1,721,334 research outputs found
Fully-integrated CMOS single photon counter
No full textTraditionally, Single Photon Avalanche Diodes (SPADs) are
fabricated using dedicated processes that require additional technological steps when compared to standard CMOS. Instead, this paper presents the design of SPADs that attain good performances, by using a standard highvoltage CMOS process. The detector is monolithically integrated together with an Active Quenching Circuit (iAQC), a counter, and a serial communication interface. This opens the way to the design and fabrication
of ultra compact multi-channel single-photon counters
Double Zinc Diffusion Optimization for Charge Persistence Reduction in InGaAs/InP SPADs
Full text linkWe present an in-depth characterization of the impact of the double zinc diffusion 2D profile on the charge persistence effect in InGaAs/InP Single-Photon Avalanche Diodes (SPADs). Charge persistence might be mitigated by increasing the operating temperature, so as to reduce minority carriers' lifetime, as well as by increasing the number of grading layers. However, the first approach leads to higher dark count rate due to stronger thermal generation of dark carriers, while the latter is technologically challenging. We show that, by adjusting the depth and radius of the shallow zinc diffusion, the electric field profile in the InGaAs layer outside the active area can be optimized in order to effectively mitigate charge persistence, achieving also its complete suppression in specific structures. Our study is based on both TCAD simulations and experimental measurements of different SPADs, whose only difference is in the geometrical shallow diffusion parameters
System and method for estimation of integrated circuit signal characteristics using optical measurements
No full textSystems and methods for making electrical measurements using optical emissions include positioning a sensor/photodetector to measure radiation emissions from devices to be tested. Radiation emission information is collected from the device to be tested during electrical operation. Characteristic features of the radiation emission information are determined, and differences between the characteristic features are deciphered. Based on the differences, models are employed to determine electrical properties of the device, especially operational characteristics
MiSPIA: microelectronic single-photon 3D imaging arrays for low-light high-speed safety and security applications
No full textThis paper reports the achievements so far attained in the development of high-performance CMOS SPADs for singlephoton
sensitive 2D imagers, based on photon-counting and 3D ranging cameras. The latters are based on both the direct
in-pixel measurement of the Time-of-Flight of each photon bouncing bounce from the scene back to the camera and the
“indirect” phase-resolved method to count reflected photons in well-defined time slots, synchronous to the active
illumination of the scene. MiSPiA SPADs are the new state-of-the-art among SPADs in CMOS technologies
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