14 research outputs found
Laser performance of Er-doped potassium double tungstate epitaxial layers
No full textLaser operation of Er-doped epitaxial layer of monoclinic double tungstate composition grown onto undoped KYW substrate is demonstrated for the first time. Maximum output power of 16 mW with slope efficiency of 64% is achieved at 1606 nm under direct in-band pumping by a diode-pump Er,Yb-laser at 1522 nm.</p
Опыт применения стратегии JADC2 вооруженных сил США в специальной военной операции на Украине
No full textD. S. Sharak, D. V. Guretsky. Experience of using the JADC2 strategy of the US armed forces in a special military operation in UkraineСтатья посвящена анализу стратегии Министерства обороны США JADC2 и опыту ее применения в специальной военной операции на Украине
Growth, spectroscopy, and laser characterization of Er:KGd<inf>x</inf>Yb<inf>y</inf>Y<inf>1−x−y</inf>(WO<inf>4</inf>)<inf>2</inf>epitaxial layers
No full text© 2017 Optical Society of America. We report on the composition of Er-doped KGd x Yb y Y 1−x−y (WO 4 ) 2 layers to be grown onto undoped KY(WO 4 ) 2 substrate providing fine lattice matching and high refractive index contrast with the substrate and fabrication of high optical quality Er1.3 at: %: KGd 0.2 Yb 0.15 Y 0.65 (WO 4 ) 2 epitaxial layers with thickness up to 180 μm. Absorption and luminescence properties of the layer were measured and laser action under direct in-band pumping was reported for the first time, to our knowledge, in a non-waveguide configuration. A maximum output power of 16 mW with slope efficiency of 64% was achieved at 1606 nm
Growth, spectroscopy, and laser characterization of Er:KGd<inf>x</inf>Yb<inf>y</inf>Y<inf>1−x−y</inf>(WO<inf>4</inf>)<inf>2</inf>epitaxial layers
No full text© 2017 Optical Society of America. We report on the composition of Er-doped KGd x Yb y Y 1−x−y (WO 4 ) 2 layers to be grown onto undoped KY(WO 4 ) 2 substrate providing fine lattice matching and high refractive index contrast with the substrate and fabrication of high optical quality Er1.3 at: %: KGd 0.2 Yb 0.15 Y 0.65 (WO 4 ) 2 epitaxial layers with thickness up to 180 μm. Absorption and luminescence properties of the layer were measured and laser action under direct in-band pumping was reported for the first time, to our knowledge, in a non-waveguide configuration. A maximum output power of 16 mW with slope efficiency of 64% was achieved at 1606 nm
Laser performance of Er-doped potassium double tungstate epitaxial layers
No full text© 2018 IEEE. Laser operation of Er-doped epitaxial layer of monoclinic double tungstate composition grown onto undoped KYW substrate is demonstrated for the first time. Maximum output power of 16 mW with slope efficiency of 64% is achieved at 1606 nm under direct in-band pumping by a diode-pump Er,Yb-laser at 1522 nm
Growth and spectral characteristics of single crystal layer of KY(WO4)2 doped with Ho3+ions
No full textWe report on growth and characterization of Ho3+ doped KY(WO4)2 layers having high structural homogeneity and optical quality. The obtained samples of KGd0.028Yb0.047Y0.875 (WO4)2 layer doped with 5.0 at.% of Ho3+ content with a thickness of 140 μm have been prepared using liquid phase epitaxy method, the samples can be used as gain medium of planar waveguide lasers, emitting in the spectral range of about 2 mm
Laser performance of Er-doped potassium double tungstate epitaxial layers
No full text© 2018 IEEE. Laser operation of Er-doped epitaxial layer of monoclinic double tungstate composition grown onto undoped KYW substrate is demonstrated for the first time. Maximum output power of 16 mW with slope efficiency of 64% is achieved at 1606 nm under direct in-band pumping by a diode-pump Er,Yb-laser at 1522 nm
Continuous-wave and Q-switched operation of a compact, diode-pumped Yb3+:KY(WO4)2 planar waveguide laser
No full textA diode-pumped LPE-grown Yb:KYW planar waveguide laser is demonstrated in a microchip monolithic cavity configuration. Output powers as high as 148mW and thresholds as low as 40mW were demonstrated during continuous-wave operation. Pulses of 170ns duration with maximum pulse energy of 44nJ at a 722kHz repetition rate were generated when Q-switched using a semiconductor saturable absorber mirror
In-Band Pumped Continuous-Wave Lasers Based on Ho:KY(WO4)2 Crystal and Ho:KGdYbY(WO4)2 Epitaxial Layer
No full text2 μm lasers are in demand for a number of practical applications, such as environmental monitoring, remote sensing, medicine, material processing, and are also used as a pump sources for optical parametric generators. Crystals of double potassium tungstates doped with ions of rare-earth elements were shown to be promising materials both for the creation of classical solid-state lasers and waveguide lasers. The aim of this work was to develop a tunable pump laser in the spectral region of 1.9 μm based on double tungstate crystals doped with thulium ions and to study the lasing characteristics of a Ho:KY(WO4)2 crystal and a Ho:KGdYbY(WO4)2 single-crystal epitaxial layer under in-band pumping. With a Ho(1at.%):KY(WO4)2 crystal, continuous wave low-threshold lasing with an output power of 85 mW with a slope efficiency of 54 % at 2074 nm was achieved. For the first time to our knowledge, continuous wave laser generation in a waveguide configuration is realized in a single-crystal layer of potassium tungstate doped with holmium ions grown by liquid-phase epitaxy. The maximum output power at a wavelength of 2055 nm was 16.5 mW
