1,721,110 research outputs found
Microstructural and electrical properties of NiSi2 precipitates at dislocations in silicon
No full textTransmission electron microscopy (TEM) and deep level transient spectroscopy (DLTS) have been used to investigate the interaction of nickel impurities with glide dislocations in plastically deformed silicon. A strong interaction between silicide precipitates and glide dislocations has been observed showing that the latter not only serve as nucleation sites but are an integral part of precipitate growth. Deep localized states obtained by DLTS are most probably related to nickel atoms close to or in the dislocation core. It is speculated that the strong silicide-dislocation interaction may account for nickel incorporation into the dislocation core
Microstructural and electrical properties of NiSi2 precipitates at dislocations in silicon
No full textTransmission electron microscopy (TEM) and deep level transient spectroscopy (DLTS) have been used to investigate the interaction of nickel impurities with glide dislocations in plastically deformed silicon. A strong interaction between silicide precipitates and glide dislocations has been observed showing that the latter not only serve as nucleation sites but are an integral part of precipitate growth. Deep localized states obtained by DLTS are most probably related to nickel atoms close to or in the dislocation core. It is speculated that the strong silicide-dislocation interaction may account for nickel incorporation into the dislocation core
Papers dedicated to Professor Dr. Wolfgang Schroter on the occasion of his 65th anniversary - Preface
No full textHigh-resolution electron microscopy of interfaces between solids with varying degree of atomic ordering
No full textHigh-resolution electron microscopy is used to study interfaces between solids with varying degree of atomic ordering. Applying a recently developed technique the structure of amorphous germanium near (111) oriented crystalline silicon is described by its two-dimensional distribution function rho(x, y) of atoms, and properties of rho(x, y) are extracted from experimental images. Using extensive image simulations it is further shown that the technique is suitable to measure composition profiles at coherent heterointerfaces
On the nature of defects produced by motion of dislocations in silicon
No full textPoint defects generated during motion of dislocations in silicon have been investigated using their reaction with gold atoms during gold in-diffusion. Deep Level Transient Spectroscopy (DLTS) measurements in n- and p-type samples have revealed that in regions with dislocation densities of 10(4)-10(6)cm(-2), the concentration of gold atoms is by 1.5-2 orders of magnitude higher than in the dislocation-free regions of the same samples. The increase in the gold atom concentration in the regions containing dislocations is explained by the presence of some vacancy complexes generated by dislocations moving in their slip planes. Just after dislocation motion, most of these complexes are not detectable by DLTS. They become observable in DLTS due to their reaction with gold atoms.Russian Academy of Sciences; President grant [NSh-884.2014.2
Epitaxial growth due to phase separation of disordered eutectic Au : Si alloys on silicon
No full textEpitaxial growth of gold on Si(100) from disordered Au:Si alloys has been studied by in situ reflection high energy electron diffraction and ex situ transmission electron microcopy. It is shown that different orientation relationships are formed depending on whether the disordered alloy is the eutectic melt or a disordered phase resulting from the reaction of silicon and deposited Au:Si thin films at temperatures far below the eutectic temperature. This observation is taken as evidence that the latter phase is a solid amorphous phase with near-eutectic composition
Microstructural influence on the early stages of interreaction of Al/Ni-investigated by TAP and HREM
No full textThe intermetallic phases of the binary system Al/Ni have attracted considerable effort in investigation, because of a wide field of technological applications. In our recent work we have demonstrated the influence of the microstructure on the early interreaction stages. Although the chemical and spatial information obtained by 3D-atomprobe analysis is unrivaled in resolution, identification of observed phases is only possible by use of complementary methods of investigation. The present paper describes the important role of high resolution electron microscopy for indentifying the structural nature of formed phases detected by 3D-atomprobe analysis. An outline of a model which might explain the different reaction paths in AlNi observed for different microstructures will be given. (C) 2002 Elsevier Science B.V. All rights reserved
Electrical properties of gold in dislocated silicon
No full textWe present results of the electrical properties of gold-decorated dislocations in silicon studied by means of Deep Level Transient Spectroscopy (DLTS). We investigated the effect of the gold by measuring DLTS spectra from Schottky diodes having different gold concentrations but same thermal history. We found three point-defect-like deep levels which occurrence could be attributed to the gold. After gold in-diffusion the well-known A-, B- and C-lines of dislocated n-type silicon could hardly be measured, whereas another gold-induced line appeared. This line has nearly the same emission characteristics as the gold acceptor level in non-dislocated silicon but shows a logarithmic dependence on capture time typical for extended defects. In the lower half of the band gap we measured at least two gold-induced levels. One of them shows very similar emission characteristics to the gold donor level in non-dislocated silicon. Both amplitudes are logarithmically dependent on the capture time. We tentatively attribute this behaviour to substitutional dissolved gold accumulated in the vicinity of the dislocations and in dislocation core
Epitaxial growth due to phase separation of disordered eutectic Au : Si alloys on silicon
No full textEpitaxial growth of gold on Si(100) from disordered Au:Si alloys has been studied by in situ reflection high energy electron diffraction and ex situ transmission electron microcopy. It is shown that different orientation relationships are formed depending on whether the disordered alloy is the eutectic melt or a disordered phase resulting from the reaction of silicon and deposited Au:Si thin films at temperatures far below the eutectic temperature. This observation is taken as evidence that the latter phase is a solid amorphous phase with near-eutectic composition
Papers dedicated to Professor Dr. Wolfgang Schroter on the occasion of his 65th anniversary - Preface
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