3,690 research outputs found

    Selective-Area MOCVD Growth and Carrier-Transport-Type Control of InAs(Sb)/GaSb Core-Shell Nanowires

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    We report the first selective-area growth of high quality InAs­(Sb)/GaSb core–shell nanowires on Si substrates using metal–organic chemical vapor deposition (MOCVD) without foreign catalysts. Transmission electron microscopy (TEM) analysis reveals that the overgrowth of the GaSb shell is highly uniform and coherent with the InAs­(Sb) core without any misfit dislocations. To control the structural properties and reduce the planar defect density in the self-catalyzed InAs core nanowires, a trace amount of Sb was introduced during their growth. As the Sb content increases from 0 to 9.4%, the crystal structure of the nanowires changes from a mixed wurtzite (WZ)/zinc-blende (ZB) structure to a perfect ZB phase. Electrical measurements reveal that both the n-type InAsSb core and p-type GaSb shell can work as active carrier transport channels, and the transport type of core–shell nanowires can be tuned by the GaSb shell thickness and back-gate voltage. This study furthers our understanding of the Sb-induced crystal-phase control of nanowires. Furthermore, the high quality InAs­(Sb)/GaSb core–shell nanowire arrays obtained here pave the foundation for the fabrication of the vertical nanowire-based devices on a large scale and for the study of fundamental quantum physics

    Origin of the low thermal conductivity of the thermoelectric material beta-Zn(4)Sb(3): An ab initio theoretical study

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    By modeling beta-Zn(4)Sb(3) material as a Zn(36)Sb(30) crystal with defects, the crystal structure and thermal properties of beta-Zn(4)Sb(3) are studied by ab initio method to explain its extremely low thermal conductivity at moderate temperature. The formation and migration energies of defects are calculated and used to explain the partial occupation of Zn at the lattice sites, the disordered local structures and the origin of the low thermal conductivity of beta-Zn(4)Sb(3). Our study also unravels the puzzling dependence of thermal conductivity on doping in beta-Zn(4)Sb(3). A doping strategy is proposed to improve the thermoelectric performance of beta-Zn(4)Sb(3). (C) 2011 American Institute of Physics. [doi:10.1063/1.3599483
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