1,720,967 research outputs found
Low-noise avalanche photodiode in standard 0.35-um CMOS technology
No full textIn this paper, we report on an Avalanche Photodiode (APD) fabricated in a standard 0.35-μm CMOS technology. The main electrooptical characteristics of the device are presented, showing a remarkably low-noise factor if compared to other CMOS APDs. An estimation of the noise properties of a pixel based on the proposed photodiode with charge-amplifier readout is performed, showing that it could have an improved noise performance with respect to a standard photodiode-based pixel
Design of Electro-Optical Demodulating Pixel in CMOS Technology
No full textWe report on the design of an innovative CMOS demodulating pixel architecture conceived for distance measurements according to a continuous wave phase modulation time of flight technique. An electro-optical mixer (EOM) photo-detector, based on two closely spaced p-n junctions, has been integrated together with dedicated read out electronics, in a 500 ƒÝm x 25 ƒÝm pixel. To validate the approach a 128-pixel linear array has been designed and fabricated in 0.35 ƒÝm, 3.3 V, 4M-2P, CMOS technology
A Single-Photon-Avalanche-Diode 3D Imager
No full textThis paper describes the design and characterization of a 64-pixel array exploiting the high sensitivity offered by Single Photon Avalanche Diodes, fabricated in a conventional high-voltage 0.8um CMOS technology, and aimed at three dimensional measurements using the Time-Of-Flight technique. The detection of the incident light signals is performed using a photodiode biased above its breakdown voltage so that an extremely high sensitivity can be achieved exploiting the intrinsic multiplication effect of the avalanche phenomenon. A single photon avalanche diode and dedicated read-out electronics for the arrival-time estimation of incident light pulses have been implemented in a 38x180-um2 pixel. To increase the distance measurement resolution a multiple pulse measurement is used, extracting the mean value of the light pulse arrival-time directly in each pixel; this innovative approach dramatically reduces the dead-time of the pixel read-out, allowing a high frame rate imaging to be achieved. The sensor array provides a range map from 2m to 5m with a precision better than ±0.75% without any external averaging operatio
CMOS single photon avalanche diode for imaging applications
No full textThis paper reposrts on a novel distance sensor employing an avalanche photodiode (APD) operating in a single photon counting configuration for Time-of-Flight 3D imaging applications
CMOS distance sensor based on single photon avalanche diode
No full textThis paper reports on a novel distance sensor employing an avalanche photodiode (APD) in a single photon counting configuration for Time-Of-Flight 3D imaging applications. An active pixel containing a single photon detector and a read-out channel has been designed. An averaging circuit is included in the pixel, allowing an increased resolution with a reduction of the overall measurement time. A 64x2 pixel linear array has been fabricated in a conventional industrial high-voltage 0.8-μm CMOS technology, together with an APD test structure. A preliminary electro-optical characterization of the test structure is reported
A CMOS Sensor based on Single Photon Avalanche Diode for Distance Measurement Applications
No full textThis paper describes the design of a 64x2-pixel array, fabricated in a conventional industrial high-voltage 0.8um CMOS technology, and aimed at three dimensional measurements based on the Time-Of-Flight technique. Light signals are detected using a photodiode biased above its breakdown voltage so that an extremely high sensitivity can be achieved exploiting the intrinsic multiplication effect of the avalanche phenomenon. A single photon avalanche diode and dedicated read-out electronics for light pulses arrival-time estimation have been implemented in a 38x180-um2 pixel with an expected power consumption of about 20 uW. To increase the distance measurement resolution a multiple pulse measurement is used, extracting the mean value of the light pulse arrival-time directly in each pixel; this innovative approach dramatically reduces the dead-time of the pixel read-out, allowing a high frame rate imaging to be achieve
A CMOS 3-D imager based on single-photon avalanche diode
No full textA 64-pixel linear array aimed at 3-D vision applications is implemented in a high-voltage 0.8 m CMOS technology. The detection of the incident light signals is performed using photodiodes biased above breakdown voltage so that an extremely high sensitivity can be achieved exploiting the intrinsic multiplication effect of the avalanche phenomenon. Each 38 180-um2 pixel includes, besides the single photon avalanche diode, a dedicated read-out circuit for the arrival-time estimation of incident light pulses. To increase the distance measurement resolution a multiple pulse measurement is used, extracting the mean value of the light pulse arrival-time directly in each pixel; this innovative approach dramatically reduces the dead-time of the pixel read-out, allowing a high frame rate imaging to be achieved. The sensor array provides a range map from 2 m to 5 m with a precision better than 0 75% without any external averaging operation. Moreover, with the same chip, we have explored for the first time the implementation of an indirect time-of-flight measurement by operating the proposed active pixel in the photon counting mode
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