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Early stages of growth of Ge quantum dots
No full textThe present work is concentrated on the investigation of the initial stages of growth of Ge nanoparticles embedded in an amorphous A1203 matrix on suitable substrates. The growth technique is based on self-organization processes related to the balance of the interface energies involved. Combined data from complementary optical techniques (absorption, Raman scattering, spectroscopic ellipsometry) give evidence of a behaviour which can be ascribed to the existence of a wetting layer, not detectable by conventional transmission microscopy
Isteresi nelle proprietà ottiche non lineari di Ga in SiOx osservata per mezzo di tecniche ottiche non lineari
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Charge-density-wave band structure and infrared and visible thermoreflectance of 2H-TaSe_2
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Electronic Properties of Semiconductor and Metallic Clusters
No full textThe investigation of the structures in the nanometer domain presents rather challenging aspects in terms of experimental characterization and theoretical calculations for the prediction and/or interpretation of their basic properties. To summarize in one sentence, it can be stated that space confinement plays a key role in modeling and tuning the physical properties of nanocrystals
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