1,097 research outputs found
The need for specific approach towards informing members of marginalised groups of their rights: practitioner’s reflections
No full textPlotnikov O. V. The need for specific approach towards informing members of marginalised groups of their rights: practitioner’s reflections / O. V. Plotnikov // ECHR’s Jurisprudence in Digital Era : proceedings of the Int. sci. conf. (Odesa, May 31 – June 1, 2019) / MES of Ukraine, Nat. Univ. “Odes. Acad. of Law”, SRC NALSU ; exec. eds. H. A. Ulianova, V. A. Tuliakov. – Odesa : Publishing house “Helvetika”, 2019. – P. 145-148
The overview of V. A. Plotnikov results
No full textУ статті наводиться огляд результатів В. О. Плотнікова по усередненню звичайних диференціальних включень та диференціальних включень,що підлягають імпульсному впливуВ статье приводится обзор результатов В. А. Плотникова по усреднению обычных дифференциальных включений и дифференциальных включений, подвергающихся импульсному воздействию.This article provides an overview of V. A. Plotnikov's results on averaging of usual differential inclusions and the differential inclusions with impulsive effect
Changes in the structure and function of biological communities in the Aral Sea, with particular reference to the northern part (Small Aral Sea), 1985-1995: A review
No full textN. V. Aladin, A. A. Filippov, I. S. Plotnikov, M. I. Orlova, W. D. William
Investigation of the electromagnetic compatibility of a frequency-controlled electric drive with supercapacitors
No full textIn the paper, the electromagnetic compatibility of a frequency converter with a power supply is investigated. Comparison of the variants of the electric drive with conventional capacitors and supercapacitors, which are connected directly to the DC link of the frequency converter, is given. The simulation results in the MATLAB package and the experimental study of the electric drive with using the power quality analyzer are presented. The paper presents the forms of currents and voltages at the input of the frequency converter, as well as their harmonics composition. Conclusions about the influence of the supercapacitor block on the electromagnetic compatibility of electric drive to the mains are made. © 2018 I.V. Plotnikov and I.S. Uimin.17-08-00188I. V. Plotnikov and I. S. Uimin The reported study was funded by RFBR according to the research project № 17-08-0018
Semiconductors V. 36, I. 08
No full textdc.description[en_US]Semiconductors -- August 2002
Volume 36, Issue 8, pp. 837-951
ATOMIC STRUCTURE AND NONELECTRONIC PROPERTIES OF SEMICONDUCTORS
Measurements of Parameters of the Low-Temperature Molecular-Beam Epitaxy of GaAs
V. V. Preobrazhenskii, M. A. Putyato, and B. R. Semyagin
pp. 837-840 Full Text: PDF (60 kB)
Threshold of Inelastic Strain Formation in Si and GaAs Surface Layers under Multiple Pulsed Laser Irradiation
S. V. Vintsents, A. V. Zoteev, and G. S. Plotnikov
pp. 841-844 Full Text: PDF (58 kB)
Dissociation Energies of a CiCs Complex and the A Center in Silicon
N. I. Boyarkina, S. A. Smagulova, and A. A. Artem'ev
pp. 845-847 Full Text: PDF (46 kB)
ATOMIC STRUCTURE AND NONELECTRONIC PROPERTIES
Initial Stages of Growth of Diamond Island Films on Crystalline Silicon
N. A. Feoktistov, V. V. Afanas'ev, V. G. Golubev, S. A. Grudinkin, S. A. Kukushkin, and V. G. Melekhin
pp. 848-851 Full Text: PDF (141 kB)
ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS
Local Structure of Zinc Impurity Centers in Lead Chalcogenides and Pb1 ��� xSnxTe Solid Solutions
S. A. Nemov and N. P. Seregin
pp. 852-854 Full Text: PDF (100 kB)
Influence of Tellurium Impurity on the Properties of Ga1 ��� XInXAsYSb1 ��� Y (X > 0.22) Solid Solutions
T. I. Voronina, T. S. Lagunova, E. V. Kunitsyna, Ya. A. Parkhomenko, M. A. Sipovskaya, and Yu. P. Yakovlev
pp. 855-862 Full Text: PDF (104 kB)
Optical Properties of Bulk and Epitaxial Unordered GaxIn1 ��� xP Semiconductor Alloys
Ya. I. Vyklyuk, V. G. Deibuk, and S. V. Zolotarev
pp. 863-868 Full Text: PDF (89 kB)
Electrical and Thermoelectric Properties of p-Ag2Te
F. F. Aliev, E. M. Kerimova, and S. A. Aliev
pp. 869-873 Full Text: PDF (74 kB)
Photoconductivity of Coarse-Grained CdTe Polycrystals
S. A. Medvedev, Yu. V. Klevkov, S. A. Kolosov, V. S. Krivobok, and A. F. Plotnikov
pp. 874-877 Full Text: PDF (51 kB)
Time-Resolved Photoluminescence of Polycrystalline GaN Layers on Metal Substrates
A. V. Andrianov, K. Yamada, H. Tampo, H. Asahi, V. Yu. Nekrasov, Z. N. Petrovskaya, O. M. Sreseli, and N. N. Zinov'ev
pp. 878-882 Full Text: PDF (66 kB)
SEMICONDUCTOR STRUCTURES, INTERFACES, AND SURFACES
Low-Threshold Defect Formation and Modification of Ge Surface Layer under Elastic and Elastoplastic Pulsed Laser Effects
S. V. Vintsents, V. B. Zaitsev, A. V. Zoteev, G. S. Plotnikov, A. I. Rodionov, and A. V. Chervyakov
pp. 883-888 Full Text: PDF (79 kB)
Electron Tunneling through a Double Barrier in a Reverse-Biased Metal���Oxide���Silicon Structure
G. G. Kareva, M. I. Vexler, I. V. Grekhov, and A. F. Shulekin
pp. 889-894 Full Text: PDF (89 kB)
LOW-DIMENSIONAL SYSTEMS
Structure of Heterointerfaces and Photoluminescence Properties of GaAs/AlAs Superlattices Grown on (311)A and (311)B Surfaces: Comparative Analysis
G. A. Lyubas, N. N. Ledentsov, D. Litvinov, B. R. Semyagin, I. P. Soshnikov, V. M. Ustinov, V. V. Bolotov, and D. Gerthsen
pp. 895-898 Full Text: PDF (138 kB)
Wavelength of Emission from InGaAsN Quantum Wells as a Function of Composition of the Quaternary Compound
A. E. Zhukov, A. R. Kovsh, E. S. Semenova, V. M. Ustinov, L. Wei, J.-S. Wang, and J. Y. Chi
pp. 899-902 Full Text: PDF (66 kB)
Two-Dimensional p���n Junction under Equilibrium Conditions
A. Sh. Achoyan, A. �. Yesayan, �. M. Kazaryan, and S. G. Petrosyan
pp. 903-907 Full Text: PDF (70 kB)
Calculations of the Charge-Carrier Mobility and the Thermoelectric Figure of Merit for Multiple-Quantum-Well Structures
D. A. Pshenai-Severin and Yu. I. Ravich
pp. 908-915 Full Text: PDF (91 kB)
Nonlinear Response and Nonlinear Coherent Generation in Resonant-Tunneling Diode in a Broad Frequency Range
V. F. Elesin, I. Yu. Kateev, and A. I. Podlivaev
pp. 916-920 Full Text: PDF (61 kB)
Anomalies of the Fractional Quantum Hall Effect in a Wide Ballistic Wire
Z. D. Kvon, E. B. Olshanetsky, A. E. Plotnikov, A. I. Toropov, and J. C. Portal
pp. 921-923 Full Text: PDF (46 kB)
Special Features of Electrical Conductivity in a Parabolic Quantum Well in a Magnetic Field
E. P. Sinyavskii and R. A. Khamidullin
pp. 924-928 Full Text: PDF (59 kB)
Manifestation of A(+) Centers in the Luminescence of Two-Dimensional GaAs/AlGaAs Structures
Yu. L. Ivanov, N. V. Agrinskaya, P. V. Petrov, V. M. Ustinov, and G. �. Tsyrlin
pp. 929-931 Full Text: PDF (43 kB)
One-Dimensional Photonic Crystal Obtained by Vertical Anisotropic Etching of Silicon
V. A. Tolmachev, L. S. Granitsyna, E. N. Vlasova, B. Z. Volchek, A. V. Nashchekin, A. D. Remenyuk, and E. V. Astrova
pp. 932-935 Full Text: PDF (263 kB)
AMORPHOUS, VITREOUS, AND POROUS SEMICONDUCTORS
Gamma-Irradiation-Induced Metastable States of Undoped Amorphous Hydrogenated Silicon
M. S. Ablova, G. S. Kulikov, and S. K. Persheev
pp. 936-940 Full Text: PDF (73 kB)
Fabrication and Properties of Amorphous Hydrogenated Boron Carbide Films
A. S. Anan'ev, O. I. Kon'kov, V. M. Lebedev, A. N. Novokhatski, E. I. Terukov, and I. N. Trapeznikova
pp. 941-943 Full Text: PDF (47 kB)
PHYSICS OF SEMICONDUCTOR DEVICES
Lattice-Matched GaInPAsSb/InAs Structures for Devices of Infrared Optoelectronics
M. Aidaraliev, N. V. Zotova, S. A. Karandashev, B. A. Matveev, M. A. Remennyi, N. M. Stus', G. N. Talalakin, V. V. Shustov, V. V. Kuznetsov, and E. A. Kognovitskaya
pp. 944-949 Full Text: PDF (71 kB)
PERSONALIA
Viktor Il'ich Fistul' (on his 75th birthday)
pp. 950-951 Full Text: PDF (71 kB)dc.description.contributor[en_US]dc.description.contributor[en_US
Semiconductors V. 36, I. 08
No full textSemiconductors -- August 2002
Volume 36, Issue 8, pp. 837-951
ATOMIC STRUCTURE AND NONELECTRONIC PROPERTIES OF SEMICONDUCTORS
Measurements of Parameters of the Low-Temperature Molecular-Beam Epitaxy of GaAs
V. V. Preobrazhenskii, M. A. Putyato, and B. R. Semyagin
pp. 837-840 Full Text: PDF (60 kB)
Threshold of Inelastic Strain Formation in Si and GaAs Surface Layers under Multiple Pulsed Laser Irradiation
S. V. Vintsents, A. V. Zoteev, and G. S. Plotnikov
pp. 841-844 Full Text: PDF (58 kB)
Dissociation Energies of a CiCs Complex and the A Center in Silicon
N. I. Boyarkina, S. A. Smagulova, and A. A. Artem'ev
pp. 845-847 Full Text: PDF (46 kB)
ATOMIC STRUCTURE AND NONELECTRONIC PROPERTIES
Initial Stages of Growth of Diamond Island Films on Crystalline Silicon
N. A. Feoktistov, V. V. Afanas'ev, V. G. Golubev, S. A. Grudinkin, S. A. Kukushkin, and V. G. Melekhin
pp. 848-851 Full Text: PDF (141 kB)
ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS
Local Structure of Zinc Impurity Centers in Lead Chalcogenides and Pb1 – xSnxTe Solid Solutions
S. A. Nemov and N. P. Seregin
pp. 852-854 Full Text: PDF (100 kB)
Influence of Tellurium Impurity on the Properties of Ga1 – XInXAsYSb1 – Y (X > 0.22) Solid Solutions
T. I. Voronina, T. S. Lagunova, E. V. Kunitsyna, Ya. A. Parkhomenko, M. A. Sipovskaya, and Yu. P. Yakovlev
pp. 855-862 Full Text: PDF (104 kB)
Optical Properties of Bulk and Epitaxial Unordered GaxIn1 – xP Semiconductor Alloys
Ya. I. Vyklyuk, V. G. Deibuk, and S. V. Zolotarev
pp. 863-868 Full Text: PDF (89 kB)
Electrical and Thermoelectric Properties of p-Ag2Te
F. F. Aliev, E. M. Kerimova, and S. A. Aliev
pp. 869-873 Full Text: PDF (74 kB)
Photoconductivity of Coarse-Grained CdTe Polycrystals
S. A. Medvedev, Yu. V. Klevkov, S. A. Kolosov, V. S. Krivobok, and A. F. Plotnikov
pp. 874-877 Full Text: PDF (51 kB)
Time-Resolved Photoluminescence of Polycrystalline GaN Layers on Metal Substrates
A. V. Andrianov, K. Yamada, H. Tampo, H. Asahi, V. Yu. Nekrasov, Z. N. Petrovskaya, O. M. Sreseli, and N. N. Zinov'ev
pp. 878-882 Full Text: PDF (66 kB)
SEMICONDUCTOR STRUCTURES, INTERFACES, AND SURFACES
Low-Threshold Defect Formation and Modification of Ge Surface Layer under Elastic and Elastoplastic Pulsed Laser Effects
S. V. Vintsents, V. B. Zaitsev, A. V. Zoteev, G. S. Plotnikov, A. I. Rodionov, and A. V. Chervyakov
pp. 883-888 Full Text: PDF (79 kB)
Electron Tunneling through a Double Barrier in a Reverse-Biased Metal–Oxide–Silicon Structure
G. G. Kareva, M. I. Vexler, I. V. Grekhov, and A. F. Shulekin
pp. 889-894 Full Text: PDF (89 kB)
LOW-DIMENSIONAL SYSTEMS
Structure of Heterointerfaces and Photoluminescence Properties of GaAs/AlAs Superlattices Grown on (311)A and (311)B Surfaces: Comparative Analysis
G. A. Lyubas, N. N. Ledentsov, D. Litvinov, B. R. Semyagin, I. P. Soshnikov, V. M. Ustinov, V. V. Bolotov, and D. Gerthsen
pp. 895-898 Full Text: PDF (138 kB)
Wavelength of Emission from InGaAsN Quantum Wells as a Function of Composition of the Quaternary Compound
A. E. Zhukov, A. R. Kovsh, E. S. Semenova, V. M. Ustinov, L. Wei, J.-S. Wang, and J. Y. Chi
pp. 899-902 Full Text: PDF (66 kB)
Two-Dimensional p–n Junction under Equilibrium Conditions
A. Sh. Achoyan, A. É. Yesayan, É. M. Kazaryan, and S. G. Petrosyan
pp. 903-907 Full Text: PDF (70 kB)
Calculations of the Charge-Carrier Mobility and the Thermoelectric Figure of Merit for Multiple-Quantum-Well Structures
D. A. Pshenai-Severin and Yu. I. Ravich
pp. 908-915 Full Text: PDF (91 kB)
Nonlinear Response and Nonlinear Coherent Generation in Resonant-Tunneling Diode in a Broad Frequency Range
V. F. Elesin, I. Yu. Kateev, and A. I. Podlivaev
pp. 916-920 Full Text: PDF (61 kB)
Anomalies of the Fractional Quantum Hall Effect in a Wide Ballistic Wire
Z. D. Kvon, E. B. Olshanetsky, A. E. Plotnikov, A. I. Toropov, and J. C. Portal
pp. 921-923 Full Text: PDF (46 kB)
Special Features of Electrical Conductivity in a Parabolic Quantum Well in a Magnetic Field
E. P. Sinyavskii and R. A. Khamidullin
pp. 924-928 Full Text: PDF (59 kB)
Manifestation of A(+) Centers in the Luminescence of Two-Dimensional GaAs/AlGaAs Structures
Yu. L. Ivanov, N. V. Agrinskaya, P. V. Petrov, V. M. Ustinov, and G. É. Tsyrlin
pp. 929-931 Full Text: PDF (43 kB)
One-Dimensional Photonic Crystal Obtained by Vertical Anisotropic Etching of Silicon
V. A. Tolmachev, L. S. Granitsyna, E. N. Vlasova, B. Z. Volchek, A. V. Nashchekin, A. D. Remenyuk, and E. V. Astrova
pp. 932-935 Full Text: PDF (263 kB)
AMORPHOUS, VITREOUS, AND POROUS SEMICONDUCTORS
Gamma-Irradiation-Induced Metastable States of Undoped Amorphous Hydrogenated Silicon
M. S. Ablova, G. S. Kulikov, and S. K. Persheev
pp. 936-940 Full Text: PDF (73 kB)
Fabrication and Properties of Amorphous Hydrogenated Boron Carbide Films
A. S. Anan'ev, O. I. Kon'kov, V. M. Lebedev, A. N. Novokhatski, E. I. Terukov, and I. N. Trapeznikova
pp. 941-943 Full Text: PDF (47 kB)
PHYSICS OF SEMICONDUCTOR DEVICES
Lattice-Matched GaInPAsSb/InAs Structures for Devices of Infrared Optoelectronics
M. Aidaraliev, N. V. Zotova, S. A. Karandashev, B. A. Matveev, M. A. Remennyi, N. M. Stus', G. N. Talalakin, V. V. Shustov, V. V. Kuznetsov, and E. A. Kognovitskaya
pp. 944-949 Full Text: PDF (71 kB)
PERSONALIA
Viktor Il'ich Fistul' (on his 75th birthday)
pp. 950-951 Full Text: PDF (71 kB)Archived web conten
Some remarks on linear set-valued differential equations
No full textThe article discusses various definitions of the derivative of a set-valued mapping and their properties. Also, a linear set-valued differential equation is considered and the existence of solutions for this equation with Hukuhara derivative, Plotnikov-Skripnik derivative and Bede-Gal derivative is investigated.
Mathematics Subject Classification (2010): 34A60, 34A07, 49J53, 54C60
Plotnikov I.S., Large saline lakes of former USSR: a summary review. Hydrobiologia 267
No full textAbstract Seven of the largest lakes in central Asia (former USSR) are saline: Caspian Sea, Aral Sea, lakes Balkhash, Issyk-Kul, the Chany complex, Alakul and Tengiz. They range in salinity from sometimes < 3 g l -1 t o l 9 g l -1 . The paper provides a summary review of their major physico-chemical and biological features. Several are threatened by activities in their drainage basins, particularly diversion of inflowing waters
«Bless yourself included in Union new monasticism...» Letters of Metropolitan Anthony (Khrapovitsky) to Bishop Boris (Plotnikov) (1886–1900 biennium)
No full textThe publication presents the letters of Metropolitan Anthony (Khrapovitsky), one of the most famous bishops of the Russian Orthodox Church the late XIX — early XX century. The letters belong to the early period of the educational and church activities of Metropolitan Anthony (1886–1900). The letters addressed to archimandrite, and on March 1886 Bishop Boris (Plotnikov) — graduate and teacher of the Kazan Theological Academy, and then inspector of the Moscow Theological Academy, rector of the Kiev Theological Seminary and Saint Petersburg Theological Academy. The author of the letters regards the problems of academic monasticism in Russia, theological schools and the general condition of the spiritual life of Russian society 1880–1890-ies. So, Metropolitan Anthony formulates their concept of education of the priesthood and the consolidation of academic monasticism, which, from the point of view of Metropolitan Anthony, must play a crucial role in solving spiritual problems of Russian society. There have been some important features of the spiritual life of the school in one of the most difficult periods of their history. Published letters are in the archive fund bishop Boris (Plotnikov) in the Department of Manuscripts of the National Library of Russia, and researchers have not been used previously
Defining transitional justice: scholarly debate and UN precision
No full textPlotnikov O. Defining transitional justice: scholarly debate and UN precision / O. V. Plotnikov // Lex Portus : юрид. наук. журн. / редкол. : С. В. Ківалов (голов. ред. ради), Б. А. Кормич (голов. ред.), І. В. Сафін (заст. голов. ред.), Т. В. Аверочкіна (наук. ред., відп. секр.) [та ін.] ; НУ "ОЮА", ГО "МА Святий Миколай". - Херсон : ФОП Грінь Д. С., 2017. - № 1. - C. 50-63.The article trace he origins and development of the notion of transitional justice in
scholarly publications and UN practice. It reveals the historical preconditions of its
development. It is being demonstrated that the notion of transitional justice was originally
associated with political transit, however later it has been used as a name for the series of
measures designed to overcome the consequences of armed conflicts and other situations
of mass violence. The article demonstrates the dual nature of transitional justice.В статті розглядається виникнення та розвиток поняття транзитивної
юстиції в науковій думці та практиці ООН. Простежуються історичні передумови
зародження цього поняття, виявляються джерела його виникнення та розвитку.
Доводиться, що поняття «транзитивна юстиція» початково асоціювалося з
правовим забезпеченням політичного транзиту, однак пізніше воно почало
використовуватися для позначення комплексу заходів, спрямованих на подолання
наслідків збройних конфліктів та інших ситуацій масового насильства.
Демонструється дуалізм концепції транзитивної юстиції.В статье рассматривается возникновение и развитие понятия транзитивной
юстиции в научной мысли и практике ООН. Прослеживаются исторические
предпосылки зарождения этого понятия, выявляются источники его возникновения
и развития. Доказывается, что понятие «транзитивная юстиция» изначально
ассоциировалось с правовым обеспечением политического транзита, однако позже
оно стало использоваться для обозначения комплекса мер, направленных на
преодоление последствий вооруженных конфликтов и других ситуаций массового
насилия. Демонстрируется дуализм концепции транзитивной юстиции
- …
