2,522 research outputs found
JETP Letters V. 65, I .10
No full textJETP Letters -- May 25, 1997
Volume 65, Issue 10, pp. 763-832
Possible origin and spectrum of ultrahigh-energy cosmic rays
A. V. Uryson
Full Text: PDF (72 kB)
Inclusive semileptonic decays of B mesons
S. Ya. Kotkovskii
Full Text: PDF (94 kB)
New possibilities for producing photon echoes from a homogeneous ensemble of atoms and with the use of a single light pulse
G. N. Nikolaev
Full Text: PDF (139 kB)
Quantum theory of cooling of atoms below the one-photon recoil energy by a pulsed field
A. V. Taichenachev, A. M. Tumaikin, and V. I. Yudin
Full Text: PDF (120 kB)
Properties of IR-active lattice vibrations in the vicinity of kinks in the Frenkel–Kontorova model
V. M. Burlakov and M. A. Moskalenko
Full Text: PDF (100 kB)
Quasiparticle dynamics and phase locking in a S–I–S multilayer Josephson junction
D. A. Ryndyk
Full Text: PDF (103 kB)
Solitary flexural waves on a supersonic domain wall in yttrium orthoferrite
M. V. Chetkin, Yu. N. Kurbatova, and V. N. Filatov
Full Text: PDF (689 kB)
Fine structure of excitonic levels in quantum dots
R. I. Dzhioev, B. P. Zakharchenya, E. L. Ivchenko, V. L. Korenev, Yu. G. Kusraev, N. N. Ledentsov, V. M. Ustinov, A. E. Zhukov, and A. F. Tsatsul'nikov
Full Text: PDF (118 kB)
Competition between nuclear ferromagnetism and superconductivity
A. M. Dyugaev, I. D. Vagner, and P. Wyder
Full Text: PDF (82 kB)
Localized states at the helicoidal phase transition
A. Buzdin and Y. Meurdesoif
Full Text: PDF (121 kB)
Stripe motion in CuO2 planes ofY1 – xPrxBa2Cu3O7 as observed from the Cu(2) quadrupole resonance
M. A. Teplov, Yu. A. Sakhratov, A. V. Dooglav, A. V. Egorov, E. V. Krjukov, and O. P. Zaitsev
Full Text: PDF (134 kB)
Observation of stochastic resonance in a monostable magnetic system
A. N. Grigorenko, P. I. Nikitin, and G. V. Roshchepkin
Full Text: PDF (97 kB)Archived web conten
Plasma Physics Reports V. 31, I. 11
No full textPlasma Physics Reports -- November 2005
Volume 31, Issue 11, pp. 893-983
TOKAMAKS
Analysis of Electron Thermal Diffusivity and Bootstrap Current in Ohmically Heated Discharges after Boronization in the HT-7 Tokamak
X. M. Zhang and B. N. Wan
pp. 893-898 Full Text: PDF (186 kB)
MAGNETIC CONFINEMENT SYSTEMS
Formation of a Narrow Radial Density Profile of Fast Ions in the GDT Device
V. V. Prikhodko, A. V. Anikeev, P. A. Bagryansky, A. A. Lizunov, V. V. Maximov, S. V. Murakhtin, and Yu. A. Tsidulko
pp. 899-907 Full Text: PDF (207 kB)
PLASMA DYNAMICS
Measurements of the Azimuthal Magnetic Field within Imploding Multiwire Arrays in the Angara-5-1 Facility
G. G. Zukakishvili, K. N. Mitrofanov, V. V. Aleksandrov, E. V. Grabovskii, G. M. Oleinik, I. Yu. Porofeev, P. V. Sasorov, and I. N. Frolov
pp. 908-918 Full Text: PDF (588 kB)
Nanosecond Electric Explosion of a Tungsten Wire in Different Media
A. E. Ter-Oganesyan, S. I. Tkachenko, V. M. Romanova, A. R. Mingaleev, T. A. Shelkovenko, and S. A. Pikuz
pp. 919-926 Full Text: PDF (179 kB)
PLASMA INSTABILITIES
Laboratory Modeling of Nonstationary Processes in Space Cyclotron Masers: First Results and Prospects
A. V. Vodop'yanov, S. V. Golubev, A. G. Demekhov, V. G. Zorin, D. A. Mansfel'd, S. V. Razin, and V. Yu. Trakhtengerts
pp. 927-937 Full Text: PDF (339 kB)
PLASMA ELECTRONICS
Experimental and Theoretical Investigations of Stochastic Oscillatory Phenomena in a Nonrelativistic Electron Beam with a Virtual Cathode
Yu. A. Kalinin, A. A. Koronovskii, A. E. Khramov, E. N. Egorov, and R. A. Filatov
pp. 938-952 Full Text: PDF (364 kB)
PARTICLE ACCELERATION IN PLASMA
Mechanism for Ion Acceleration along the Normal to the Axis of a Beam–Plasma Discharge in a Weak Magnetic Field
N. V. Isaev, A. A. Rukhadze, and E. G. Shustin
pp. 953-960 Full Text: PDF (114 kB)
PLASMA OPTICS
Formation of a Cylindrical Ion Beam in the Field of an Axisymmetric System of Ring Currents at a Low Hall Current
V. P. Shumilin
pp. 961-964 Full Text: PDF (54 kB)
LOW-TEMPERATURE PLASMA
Self-Consistent Simulation of Pulsed and Continuous Microwave Discharges in Hydrogen
V. A. Koldanov, A. M. Gorbachev, A. L. Vikharev, and D. B. Radishchev
pp. 965-977 Full Text: PDF (160 kB)
Instability of a Low-Pressure Hollow-Cathode Discharge in a Magnetic Field
E. M. Oks, A. Anders, I. G. Brown, I. A. Soloshenko, and A. I. Shchedrin
pp. 978-983 Full Text: PDF (95 kB)Archived web conten
Plasma Physics Reports V. 29, I. 12
No full textleave(s) : ill; 28 cm.Plasma Physics Reports -- December 2003
Volume 29, Issue 12, pp. 997-1071
TOKAMAKS
Real-Time Determination of the Position and Shape of the Plasma Column from External Magnetic Measurements in the GLOBUS-M Tokamak
V. M. Amoskov, V. A. Belyakov, S. E. Bender, V. K. Gusev, A. A. Kavin, E. A. Lamzin, R. G. Levin, S. N. Sadakov, N. V. Sakharov, S. E. Sychevskii, and O. G. Filatov
pp. 997-1008 Full Text: PDF (229 kB)
MHD Limits in the T-15M Tokamak
S. Yu. Medvedev and V. D. Pustovitov
pp. 1009-1018 Full Text: PDF (269 kB)
PLASMA DIAGNOSTICS
Second Harmonic of Gyrotron Radiation: New Potentialities of Plasma Diagnostics
G. M. Batanov, L. V. Kolik, M. I. Petelin, A. E. Petrov, A. A. Pshenichnikov, K. A. Sarksyan, N. N. Skvortsova, and N. K. Kharchev
pp. 1019-1027 Full Text: PDF (369 kB)
STELLARATORS
Influence of the Plasma Density and Heating Power on the Intensity of Electron Cyclotron Emission in the L-2M Stellarator
D. K. Akulina, G. M. Batanov, M. S. Berezhetskii, G. S. Voronov, G. A. Gladkov, S. E. Grebenshchikov, I. S. Danilkin, N. F. Larionova, A. I. Meshcheryakov, K. A. Sarksyan, O. I. Fedyanin, N. K. Kharchev, Yu. V. Khol'nov, and S. V. Shchepetov
pp. 1028-1033 Full Text: PDF (99 kB)
PLASMA DYNAMICS
Experimental and Numerical Studies of Plasma Production in the Initial Stage of Implosion of a Cylindrical Wire Array
V. V. Aleksandrov, A. G. Alekseev, V. N. Amosov, M. M. Basko, G. S. Volkov, E. V. Grabovskii, A. V. Krasil'nikov, G. M. Oleinik, I. N. Rastyagaev, P. V. Sasorov, A. A. Samokhin, V. P. Smirnov, and I. N. Frolov
pp. 1034-1040 Full Text: PDF (128 kB)
NONLINEAR PHENOMENA
Thermal Nonlinearity of Potential Surface Waves at a Plasma���Metal Interface
N. A. Azarenkov, Yu. A. Akimov, and V. P. Olefir
pp. 1041-1048 Full Text: PDF (101 kB)
SPACE PLASMA
Coronal Oscillations and Internal Loop Structure
A. A. Solov'ev, B. B. Mikhalyaev, and E. A. Kirichek
pp. 1049-1055 Full Text: PDF (89 kB)
LOW-TEMPERATURE PLASMA
Investigation of the Anisotropic Electron Distribution Function in a Glow Discharge in Hydrogen
Yu. B. Pankrashkin and M. B. Shapochkin
pp. 1056-1061 Full Text: PDF (75 kB)
Abnormal and Subnormal Regimes of a Spherical Glow Discharge in the Drift-Diffusion Approximation
G. I. Sukhinin and A. V. Fedoseev
pp. 1062-1069 Full Text: PDF (108 kB)
Yakov Borisovich Fainberg (in Honor of His 85th Birthday)
pp. 1070-1071 Full Text: PDF (116 kB)The content contained herein is maintained and curated by the Preservation Department.This record is revised and maintained by the content administrators from the Cataloging & Metadata Department
Plasma Physics Reports V. 29, I. 12
No full textPlasma Physics Reports -- December 2003
Volume 29, Issue 12, pp. 997-1071
TOKAMAKS
Real-Time Determination of the Position and Shape of the Plasma Column from External Magnetic Measurements in the GLOBUS-M Tokamak
V. M. Amoskov, V. A. Belyakov, S. E. Bender, V. K. Gusev, A. A. Kavin, E. A. Lamzin, R. G. Levin, S. N. Sadakov, N. V. Sakharov, S. E. Sychevskii, and O. G. Filatov
pp. 997-1008 Full Text: PDF (229 kB)
MHD Limits in the T-15M Tokamak
S. Yu. Medvedev and V. D. Pustovitov
pp. 1009-1018 Full Text: PDF (269 kB)
PLASMA DIAGNOSTICS
Second Harmonic of Gyrotron Radiation: New Potentialities of Plasma Diagnostics
G. M. Batanov, L. V. Kolik, M. I. Petelin, A. E. Petrov, A. A. Pshenichnikov, K. A. Sarksyan, N. N. Skvortsova, and N. K. Kharchev
pp. 1019-1027 Full Text: PDF (369 kB)
STELLARATORS
Influence of the Plasma Density and Heating Power on the Intensity of Electron Cyclotron Emission in the L-2M Stellarator
D. K. Akulina, G. M. Batanov, M. S. Berezhetskii, G. S. Voronov, G. A. Gladkov, S. E. Grebenshchikov, I. S. Danilkin, N. F. Larionova, A. I. Meshcheryakov, K. A. Sarksyan, O. I. Fedyanin, N. K. Kharchev, Yu. V. Khol'nov, and S. V. Shchepetov
pp. 1028-1033 Full Text: PDF (99 kB)
PLASMA DYNAMICS
Experimental and Numerical Studies of Plasma Production in the Initial Stage of Implosion of a Cylindrical Wire Array
V. V. Aleksandrov, A. G. Alekseev, V. N. Amosov, M. M. Basko, G. S. Volkov, E. V. Grabovskii, A. V. Krasil'nikov, G. M. Oleinik, I. N. Rastyagaev, P. V. Sasorov, A. A. Samokhin, V. P. Smirnov, and I. N. Frolov
pp. 1034-1040 Full Text: PDF (128 kB)
NONLINEAR PHENOMENA
Thermal Nonlinearity of Potential Surface Waves at a Plasma–Metal Interface
N. A. Azarenkov, Yu. A. Akimov, and V. P. Olefir
pp. 1041-1048 Full Text: PDF (101 kB)
SPACE PLASMA
Coronal Oscillations and Internal Loop Structure
A. A. Solov'ev, B. B. Mikhalyaev, and E. A. Kirichek
pp. 1049-1055 Full Text: PDF (89 kB)
LOW-TEMPERATURE PLASMA
Investigation of the Anisotropic Electron Distribution Function in a Glow Discharge in Hydrogen
Yu. B. Pankrashkin and M. B. Shapochkin
pp. 1056-1061 Full Text: PDF (75 kB)
Abnormal and Subnormal Regimes of a Spherical Glow Discharge in the Drift-Diffusion Approximation
G. I. Sukhinin and A. V. Fedoseev
pp. 1062-1069 Full Text: PDF (108 kB)
Yakov Borisovich Fainberg (in Honor of His 85th Birthday)
pp. 1070-1071 Full Text: PDF (116 kB)Archived web conten
Il futuro della Federazione Russa, visto dal 1996. Tavola rotonda. Alle domande di FUTURIBILI rispondono Mikhail S. Gorbaciov, Sergej A. Filatov, Georgij A. Satarov, Vladimir V. Zirinovskij
Get PDFDopo il collasso dell’Unione Sovietica e la fine del bipolarismo Usa-Urss è iniziato un processo di ridefinizione dei tradizionali equilibri geo-politici che hanno caratterizzato la seconda metà del Novecento. Le profonde trasformazioni politiche cui abbiamo fatto cenno coinvolgono in modo diretto non solo gli Stati Uniti ed i paesi della Comunità degli stati indipendenti, ma anche i paesi dell’Europa occidentale e centro-orientale, nonché lealtre potenze del nord-America, il Giappone ed i paesi confinanti con la Federazione Russa. Nello spazio geo-politico della ex-Unione Sovietica vi sono, inoltre, particolari elementi di instabilità che potrebbero generare seri rischi di frammentazione su base nazionale e regionale. L’ordine internazionale che risulterà in futuro dalla fine del bipolarismo, i problemi interni della Federazione Russa e le relazioni di questa ultima con gli ex-avversari e gli ex-alleati di un tempo sono alcuni dei temi discussi nella Tavola Rotonda che ha coinvolto Mikhail S.Gorbaciov, ultimo presidente dell’Unione Sovietica, Sergej A Filatov, già capo dell’Amministrazione presidenziale della Federazione Russa, Georgij A. Satarov, consigliere politico del presidente Eltsin, Vladimir V. Zirinovskij, leader del Partito liberal-democratico.After the collapse of the Soviet Union and the end of U.S.-Soviet bipolarism there began the redefinition of the traditional geo-political balances that have marked the second half of last century. These profound political changes directly involve not only the United States and the Commonwealth of Independent States, but also western and central-eastern Europe and the other powers in north America, Japan and the countries bordering on the Russian Federation. In the geo-political area of the former Soviet Union there are also particular factors of instability that could in the future produce serious risks of fragmentation on a national and regional basis. The international order that will follow the end of bipolarism, the domestic problems of the Russian Federation and its relations with its former adversaries and allies are among the themes discussed in this Round Table. It was attended by Mikhail S. Gorbachev, former President of the Soviet Union, Sergeij A. Filatov, Head of the Presidential Administration of the Russian Federation, Georgy A. Satarov, Foreign Relations Advisor to President Yeltsin, and Vladimir V. Zhirinovsky, leader of the Liberal Democratic Party
Semiconductors V. 34, I. 01
No full textSemiconductors -- January 2000
Volume 34, Issue 1, pp. 1-121
ATOMIC STRUCTURE AND NONELECTRONIC PROPERTIES OF SEMICONDUCTORS
Holmium Redistribution upon Solid-Phase Epitaxial Crystallization of Amorphized Silicon Layers
O. V. Aleksandrov, Yu. A. Nikolaev, and N. A. Sobolev
pp. 1-5 Full Text: PDF (64 kB)
Elastic Strain and Composition of Self-Assembled GeSi Nanoislands on Si(001)
N. V. Vostokov, S. A. Gusev, I. V. Dolgov, Yu. N. Drozdov, Z. F. Krasil'nik, D. N. Lobanov, L. D. Moldavskaya, A. V. Novikov, V. V. Postnikov, and D. O. Filatov
pp. 6-10 Full Text: PDF (194 kB)
ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS
Emission Associated with Extended Defects in Epitaxial ZnTe/GaAs Layers and Multilayer Structures
E. F. Venger, Yu. G. Sadof'ev, G. N. Semenova, N. E. Korsunskaya, V. P. Klad'ko, M. P. Semtsiv, and L. V. Borkovskaya
pp. 11-16 Full Text: PDF (82 kB)
Evolution of Photoluminescence Spectra of Stoichiometric CdTe: Dependence on the Purity of Starting Components
A. V. Kvit, Yu. V. Klevkov, S. A. Medvedev, V. S. Bagaev, A. V. Perestoronin, and A. F. Plotnikov
pp. 17-20 Full Text: PDF (58 kB)
Formation of Photoluminescence Centers During Annealing of SiO2 Layers Implanted with Ge Ions
G. A. Kachurin, L. Rebohle, I. E. Tyschenko, V. A. Volodin, M. Voelskow, W. Skorupa, and H. Froeb
pp. 21-26 Full Text: PDF (90 kB)
Special Features of Electrical Activation of 28Si in Single-Crystal and Epitaxial GaAs Subjected to Rapid Thermal Annealing
V. M. Ardyshev, M. V. Ardyshev, and S. S. Khludkov
pp. 27-31 Full Text: PDF (63 kB)
Electrophysical Properties of Hg1–xCdxTe Crystals under Hydrostatic Pressure
I. V. Virt, V. D. Prozorovskii, and D. I. Tsyutsyura
pp. 32-34 Full Text: PDF (49 kB)
Band Structure and Spatial Charge Distribution in AlxGa1–xN
V. G. Deibuk, A. V. Voznyi, and M. M. Sletov
pp. 35-39 Full Text: PDF (178 kB)
Field Dependence of the Rate of Thermal Emission of Holes from the VGaSAs Complex in Gallium Arsenide
S. V. Bulyarskii, N. S. Grushko, and A. V. Zhukov
pp. 40-44 Full Text: PDF (74 kB)
Electron Spin Resonance in the Vicinity of Metal–Insulator Transition in Compensated n-Ge:As
A. I. Veinger, A. G. Zabrodskii, and T. V. Tisnek
pp. 45-55 Full Text: PDF (147 kB)
SEMICONDUCTORS STRUCTURES, INTERFACES, AND SURFACES
Ellipsometric Study of Ultrathin AlxGa1–xAs Layers
M. V. Sukhorukova, I. A. Skorokhodova, and V. P. Khvostikov
pp. 56-60 Full Text: PDF (82 kB)
Transverse Optical Phonon Splitting in GaAs/AlAs Superlattices Grown on the GaAs(311) Surface Studied by the Method of Raman Light Scattering
V. A. Volodin, M. D. Efremov, V. V. Preobrazhenskii, B. R. Semyagin, V. V. Bolotov, and V. A. Sachkov
pp. 61-66 Full Text: PDF (87 kB)
Dynamic Strain-Sensitive Characteristics of the Schottky-Barrier Diodes under a Pulsed Uniform Pressure
O. O. Mamatkarimov, S. Z. Zainabidinov, A. Abduraimov, R. Kh. Khamidov, and U. A. Tuichiev
pp. 67-69 Full Text: PDF (49 kB)
Effect of the Insulator–Gallium Arsenide Boundary on the Behavior of Silicon in the Course of Radiation Annealing
V. M. Ardyshev, M. V. Ardyshev, and S. S. Khludkov
pp. 70-72 Full Text: PDF (48 kB)
Temperature Dependence of Residual Stress in Epitaxial GaAs/Si(100) Films Determined from Photoreflectance Spectroscopy Data
R. V. Kuz'menko, A. V. Ganzha, O. V. Bochurova, É. P. Domashevskaya, J. Schreiber, S. Hildebrandt, S. Mo, E. Peiner, and A. Schlachetzki
pp. 73-80 Full Text: PDF (102 kB)
AMORPHOUS, VITREOUS, AND POROUS SEMICONDUCTORS
Energy Distribution of Localized States in Amorphous Hydrogenated Silicon
K. V. Kougiya, E. I. Terukov, and I. N. Trapeznikova
pp. 81-86 Full Text: PDF (79 kB)
Modifications of the Structure and Electrical Parameters of the Films of Amorphous Hydrogenated Silicon Implanted with Si+ Ions
O. A. Golikova, A. N. Kuznetsov, V. Kh. Kudoyarova, I. N. Petrov, É. P. Domashevskaya, and V. A. Terekhov
pp. 87-91 Full Text: PDF (68 kB)
The Influence of Local Surroundings of Er Atoms on the Kinetics of Decay of Er Photoluminescence in Amorphous Hydrogenated Silicon
E. I. Terukov, V. Kh. Kudoyarova, O. I. Kon'kov, E. A. Konstantinova, B. V. Kamenev, and V. Yu. Timoshenko
pp. 92-94 Full Text: PDF (48 kB)
Crystal–Glass Phase Transition Induced by Pulses of Electric Field in Chalcogenide Semiconductors
É. A. Lebedev, K. D. Tséndin, and L. P. Kazakova
pp. 95-97 Full Text: PDF (40 kB)
Growth of a-C:H and a-C:H Films Produced by Magnetron Sputtering
T. K. Zvonareva, V. I. Ivanov-Omskii, A. V. Nashchekin, and L. V. Sharonova
pp. 98-103 Full Text: PDF (330 kB)
PHYSICS OF SEMICONDUCTOR DEVICES
Light Emitting Diodes for the Spectral Range of lambda = 3.3–4.3µm Fabricated from the InGaAs- and InAsSbP-Based Solid Solutions: Electroluminescence in the Temperature Range of 20–180°C
M. Aidaraliev, N. V. Zotova, S. A. Karandashev, B. A. Matveev, M. A. Remennyi, N. M. Stus', and G. N. Talalakin
pp. 104-107 Full Text: PDF (74 kB)
Current Transport in the Me–n–n+ Schottky–Barrier Structures
N. A. Torkhov and S. V. Eremeev
pp. 108-114 Full Text: PDF (100 kB)
Capacitance Measurements for Diodes in the Case of Strong Dependence of the Diode-Base Series Resistance on the Applied Voltage
A. A. Lebedev, Jr, A. A. Lebedev[dagger], and D. V. Davydov
pp. 115-118 Full Text: PDF (66 kB)
A Spatially Single-Mode Laser for a Range of 1.25–1.28µm on the Basis of InAs Quantum Dots on a GaAs Substrate
S. S. Mikhrin, A. E. Zhukov, A. R. Kovsh, N. A. Maleev, V. M. Ustinov, Yu. M. Shernyakov, I. N. Kayander, E. Yu. Kondrat'eva, D. A. Livshits, I. S. Tarasov, M. V. Maksimov, A. F. Tsatsul'nikov, N. N. Ledentsov, P. S. Kop'ev, D. Bimberg, and Zh. I. Alferov
pp. 119-121 Full Text: PDF (55 kB)Archived web conten
Semiconductors V. 32, I. 10
No full textleave(s) : ill; 28 cm.Semiconductors -- October 1998
Volume 32, Issue 10, pp. 1029-1140
ATOMIC STRUCTURE AND NON-ELECTRONIC PROPERTIES OF SEMICONDUCTORS
Activation and distribution of silicon implanted in gallium arsenide as a result of isothermal radiation annealing
V. M. Ardyshev and M. V. Ardyshev
Full Text: PDF (84 kB)
Equilibrium of native point defects in tin dioxide
K. P. Bogdanov, D. Ts. Dimitrov, O. F. Lutskaya, and Yu. M. Tairov
Full Text: PDF (76 kB)
Arsenic cluster superlattice in gallium arsenide grown by low-temperature molecular-beam epitaxy
V. V. Chaldyshev, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin, N. A. Bert, A. E. Kunitsyn, Yu. G. Musikhin, V. V. Tret'yakov, and P. Werner
Full Text: PDF (740 kB)
ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS
Photoconductivity of copper-compensated gallium phosphide
N. N. Pribylov, S. I. Rembeza, A. I. Spirin, V. A. Buslov, and S. A. Sushkov
Full Text: PDF (94 kB)
Accumulation of electrons in GaAs layers grown at low temperatures and containing arsenic clusters
P. N. Brunkov, V. V. Chaldyshev, N. A. Bert, A. A. Suvorova, S. G. Konnikov, A. V. Chernigovskii, V. V. Preobrazhenskii, M. A. Putyato, and B. R. Semyagin
Full Text: PDF (297 kB)
Study of GaN thin layers subjected to high-temperature rapid thermal annealing
N.I. Katsavets, G. M. Laws, I. Harrison, E. C. Larkins, T. M. Benson, T. S. Cheng, and C. T. Foxon
Full Text: PDF (83 kB)
Nitrogen divacancies ��� the possible cause of the "yellow band" in the luminescence spectra of GaN
A. �. Yunovich
Full Text: PDF (60 kB)
A new recombination center in heavily doped GaAs : Zn grown by liquid-phase epitaxy
K. S. Zhuravlev, T. S. Shamirzaev, N. A. Yakusheva, and I. P. Petrenko
Full Text: PDF (104 kB)
Effect of In doping on the kinetic coefficients in solid solutions of the system (PbzSn1 ��� z)0.95Ge0.05Te
S. A. Nemov, V. I. Proshin, and S. M. Nakhmanson
Full Text: PDF (74 kB)
Differential methods for determination of deep-level parameters from recombination currents of p���n junctions
S. V. Bulyarskii, N. S. Grushko, and A. V. Lakalin
Full Text: PDF (109 kB)
Experimental corrections for the hot hole distribution function in germanium in crossed electric and magnetic fields
V. N. Tulupenko
Full Text: PDF (90 kB)
Influence of nonuniform spatial distribution of nonequilibrium carriers on the edge emission spectra of direct-gap semiconductors
P. G. Lukashevich
Full Text: PDF (60 kB)
SEMICONDUCTORS STRUCTURES,INTERFACES,AND SURFACES
Optoelectronic phenomena in GaAs and GaP layers prepared by nitrogen treatment
V. F. Agekyan, V. I. Ivanov-Omskii, V. N. Knyazevskii, Yu. V. Rud', and V. Yu. Rud'
Full Text: PDF (46 kB)
Photoelectric properties of GaN/GaP heterostructures
V. M. Botnaryuk, S. D. Raevskii, V. V. Bel'kov, Yu. V. Zhilyaev, Yu. V. Rud', L. M. Fedorov, and V. Yu. Rud'
Full Text: PDF (79 kB)
Photoluminescence of the space charge region of metal���zinc selenide contacts
V. P. Makhnii and M. M. Sletov
Full Text: PDF (57 kB)
The nature of the deep levels responsible for photoelectric memory in GaAs/AlGaAs multilayer quantum-well structures
V. N. Ovsyuk, M. A. Dem'yanenko, V. V. Shashkin, and A. I. Toropov
Full Text: PDF (113 kB)
LOW-DIMENSIONAL SYSTEMS
Weak localization in p-type quantum wells
N. S. Averkiev, L. E. Golub, and G. E. Pikus
Full Text: PDF (238 kB)
Capacitance-voltage profiling of Au/n-GaAs Schottky barrier structures containing a layer of self-organized InAs quantum dots
P. N. Brunkov, A. A. Suvorova, N. A. Bert, A. R. Kovsh, A. E. Zhukov, A. Yu. Egorov, V. M. Ustinov, A. F. Tsatsul'nikov, N. N. Ledentsov, P. S. Kop'ev, S. G. Konnikov, L. Eaves, and P. S. Main
Full Text: PDF (297 kB)
Electron-hole Coulomb interaction in InGaN quantum dots
V. E. Bugrov and O. V. Konstantinov
Full Text: PDF (119 kB)
Shallow acceptors in strained multiquantum-well Ge/Ge1 ��� xSix heterostructures
V. Ya. Aleshkin, V. I. Gavrilenko, I. V. Erofeeva, D. V. Kozlov, M. D. Moldavskaya, and O. A. Kuznetsov
Full Text: PDF (119 kB)
Potential difference and photovoltaic effect arising from distortion of the electron wave function in a GaAs quantum well with a thin AlGaAs barrier
Yu. Pozhela and K. Pozhela
Full Text: PDF (114 kB)
Effect of partial ordering of a two-dimensional system of scatterers on the anisotropy of its kinetic coefficients
N. S. Averkiev, A. M. Monakhov, A. Yu. Shik, and P. M. Koenraad
Full Text: PDF (86 kB)
Polarization of in-plane photoluminescence from InAs / Ga(In)As quantum-well layers grown by metallorganic vapor-phase epitaxy
V. Ya. Aleshkin, B. N. Zvonkov, I. G. Malkina, Yu. N. Saf'yanov, A. L. Chernov, and D. O. Filatov
Full Text: PDF (94 kB)
AMORPHOUS,GLASSY,AND POROUS SEMICONDUCTORS
Doping and impurity compensation by ion implantation in a-SiGe films
A. V. Ershov, A. I. Mashin, and A. F. Khokhlov
Full Text: PDF (76 kB)
Long-term structural relaxation and photoinduced degradation in a-Si : H
K. V. Kougia and A. B. Pevtsov
Full Text: PDF (63 kB)
Heterogeneity and photoconductivity kinetics in amorphous hydrogenated silicon
K. V. Kougia, E. I. Terukov, and V. Fus
Full Text: PDF (55 kB)
Relaxation of photoinduced metastable states in a-Si:H films deposited at high temperatures
I. A. Kurova, N. N. Ormont, O. A. Golikova, and M. M. Kazanin
Full Text: PDF (61 kB)
PHYSICS OF SEMICONDUCTOR DEVICES
Molecular beam epitaxy of alternating-strain ZnSe-based multilayer heterostructures for blue-green lasers
S. V. Ivanov, A. A. Toropov, S. V. Sorokin, T. V. Shubina, N. D. Il'inskaya, A. V. Lebedev, I. V. Sedova, P. S. Kop'ev, Zh. I. Alferov, H.-J. Lugauer, G. Reuscher, M. Keim, F. Fischer, A. Waag, and G. Landwehr
Full Text: PDF (227 kB)The content contained herein is maintained and curated by the Preservation Department.This record is revised and maintained by the content administrators from the Cataloging & Metadata Department
Semiconductors V. 32, I. 10
No full textSemiconductors -- October 1998
Volume 32, Issue 10, pp. 1029-1140
ATOMIC STRUCTURE AND NON-ELECTRONIC PROPERTIES OF SEMICONDUCTORS
Activation and distribution of silicon implanted in gallium arsenide as a result of isothermal radiation annealing
V. M. Ardyshev and M. V. Ardyshev
Full Text: PDF (84 kB)
Equilibrium of native point defects in tin dioxide
K. P. Bogdanov, D. Ts. Dimitrov, O. F. Lutskaya, and Yu. M. Tairov
Full Text: PDF (76 kB)
Arsenic cluster superlattice in gallium arsenide grown by low-temperature molecular-beam epitaxy
V. V. Chaldyshev, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin, N. A. Bert, A. E. Kunitsyn, Yu. G. Musikhin, V. V. Tret'yakov, and P. Werner
Full Text: PDF (740 kB)
ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS
Photoconductivity of copper-compensated gallium phosphide
N. N. Pribylov, S. I. Rembeza, A. I. Spirin, V. A. Buslov, and S. A. Sushkov
Full Text: PDF (94 kB)
Accumulation of electrons in GaAs layers grown at low temperatures and containing arsenic clusters
P. N. Brunkov, V. V. Chaldyshev, N. A. Bert, A. A. Suvorova, S. G. Konnikov, A. V. Chernigovskii, V. V. Preobrazhenskii, M. A. Putyato, and B. R. Semyagin
Full Text: PDF (297 kB)
Study of GaN thin layers subjected to high-temperature rapid thermal annealing
N.I. Katsavets, G. M. Laws, I. Harrison, E. C. Larkins, T. M. Benson, T. S. Cheng, and C. T. Foxon
Full Text: PDF (83 kB)
Nitrogen divacancies — the possible cause of the "yellow band" in the luminescence spectra of GaN
A. É. Yunovich
Full Text: PDF (60 kB)
A new recombination center in heavily doped GaAs : Zn grown by liquid-phase epitaxy
K. S. Zhuravlev, T. S. Shamirzaev, N. A. Yakusheva, and I. P. Petrenko
Full Text: PDF (104 kB)
Effect of In doping on the kinetic coefficients in solid solutions of the system (PbzSn1 – z)0.95Ge0.05Te
S. A. Nemov, V. I. Proshin, and S. M. Nakhmanson
Full Text: PDF (74 kB)
Differential methods for determination of deep-level parameters from recombination currents of p–n junctions
S. V. Bulyarskii, N. S. Grushko, and A. V. Lakalin
Full Text: PDF (109 kB)
Experimental corrections for the hot hole distribution function in germanium in crossed electric and magnetic fields
V. N. Tulupenko
Full Text: PDF (90 kB)
Influence of nonuniform spatial distribution of nonequilibrium carriers on the edge emission spectra of direct-gap semiconductors
P. G. Lukashevich
Full Text: PDF (60 kB)
SEMICONDUCTORS STRUCTURES,INTERFACES,AND SURFACES
Optoelectronic phenomena in GaAs and GaP layers prepared by nitrogen treatment
V. F. Agekyan, V. I. Ivanov-Omskii, V. N. Knyazevskii, Yu. V. Rud', and V. Yu. Rud'
Full Text: PDF (46 kB)
Photoelectric properties of GaN/GaP heterostructures
V. M. Botnaryuk, S. D. Raevskii, V. V. Bel'kov, Yu. V. Zhilyaev, Yu. V. Rud', L. M. Fedorov, and V. Yu. Rud'
Full Text: PDF (79 kB)
Photoluminescence of the space charge region of metal–zinc selenide contacts
V. P. Makhnii and M. M. Sletov
Full Text: PDF (57 kB)
The nature of the deep levels responsible for photoelectric memory in GaAs/AlGaAs multilayer quantum-well structures
V. N. Ovsyuk, M. A. Dem'yanenko, V. V. Shashkin, and A. I. Toropov
Full Text: PDF (113 kB)
LOW-DIMENSIONAL SYSTEMS
Weak localization in p-type quantum wells
N. S. Averkiev, L. E. Golub, and G. E. Pikus
Full Text: PDF (238 kB)
Capacitance-voltage profiling of Au/n-GaAs Schottky barrier structures containing a layer of self-organized InAs quantum dots
P. N. Brunkov, A. A. Suvorova, N. A. Bert, A. R. Kovsh, A. E. Zhukov, A. Yu. Egorov, V. M. Ustinov, A. F. Tsatsul'nikov, N. N. Ledentsov, P. S. Kop'ev, S. G. Konnikov, L. Eaves, and P. S. Main
Full Text: PDF (297 kB)
Electron-hole Coulomb interaction in InGaN quantum dots
V. E. Bugrov and O. V. Konstantinov
Full Text: PDF (119 kB)
Shallow acceptors in strained multiquantum-well Ge/Ge1 – xSix heterostructures
V. Ya. Aleshkin, V. I. Gavrilenko, I. V. Erofeeva, D. V. Kozlov, M. D. Moldavskaya, and O. A. Kuznetsov
Full Text: PDF (119 kB)
Potential difference and photovoltaic effect arising from distortion of the electron wave function in a GaAs quantum well with a thin AlGaAs barrier
Yu. Pozhela and K. Pozhela
Full Text: PDF (114 kB)
Effect of partial ordering of a two-dimensional system of scatterers on the anisotropy of its kinetic coefficients
N. S. Averkiev, A. M. Monakhov, A. Yu. Shik, and P. M. Koenraad
Full Text: PDF (86 kB)
Polarization of in-plane photoluminescence from InAs / Ga(In)As quantum-well layers grown by metallorganic vapor-phase epitaxy
V. Ya. Aleshkin, B. N. Zvonkov, I. G. Malkina, Yu. N. Saf'yanov, A. L. Chernov, and D. O. Filatov
Full Text: PDF (94 kB)
AMORPHOUS,GLASSY,AND POROUS SEMICONDUCTORS
Doping and impurity compensation by ion implantation in a-SiGe films
A. V. Ershov, A. I. Mashin, and A. F. Khokhlov
Full Text: PDF (76 kB)
Long-term structural relaxation and photoinduced degradation in a-Si : H
K. V. Kougia and A. B. Pevtsov
Full Text: PDF (63 kB)
Heterogeneity and photoconductivity kinetics in amorphous hydrogenated silicon
K. V. Kougia, E. I. Terukov, and V. Fus
Full Text: PDF (55 kB)
Relaxation of photoinduced metastable states in a-Si:H films deposited at high temperatures
I. A. Kurova, N. N. Ormont, O. A. Golikova, and M. M. Kazanin
Full Text: PDF (61 kB)
PHYSICS OF SEMICONDUCTOR DEVICES
Molecular beam epitaxy of alternating-strain ZnSe-based multilayer heterostructures for blue-green lasers
S. V. Ivanov, A. A. Toropov, S. V. Sorokin, T. V. Shubina, N. D. Il'inskaya, A. V. Lebedev, I. V. Sedova, P. S. Kop'ev, Zh. I. Alferov, H.-J. Lugauer, G. Reuscher, M. Keim, F. Fischer, A. Waag, and G. Landwehr
Full Text: PDF (227 kB)Archived web conten
Semiconductors V. 35, I. 05
No full textSemiconductors -- May 2001
Volume 35, Issue 5, pp. 491-611
ATOMIC STRUCTURE AND NONELECTRONIC PROPERTIES OF SEMICONDUCTORS
Oscillatory "Reactions" Involving the Oxygen and Carbon Background Impurities in Silicon Undergoing Heat Treatment
V. V. Lukjanitsa
pp. 491-498 Full Text: PDF (114 kB)
ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS
Thermal Conductivity and the Wiedemann–Franz Relation in Melts of Indium and Gallium Antimonides
Ya. B. Magomedov and A. R. Bilalov
pp. 499-501 Full Text: PDF (43 kB)
Specific Features of Photoconductivity in Thin n-PbTe:Ga Epilayers
B. A. Akimov, V. A. Bogoyavlenskii, L. I. Ryabova, and V. N. Vasil'kov
pp. 502-505 Full Text: PDF (61 kB)
Dynamic Effect of a Constant Electric Field on the Kinetics of Photons Interacting with Electrons in a Semiconductor
R. Kh. Amirov and V. N. Gusyatnikov
pp. 506-511 Full Text: PDF (142 kB)
Studies of the Infrared Luminescence of ZnSe Doped with Copper and Oxygen
N. K. Morozova, I. A. Karetnikov, V. V. Blinov, and E. M. Gavrishchuk
pp. 512-515 Full Text: PDF (51 kB)
On the Origin of the Luminescence Band with hnum = 1.5133 eV in Gallium Arsenide
K. D. Glinchuk, N. M. Litovchenko, A. V. Prokhorovich, and O. N. Stril'chuk
pp. 516-519 Full Text: PDF (62 kB)
BeCdSe: A New Material for the Active Region in Devices Operating in the Blue–Green Region of the Spectrum
O. V. Nekrutkina, S. V. Sorokin, V. A. Kaigorodov, A. A. Sitnikova, T. V. Shubina, A. A. Toropov, S. V. Ivanov, P. S. Kop'ev, G. Reuscher, V. Wagner, J. Geurts, A. Waag, and G. Landwehr
pp. 520-524 Full Text: PDF (95 kB)
SEMICONDUCTOR STRUCTURES, INTERFACES, AND SURFACES
Method for Determining the Stoichiometric Composition of a Mercury Cadmium Telluride Solid Solution from Capacitance–Voltage Characteristics
I. M. Ivankiv, A. M. Yafyasov, V. B. Bogevol'nov, and A. D. Perepelkin
pp. 525-528 Full Text: PDF (51 kB)
Mechanism of the Current Flow in Pd–(Heavily Doped p-AlxGa1 – xN) Ohmic Contact
T. V. Blank, Yu. A. Goldberg, E. V. Kalinina, O. V. Konstantinov, A. E. Nikolaev, A. V. Fomin, and A. E. Cherenkov
pp. 529-532 Full Text: PDF (60 kB)
Thermodynamic Analysis of the Growth of GaAsN Ternary Compounds by Molecular Beam Epitaxy
V. A. Odnoblyudov, A. R. Kovsh, A. E. Zhukov, N. A. Maleev, E. S. Semenova, and V. M. Ustinov
pp. 533-538 Full Text: PDF (67 kB)
An Analysis of the Charge-Transport Mechanisms Defining the Reverse Current–Voltage Characteristics of the Metal–GaAs Barriers
S. V. Bulyarskii and A. V. Zhukov
pp. 539-542 Full Text: PDF (67 kB)
LOW-DIMENSIONAL SYSTEMS
Photoelectric Spectroscopy of InAs/GaAs Quantum Dot Heterostructures in a Semiconductor/Electrolyte System
I. A. Karpovich, A. P. Gorshkov, S. B. Levichev, S. V. Morozov, B. N. Zvonkov, and D. O. Filatov
pp. 543-549 Full Text: PDF (104 kB)
Manifestation of the Upper Hubbard Band in the Electrical Conductivity of Two-Dimensional p-GaAs–AlGaAs Structures
N. V. Agrinskaya, Yu. L. Ivanov, V. M. Ustinov, and D. A. Poloskin
pp. 550-553 Full Text: PDF (61 kB)
Superlattice Conductivity under the Action of a Nonlinear Electromagnetic Wave
D. V. Zav'yalov and S. V. Kryuchkov
pp. 554-556 Full Text: PDF (42 kB)
Nonlinear Interaction of Waves in a Semiconductor Superlattice
A. A. Bulgakov and O. V. Shramkova
pp. 557-564 Full Text: PDF (97 kB)
The Distribution Function of Hot Charge Carriers under Conditions of Resonance Scattering
A. A. Prokof'ev, M. A. Odnoblyudov, and I. N. Yassievich
pp. 565-572 Full Text: PDF (102 kB)
Electron Transport in Silicon Carbide Natural Superlattices under the Wannier–Stark Quantization Conditions: Basic Issues and Application Prospects
V. I. Sankin and P. P. Shkrebii
pp. 573-578 Full Text: PDF (129 kB)
AMORPHOUS, VITREOUS, AND POROUS SEMICONDUCTORS
Silicon Network in a-Si:H Films Containing Ordered Inclusions
O. A. Golikova, E. V. Bogdanova, M. M. Kazanin, A. N. Kuznetsov, V. A. Terekhov, V. M. Kashkarov, and O. V. Ostapenko
pp. 579-582 Full Text: PDF (61 kB)
Excitation of Luminescence in Porous Silicon with Adsorbed Ozone Molecules
S. N. Kuznetsov, V. B. Pikulev, A. A. Saren, Yu. E. Gardin, and V. A. Gurtov
pp. 583-587 Full Text: PDF (66 kB)
Drift Mobility of Carriers in Porous Silicon
N. S. Averkiev, L. P. Kazakova, É. A. Lebedev, and N. N. Smirnova
pp. 588-590 Full Text: PDF (39 kB)
The Effect of Bombardment with Carbon Ions on the Nanostructure of Diamond-like Films
I. A. Faizrakhmanov, V. V. Bazarov, V. A. Zhikharev, and I. B. Khaibullin
pp. 591-597 Full Text: PDF (93 kB)
PHYSICS OF SEMICONDUCTOR DEVICES
Light Emitting Diodes for the Spectral Range lambda = 3.3–4.3 µm Fabricated from InGaAs and InAsSbP Solid Solutions: Electroluminescence in the Temperature Range of 20–180°C (Part 21)
M. Aidaraliev, N. V. Zotova, S. A. Karandashev, B. A. Matveev, M. A. Remennyi, N. M. Stus', and G. N. Talalakin
pp. 598-604 Full Text: PDF (106 kB)
A New Structure of the CdS-Based Surface-Barrier Ultraviolet Sensor
S. Yu. Pavelets, Yu. N. Bobrenko, A. V. Komashchenko, and T. E. Shengeliya
pp. 605-607 Full Text: PDF (56 kB)
Impact Ionization Wave Breakdown of Drift Step Recovery Diodes
V. A. Kozlov, A. F. Kardo-Sysoev, and V. I. Brylevskii
pp. 608-611 Full Text: PDF (58 kB)Archived web conten
- …
