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Ripple Structure on Metal Surfaces Induced by Ion Sputtering
A review of ripple formation on solid surfaces induced by ion sputtering is presented. We review in detail very recent development in this field showing that the ripple morphology, generated by ion bombardment at normal incidence on (110) metal surfaces, is a consequence of the effect both of a Schwoebel barrier on inter-layer diffusion processes and of the anisotropic intra-layer mass transport which generates a ripple instability which can overcome the one due to ion erosion
Temperature and time evolution of ripple structure induced by ion sputtering on Cu(110)
The surface morphology generated by ion sputtering on a Cu(110) crystal has been investigated by Scanning Tunneling Microscopy (STM). A ripple structure is observed for all the considered values of the incident ion beam angle theta (0 degrees < theta < 70 degrees). In particular, normal:sputtering produces a well defined ripple structure whose wave vector rotates from (001) to (1 (1) over bar 0) by increasing the substrate temperature. Moreover, for theta = 45 degrees the ripple wavelength lambda increases in time following a scaling law lambda proportional to t(z), with z = 0.26 +/- 0.02. These results are described by a continuum equation which includes, in addition to the surface curvature dependent erosion terms, a diffusion term that takes into account both the surface anisotropy and the effect of an Ehrlich-Schwoebel barrier
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