234 research outputs found
Finite integral transform-based analytical solutions of dual phase lag bio-heat transfer equation
No full textNUMERICAL INVESTIGATION OF THERMAL RESPONSE OF BIOLOGICAL TISSUES BASED ON THE DUAL-PHASE- LAG BIO-HEAT TRANSFER MODEL DURING LASER-BASED PHOTO-THERMAL THERAPY
No full textDEVELOPMENT AND APPLICATION OF DIGITAL HOLOGRAPHY FOR TEMPERATURE AND VELOCITY MEASUREMENTS
No full text
Comprehensive Investigation of Truncated Fin GaN FinFET for Improved Analog/RF Performance
No full textThis work presents an analysis of the performance of Gallium Nitride Truncated Fin FinFETs (GaN-TF-FinFET) and compares them with conventional (C) FinFET, TF-FinFET, and silicon-on-insulator (SOI) TF-FinFET in analog and RF applications by using advanced simulation techniques at the 7 nm technology node and a low supply voltage (V DS = 0.3 V). This work evaluates key analog and high-frequency performance metrics of the GaN-TF-FinFET. The results show a 60% increase in drain current, leading to improved transconductance and switching speed. Additionally, the subthreshold slope is reduced to 34 mV/decade, representing a 93.74% improvement compared to the C-FinFET. Furthermore, the GaN-TF-FinFET demonstrates the lowest DIBL and the highest electron mobility. Parameters such as stray capacitance, f T, f MAX, GFP, TFP, and GTFP are superior in GaN-TF-FinFET, highlighting its high-frequency performance. Our findings demonstrate significant improvements in device efficiency and signal integrity, positioning GaN-TF-FinFET as a promising device for next-generation high-frequency applications
Optimizing Gallium Nitride (GaN) Based SOI-TF-FinFETs for Enhanced Linearity and Low Distortion in High-Frequency Applications
No full text161-166Gallium Nitride (GaN) based Fin Field-Effect Transistors (FinFETs) represent a breakthrough in semiconductor
technology, especially for applications requiring high power, high frequency, and high efficiency. GaN is a wide bandgap
semiconductor material known for its excellent electrical properties, including high electron mobility, breakdown voltage,
and thermal stability. These characteristics make GaN an ideal candidate for next-generation electronic devices, particularly
in RF and microwave communication, power amplification, and high-speed digital circuits. This paper investigates the GaNSOI
truncated FinFET (GaN-SOI-TF-FinFET) designed for high-performance linearity and low distortion, focusing on key
metrics such as second-order and third-order transconductances (gm2 and gm3) values, third-order intercept points (IIP3),
second and third harmonic distortions (HD2 and HD3), third-order intermodulation distortion (IMD3), and the 1-dB
compression point (P1dB). By leveraging the high electron mobility and wide bandgap of GaN, we have optimized the fin
dimensions and gate structures to enhance device performance. Our results indicate that the GaN-SOI-TF-FinFET shows
significant improvements compared to conventional Silicon FinFETs. The gm2, gm3, HD2, HD3, and IMD3 values are
reduced by 42.86%, 62.50%, 112.50%, 56.12%, and 56.25% respectively, while IIP3 and P1dB values are increased by
300% and 100% respectively. These parameter improvements indicate better power handling capacity and robustness of the
proposed device, highlighting the potential of GaN-SOI-TF-FinFET for advanced RF and communication applications
requiring high linearity and low distortion
A combinatorial digital circuit with evolutionary algorithm for evolvable hardware software codesign
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