1,721,397 research outputs found
Problematiche di affidabilità
No full textQuesto articolo descrive i principali fenomeni fisici in grado di degradare o danneggiare in modo permanente i circuiti integrati, limitandone l'affidabilità. In particolare verranno trattati quei problemi delle tecnologie MOS e BiCMOS che per il loro carattere fondamentale rimarranno di attualità anche nelle future versioni di queste tecnologie. Non verranno trattati, invece, i fenomeni responsabili di errori transitori (soft-errors), quali l'interazione tra dispositivi e radiazione ionizzante nella circuiteria e nelle celle delle memorie RAM dinamiche
Silicon Luminescence Techniques for the Characterization of Hot-Carrier and Degradation Phenomena in MOS Devices
No full textSpecial Issue of IEEE Transactions on Semiconductor Manufacturing devoted to the 2011 International Conference on Microelectronic Test Structures.
No full textBipFLASH: a Novel Non-Volatile Memory Cell Concept for High Speed - Low Power Applications
No full textWe present a novel non-volatile memory cell architecture, which remarkably improves injection efficiency overconventional channel hot electron programming. We show how this superior performance can be traded to achieve either lowvoltage-low power or high-speed operation. The cell concept is validated by means of numerical device simulations. Criteriafor device optimization are also discussed
Use and comparative assessment of the CVFEM method for Poisson–Boltzmann and Poisson–Nernst–Planck three dimensional simulations of impedimetric nano-biosensors operated in the DC and AC small signal regimes
No full textWe specialize the Control Volume Finite Element Method (CVFEM) for the solution of the Poisson–Boltzmann and Poisson–Nernst–Planck (also known as Poisson–drift–diffusion) system of equations on unstructured 3D meshes describing nanoelectronic biosensors operated in the DC and AC small signal regimes. We provide the exact analytical expressions for volume and surface integrals derived by means of a linear coordinate transformation and show that they are both accurate and efficient, especially on coarse grids. Being of great importance for the chosen application, the conservation property is investigated and we show that, for the CVFEM to be conservative, the calculations on the boundary have to be performed with special care. CVFEM is carefully compared to the Galerkin Finite Element Method (GFEM) from the point of view of the underlying theory, implementation and solution calculation. The simulation tool is used to evaluate the response of a real nanoelectrode-based biosensor array to the introduction of small nanoparticles
Experimental Signature and Physical Mechanisms of Substrate Enhanced Gate Current in MOS Devices
No full textThis paper examines in detail the phenomenon of Substrate Enhanced Electron Injection (SEEI). By using floating gate devices less aggressively scaled than the MOSFETs of Bude (1995) we are able to: (1) develop criteria to separate SEEI from the coexisting channel hot electron (CHE) injection; (2) point out a direct proportionality between the gate (I/sub G/) and the substrate (I/sub B/) currents that provides a signature of SEEI; (3) reconcile SEEI with reported mechanisms of optical minority carrier generation in the substrate
Microelectronic Engineering Special Issue devoted to the 2001 Insulating Films on Semiconductors Conference, INFOS 2001
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