryl'kov
pp. 811-819 Full Text: PDF (130 kB)
The Transition from Thermodynamically to Kinetically Controlled Formation of Quantum Dots in an InAs/GaAs(100) System
Yu. G. Musikhin, G. E. Cirlin, V. G. Dubrovskii, Yu. B. Samsonenko, A. A. Tonkikh, N. A. Bert, and V. M. Ustinov
pp. 820-825 Full Text: PDF (131 kB)
Resonance Modulation of Electron���Electron Relaxation by a Quantizing Magnetic Field
V. I. Kadushkin
pp. 826-829 Full Text: PDF (62 kB)
AMORPHOUS, VITREOUS, AND POROUS SEMICONDUCTORS
A Study of the Local Electronic and Atomic Structure in a-SixC1 ��� x Amorphous Alloys Using Ultrasoft X-ray Emission Spectroscopy
V. A. Terekhov, E. I. Terukov, I. N. Trapeznikova, V. M. Kashkarov, O. V. Kurilo, S. Yu. Turishchev, A. B. Golodenko, and �. P. Domashevskaya
pp. 830-834 Full Text: PDF (79 kB)
Optical and Electrical Properties of Thin Wafers Fabricated from Nanocrystalline Silicon Powder
N. N. Kononov, G. P. Kuz'min, A. N. Orlov, A. A. Surkov, and O. V. Tikhonevich
pp. 835-839 Full Text: PDF (77 kB)
Magnetic Properties of Iron-Modified Amorphous Carbon
S. G. Yastrebov, V. I. Ivanov-Omskii, V. Pop, C. Morosanu, A. Slav, and J. Voiron
pp. 840-844 Full Text: PDF (73 kB)
Photosensitive Properties and a Mechanism for Photogeneration of Charge Carriers in Polymeric Layers Containing Organometallic Complexes
E. L. Aleksandrova, M. Ya. Goikhman, I. V. Podeshvo, and V. V. Kudryavtsev
pp. 845-850 Full Text: PDF (85 kB)
PHYSICS OF SEMICONDUCTOR DEVICES
High-Power Flip���Chip Blue Light-Emitting Diodes Based on AlGaInN
D. A. Zakheim, I. P. Smirnova, I. V. Roznanskii, S. A. Gurevich, M. M. Kulagina, E. M. Arakcheeva, G. A. Onushkin, A. L. Zakheim, E. D. Vasil'eva, and G. V. Itkinson
pp. 851-855 Full Text: PDF (96 kB)
A Ferroelectric Field Effect Transistor Based on a Pb(ZrxTi1 ��� x)O3/SnO2 Heterostructure
I. E. Titkov, I. P. Pronin, D. V. Mashovets, L. A. Delimova, I. A. Liniichuk, and I. V. Grekhov
pp. 856-860 Full Text: PDF (153 kB)dc.description.contributor[en_US]dc.description.contributor[en_US
Semiconductors V. 35, I. 11
No full textdc.description[en_US]Semiconductors -- November 2001
Volume 35, Issue 11, pp. 1223-1346
ATOMIC STRUCTURE AND NONELECTRONIC PROPERTIES OF SEMICONDUCTORS
Physical Foundations of Metastable Impurity Center Reconstruction in Semiconductors
D. E. Onopko and A. I. Ryskin
pp. 1223-1230 Full Text: PDF (86 kB)
A Model of High- and Low-Temperature Phosphorus Diffusion in Silicon by a Dual Pair Mechanism
O. V. Aleksandrov
pp. 1231-1241 Full Text: PDF (123 kB)
ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS
The Impurity Optical Absorption and Conduction Band Structure in 6H-SiC
I. S. Gorban'[dagger] and A. P. Krokhmal'
pp. 1242-1248 Full Text: PDF (100 kB)
Magnetic Properties of Pb1 ��� xGexTe Alloys Doped with Ytterbium
E. P. Skipetrov, N. A. Chernova, L. A. Skipetrova, A. V. Golubev, and E. I. Slyn'ko
pp. 1249-1251 Full Text: PDF (47 kB)
On the Charge Transport Mechanism in n-InSb Films
Yu. A. Nikol'skii
pp. 1252-1253 Full Text: PDF (41 kB)
Effect of Bismuth Impurity on Carrier Density in PbSe:Bi:Se Epitaxial Layers
V. A. Zykov, T. A. Gavrikova, V. I. Il'in, S. A. Nemov, and P. V. Savintsev
pp. 1254-1258 Full Text: PDF (60 kB)
Photoelectric Phenomena in (��cxa1 ��� x)-Si:H/c-Si Heterostructures
H. Mell, Yu. A. Nikolaev, V. Yu. Rud', Yu. V. Rud', and E. I. Terukov
pp. 1259-1262 Full Text: PDF (69 kB)
A Pulsed Synthesis of beta-FeSi2 Layers on Silicon Implanted with Fe+ Ions
R. I. Batalov, R. M. Bayazitov, E. I. Terukov, V. Kh. Kudoyarova, G. Weiser, and H. Kuehne
pp. 1263-1269 Full Text: PDF (88 kB)
SEMICONDUCTOR STRUCTURES, INTERFACES, AND SURFACES
Generation���Recombination and Diffusion Currents in HgMnTe n+���p Junctions
L. A. Kosyachenko, A. V. Markov, S. �. Ostapov, and I. M. Rarenko
pp. 1270-1278 Full Text: PDF (119 kB)
Effect of Surface Orientation of CdxHg1 ��� xTe Crystals on the Properties of Surface Anodic Oxides
V. G. Sredin, Yu. S. Mezin, and V. M. Ukrozhenko
pp. 1279-1281 Full Text: PDF (50 kB)
Photosensitivity of a - C:H/c -Si Heterojunctions
V. G. Baryshnikov, Yu. A. Nikolaev, V. Yu. Rud', Yu. V. Rud', and E. I. Terukov
pp. 1282-1284 Full Text: PDF (55 kB)
Reverse Current in Graded-Gap p���n Structure with Nonmonotonic Coordinate Dependence of the Band Gap
B. S. Sokolovskii
pp. 1285-1290 Full Text: PDF (85 kB)
Role of Sulfide Ion Solvation in the Modification of GaAs Surface Electronic Structure
M. V. Lebedev
pp. 1291-1299 Full Text: PDF (103 kB)
LOW-DIMENSIONAL SYSTEMS
Analogue of Gunn Effect in Tunneling between Quantum Wells with Different Mobilities
P. I. Biryulin, A. A. Gorbatsevich, V. V. Kapaev, Yu. V. Kopaev, and V. T. Trofimov
pp. 1300-1304 Full Text: PDF (70 kB)
Electron Nonelastic Scattering by Confined and Interface Polar Optical Phonons in a Modulation-Doped AlGaAs/GaAs/AlGaAs Quantum Well
K. Pozela
pp. 1305-1308 Full Text: PDF (54 kB)
Electrical Characteristics of Single-Gate Interference Transistors Based on Various Semiconductor Materials
I. I. Abramov and A. I. Rahachou
pp. 1309-1313 Full Text: PDF (66 kB)
Medium-Range Order and Optoelectronic Properties of a Tetrahedrally Coordinated Hydrogenated Amorphous Semiconductor
O. A. Golikova
pp. 1314-1319 Full Text: PDF (72 kB)
Structural and Photonic Properties of Opal���GaN Nanocomposites
V. G. Golubev, D. A. Kurdyukov, A. V. Medvedev, A. B. Pevtsov, L. M. Sorokin, and J. L. Hutchison
pp. 1320-1323 Full Text: PDF (291 kB)
PHYSICS OF SEMICONDUCTOR DEVICES
MOCVD-Grown Broad Area InGaAs/GaAs/InGaP Laser Diodes
D. A. Vinokurov, V. A. Kapitonov, D. N. Nikolaev, A. L. Stankevich, A. V. Lyutetskii, N. A. Pikhtin, S. O. Slipchenko, Z. N. Sokolova, N. V. Fetisova, I. N. Arsent'ev, and I. S. Tarasov
pp. 1324-1328 Full Text: PDF (235 kB)
Photoluminescence Properties of Polycrystalline ZnO/CdS/CuInGaSe2 Solar Cells at a Low Temperature
G. A. Medvedkin, E. I. Terukov, K. Sato, Yu. Hasegava, and K. Hirose
pp. 1329-1334 Full Text: PDF (75 kB)
Simulation of Current���Voltage Characteristics of a Ferroelectric Field-Effect Transistor
L. S. Berman
pp. 1335-1339 Full Text: PDF (67 kB)
Improved Degradation Stability of Blue���Green II���VI Light-Emitting Diodes with Excluded Nitrogen-Doped ZnSe-Based Layers
N. Yu. Gordeev, S. V. Ivanov, V. I. Kopchatov, I. I. Novikov, T. V. Shubina, N. D. Il'inskaya, P. S. Kop'ev, G. Reuscher, A. Waag, and G. Landwehr
pp. 1340-1344 Full Text: PDF (75 kB)
PERSONALIA
In Memory of Aleksei Petrovich Shotov
Zh. I. Alferov, V. S. Bagaev, B. A. Volkov, A. A. Gippius, A. I. Golovashkin, S. P. Grishechkina, A. I. Demeshina, I. I. Zasavitskii, A. I. Isakov, L. V. Keldysh, Yu. V. Kopaev, B. D. Kopylovskii, O. N. Krokhin, A. I. Nadezhdinskii, I. G. Neizvestnyi, N. A. Penin, Yu. M. Popov, N. N. Sibel'din, V. I. Stafeev, V. A. Chuenkov, V. V. Shestakov, and A. �. Yunovich
pp. 1345-1346 Full Text: PDF (23 kB)dc.description.contributor[en_US]dc.description.contributor[en_US
Semiconductors V. 39, I. 07
No full textSemiconductors -- July 2005
Volume 39, Issue 7, pp. 735-860
ATOMIC STRUCTURE AND NONELECTRONIC PROPERTIES OF SEMICONDUCTORS
Nature of a Temperature Hysteresis of Effective Shear Modulus in Single-Crystal Silicon
A. V. Oleinich-Lysyuk, B. I. Gutsulyak, and I. M. Fodchuk
pp. 735-737 Full Text: PDF (54 kB)
Phonon Scattering, Thermoelectric Power, and Thermal Conductivity Control in a Semiconductor–Metal Eutectic Composition
G. I. Isakov
pp. 738-741 Full Text: PDF (57 kB)
The Influence of Oxygen on the Formation of Donor Centers in Silicon Layers Implanted with Erbium and Oxygen Ions
O. V. Aleksandrov, A. O. Zakhar'in, and N. A. Sobolev
pp. 742-747 Full Text: PDF (80 kB)
Stresses in Selectively Oxidized GaAs/(AlGa)xOy Structures
S. A. Blokhin, A. N. Smirnov, A. V. Sakharov, A. G. Gladyshev, N. V. Kryzhanovskaya, N. A. Maleev, A. E. Zhukov, E. S. Semenova, D. A. Bedarev, E. V. Nikitina, M. M. Kulagina, M. V. Maksimov, N. N. Ledentsov, and V. M. Ustinov
pp. 748-753 Full Text: PDF (175 kB)
ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS
Low-Temperature Instabilities of the Electrical Properties of Cd0.96Zn0.04Te:Cl Semi-insulating Crystals
A. V. Savitskii, O. A. Parfenyuk, M. I. Ilashchuk, K. S. Ulyanitskii, S. N. Chupyra, and N. D. Vakhnyak
pp. 754-758 Full Text: PDF (79 kB)
Polarized Infrared and Raman Spectroscopy Studies of the Liquid Crystal E7 Alignment in Composites Based on Grooved Silicon
E. V. Astrova, T. S. Perova, S. A. Grudinkin, V. A. Tolmachev, Yu. A. Pilyugina, V. B. Voronkov, and J. K. Vij
pp. 759-767 Full Text: PDF (294 kB)
Hydrogen-Containing Donors in Silicon: Centers with Negative Effective Correlation Energy
Yu. M. Pokotilo, A. N. Petukh, V. V. Litvinov, and V. G. Tsvyrko
pp. 768-771 Full Text: PDF (59 kB)
Weak Ferromagnetism in InSe:Mn Layered Crystals
V. V. Slyn'ko, A. G. Khandozhko, Z. D. Kovalyuk, A. V. Zaslonkin, V. E. Slyn'ko, M. Arciszewska, and W. D. Dobrowolski
pp. 772-776 Full Text: PDF (71 kB)
Dispersion of the Refractive Index in Tl1 – xCuxGaSe2 (0 <= x <= 0.02) and Tl1 – xCuxInS2 (0 <= x <= 0.015) Crystals
A. N. Georgobiani, A. Kh. Matiev, and B. M. Khamkhoev
pp. 777-779 Full Text: PDF (42 kB)
The Effect of Neutron Irradiation on the Properties of n-InSb Whisker Microcrystals
I. A. Bolshakova, V. M. Boiko, V. N. Brudnyi, I. V. Kamenskaya, N. G. Kolin, E. Yu. Makido, T. A. Moskovets, and D. I. Merkurisov
pp. 780-785 Full Text: PDF (86 kB)
The Electrooptic Effect and Anisotropy of the Refractive Index in Tl1 – xCuxGaSe2 (0 <= x <= 0.02) Crystals
A. N. Georgobiani, A. Kh. Matiev, and B. M. Khamkhoev
pp. 786-788 Full Text: PDF (49 kB)
Stimulation of Negative Magnetoresistance by an Electric Field and Light in Silicon Doped with Boron and Manganese
M. K. Bakhadyrkhanov, O. É. Sattarov, Kh. M. Iliev, K. S. Ayupov, and Tuérdi Umaier
pp. 789-791 Full Text: PDF (51 kB)
SEMICONDUCTOR STRUCTURES, INTERFACES, AND SURFACES
Specific Features of the Physical Properties of a Modified CdTe Surface
V. P. Makhniy
pp. 792-794 Full Text: PDF (100 kB)
The Effects of Interface States on the Capacitance and Electroluminescence Efficiency of InGaN/GaN Light-Emitting Diodes
N. I. Bochkareva, E. A. Zhirnov, A. A. Efremov, Yu. T. Rebane, R. I. Gorbunov, A. V. Klochkov, D. A. Lavrinovich, and Yu. G. Shreter
pp. 795-799 Full Text: PDF (75 kB)
The Properties of Structures Based on Oxidized Porous Silicon under the Effect of Illumination and a Gas Environment
D. I. Bilenko, O. Ya. Belobrovaya, É. A. Zharkova, D. V. Terin, and E. I. Khasina
pp. 800-804 Full Text: PDF (74 kB)
LOW-DIMENSIONAL SYSTEMS
Optical Transitions in a Quantized Cylindrical Layer in the Presence of a Homogeneous Electric Field
V. A. Arutyunyan, S. L. Arutyunyan, G. O. Demirchyan, and G. Sh. Petrosyan
pp. 805-810 Full Text: PDF (73 kB)
Nonohmic Quasi-2D Hopping Conductance and the Kinetics of Its Relaxation
B. A. Aronzon, D. Yu. Kovalev, and V. V. Ryl'kov
pp. 811-819 Full Text: PDF (130 kB)
The Transition from Thermodynamically to Kinetically Controlled Formation of Quantum Dots in an InAs/GaAs(100) System
Yu. G. Musikhin, G. E. Cirlin, V. G. Dubrovskii, Yu. B. Samsonenko, A. A. Tonkikh, N. A. Bert, and V. M. Ustinov
pp. 820-825 Full Text: PDF (131 kB)
Resonance Modulation of Electron–Electron Relaxation by a Quantizing Magnetic Field
V. I. Kadushkin
pp. 826-829 Full Text: PDF (62 kB)
AMORPHOUS, VITREOUS, AND POROUS SEMICONDUCTORS
A Study of the Local Electronic and Atomic Structure in a-SixC1 – x Amorphous Alloys Using Ultrasoft X-ray Emission Spectroscopy
V. A. Terekhov, E. I. Terukov, I. N. Trapeznikova, V. M. Kashkarov, O. V. Kurilo, S. Yu. Turishchev, A. B. Golodenko, and É. P. Domashevskaya
pp. 830-834 Full Text: PDF (79 kB)
Optical and Electrical Properties of Thin Wafers Fabricated from Nanocrystalline Silicon Powder
N. N. Kononov, G. P. Kuz'min, A. N. Orlov, A. A. Surkov, and O. V. Tikhonevich
pp. 835-839 Full Text: PDF (77 kB)
Magnetic Properties of Iron-Modified Amorphous Carbon
S. G. Yastrebov, V. I. Ivanov-Omskii, V. Pop, C. Morosanu, A. Slav, and J. Voiron
pp. 840-844 Full Text: PDF (73 kB)
Photosensitive Properties and a Mechanism for Photogeneration of Charge Carriers in Polymeric Layers Containing Organometallic Complexes
E. L. Aleksandrova, M. Ya. Goikhman, I. V. Podeshvo, and V. V. Kudryavtsev
pp. 845-850 Full Text: PDF (85 kB)
PHYSICS OF SEMICONDUCTOR DEVICES
High-Power Flip–Chip Blue Light-Emitting Diodes Based on AlGaInN
D. A. Zakheim, I. P. Smirnova, I. V. Roznanskii, S. A. Gurevich, M. M. Kulagina, E. M. Arakcheeva, G. A. Onushkin, A. L. Zakheim, E. D. Vasil'eva, and G. V. Itkinson
pp. 851-855 Full Text: PDF (96 kB)
A Ferroelectric Field Effect Transistor Based on a Pb(ZrxTi1 – x)O3/SnO2 Heterostructure
I. E. Titkov, I. P. Pronin, D. V. Mashovets, L. A. Delimova, I. A. Liniichuk, and I. V. Grekhov
pp. 856-860 Full Text: PDF (153 kB)Archived web conten
Semiconductors V. 35, I. 11
No full textSemiconductors -- November 2001
Volume 35, Issue 11, pp. 1223-1346
ATOMIC STRUCTURE AND NONELECTRONIC PROPERTIES OF SEMICONDUCTORS
Physical Foundations of Metastable Impurity Center Reconstruction in Semiconductors
D. E. Onopko and A. I. Ryskin
pp. 1223-1230 Full Text: PDF (86 kB)
A Model of High- and Low-Temperature Phosphorus Diffusion in Silicon by a Dual Pair Mechanism
O. V. Aleksandrov
pp. 1231-1241 Full Text: PDF (123 kB)
ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS
The Impurity Optical Absorption and Conduction Band Structure in 6H-SiC
I. S. Gorban'[dagger] and A. P. Krokhmal'
pp. 1242-1248 Full Text: PDF (100 kB)
Magnetic Properties of Pb1 – xGexTe Alloys Doped with Ytterbium
E. P. Skipetrov, N. A. Chernova, L. A. Skipetrova, A. V. Golubev, and E. I. Slyn'ko
pp. 1249-1251 Full Text: PDF (47 kB)
On the Charge Transport Mechanism in n-InSb Films
Yu. A. Nikol'skii
pp. 1252-1253 Full Text: PDF (41 kB)
Effect of Bismuth Impurity on Carrier Density in PbSe:Bi:Se Epitaxial Layers
V. A. Zykov, T. A. Gavrikova, V. I. Il'in, S. A. Nemov, and P. V. Savintsev
pp. 1254-1258 Full Text: PDF (60 kB)
Photoelectric Phenomena in (µcxa1 – x)-Si:H/c-Si Heterostructures
H. Mell, Yu. A. Nikolaev, V. Yu. Rud', Yu. V. Rud', and E. I. Terukov
pp. 1259-1262 Full Text: PDF (69 kB)
A Pulsed Synthesis of beta-FeSi2 Layers on Silicon Implanted with Fe+ Ions
R. I. Batalov, R. M. Bayazitov, E. I. Terukov, V. Kh. Kudoyarova, G. Weiser, and H. Kuehne
pp. 1263-1269 Full Text: PDF (88 kB)
SEMICONDUCTOR STRUCTURES, INTERFACES, AND SURFACES
Generation–Recombination and Diffusion Currents in HgMnTe n+–p Junctions
L. A. Kosyachenko, A. V. Markov, S. É. Ostapov, and I. M. Rarenko
pp. 1270-1278 Full Text: PDF (119 kB)
Effect of Surface Orientation of CdxHg1 – xTe Crystals on the Properties of Surface Anodic Oxides
V. G. Sredin, Yu. S. Mezin, and V. M. Ukrozhenko
pp. 1279-1281 Full Text: PDF (50 kB)
Photosensitivity of a - C:H/c -Si Heterojunctions
V. G. Baryshnikov, Yu. A. Nikolaev, V. Yu. Rud', Yu. V. Rud', and E. I. Terukov
pp. 1282-1284 Full Text: PDF (55 kB)
Reverse Current in Graded-Gap p–n Structure with Nonmonotonic Coordinate Dependence of the Band Gap
B. S. Sokolovskii
pp. 1285-1290 Full Text: PDF (85 kB)
Role of Sulfide Ion Solvation in the Modification of GaAs Surface Electronic Structure
M. V. Lebedev
pp. 1291-1299 Full Text: PDF (103 kB)
LOW-DIMENSIONAL SYSTEMS
Analogue of Gunn Effect in Tunneling between Quantum Wells with Different Mobilities
P. I. Biryulin, A. A. Gorbatsevich, V. V. Kapaev, Yu. V. Kopaev, and V. T. Trofimov
pp. 1300-1304 Full Text: PDF (70 kB)
Electron Nonelastic Scattering by Confined and Interface Polar Optical Phonons in a Modulation-Doped AlGaAs/GaAs/AlGaAs Quantum Well
K. Pozela
pp. 1305-1308 Full Text: PDF (54 kB)
Electrical Characteristics of Single-Gate Interference Transistors Based on Various Semiconductor Materials
I. I. Abramov and A. I. Rahachou
pp. 1309-1313 Full Text: PDF (66 kB)
Medium-Range Order and Optoelectronic Properties of a Tetrahedrally Coordinated Hydrogenated Amorphous Semiconductor
O. A. Golikova
pp. 1314-1319 Full Text: PDF (72 kB)
Structural and Photonic Properties of Opal–GaN Nanocomposites
V. G. Golubev, D. A. Kurdyukov, A. V. Medvedev, A. B. Pevtsov, L. M. Sorokin, and J. L. Hutchison
pp. 1320-1323 Full Text: PDF (291 kB)
PHYSICS OF SEMICONDUCTOR DEVICES
MOCVD-Grown Broad Area InGaAs/GaAs/InGaP Laser Diodes
D. A. Vinokurov, V. A. Kapitonov, D. N. Nikolaev, A. L. Stankevich, A. V. Lyutetskii, N. A. Pikhtin, S. O. Slipchenko, Z. N. Sokolova, N. V. Fetisova, I. N. Arsent'ev, and I. S. Tarasov
pp. 1324-1328 Full Text: PDF (235 kB)
Photoluminescence Properties of Polycrystalline ZnO/CdS/CuInGaSe2 Solar Cells at a Low Temperature
G. A. Medvedkin, E. I. Terukov, K. Sato, Yu. Hasegava, and K. Hirose
pp. 1329-1334 Full Text: PDF (75 kB)
Simulation of Current–Voltage Characteristics of a Ferroelectric Field-Effect Transistor
L. S. Berman
pp. 1335-1339 Full Text: PDF (67 kB)
Improved Degradation Stability of Blue–Green II–VI Light-Emitting Diodes with Excluded Nitrogen-Doped ZnSe-Based Layers
N. Yu. Gordeev, S. V. Ivanov, V. I. Kopchatov, I. I. Novikov, T. V. Shubina, N. D. Il'inskaya, P. S. Kop'ev, G. Reuscher, A. Waag, and G. Landwehr
pp. 1340-1344 Full Text: PDF (75 kB)
PERSONALIA
In Memory of Aleksei Petrovich Shotov
Zh. I. Alferov, V. S. Bagaev, B. A. Volkov, A. A. Gippius, A. I. Golovashkin, S. P. Grishechkina, A. I. Demeshina, I. I. Zasavitskii, A. I. Isakov, L. V. Keldysh, Yu. V. Kopaev, B. D. Kopylovskii, O. N. Krokhin, A. I. Nadezhdinskii, I. G. Neizvestnyi, N. A. Penin, Yu. M. Popov, N. N. Sibel'din, V. I. Stafeev, V. A. Chuenkov, V. V. Shestakov, and A. É. Yunovich
pp. 1345-1346 Full Text: PDF (23 kB)Archived web conten
Semiconductors V. 38, I. 09
No full textSemiconductors -- September 2004
Volume 38, Issue 9, pp. 987-1114
ATOMIC STRUCTURE AND NONELECTRONIC PROPERTIES OF SEMICONDUCTORS
Certain Features of Ga Diffusion in ZnS Powders
Yu. Yu. Bacherikov, I. P. Vorona, S. V. Optasyuk, V. E. Rodionov, and A. A. Stadnik
pp. 987-991 Full Text: PDF (63 kB)
ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS
Impact-Ionization Autosolitons in Compensated Silicon
A. M. Musaev
pp. 992-995 Full Text: PDF (50 kB)
Effect of Vacuum Annealing on the Edge Luminescence of Undoped Zinc Selenide
V. P. Makhnii, A. M. Sletov, and I. V. Tkachenko
pp. 996-997 Full Text: PDF (39 kB)
Low-Frequency Noise in Gallium Nitride Epitaxial Layers with Different Degrees of Order of Mosaic Structure
N. M. Shmidt, M. E. Levinshtein, W. V. Lundin, A. I. Besyul'kin, P. S. Kop'ev, S. L. Rumyantsev, N. Pala, and M. S. Shur
pp. 998-1000 Full Text: PDF (49 kB)
Elementary Blue-Emission Bands in the Luminescence Spectrum of Undoped Gallium Nitride Films
A. N. Gruzintsev, A. N. Red'kin, V. I. Tatsii, C. Barthou, and P. Benalloul
pp. 1001-1004 Full Text: PDF (55 kB)
Determination of the Minority-Carrier Lifetime in Silicon Ingots by Photoconductivity Relaxation Measured at Microwave Frequencies
P. A. Borodovskii, A. F. Buldygin, and A. S. Tokarev
pp. 1005-1011 Full Text: PDF (101 kB)
SEMICONDUCTOR STRUCTURES, INTERFACES, AND SURFACES
Interfaces and Roughness in a Multilayer Silicon Structure
A. I. Belyaeva, A. A. Galuza, and S. N. Kolomiets
pp. 1012-1017 Full Text: PDF (246 kB)
Photosensitive Structures Based on Single-Crystal Silicon and Phthalocyanine CuPc: Fabrication and Properties
G. A. Il'chuk, N. V. Klimova, O. I. Kon'kov, S. E. Nikitin, Yu. A. Nikolaev, L. I. Rudaya, V. Yu. Rud', Yu. V. Rud', E. I. Terukov, V. V. Shamanin, and T. A. Yurre
pp. 1018-1022 Full Text: PDF (80 kB)
Interaction of C60 Molecules with the (100)W Surface: Adsorption, Initial Stages of Film Growth, and Thermal Transformation of the Adsorption Layer
N. R. Gall', E. V. Rut'kov, and A. Ya. Tontegode
pp. 1023-1029 Full Text: PDF (96 kB)
Radiative Recombination in a Silicon MOS Tunnel Structure
N. Asli, M. I. Vexler, I. V. Grekhov, P. Seegebrecht, S. E. Tyaginov, and A. F. Shulekin
pp. 1030-1035 Full Text: PDF (97 kB)
Potential Barrier Formation at a Metal–Semiconductor Contact Using Selective Removal of Atoms
B. A. Gurovich, B. A. Aronzon, V. V. Ryl'kov, E. D. Ol'shanskii, E. A. Kuleshova, D. I. Dolgii, D. Yu. Kovalev, and V. I. Filippov
pp. 1036-1040 Full Text: PDF (102 kB)
Special Features of Radiation-Defect Annealing in Silicon p–n Structures: The Role of Fe Impurity Atoms
B. A. Komarov
pp. 1041-1046 Full Text: PDF (80 kB)
LOW-DIMENSIONAL SYSTEMS
Electrical Properties of Metal–Semiconductor Nanocontacts
N. V. Vostokov and V. I. Shashkin
pp. 1047-1052 Full Text: PDF (71 kB)
Effect of Electron–Electron and Electron–Hole Collisions on Intraband Population Inversion of Electrons in Stepped Quantum Wells
V. L. Zerova, G. G. Zegrya, and L. E. Vorob'ev
pp. 1053-1060 Full Text: PDF (107 kB)
Calculation of Current–Voltage Characteristics of Gallium Arsenide Symmetric Double-Barrier Resonance Tunneling Structures with Allowance for the Destruction of Electron-Wave Coherence in Quantum Wells
D. V. Pozdnyakov, V. M. Borzdov, and F. F. Komarov
pp. 1061-1064 Full Text: PDF (54 kB)
Relaxation of Charge Carriers in Quantum Dots with the Involvement of Plasmon–Phonon Modes
A. V. Fedorov and A. V. Baranov
pp. 1065-1073 Full Text: PDF (112 kB)
AMORPHOUS, VITREOUS, AND POROUS SEMICONDUCTORS
Influence of Supramolecular Ordering on Photophysical Properties of Polyamidines
E. L. Aleksandrova, M. E. Kompan, M. M. Dudkina, A. V. Tenkovtsev, and E. I. Terukov
pp. 1074-1077 Full Text: PDF (61 kB)
Current Instability with an S-Shaped I–V Characteristic in Films of a Metal–Polymer Complex of Polyamide Acid with Tb+2
É. A. Lebedev, M. Ya. Goikhman, K. D. Tséndin, I. V. Podeshvo, E. I. Terukov, and V. V. Kudryavtsev
pp. 1078-1080 Full Text: PDF (41 kB)
Carrier Drift Mobility in Porous Silicon Carbide
L. P. Kazakova, M. G. Mynbaeva, and K. D. Mynbaev
pp. 1081-1083 Full Text: PDF (39 kB)
Quartz Microtubes Based on Macroporous Silicon
E. V. Astrova, T. N. Borovinskaya, T. S. Perova, and M. V. Zamoryanskaya
pp. 1084-1087 Full Text: PDF (348 kB)
Technique for Patterning Macroporous Silicon and the Fabrication of Bars of 2D Photonic Crystals with Vertical Walls
E. V. Astrova, T. N. Borovinskaya, V. A. Tolmachev, and T. S. Perova
pp. 1088-1091 Full Text: PDF (376 kB)
PHYSICS OF SEMICONDUCTOR DEVICES
A Study of Deep Levels in CdHgTe by Analyzing the Tunneling Current of Photodiodes
V. I. Turinov
pp. 1092-1098 Full Text: PDF (106 kB)
Lasing in Cd(Zn)Se/ZnMgSSe Heterostructures Pumped by Nitrogen and InGaN/GaN Lasers
I. V. Sedova, S. V. Sorokin, A. A. Toropov, V. A. Kaigorodov, S. V. Ivanov, P. S. Kop'ev, E. V. Lutsenko, V. N. Pavlovskii, V. Z. Zubelevich, A. L. Gurskii, G. P. Yablonskii, Y. Dikme, H. Kalisch, A. Szymakowski, R. H. Jansen, B. Schineller, and M. Heuken
pp. 1099-1104 Full Text: PDF (90 kB)
Characteristics of Planar Diodes Based on Heavily Doped GaAs/AlAs Superlattices in the Terahertz Frequency Region
D. G. Pavel'ev, N. V. Demarina, Yu. I. Koshurinov, A. P. Vasil'ev, E. S. Semenova, A. E. Zhukov, and V. M. Ustinov
pp. 1105-1110 Full Text: PDF (89 kB)
Behavior of Graded-Gap Detectors of Ionizing Radiation under Irradiation with Alpha Particles
L. Dapkus, K. Pozela, J. Pozela, A. Silenas, V. Juciene, and V. Jasutis
pp. 1111-1114 Full Text: PDF (59 kB)Archived web conten
Semiconductors V. 35, I. 08
No full textdc.description[en_US]Semiconductors -- August 2001
Volume 35, Issue 8, pp. 861-979
ATOMIC STRUCTURE AND NONELECTRONIC PROPERTIES OF SEMICONDUCTORS
Growth of Fractal Lithium Clusters in Germanium
S. V. Bulyarskii, V. V. Svetukhin, O. V. Agafonova, A. G. Grishin, and P. A. Il'in
pp. 861-863 Full Text: PDF (49 kB)
Vibration Modes of Oxygen Dimers in Germanium
V. V. Litvinov, L. I. Murin, L. Lindstr�_m, V. P. Markevich, and A. A. Klechko
pp. 864-869 Full Text: PDF (105 kB)
ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS
Effect of Deviations from Stoichiometry on Electrical Conductivity and Photoconductivity of CuInSe2 Crystals
M. A. Abdullaev, Dz. Kh. Magomedova, R. M. Gadzhieva, E. I. Terukov, Yu. A. Nikolaev, Yu. V. Rud', and P. P. Khokhlachev
pp. 870-872 Full Text: PDF (61 kB)
The Onset of Double Limiting Cycle in the Impurity-Assisted Electric Breakdown of a Compensated Semiconductor with a Shorted Hall Voltage
K. M. Jandieri and Z. S. Kachlishvili
pp. 873-876 Full Text: PDF (56 kB)
Preparation and Properties of Isotopically Pure Polycrystalline Silicon
O. N. Godisov, A. K. Kaliteevskii, V. I. Korolev, B. Ya. Ber, V. Yu. Davydov, M. A. Kaliteevskii, and P. S. Kop'ev
pp. 877-879 Full Text: PDF (46 kB)
Electrical Properties of CdxHg1 ��� xTe/CdZnTe Heterostructures
A. G. Belov, A. I. Belogorokhov, and V. M. Lakeenkov
pp. 880-882 Full Text: PDF (44 kB)
Native and Impurity Defects in ZnSe:In Single Crystals Prepared by Free Growth
Yu. F. Vaksman, Yu. A. Nitsuk, Yu. N. Purtov, and P. V. Shapkin
pp. 883-889 Full Text: PDF (88 kB)
Origin of an Absorption Band Peaked at 5560 cm���1 and Related to Divacancies in Si1 ��� xGex
Yu. V. Pomozov, M. G. Sosnin, L. I. Khirunenko, N. V. Abrosimov, and W. Schr�_der
pp. 890-894 Full Text: PDF (71 kB)
Photoluminescence Kinetics in GaAs under the Influence of Surface Acoustic Waves
K. S. Zhuravlev, A. M. Gilinskii, A. V. Tsarev, and A. E. Nikolaenko
pp. 895-899 Full Text: PDF (71 kB)
Optical Band Gap of Cd1 ��� xMnxTe and Zn1 ��� xMnxTe Semiconductors
P. V. Zhukovskii, Ya. Partyka, P. Vengerek, Yu. V. Sidorenko, Yu. A. Shostak, and A. Rodzik
pp. 900-903 Full Text: PDF (64 kB)
The Role of Lead in Growing Ga1 ��� XInXAsYSb1 ��� Y Solid Solutions by Liquid-Phase Epitaxy
T. I. Voronina, T. S. Lagunova, E. V. Kunitsyna, Ya. A. Parkhomenko, D. A. Vasyukov, and Yu. P. Yakovlev
pp. 904-911 Full Text: PDF (105 kB)
SEMICONDUCTOR STRUCTURES, INTERFACES, AND SURFACES
Interface States and Deep-Level Centers in Silicon-on-Insulator Structures
I. V. Antonova, J. Stano, D. V. Nikolaev, O. V. Naumova, V. P. Popov, and V. A. Skuratov
pp. 912-917 Full Text: PDF (80 kB)
Simultaneous Doping of Silicon Layers with Erbium and Oxygen in the Course of Molecular-Beam Epitaxy
V. G. Shengurov, S. P. Svetlov, V. Yu. Chalkov, G. A. Maksimov, Z. F. Krasil'nik, B. A. Andreev, M. V. Stepikhova, D. V. Shengurov, L. Palmetshofer, and H. Ellmer
pp. 918-923 Full Text: PDF (147 kB)
Pulsed Laser-Stimulated Surface Acoustic Waves in p-CdTe Crystals
A. Baidullaeva, A. I. Vlasenko, �. I. Kuznetsov, A. V. Lomovtsev, P. E. Mozol', and A. B. Smirnov
pp. 924-926 Full Text: PDF (194 kB)
Analysis of Inherent Potential Nonuniformities at the Extrinsic-Semiconductor Surface
V. B. Bondarenko, M. V. Kuz'min, and V. V. Korablev
pp. 927-931 Full Text: PDF (65 kB)
LOW-DIMENSIONAL SYSTEMS
Anisotropy of the Spatial Distribution of In(Ga)As Quantum Dots in In(Ga)As���GaAs Multilayer Heterostructures Studied by X-ray and Synchrotron Diffraction and Transmission Electron Microscopy
N. N. Faleev, Yu. G. Musikhin, A. A. Suvorova, A. Yu. Egorov, A. E. Zhukov, A. R. Kovsh, V. M. Ustinov, M. Tabuchi, and Y. Takeda
pp. 932-940 Full Text: PDF (238 kB)
Optical Properties of Germanium Monolayers on Silicon
T. M. Burbaev, T. N. Zavaritskaya, V. A. Kurbatov, N. N. Mel'nik, V. A. Tsvetkov, K. S. Zhuravlev, V. A. Markov, and A. I. Nikiforov
pp. 941-946 Full Text: PDF (75 kB)
AMORPHOUS, VITREOUS, AND POROUS SEMICONDUCTORS
The Effect of External Factors on Photoelectric Parameters of Amorphous Hydrogenated Silicon in Relation to the Initial Characteristics of the Films
N. Rakhimov, U. Babakhodzhaev, Kh. Mavlyanov, and R. Ikramov
pp. 947-948 Full Text: PDF (38 kB)
Anomalous Polarization of Raman Scattering by Transverse and Longitudinal Phonons in Porous Doped GaAs
V. N. Denisov, B. N. Mavrin, and V. A. Karavanskii
pp. 949-952 Full Text: PDF (61 kB)
Effect of Temperature on Photoconductivity and Its Decay in Microcrystalline Silicon
A. G. Kazanskii, H. Mell, E. I. Terukov, and P. A. Forsh
pp. 953-955 Full Text: PDF (54 kB)
X-ray Spectroscopic Study of Electronic Structure of Amorphous Silicon and Silicyne
A. I. Mashin, A. F. Khokhlov, �. P. Domashevskaya, V. A. Terekhov, and N. I. Mashin
pp. 956-961 Full Text: PDF (161 kB)
PHYSICS OF SEMICONDUCTOR DEVICES
Threshold Characteristics of lambda = 1.55 ��m InGaAsP/InP Heterolasers
G. G. Zegrya, N. A. Pikhtin, G. V. Skrynnikov, S. O. Slipchenko, and I. S. Tarasov
pp. 962-969 Full Text: PDF (96 kB)
An Ionization-Type Si:S-Based Semiconductor Converter of Infrared Images with Sensitivity in the Spectral Range of CO2-Laser Radiation
V. T. Tulanov, Kh. B. Siyabekov, A. Sh. Davletova, and K. A. Ortaeva
pp. 970-973 Full Text: PDF (51 kB)
A Study of Technological Processes in the Production of High-Power High-Voltage Bipolar Transistors Incorporating an Array of Inclusions in the Collector Region
N. I. Volokobinskaya, I. N. Komarov, T. V. Matyukhina, V. I. Reshetnikov, A. A. Rush, I. V. Falina, and A. S. Yastrebov
pp. 974-978 Full Text: PDF (404 kB)
ERRATA
Erratum: "Carrier Photoexcitation from Levels in Quantum Dots to States of the Continuum in Lasing" [Semiconductors 35 (3), 343 (2001)]
L. V. Asryan and R. A. Suris
p. 979 Full Text: PDF (6 kB)dc.description.contributor[en_US]dc.description.contributor[en_US
- …
