1,721,195 research outputs found
Investigation of quantum effects in highly-doped MOSFETs by means of a self-consistent 2D model
Characterization of oxide trap energy by analysis of the SILC roll-off regime in Flash memories
We present a novel experimental technique to identify
the energy of traps responsible for the stress-induced leakage
current (SILC) in Flash memories, based on a standard gate-stress
analysis with a drain bias used to accelerate channel electrons.
From the study of the rolloff in SILC characteristics, we provide
evidence for the existence of high-energy traps in the silicon
dioxide, located at energies above the silicon conduction band
minimum. The new technique is able to characterize the position
of defects along the channel and the electron effective temperature
at the SILC spot, allowing to extract the dependence of channel
electron temperature on the distance from the drain
Actively quenched single-photon avalanche diode for high repetition rate time-gated photon counting
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