1,721,321 research outputs found

    Total Ionizing Dose Effects on the Noise Performances of a 0.13 um CMOS Technology

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    This paper presents a study of the ionizing radiation tolerance of 0.13 um CMOS transistors, in view of the application to the design of rad-hard analog integrated circuits. Static, signal and noise parameters of the devices were monitored before and after irradiation with 60Co  gamma-rays at a 10 Mrad total ionizing dose. The effects on key parameters such as threshold voltage shift and 1/f noise are studied and compared with the behavior under irradiation of devices in previous CMOS generations

    Characterization of a 28 nm CMOS Technology for Analog Applications in High Energy Physics

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    In the past few years, the 28 nm CMOS technology has raised interest in the high energy physics community for the design and implementation of readout integrated circuits for high-granularity position-sensitive detectors. This work is focused on the characterization of the 28 nm CMOS node with a particular focus on analog performance. Small-signal characteristics and behavior of the white and 1/f noise components are studied as a function of device polarity, dimensions, and bias conditions to provide guidelines for minimum noise design of front-end electronics. Comparison with data extracted from previous CMOS generations is also presented to assess the performance of the technology node under evaluation
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