185 research outputs found

    Dataset: Microstructured hybrid scaffolds for aligning neonatal rat ventricular myocytes

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    This dataset supports the paper: Sanzari, I., Dinelli, F., Humphrey, E., Terracciano, C., Prodromakis, T., (2019) Microstructured hybrid scaffolds for aligning neonatal rat ventricular myocytes Materials Science and Engineering C DOI: https://doi.org/10.1016/j.msec.2019.109783</span

    Dataset for article &quot;Electrical characteristics of interfacial barriers at Metal &ndash; TiO2 contacts&quot;

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    Dataset to support the publication: Michalas, L., Khiat, A., Stathopoulos, S., &amp; Prodromakis, T. (2018). Electrical characteristics of interfacial barriers at Metal &ndash; TiO2 contacts. Journal of Physics D: Applied Physics. DOI: 10.1088/1361-6463/aadbd2</span

    Data for &#39;An electrical characterisation methodology for identifying the switching mechanism in TiO2 memristive stacks&#39;

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    Data supports the paper: L. Michalas, S. Stathopoulos, A. Khiat and T. Prodromakis (2019) An electrical characterisation methodology for identifying the switching mechanism in TiO2 memristive stacks Scientific Reports (https://www.nature.com/srep/)</span

    Dataset for &quot;Compact Modeling of the Switching Dynamics and Temperature Dependencies in TiOx-Based Memristors: Part I &mdash; Behavioral Model&quot;

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    This dataset supported the publication: Vaidya, D., Kothari, S., Abbey, T., Khiat, A., Stathopoulos, S., Michalas, L., Serb, A., &amp; Prodromakis, T. (Accepted/In press). Compact modeling of the switching dynamics and temperature dependencies in TiOx memristors: Part I &mdash; Behavioural Model. IEEE Transactions on Electron Devices. https://doi.org/10.1109/TED.2021.3101996</span

    Dataset for article &quot;A Memristive Switching Uncertainty Model&quot;

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    Data supports the paper Stathopoulos S, Serb A, Khiat A, Ogorza&#x142;ek M, Prodromakis T. 2019. A Memristive Switching Uncertainty Model. IEEE Trans. Electron Devices. 66(7). Available from: 10.1109/TED.2019.2918102. The data for each figure is contained within its respective folder. All figures are accompanied by their corresponding gnuplot script used to generated. Gnuplot is open source software [1]. The scripts can be used either by double-clicking on them (provided gnuplot is installed) or loaded directly through the command line (quotes are mandatory).</span

    Engineering the Maxwell-Wagner polarization effect

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    Layered structures, when supporting the Maxwell–Wagner polarization mechanism, exhibit very large effective electric permittivity and thus can be used for miniaturizing purposes. However, the large interfacial dimensions evolved, limit the Maxwell–Wagner polarization at relatively low frequencies. Any element or mechanism that causes a spatial variation of charge density, contributes to the dielectric susceptibility of a medium. Thus, intentionally planted polarization states can be used for further exploiting the Maxwell–Wagner polarization mechanism

    Surface texturing for Maxwell-Wagner polarisation engineering

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    Surface texturing techniques that are applied in laminar structures to extend the supported Maxwell–Wagner polarisation are described. The roughness of the semiconductor surface is increased, resulting in a subdivision of the large Si–SiO2 interfaces to a multitude of small interfaces. Measured results demonstrate that this surface texturing has a direct effect on the relaxation of the Maxwell–Wagner polarisation and, in particular, at the interfacial to atomic polarisation transition

    Distributed filter design on silicon CMOS

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    We report an investigation on the feasibility of developing distributed circuit elements and filters using standard complementary metal-oxide-silicon (CMOS) technologies. We propose to exploit the low loss interfacial polarisation propagating modes known to occur on multilayered substrates to realise a high effective substrate dielectric constant. Our approach allows the realisation of physically small but electrically large distributed circuit elements and filters on a standard CMOS substrate without recourse to high K material
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