602 research outputs found
Hohenbuehelia filicina Bulyonk., D. Ageev et L. B. Kalinina 2023, sp. nov.
Hohenbuehelia filicina Bulyonk., D. Ageev et L.B. Kalinina sp. nov. (Fig. 1) MycoBank #847050 Diagnosis:—small, uniformly white pleurotoid basidiomata with round or auriculiform pileus and eccentric or lateral stipe up to 25 mm long and live rhizomes of ostrich ferns as substrate differ the H. filicina from other known species of the genus. Holotype:— RussIA, Southwestern Siberia, Novosibirsk Oblast, vicinity of Akademgorodok, N54.850716°, E83.130592°, 30 July 2022, D.Ageev LE F-332234 (holotype LE F!, GenBank nrITS – OQ102434), on live Matteuccia struthiopteris ferns. Etymology:—belonging to ferns, reflecting the ecology of the type species. Basidiomata small. Pileus round or auriсuliform, 5–10 mm in diameter, planoconvex to plane with slightly incurved margin, sometimes with a slight depression, white (RAL 9003). Lamellae crowded, narrow, whitish (RAL 9016), somewhat beige in exsiccate (RAL 9010, 9001). Stipe lateral or strongly eccentric, cylindrical, 3–25 mm long, 1.5–2.5 mm wide, concolorous with the pileus (Fig. 1b, 1c, 1d). Flesh white (RAL 9003). Odor mild, fungal, taste unrecorded. Basidiospores (3.2) 3.21–3.7 (3.9) × (2.3) 2.4–3.06 (3.1) µm (Q = 1.2–1.38, N = 33), broadly ellipsoid to subglobose, smooth, hyaline, inamyloid, very scarce in all examined specimens (Fig. 1e 4). Lamellar trama of hyaline, cylindrical subparallel hyphae 3–6 µm wide; subhymenium of interwoven hyphae 2–3 µm wide. Basidia narrowly clavate to almost cylindrical, 4-spored (12.4) 12.8–15.8 (16.4) × (2.9) 3.1– 4.1 (4.3) µm (Fig. 1e 3). Cheilocystidia abundant, narrow, cylindrical or slightly capitulate, appearing as a frill of extensions of lamellar trama (11.7) 13.6–25.3 (30.7) × (1.7) 1.9–2.7 (13.2) µm (Fig.1e 5). Pleurocystidia rather numerous, typical for the genus: narrowly fusiform to fusiform, occasionally with constrictions in the lower half, thick-walled with 2–3 µm thick walls, with a pointed apex encrusted with transparent resinous material slightly yellowing in KOH, (35) 41.6–53 (128.3) × (0.6) 7– 9.7 (15.6) µm (Fig. 1e1). Pileipellis a cutis of filamentous, loosely interwoven hyphae 1.2–2.4 µm wide (Fig.1e 2). Clamp connections present in all tissues. Habitat and known distribution:—Solitary and in small groups on bases (rhizomes) of live Matteuccia struthiopteris ferns, growing from the live central part, possibly parasitic; in native old-stand mixed, predominantly birch (Betula pendula) and aspen (Populus tremula) forests with tall forb herbaceous layer, preferring damp, shaded ravines and hollows; humidity requirements may be a limiting factor. Known from the Novosibirsk Oblast, Southwestern Siberia, Russia, locally not uncommon; possibly widely distributed but overlooked due to size, unconventional ecology and general rarity. Material examined:— RussIA, Southwestern Siberia, Novosibirsk Oblast, vicinity of Akademgorodok, N54.849289°, E83.132515°, 21 June 2020, D. Ageev LE F-332233 (GenBank nrITS—OQ102433), on bases of live Matteuccia struthiopteris ferns; same location, 22 July 2019, T. Bulyonkova LE F-332248.Published as part of Kalinina, Lyudmila B., Ageev, Dmitry V. & Bulyonkova, Tatiana M., 2023, Hohenbuehelia filicina sp. nov. (Agaricales, Basidiomycota), from Southwestern Siberia, Russia, pp. 272-280 in Phytotaxa 600 (5) on pages 275-277, DOI: 10.11646/phytotaxa.600.5.2, http://zenodo.org/record/812936
FIGURE 1. a—habitat. b in Hohenbuehelia filicina sp. nov. (Agaricales, Basidiomycota), from Southwestern Siberia, Russia
FIGURE 1. a—habitat. b—basidiomata (LE F-332233). c—basidiomata. d—basidioma in situ (LE F-332248). e—microstructures: 1— pleurocystidia, 2—pileipellis hyphae, 3—basidia, also basidioles (without sterigmata) shown, 4—spores, 5—cheilocystidia.Published as part of Kalinina, Lyudmila B., Ageev, Dmitry V. & Bulyonkova, Tatiana M., 2023, Hohenbuehelia filicina sp. nov. (Agaricales, Basidiomycota), from Southwestern Siberia, Russia, pp. 272-280 in Phytotaxa 600 (5) on page 276, DOI: 10.11646/phytotaxa.600.5.2, http://zenodo.org/record/812936
Vertex Set Partitions Preserving Conservativeness
AbstractLet G be an undirected graph and P={X1, …, Xn} be a partition of V(G). Denote by G/P the graph which has vertex set {X1, …, Xn}, edge set E, and is obtained from G by identifying vertices in each class Xi of the partition P. Given a conservative graph (G, w), we study vertex set partitions preserving conservativeness, i.e., those for which (G/P, w) is also a conservative graph. We characterize the conservative graphs (G/P, w), where P is a terminal partition of V(G) (a partition preserving conservativeness which is not a refinement of any other partition of this kind). We prove that many conservative graphs admit terminal partitions with some additional properties. The results obtained are then used in new unified short proofs for a co-NP characterization of Seymour graphs by A. A. Ageev, A. V. Kostochka, and Z. Szigeti (1997, J. Graph Theory34, 357–364), a theorem of E. Korach and M. Penn (1992, Math. Programming55, 183–191), a theorem of E. Korach (1994, J. Combin. Theory Ser. B62, 1–10), and a theorem of A. V. Kostochka (1994, in “Discrete Analysis and Operations Research. Mathematics and its Applications (A. D. Korshunov, Ed.), Vol. 355, pp. 109–123, Kluwer Academic, Dordrecht)
High resolution electromagnetic methods and low frequency dispersion of rock conductivity
The influence of frequency dispersion of conductivity (induced polarization) of rocks on the results of electromagnetic (EM) sounding was studied on the basis of calculation of electric field of vertical magnetic dipole above horizontally layered polarizable sections. Frequency dispersion was approximated by the Debye formula. Polarizable homogeneous halfspace, two, three and multilayered sections were analyzed in frequency and time domains. The calculations for different values of chargeability and time constants of polarization were performed. In the far zone of a source, the IP of rocks led to quasi-wave phenomena. They produced rapid fluctuations of frequency and transient sounding curves (interference phenomena, multireflections in polarizable layers). In the case of transient sounding in the near zone of a source quasistatic distortions prevailed, caused by the counter electromotive force arising in polarizable layers which may lead to strong changes in transient curves. In some cases quasiwave and quasistatic phenomena made EM sounding curves non-interpretable in the class of quasistationary curves over non-dispersive sections. On the other hand, they could increase the resolution and depth of investigation of EM sounding. This was confirmed by an experience of "high-resolution" electroprospecting in Russia. The problem of interpretation of EM sounding data in polarizable sections is nonunique. To achieve uniqueness it is probably necessary to complement them by soundings of other type.JCR Journalope
ON THE ISSUE OF FOUNDATIONS, TARGETS AND LIMITS OF CONSTITUTIONAL LIMITATION OF THE BASIC HUMAN AND CIVIL RIGHTS AND FREEDOMS
The article presents the confirmation of the research results obtained by the author in the course of dissertation research. It contains the characteristics of foundations, targets and limits of the constitutional limitation of the basic human and civil rights and freedoms, as well as the analysis of various points of view on this issue
Погребения Гераев в архитектурном комплексе Мурад Рейса / The Gerays burial in the architectural complex of Murad Reis
В настоящей работе рассматриваются захоронения Гераев на острове Родос в контексте архитектурного комплекса Мурад Рейса. В ней дается описание этого комплекса с выборочной библиографией и краткой историей изучения. В рамках публикации приводятся все выявленные на данный момент погребальные памятники Гераев в составе комплекса, показывается возможность и перспективность их дальнейшего изучения. / The paper deals with Gerays graveside on the island of Rhodes in the context of Murat Reis architectural complex. It describes the complex and provides selective bibliography and concise history of studying it. The author lists all Gerays burial monuments of the complex discovered to date, shows the possibilities and prospects of their further examination
Operation Management Objectives in Service Operation
The goal of this Bachelor Thesis is to explore the changes of the five operational management objectives at the transformation of service operation after the implementation of cloud computing solutions. The documents begin with a description of features in the cloud computing service models. Further, it focuses on operational strategy and the role of five performance objectives in competitive advantage. In the practical part, the thesis represents the framework on how to track changes in five performance objectives after the implementation of technology and analyzing of the company executed by the framework developed in the thesis. As a result of the research, the bachelor thesis evidences the relationships of the five operations performance objectives from a longitudinal perspective. Furthermore, this approach represents a framework to track service operational performance for practitioners.The goal of this Bachelor Thesis is to explore the changes of the five operational management objectives at the transformation of service operation after the implementation of cloud computing solutions. The documents begin with a description of features in the cloud computing service models. Further, it focuses on operational strategy and the role of five performance objectives in competitive advantage. In the practical part, the thesis represents the framework on how to track changes in five performance objectives after the implementation of technology and analyzing of the company executed by the framework developed in the thesis. As a result of the research, the bachelor thesis evidences the relationships of the five operations performance objectives from a longitudinal perspective. Furthermore, this approach represents a framework to track service operational performance for practitioners
Odolné systémy: Budování spolehlivosti prostřednictvím observability, reakce na incidenty a řízení problémů
This Master’s Thesis introduces the Fault Tolerance Production System Framework (FT-PSF), a practical model for constructing fault-tolerant systems as an iterative operational process. The framework defines a closed reliability loop—spanning Critical User Journeys (CUJs), Service Level Indicators (SLIs), Service Level Objectives (SLOs), and Error Budgets—to quantify and act on real user impact. It integrates observability, incident response, and structured postmortem analysis into a unified reliability workflow. Applied as an explanatory framework to SAP Concur’s production environment, FT-PSF offers a systems-level understanding of how fault tolerance emerges through layered observability, continuous feedback, and operational discipline.Tato diplomová práce představuje rámec Fault Tolerance Production System Framework (FT-PSF) – praktický model, který chápe budování fault-tolerantních systémů jako iterativní provozní proces. Rámec vymezuje uzavřenou smyčku spolehlivosti – od kritických uživatelských cest (Critical User Journeys, CUJ) přes ukazatele úrovně služeb (Service Level Indicators, SLI) a cíle úrovně služeb (Service Level Objectives, SLO) až k rozpočtům chyb (Error Budgets) – a umožňuje tak kvantifikovat a řízeně ovlivňovat reálný dopad na uživatele. FT-PSF sjednocuje observabilitu, reakci na incidenty a strukturovanou post-mortem analýzu do jednoho uceleného workflow spolehlivosti. Aplikace tohoto rámce na produkční prostředí SAP Concur ukazuje, jak se odolnost systémů rodí díky vrstvené observabilitě, kontinuální zpětné vazbě a důsledné provozní disciplíně
Physics of the Solid State V. 43, I. 10
Physics of the Solid State -- October 2001
Volume 43, Issue 10, pp. 1801-1998
METALS AND SUPERCONDUCTORS
Analysis of Dispersion of Long-Wavelength Optical Phonons in Zinc with the Help of Light Scattering
G. A. Bolotin, Yu. I. Kuz'min, Yu. V. Knyazev, Yu. S. Ponosov, and C. Thomsen
pp. 1801-1806 Full Text: PDF (83 kB)
A High-Modulus Metastable Phase in Mg–Ni–Y Alloys
N. P. Kobelev, Ya. M. Soifer, G. E. Abrosimova, I. G. Brodova, and A. N. Manukhin
pp. 1807-1810 Full Text: PDF (65 kB)
Thermal Conductivity of the "Light" Heavy-Fermion Compound YbIn0.7Ag0.3Cu4
A. V. Golubkov, L. S. Parfen'eva, I. A. Smirnov, H. Misiorek, J. Mucha, and A. Jezowski
pp. 1811-1815 Full Text: PDF (80 kB)
An Exact Solution to the Problem of Current Transport through the Grain Boundary in a Metal
A. V. Latyshev and A. A. Yushkanov
pp. 1816-1822 Full Text: PDF (80 kB)
Structure of the Abrikosov Vortex Lattice in a Thin Superconducting Film in a Parallel Magnetic Field
D. A. Luzhbin
pp. 1823-1826 Full Text: PDF (52 kB)
Pinning of Vortices by the Domain Structure in a Two-Layered Type II Superconductor–Ferromagnet System
Yu. I. Bespyatykh, W. Wasilevski, M. Gajdek, I. P. Nikitin, and S. A. Nikitov
pp. 1827-1833 Full Text: PDF (90 kB)
The Nernst–Ettingshausen Coefficient in Conductors with a Narrow Conduction Band: Analysis and Application of Its Results to HTSC Materials
N. V. Ageev and V. É. Gasumyants
pp. 1834-1844 Full Text: PDF (120 kB)
Superconductivity of (Sn1 – zPbz)1 – xInxTe Alloys
R. V. Parfen'ev, D. V. Shamshur, and S. A. Nemov
pp. 1845-1849 Full Text: PDF (72 kB)
SEMICONDUCTORS AND DIELECTRICS
Thermopower of a Semiconductor Film with Parabolic Potential in a Strong Magnetic Field
F. M. Gashimzade, A. M. Babaev, and Kh. A. Gasanov
pp. 1850-1852 Full Text: PDF (48 kB)
The Role of Extended Defects in the Formation of the Spectrum of Electronic States in High-Purity p-CdTe Polycrystals with Stoichiometric Composition
V. S. Bagaev, V. V. Zaitsev, Yu. V. Klevkov, S. A. Medvedev, E. E. Onishchenko, M. L. Skorikov, and V. A. Tsvetkov
pp. 1853-1859 Full Text: PDF (87 kB)
Temperature Effect on Spatial Correlations of Impurity Ions in HgSe : Fe Crystals
V. M. Mikheev
pp. 1860-1866 Full Text: PDF (78 kB)
A Tight-Binding Representation of Electron–Hole Exchange Interaction in Semiconductors
S. V. Goupalov and E. L. Ivchenko
pp. 1867-1875 Full Text: PDF (108 kB)
Polarized ARPES Spectra of Undoped Cuprates
V. A. Gavrichkov, A. A. Borisov, and S. G. Ovchinnikov
pp. 1876-1884 Full Text: PDF (145 kB)
Luminescence of CsPbCl3 Microcrystals in CsCl:Pb and PbCl2:Cs Crystals under Synchrotron Excitation
A. Voloshinovskii, S. Myagkota, A. Gloskovskii, and S. Zazubovich
pp. 1885-1891 Full Text: PDF (101 kB)
DEFECTS, DISLOCATIONS, AND PHYSICS OF STRENGTH
Inherent Submicroporosity and Crystallization of Amorphous Alloys
V. I. Betekhtin, A. G. Kadomtsev, and O. V. Tolochko
pp. 1892-1897 Full Text: PDF (132 kB)
Electromagnetic Emission of Mobile Dislocation Segments in an Ionic Crystal
O. V. Charkina and K. A. Chishko
pp. 1898-1904 Full Text: PDF (81 kB)
Spin-Flip Scattering of Conduction Electrons by Dislocations in a Metal
V. M. Zholkevskii and G. A. Denisenko
pp. 1905-1908 Full Text: PDF (48 kB)
Analysis of Strain Hardening of Crystals under Large Plastic Strains
G. A. Malygin
pp. 1909-1916 Full Text: PDF (96 kB)
The Hardening and Loss of Strength of Thin Surface Layers of LiF Monocrystals and Zirconium Ceramics under Conditions of Cyclic Nanoindenting
Yu. I. Golovin, V. I. Ivolgin, V. V. Korenkov, and B. J. Farber
pp. 1917-1922 Full Text: PDF (105 kB)
MAGNETISM AND FERROELECTRICITY
Skin Effect under the Conditions of Ferromagnetic and Spin-Wave Resonance
R. N. Nosov and D. I. Sementsov
pp. 1923-1926 Full Text: PDF (56 kB)
Drift Motion of Domain Boundaries in Garnet Ferrites in an Acoustic Wave Field
V. S. Gerasimchuk and A. A. Shitov
pp. 1927-1933 Full Text: PDF (92 kB)
A Magnetic Resonance Study of La1 – x Srx MnO3 Manganites
N. A. Viglin, S. V. Naumov, and Ya. M. Mukovskii
pp. 1934-1940 Full Text: PDF (102 kB)
Growth of Nanosized MnAs/Si(111) Magnetoelectronic Heterostructures and Their Magnetooptical Study
A. G. Banshchikov, A. V. Kimel', R. V. Pisarev, A. A. Rzhevskii, N. S. Sokolov, A. Keen, Th. Rasing, Ahsan M. Nazmul, and M. Tanaka
pp. 1941-1947 Full Text: PDF (256 kB)
Nonlinear Dielectric Susceptibility of Dipole Impurities Dissolved in the Lattice of Quantum Paraelectrics
S. A. Prosandeev
pp. 1948-1951 Full Text: PDF (50 kB)
Temperature Behavior of the Order Parameter in Pb5Ge3O11
V. A. Vazhenin, V. B. Guseva, V. Ya. Shur, E. V. Nikolaeva, and M. Yu. Artemov
pp. 1952-1957 Full Text: PDF (89 kB)
Behavior of a Lead Scandium Tantalate Ferroelectric in an AC Electric Field
L. S. Kamzina and N. N. Krainik
pp. 1958-1961 Full Text: PDF (52 kB)
LATTICE DYNAMICS AND PHASE TRANSITIONS
Second-Order Terms in the Phonon–Phason Dynamic Matrix of an Icosahedral Quasicrystal
S. B. Rochal
pp. 1962-1967 Full Text: PDF (69 kB)
Structural Phase Transitions in CdTiO3
Yu. V. Kabirov, B. S. Kul'buzhev, and M. F. Kupriyanov
pp. 1968-1971 Full Text: PDF (57 kB)
LOW-DIMENSIONAL SYSTEMS AND SURFACE PHYSICS
Electron-Stimulated Desorption of Europium Atoms from an Oxidized Tungsten Surface
V. N. Ageev, Yu. A. Kuznetsov, and N. D. Potekhina
pp. 1972-1978 Full Text: PDF (100 kB)
Sensor Studies of the Initial Stages of the Cadmium Telluride Film Formation through Vapor Deposition
A. P. Belyaev, V. P. Rubets, and S. A. Kukushkin
pp. 1979-1981 Full Text: PDF (121 kB)
FULLERENES AND ATOMIC CLUSTERS
Theoretical Study of the Toroidal Forms of Carbon and Related Endohedral Complexes with Lithium
A. A. Kuzubov, P. V. Avramov, S. G. Ovchinnikov, S. A. Varganov, and F. N. Tomilin
pp. 1982-1988 Full Text: PDF (152 kB)
Analysis of the Parameters of a Smeared Orientational Transition at 250–260 K in C60 Crystals
G. A. Malygin
pp. 1989-1994 Full Text: PDF (71 kB)
Relationships for Total Energies of Cn Fullerenes and Their Derivatives Containing Nitrogen and Boron Atoms in the Polyhedral Carbon Cage
I. V. Stankevich and R. Seto
pp. 1995-1998 Full Text: PDF (58 kB)Archived web conten
Semiconductors V. 37, I. 04
Semiconductors -- April 2003
Volume 37, Issue 4, pp. 367-492
ATOMIC STRUCTURE AND NONELECTRONIC PROPERTIES OF SEMICONDUCTORS
Structural Disordering and Viedemann–Franz Relation in Melts of Some II–IV–V2 Semiconductors
Ya. B. Magomedov and M. A. Aidamirov
pp. 367-369 Full Text: PDF (42 kB)
ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS
Effect of Crystallization of Amorphous Vanadium Dioxide Films on the Parameters of a Semiconductor–Metal Phase Transition
V. A. Klimov, I. O. Timofeeva, S. D. Khanin, E. B. Shadrin, A. V. Il'inskii, and F. Silva-Andrade
pp. 370-374 Full Text: PDF (165 kB)
Recombination Current Instability in Epitaxial p+–n Structures with Impurity Atoms Locally Incorporated into the n-type Region and Determination of the Deep Center Parameters
B. S. Muravskii[dagger], O. N. Kulikov, and V. N. Chernyi
pp. 375-379 Full Text: PDF (73 kB)
Optical Reflection in (Pb0.78Sn0.22)1 – xInxTe Solid Solutions with a High Indium Content
A. N. Veis and A. V. Nashchekin
pp. 380-383 Full Text: PDF (226 kB)
Effect of Lattice Deformation on Semiconducting Properties of CrSi2
A. V. Krivosheeva, V. L. Shaposhnikov, A. E. Krivosheev, A. B. Filonov, and V. E. Borisenko
pp. 384-389 Full Text: PDF (109 kB)
Electrical Properties of InAs Irradiated with Protons
V. N. Brudnyi, N. G. Kolin, and A. I. Potapov
pp. 390-395 Full Text: PDF (107 kB)
Influence of Pulsed Laser Radiation on the Morphology and Photoelectric Properties of InSb Crystals
V. A. Gnatyuk and O. S. Gorodnychenko
pp. 396-398 Full Text: PDF (87 kB)
IR Birefringence in Artificial Crystal Fabricated by Anisotropic Etching of Silicon
E. V. Astrova, T. S. Perova, V. A. Tolmachev, A. D. Remenyuk, J. Vij, and A. Moore
pp. 399-403 Full Text: PDF (128 kB)
Energy Levels of Vacancies and Interstitial Atoms in the Band Gap of Silicon
V. V. Lukjanitsa
pp. 404-413 Full Text: PDF (126 kB)
SEMICONDUCTOR STRUCTURES, INTERFACES, AND SURFACES
Photosensitive Structures Based on ZnIn2Se4 Single Crystals
A. A. Vaipolin, Yu. A. Nikolaev, V. Yu. Rud', Yu. V. Rud', and E. I. Terukov
pp. 414-416 Full Text: PDF (48 kB)
Special Features of Electron Scattering at AlxGa1 – xAs/AlAs(001) Interfaces
S. N. Grinyaev, G. F. Karavaev, and V. N. Chernyshov
pp. 417-425 Full Text: PDF (117 kB)
The Charge Accumulation in an Insulator and the States at Interfaces of Silicon-on-Insulator Structures as a Result of Irradiation with Electrons and Gamma-Ray Photons
D. V. Nikolaev, I. V. Antonova, O. V. Naumova, V. P. Popov, and S. A. Smagulova
pp. 426-432 Full Text: PDF (92 kB)
The Effect of Internal Fields on Tunneling Current in Strained GaN/AlxGa1 – xN(0001) Structures
S. N. Grinyaev and A. N. Razzhuvalov
pp. 433-438 Full Text: PDF (81 kB)
Characteristics of Gallium Arsenide Structures and Gunn Devices Based on Them Fabricated Using the Radiation–Thermal Technology
M. V. Ardyshev and V. M. Ardyshev
pp. 439-442 Full Text: PDF (54 kB)
The Influence of Carbon on the Properties of Si/SiGe Heterostructures
M. Ya. Valakh, V. N. Dzhagan, L. A. Matveeva, A. S. Oberemok, B. N. Romanyuk, and V. A. Yukhimchuk
pp. 443-447 Full Text: PDF (69 kB)
Effect of Irradiation with Low-Energy Ar Ions on the Characteristics of the Working and Rear Sides of Single-Crystal GaAs Substrate
A. S. Alalykin, P. N. Krylov, I. V. Fedotova, and A. B. Fedotov
pp. 448-451 Full Text: PDF (56 kB)
Generation–Recombination Centers in CdTe:V
L. A. Kosyachenko, S. Yu. Paranchich, Yu. V. Tanasyuk, V. M. Sklyarchuk, E. F. Sklyarchuk, E. L. Maslyanchuk, and V. V. Motushchuk
pp. 452-455 Full Text: PDF (72 kB)
Special Features of Formation and Characteristics of Ni/21R-SiC Schottky Diodes
V. L. Litvinov, K. D. Demakov, O. A. Ageev, A. M. Svetlichny, R. V. Konakova, P. M. Lytvyn, O. S. Lytvyn, and V. V. Milenin
pp. 456-461 Full Text: PDF (235 kB)
LOW-DIMENSIONAL SYSTEMS
Properties of Ge Nanocrystals Formed by Implantation of Ge+ Ions into SiO2 Films with Subsequent Annealing under Hydrostatic Pressure
I. E. Tyschenko, A. B. Talochkin, A. G. Cherkov, K. S. Zhuravlev, A. Misiuk, M. Voelskow, and W. Skorupa
pp. 462-467 Full Text: PDF (93 kB)
AMORPHOUS, VITREOUS, AND POROUS SEMICONDUCTORS
Laser Ultrasonic Study of Porous Silicon Layers
S. M. Zharkii, A. A. Karabutov, I. M. Pelivanov, N. B. Podymova, and V. Yu. Timoshenko
pp. 468-472 Full Text: PDF (72 kB)
Raman Spectroscopy of Amorphous Carbon Modified with Iron
S. G. Yastrebov, V. I. Ivanov-Omskii, F. Dumitrache, and C. Morosanu
pp. 473-476 Full Text: PDF (52 kB)
Electrolytic Fabrication of Porous Silicon with the Use of Internal Current Source
D. N. Goryachev, L. V. Belyakov, and O. M. Sreseli
pp. 477-481 Full Text: PDF (60 kB)
PHYSICS OF SEMICONDUCTOR DEVICES
3C-SiC p–n Structures Grown by Sublimation on 6H-SiC Substrates
A. A. Lebedev, A. M. Strel'chuk, D. V. Davydov, N. S. Savkina, A. S. Tregubova, A. N. Kuznetsov, V. A. Solov'ev, and N. K. Poletaev
pp. 482-484 Full Text: PDF (53 kB)
Current and Temperature Tuning of Quantum-Well Lasers Operating in 2.0- to 2.4-µm Range
A. P. Astakhova, A. N. Baranov, A. Viset, A. N. Imenkov, N. M. Kolchanova, N. D. Stoyanov, A. Chernyaev, D. A. Yarekha, and Yu. P. Yakovlev
pp. 485-490 Full Text: PDF (80 kB)
PERSONALIA
Vladimir Ivanovich Ivanov-Omskii (dedicated to his 70th birthday)
pp. 491-492 Full Text: PDF (73 kB)Archived web conten
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