61 research outputs found
Controlled Synthesis of High-Mobility Atomically Thin Bismuth Oxyselenide Crystals
No full textNon-neutral layered crystals, another group of two-dimensional (2D) materials that lack a well-defined van der Waals (vdWs) gap, are those that form strong chemical bonds in-plane but display weak out-of-plane electrostatic interactions, exhibiting intriguing properties for the bulk counterpart. However, investigation of the properties of their atomically thin counterpart are very rare presumably due to the absence of efficient ways to achieve large-area high-quality 2D crystals. Here, high-mobility atomically thin Bi2O2Se, a typical non-neutral layered crystal without a standard vdWs gap, was synthesized via a facial chemical vapor deposition (CVD) method, showing excellent controllability for thickness, domain size, nucleation site, and crystal-phase evolution. Atomically thin, large single crystals of Bi2O2Se with lateral size up to similar to 200 mu m and thickness down to a bilayer were obtained. Moreover, optical and electrical properties of the CVD-grown 2D Bi2O2Se crystals were investigated, displaying a size-tunable band gap upon thinning and an ultrahigh Hall mobility of >20000 cm(2) V-1 s(-1) at 2 K. Our results on the high-mobility 2D Bi2O2Se semiconductor may activate the synthesis and related fundamental research of other non-neutral 2D materials.National Natural Science Foundation of China [21525310]; National Basic Research Program of China [2014CB932500]; National Program for Support of Top-Notch Young ProfessionalsSCI(E)ARTICLE53021-30261
Design of Driving Transistor in a-Si:H TFT Gate Driver Circuit
No full textThe driving transistor in a-Si:H gate driver circuits is studied systematically for the first time. A viable device layout for the driving device is proposed and investigated. The dependence of the circuit performance on the driving device dimension is analyzed in detail.http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000318549000075&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=8e1609b174ce4e31116a60747a720701Engineering, Electrical & ElectronicEICPCI-S(ISTP)
An IGZO TFT Based In-Cell Capacitance Touch Sensor
No full textAn in-cell active matrix capacitive touch sensor using IGZO TFT is proposed in this paper. The sensor does not need touch deformation, complicated detection mechanisms or extra components. In the sensor, touching events are identified as capacitive coupling between internal detection electrodes and touch objects. Then the coupling can be converted to voltage signal and amplified. TFT sizes are decreased for the high mobility and good uniformity of IGZO, which result in a significantly improved accuracy. A capacitance with the order of 1 fF caused by the coupling could be detected and converted to an adequate output voltage signal.http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000319824700335&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=8e1609b174ce4e31116a60747a720701Engineering, Electrical & ElectronicPhysics, AppliedEICPCI-S(ISTP)
Three level Space Vector Pulse Width Modulation without even order harmonics fit for asymmetrical uniform sampling
No full textAdvanced voltage control methods for current source inverters with linear and nonlinear loads
No full textThe optimal control strategy for rectifier side of low switching frequency back-to-back converter
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An improved control method for PWM current source rectifier with active damping function
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