1,720,961 research outputs found

    Mixed-Mode Circuit Simulation with Full-Wave Analysis of Interconnections

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    A simulation technique, which couples full-wave, electro-magnetic simulation of interconnections and distributed semiconductor device modeling, is described in this paper. A 3D FDTD scheme is adopted to describe the circuit passive part, whereas conventional device simulation techniques are employed for the active semiconductor devices. The resulting scheme allows for accurate mixed-mode simulation, inherently accounting for propagation and radiative effects. An application example is discussed, consisting of the simulation of a Si-MMIC RF switch

    Mixed-mode circuit simulation with full-wave analysis of interconnections

    No full text
    In this paper, a simulation technique is introduced, which couples solid-state device modeling and full-wave, electromagnetic simulation of interconnections. A three-dimensional (3-D) FDTD scheme is adopted to describe the circuit passive part, whereas numerical device simulation techniques are employed for the active semiconductor devices. The resulting scheme allows for accurate mixed-mode simulation, which inherently accounts for propagation and radiative effects. An application example is discussed, consisting of the simulation of a Si-MMIC RF switch; results have been compared with predictions coming from a standard microwave circuit simulator, validating the tool, and illustrating its application range

    Integrated FDTD and solid-state device simulation

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    A mixed-mode circuit simulation technique is presented, based on the lumped-element finite-difference time-domain (FDTD) scheme. The algorithm is extended to incorporate numerical models of lumped devices. This makes the formulation and characterization of analytical, closed-form models for circuit devices unnecessary and allows for directly correlating device behavior and fabrication process parameters. The code is therefore especially suited for high-speed and microwave IC optimizatio

    Accurate analysis of silicon, VLSI-technology compatible spiralinductors

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    In this paper, the application of a full-wave electromagnetic simulator to the analysis of solid-state (CMOS-compatible) inductors is described. By means of the simulation, performance of actual inductors has been correctly predicted and characterization of equivalent circuit components has been carried out. Impact of some design options on the inductor performance has been discussed. Detrimental effects related to the specific technology adopted have also been evaluated and physically interprete

    Global Modeling Strategies for the Analysis of High Frequency Integrated Circuits

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    In this paper, a simulator based on a global electromagnetic model is presented, suited for the analysis of HF integrated and hybrid electronic circuits. The model is based on the self-consistent solution of Maxwell's equation and of semiconductor transport equations, exploiting a generalized finite-difference time-domain (FDTD) scheme. The tool is, therefore, capable of accounting, on a distributed basis, for actual interactions between wave propagation and charge transport, anti is capable of providing a physically based picture of traveling-wave semiconductor devices. The implementation is such that more conventional algorithms (e.g. lumped-element FDTD or plain FDTD) can be regarded as a subset of the global scheme itself. This makes it possible to intermix different physical models, featuring different degrees of physical accuracy and computational efficiency, within the same simulation environment. Main features of such an environment are described by means of the simulation of a simple 76-GHz distributed switc

    Distributed modeling of devices and interconnections through advanced LE-FDTD algorithm

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    A mixed-mode circuit simulation technique is presented, based on the lumped-element FDTD scheme. The algorithm is extended to accomplish numerical, as well as analytical, models of lumped devices. Device behavior can thus by directly linked to technological parameter, without requiring the formulation and characterization of an equivalent circuit. Application of numerical and analytical lumped device models to the analysis of small-size electronic circuits are discussed. The practicality of LE-FDTD approach for TCAD circuit optimization is thus demonstrated
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