1,721,157 research outputs found
Three dimensional distribution of CMOS Latch-up current
No full textThis paper presents experimental evidence of relevant three-dimensional (3-D) effects in CMOS latch-up obtained by means of novel multicontact test structures. It is also shown that "quasi"-two-dimensional (2-D) experimental data in good agreement with numerical simulations can be achieved only by limiting the analysis to the central sections of wide experimental devices
Hot-Electrons and -Holes in MOSFETs Biased Below the Si-SiO2 Interfacial Barrier
No full textThis work presents an investigation of low-voltage hot carrier injection in submicrometer size MOSFET’s showing that for both electrons and holes it can take place even when the maximum energy to be gained by the applied field is less than the Si-SiO2 interfacial barrier height. In the case of electrons, it is also shown that the injection process, due to Auger recombination at low applied drain-to-source voltages (vds), is well described by the lucky-electron model (LEM) as soon as vds exceeds the threshold for this to become applicable. © 1985, IEE
Monte Carlo modeling of nanometer scale MOSFETs
No full textRecent developments in the Monte Carlo method for the simulation of semi-classical carrier transport in nano-MOSFETs include the treatment of quantum-mechanical effects in the simulation (using either the Multi-Subband approach or quantum corrections to the electrostatic potential). In this paper, after reviewing recent progress in this field, selected applications are presented, including the analysis of quasi-ballistic transport, the determination of the RF characteristics of deca-nanometric MOSFETs, and the study of non-conventional device structures and channel materials
The Monte Carlo approach to transport modeling in decananometer MOSFETs
No full textIn this paper, we review recent developments of
the Monte Carlo approach to the simulation of semi-classical
carrier transport in nano-MOSFETs, with particular focus on the
inclusion of quantum-mechanical effects in the simulation (using
either the Multi-Subband approach or quantum corrections to
the electrostatic potential) and on the numerical stability issues
related to the coupling of the transport with the Poisson equation.
Selected applications are presented, including the analysis of
quasi-ballistic transport, the determination of the RF characteristics
of deca-nanometric MOSFETs, and the study of nonconventional
device structures and channel materials
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