36,703 research outputs found
Semiconductors V. 31, I. 02
No full textSemiconductors -- February 1997
Volume 31, Issue 2, pp. 97-205
Photovoltaic effect in a p-type CuInSe2/green leaf heterojunction
V. Yu. Rud', Yu. V. Rud', and V. Kh. Shpunt
Full Text: PDF (76 kB)
Electrothermal instabilities induced by a metastable electronic state in PbTe(Ga)
B. A. Akimov, N. B. Brandt, A. V. Albul, and L. I. Ryabova
Full Text: PDF (64 kB)
Resonant interaction of electrons with a high frequency electric field in two-barrier structures
I. V. Belyaeva, E. I. Golant, and A. B Pashkovskii
Full Text: PDF (168 kB)
Transport of hydrogen in films of graphite, amorphous silicon, and nickel oxide
I. E. Gabis
Full Text: PDF (89 kB)
Tunnel excess current in nondegenerate barrier (p–n and m–s) silicon-containing III–V structures
V. V. Evstropov, Yu. V. Zhilyaev, M. Dzhumaeva, and N. Nazarov
Full Text: PDF (143 kB)
Photosensitivity of porous silicon-silicon heterostructures
E. V. Astrova, A. A. Lebedev, A. D. Remenyuk, Yu. V. Rud', and V. Yu. Rud'
Full Text: PDF (62 kB)
Quantum dot injection heterolaser with ultrahigh thermal stability of the threshold current up to 50 °C
M. V. Maksimov, N. Yu. Gordeev, S. V. Zaitsev, P. S. Kop'ev, I. V. Kochnev, N. N. Ledentsov, A. V. Lunev, S. S. Ruvimov, A. V. Sakharov, A. F. Tsatsul'nikov, Yu. M. Shernyakov, Zh. I. Alferov, and D. Bimberg
Full Text: PDF (3533 kB)
Optical properties of submonolayer CdSe-(Zn,Mg)(S,Se) structures
I. L. Krestnikov, M. V. Maksimov, S. V. Ivanov, N. N. Ledentsov, S. V. Sorokin, A. F. Tsatsul'nikov, O. G. Lyublinskaya, B. V. Volovik, P. S. Kop'ev, and S. M. Sotomayor Torres
Full Text: PDF (91 kB)
Electron and hole spectra and selection rules for optical transitions in Ge1 – xSix/Ge heterostructures
V. Ya. Aleshkin and N. A. Bekin
Full Text: PDF (163 kB)
Mechanical properties of pure and doped InP single crystals determined under local loading
Yu. S. Boyarskaya, D. Z. Grabko, M. I. Medinskaya, and N. A. Palistrant
Full Text: PDF (183 kB)
Unusual absorption "band" in the infrared spectrum of silicon annealed at high temperature and then rapidly cooled
N. S. Zhdanovich
Full Text: PDF (46 kB)
Numerical modeling of microplasma instability
B. I. Datsko
Full Text: PDF (129 kB)
Oscillations of a ballistic hole current through uniaxially compressed semiconductor layers
N. Z. Vagidov, Z. S. Gribnikov, and A. N. Korshak
Full Text: PDF (296 kB)
Trapping of hot electrons at repulsive centers under transverse runaway conditions
Z. S. Kachlishvili, Kh. Z. Kachlishvili, and F. G. Chumburidze
Full Text: PDF (94 kB)
Characteristic features of electron photoemission from the metal in SiC-based Schottky diodes
L. A. Kosyachenko, V. M. Sklyarchuk, and E. F. Sklyarchuk
Full Text: PDF (108 kB)
Breakdown electroluminescence spectra of silicon carbide p–n junctions
M. V. Belous, A. M. Genkin, V. K. Genkina, and O. A. Guseva
Full Text: PDF (70 kB)
The dominant mechanisms of charge-carrier scattering in lead telluride
D. M. Zayachuk
Full Text: PDF (98 kB)
Formation of order in a system of localized charges in disordered layers of solid solutions of cadmium telluride and cadmium sulfide
A. P. Belyaev, V. P. Rubets, and I. P. Kalinkin
Full Text: PDF (71 kB)
Two-electron tin centers with negative correlation energy in lead chalcogenides. Determination of the Hubbard energy
V. F. Masterov, F. S. Nasredinov, S. A. Nemov, and P. P. Seregin
Full Text: PDF (109 kB)
Effect of thermal annealing on the luminescence properties of ZnCdSe/ZnSe quantum-well structures
E. M. Dianov, P. A. Trubenko, E. É. Filimonov, and E. A. Shcherbakov
Full Text: PDF (64 kB)
Formation of radiation defects in high-resistivity silicon as a result of cyclic irradiation and annealing
E. M. Verbitskaya, V. K. Eremin, A. M. Ivanov, Z. Li, and B. Schmidt
Full Text: PDF (117 kB)
Photosensitivity of InP/CdS heterostructures in linearly polarized light
V. M. Botnaryuk, L. V. Gorchak, V. N. Pleshka, V. Yu. Rud', and Yu. V. Rud'
Full Text: PDF (80 kB)
Photoelectric properties of porous and single-crystal silicon heterocontacts
V. Yu. Rud' and Yu. V. Rud'
Full Text: PDF (76 kB)
Photoluminescence of anodized layers of CdSiAs2
A. A. Lebedev, Yu. V. Rud', and V. Yu. Rud'
Full Text: PDF (58 kB)
Photoluminescence of anodized silicon carbide
V. F. Agekyan, Yu. A. Stepanov, A. A. Lebedev, A. A. Lebedev, and Yu. V. Rud'
Full Text: PDF (48 kB)
Semiconductors-97: Third Russian Conference on Semiconductor Physics
Full Text: PDF (34 kB)Archived web conten
Semiconductors V. 37, I. 11
No full textSemiconductors -- November 2003
Volume 37, Issue 11, pp. 1243-1362
ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS
Electronic Structure of Cubic Silicon Carbide with Substitutional 3d Impurities at Si and C Sites
N. I. Medvedeva, E. I. Yur'eva, and A. L. Ivanovskii
pp. 1243-1246 Full Text: PDF (63 kB)
Optical and Thermal Properties of CuAlxIn1 – xTe2 Solid Solutions
I. V. Bodnar'
pp. 1247-1251 Full Text: PDF (73 kB)
Defect-Related Luminescence of GaN:Zn Films Thermally Treated in a Radio-Frequency Ammonia Plasma
G. A. Sukach, V. V. Kidalov, A. I. Vlasenko, and E. P. Potapenko
pp. 1252-1256 Full Text: PDF (63 kB)
Effective Electron Mass in a MnxHg1 – xTe System
I. M. Nesmelova
pp. 1257-1258 Full Text: PDF (29 kB)
Effect of Grain Boundaries on the Properties of Cadmium Telluride Grown under Nonequilibrium Conditions
V. V. Ushakov and Yu. V. Klevkov
pp. 1259-1263 Full Text: PDF (295 kB)
Ultraviolet Luminescence of Thin GaN Films Grown by Radical-Beam Gettering Epitaxy on Porous GaAs(111) Substrates
V. V. Kidalov, G. A. Sukach, A. S. Revenko, and E. P. Potapenko
pp. 1264-1265 Full Text: PDF (30 kB)
Hopping Polarization Photoconductivity of Silicon with the Involvement of Impurity Pairs of Groups III and V
Ya. E. Pokrovskii and N. A. Khval'kovskii
pp. 1266-1274 Full Text: PDF (133 kB)
Defect Formation in PbTe under the Action of a Laser Shock Wave
V. S. Yakovyna, D. M. Zayachuk, and N. N. Berchenko
pp. 1275-1277 Full Text: PDF (42 kB)
Galvanomagnetic Effects in Atomic-Disordered HgSe1 – xSx Compounds
A. E. Kar'kin, V. V. Shchennikov, S. E. Danilov, V. A. Arbuzov, and B. N. Goshchitskii
pp. 1278-1282 Full Text: PDF (74 kB)
SEMICONDUCTOR STRUCTURES, INTERFACES, AND SURFACES
Photosensitive Structure on CdGa2S4 Single Crystals
V. Yu. Rud', Yu. V. Rud', A. A. Vaipolin, I. V. Bodnar', and N. Fernelius
pp. 1283-1290 Full Text: PDF (115 kB)
Photoelectric Phenomena in ZnO:Al–p-Si Heterostructures
S. E. Nikitin, Yu. A. Nikolaev, I. K. Polushina, V. Yu. Rud', Yu. V. Rud', and E. I. Terukov
pp. 1291-1295 Full Text: PDF (77 kB)
The Thermoelectric Power of a Semiconductor p–n Heterojunction
M. M. Gadzhialiev and Z. Sh. Pirmagomedov
pp. 1296-1298 Full Text: PDF (45 kB)
On the Influence of a Si Single-Crystal Real Surface on the Low-Frequency Internal Friction and the Behavior of an Effective Shear Modulus
A. V. Oleinich-Lysyuk, N. P. Beshley, and I. M. Fodchuk
pp. 1299-1302 Full Text: PDF (55 kB)
Charge Fluctuations at the Bonding Interface in the Silicon-on-Insulator Structures
I. V. Antonova, V. A. Stuchinskii, O. V. Naumova, D. V. Nikolaev, and V. P. Popov
pp. 1303-1307 Full Text: PDF (69 kB)
Photosensitive Structures Based on In2S3 Crystals
I. V. Bodnar', V. A. Polubok, V. Yu. Rud', and Yu. V. Rud'
pp. 1308-1310 Full Text: PDF (50 kB)
Kinetics of the Initial Stage in Chalcogenide Passivation of III–V Semiconductors
V. F. Antyushin, A. V. Budanov, D. S. Kukharenko, and D. A. Palishkin
pp. 1311-1314 Full Text: PDF (51 kB)
LOW-DIMENSIONAL SYSTEMS
Pulsed-Laser Modification of Germanium Nanoclusters in Silicon
V. A. Volodin, E. I. Gatskevich, A. V. Dvurechenskii, M. D. Efremov, G. D. Ivlev, A. I. Nikiforov, D. A. Orekhov, and A. I. Yakimov
pp. 1315-1320 Full Text: PDF (80 kB)
Photoluminescence from Cadmium Sulfide Nanoclusters Formed in the Matrix of a Langmuir–Blodgett Film
E. A. Bagaev, K. S. Zhuravlev, L. L. Sveshnikova, I. A. Badmaeva, S. M. Repinskii, and M. Voelskow
pp. 1321-1325 Full Text: PDF (73 kB)
Optical Properties of MBE-Grown Ultrathin GaAsN Insertions in GaAs Matrix
N. V. Kryzhanovskaya, A. G. Gladyshev, A. R. Kovsh, I. P. Soshnikov, A. F. Tsatsul'nikov, H. Kirmse, W. Neumann, J. Y. Chi, J. S. Wang, L. Wei, N. N. Ledentsov, and V. M. Ustinov
pp. 1326-1330 Full Text: PDF (107 kB)
Spontaneous Formation of the Periodic Composition-Modulated Nanostructure in CdxHg1 – xTe Films
P. A. Bakhtin, V. S. Varavin, S. A. Dvoretskii, A. F. Kravchenko, A. V. Latyshev, N. N. Mikchailov, I. V. Sabinina, Yu. G. Sidorov, and M. V. Yakushev
pp. 1331-1335 Full Text: PDF (132 kB)
Excitonic Recombination near the Mobility Edge in CdSe/ZnSe Nanostructures
M. Ya. Valakh, M. P. Lisitsa, V. V. Strelchuk, M. V. Vuychik, S. V. Ivanov, A. A. Toropov, T. V. Shubina, and P. S. Kop'ev
pp. 1336-1341 Full Text: PDF (81 kB)
AMORPHOUS, VITREOUS, AND POROUS SEMICONDUCTORS
Extremal Dependence of the Concentration of Paramagnetic Centers Related to Dangling Bonds in Si on Ion-Irradiation Dose as Evidence of Nanostructuring
D. I. Tetelbaum, A. A. Ezhevskii, and A. N. Mikhaylov
pp. 1342-1344 Full Text: PDF (45 kB)
PHYSICS OF SEMICONDUCTOR DEVICES
Ge/Si Photodiodes with Embedded Arrays of Ge Quantum Dots for the Near Infrared (1.3–1.5 µm) Region
A. I. Yakimov, A. V. Dvurechenskii, A. I. Nikiforov, S. V. Chaikovskii, and S. A. Tiis
pp. 1345-1349 Full Text: PDF (185 kB)
Thermoelements with Side Heat Exchange
A. A. Ashcheulov, V. G. Okhrem, and E. A. Okhrem
pp. 1350-1355 Full Text: PDF (74 kB)
1.7–1.8 µm Diode Lasers Based on Quantum-Well InGaAsP/InP Heterostructures
A. V. Lyutetskii, N. A. Pikhtin, S. O. Slipchenko, Z. N. Sokolova, N. V. Fetisova, A. Yu. Leshko, V. V. Shamakhov, A. Yu. Andreev, E. G. Golikova, Yu. A. Ryaboshtan, and I. S. Tarasov
pp. 1356-1362 Full Text: PDF (99 kB)Archived web conten
Semiconductors V. 33, I. 10
No full textSemiconductors -- October 1999
Volume 33, Issue 10, pp. 1049-1155
ATOMIC STRUCTURE AND NON-ELECTRONIC PROPERTIES OF SEMICONDUCTORS
Pressure-induced formation of thermal donor centers in silicon after oxygen ion bombardment
I. V. Antonova, V. P. Popov, D. V. Kilanov, E. P. Neustroev, and A. Misuk
Full Text: PDF (55 kB)
Distinctive features of molecular-beam epitaxial growth of silicon on Si (100) surfaces in the presence of arsenic
G. É. Tsirlin, V. N. Petrov, N. K. Polyakov, S. A. Masalov, A. O. Golubok, D. V. Denisov, Yu. A. Kudryavtsev, B. Ya. Ber, and V. M. Ustinov
Full Text: PDF (553 kB)
ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS
Detection of paramagnetic recombination centers in proton-irradiated silicon
L. S. Vlasenko, M. P. Vlasenko, V. A. Kozlov, and V. V. Kozlovskii
Full Text: PDF (47 kB)
Luminescence properties of InAs layers and p–n structures grown by metallorganic chemical vapor deposition
T. I. Voronina, N. V. Zotova, S. S. Kizhayev, S. S. Molchanov, and Yu. P. Yakovlev
Full Text: PDF (68 kB)
Optical properties of gallium nitride bulk crystals grown by chloride vapor phase epitaxy
A. S. Zubrilov, Yu. V. Melnik, A. E. Nikolaev, M. A. Jacobson, D. K. Nelson, and V. A. Dmitriev
Full Text: PDF (70 kB)
The energy spectrum of lead selenide implanted with oxygen
A. N. Veis and N. A. Suvorova
Full Text: PDF (63 kB)
Autosolitons in an electron–hole plasma/excitons system in silicon at 4.2 K
A. M. Musaev
Full Text: PDF (57 kB)
Influence of indium doping on the formation of silicon–(gallium vacancy) complexes in gallium arsenide grown by molecular-beam epitaxy at low temperatures
A. E. Kunitsyn, V. V. Chaldyshev, S. P. Vul', V. V. Preobrazhenskii, M. A. Putyato, and B. R. Semyagin
Full Text: PDF (55 kB)
Oxygen and Erbium related donor centers in Czochralski grown silicon implanted with erbium
V. V. Emtsev, V. V. Emtsev, Jr., D. S. Poloskin, E. I. Shek, N. A. Sobolev, J. Michel, and L. C. Kimerling
Full Text: PDF (66 kB)
SEMICONDUCTORS STRUCTURES,INTERFACES,AND SURFACES
Electronic properties of a GaAs surface treated with hydrochloric acid
E. F. Venger, S. I. Kirillova, and V. E. Primachenko
Full Text: PDF (70 kB)
Photoconversion in heterocontacts of CdTe and its analogs with protein
Yu. V. Rud', V. Yu. Rud', I. V. Bodnar', V. V. Shatalova, and G. A. Il'chuk
Full Text: PDF (57 kB)
Fabrication and photosensitivity of AgInSe2/III–VI isotypic heterojunctions
V. Yu. Rud', V. F. Gremenok, Yu. V. Rud', R. N. Bekimbetov, and I. V. Bodnar'
Full Text: PDF (44 kB)
Influence of atomic-hydrogen treatment on the surface properties of n–n+ GaAs structures
N. A. Torkhov and S. V. Eremeev
Full Text: PDF (1173 kB)
Production and properties of In/HgGa2S4 Schottky barriers
V. Yu. Rud', Yu. V. Rud', M. C. Ohmer, and P. G. Schunemann
Full Text: PDF (47 kB)
Effect of hydrogen on the current–voltage characteristics of Pd/p-InGaAsP and Pd/n-InGaAs barrier structures
V. P. Voronkov and L. S. Khludkova
Full Text: PDF (52 kB)
LOW-DIMENSIONAL SYSTEMS
Determination of the electron mobility and density in thin semiconductor films at microwave frequencies using the magnetoplasma resonance
P. A. Borodovskii and A. F. Buldygin
Full Text: PDF (65 kB)
Modeling of the electron distribution in AlGaAs/GaAs (delta-Si) structures grown on vicinal surfaces
V. M. Osadchii
Full Text: PDF (43 kB)
Effect of the configuration of a quantum wire on the electron–phonon interaction
O. V. Kibis
Full Text: PDF (46 kB)
Inelastic scattering of hot electrons by neutral donors in heavily silicon-doped GaAs/AlAs quantum wells
I. A. Akimov, V. F. Sapega, D. N. Mirlin, B. P. Zakharchenya, V. M. Ustinov, A. E. Zhukov, A. Yu. Egorov, and A. A. Sirenko
Full Text: PDF (58 kB)
Momentum relaxation time and temperature dependence of electron mobility in semiconductor superlattices consisting of weakly interacting quantum wells
S. I. Borisenko
Full Text: PDF (82 kB)
Determination of the density of states in quantum wells and quantum dot arrays by the capacitance-voltage method
V. Ya. Aleshkin, N. A. Bekin, M. N. Buyanova, A. V. Murel', and B. N. Zvonkov
Full Text: PDF (83 kB)
AMORPHOUS,GLASSY,AND POROUS SEMICONDUCTORS
Role of impurities in the formation of silicyne (long-chain silicon): theory and experiment
A. I. Mashin, A. F. Khokhlov, S. K. Ignatov, A. A. Shchepalov, and A. G. Razuvaev
Full Text: PDF (70 kB)
Formation of optically active centers in films of erbium-doped amorphous hydrated silicon
M. M. Mezdrogina, M. P. Annaorazova, E. I. Terukov, I. N. Trapeznikova, and N. Nazarov
Full Text: PDF (51 kB)
Variation of the parameters and composition of thin films of porous silicon as a result of oxidation: ellipsometric studies
E. V. Astrova, V. B. Voronkov, A. D. Remenyuk, V. B. Shuman, and V. A. Tolmachev
Full Text: PDF (102 kB)Archived web conten
Kolichestviennoe pojavlenie samykh vazhnykh posredstviennykh khozjaev Moniezia (M.) expansa (Rud.) v okrestnostjakh Poznanja
No full textIn this paper the author presents data concerning quantitative occurrence of the Oribatei - intermediate hosts of Moniezia (M.) expansa (Rud.) in some plant associations: Mol - Molinietum coeruleae (wet meadows), Arrh – Arrhenatheretum elatioris (fresh meadows), Aln - Alnetum glutinosae typicum (alder wood), QC - Querceto-Carpinetum (oak-horn-beam-wood), DP - Dicrano-Pinetum (pine-wood) in the vicinity of Poznań (table 1). The numbers mean specimens per sq. m. The quantity found means the number of specimens received in the Tullgren apparatus. The real quantity is calculated by applying the correction after Forsslund, 1948 and Müller-Naglitsch, 1957. Further on the author discusses the results: The Oribatei - intermediate hosts of Anoplocephalata are more abundant in the meadows (39-51 thousands per sq. m.) than in the woods (17-26 thousands per sq. m.). In the different habitats (meadows, woods) the quantity of the intermediate hosts increases with the humidity of the soil. In the meadows the number of the intermediate hosts is proportional to the whole quantity of the Oribatei. In the woods this relation is rather reversed
Semiconductors V. 33, I. 07
No full textSemiconductors -- July 1999
Volume 33, Issue 7, pp. 707-819
ATOMIC STRUCTURE AND NON-ELECTRONIC PROPERTIES OF SEMICONDUCTORS
Influence of native defects on polytypism in SiC
A. A. Lebedev
Full Text: PDF (34 kB)
Antistructural defects in PbTe-type semiconductors
V. F. Masterov, S. I. Bondarevskii, F. S. Nasredinov, N. P. Seregin, and P. P. Seregin
Full Text: PDF (40 kB)
ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS
Electrical properties of nuclear-doped indium antimonide
N. G. Kolin, D. I. Merkurisov, and S. P. Solov'ev
Full Text: PDF (50 kB)
Study of the polarization photoluminescence of thick epitaxial GaN layers
Yu. V. Zhilyaev, V. V. Krivolapchuk, and I. N. Safronov
Full Text: PDF (44 kB)
Electrical properties of epitaxial indium arsenide and narrow band solid solutions based on it
T. I. Voronina, T. S. Lagunova, K. D. Moiseev, A. E. Rozov, M. A. Sipovskaya, M. V. Stepanov, V. V. Sherstnev, and Yu. P. Yakovlev
Full Text: PDF (79 kB)
Hubbard energy of two-electron tin centers in PbS1 – zTez solid solutions
V. F. Masterov, F. S. Nasredinov, S. A. Nemov, P. P. Seregin, and N. P. Seregin
Full Text: PDF (35 kB)
Investigation of MOVPE-grown GaN layers doped with As atoms
A. F. Tsatsul'nikov, B. Ya. Ber, A. P. Kartashova, Yu. A. Kudryavtsev, N. N. Ledentsov, V. V. Lundin, M. V. Maksimov, A. V. Sakharov, A. S. Usikov, Zh. I. Alfërov, and A. Hoffmann
Full Text: PDF (46 kB)
SEMICONDUCTORS STRUCTURES,INTERFACES,AND SURFACES
Photolectric effects in silicon switching structures utilizing rare-earth fluorides
V. A. Rozhkov and M. B. Shalimova
Full Text: PDF (66 kB)
Fabrication and properties of In2O3/CdS/CuInSe2 heterostructures
V. Yu. Rud' and Yu. V. Rud'
Full Text: PDF (57 kB)
Production and investigation of AgIn5S8/(InSe, GaSe) heterojunctions
I. V. Bodnar', V. F. Gremenok, V. Yu. Rud', and Yu. V. Rud'
Full Text: PDF (54 kB)
Zinc telluride epilayers and CdZnTe/ZnTe quantum wells grown by molecular-beam epitaxy on GaAs(100) substrates using solid-phase crystallization of an amorphous ZnTe seed layer
V. I. Kozlovskii,, A. B. Krysa, Yu. G. Sadof'ev, and A. G. Tur'yanskii
Full Text: PDF (236 kB)
Distribution of the electric field in high-resistivity MSM structures illuminated by nonmonochromatic light
B. I. Reznikov
Full Text: PDF (102 kB)
Heterojunctions utilizing CuInxGa1 – xTe2 thin films
V. Yu. Rud', Yu. V. Rud', R. N. Bekimbetov, V. F. Gremenok, I. A. Viktorov, I. V. Bodnar', and D. D. Krivolap
Full Text: PDF (48 kB)
LOW-DIMENSIONAL SYSTEMS
Intraband light absorption in quasi-two-dimensional systems in external electric and magnetic fields
É. P. Sinyavskii and S. M. Sokovnich
Full Text: PDF (65 kB)
Polar state of a particle with a degenerate band spectrum in a quantum dot
I. P. Ipatova, A. Yu. Maslov, and O. V. Proshina
Full Text: PDF (85 kB)
Transport and optical properties of tin delta-doped GaAs structures
V. A. Kul'bachinskii, V. G. Kytin, R. A. Lunin, V. G. Mokerov, A. P. Senichkin, A. S. Bugaev, A. L. Karuzskii, A. V. Perestoronin, R. T. F. van Schaijk, and A. de Visser
Full Text: PDF (118 kB)
Collective resonances and shape function for homogeneous broadening of the emission spectra of quantum-well semiconductor heterostructures
A. M. Georgievskii, S. V. Zaitsev, N. Yu. Gordeev, V. I. Kopchatov, L. Ya. Karachinskii, I. I. Novikov, and P. S. Kop'ev
Full Text: PDF (47 kB)
Electron-beam-induced conductivity in self-organized silicon quantum wells
A. N. Andronov, S. V. Robozerov, N. T. Bagraev, L. E. Klyachkin, and A. M. Malyarenko
Full Text: PDF (105 kB)
Self-organized nanoscale InP islands in an InGaP/GaAs host and InAs islands in an InGaAs/InP host
D. A. Vinokurov, V. A. Kapitonov, O. V. Kovalenkov, D. A. Livshits, Z. N. Sokolova, I. S. Tarasov, and Zh. I. Alferov
Full Text: PDF (225 kB)
AMORPHOUS,GLASSY,AND POROUS SEMICONDUCTORS
Photocapacitance relaxation in amorphous As2Se3 films
I. A. Vasiliev and S. D. Shutov
Full Text: PDF (53 kB)
Controlling the U–-center density in Se–As chalcogenide-glass semiconductors by doping with metals and halogens
L. P. Kazakova and K. D. Tsendin
Full Text: PDF (55 kB)
PHYSICS OF SEMICONDUCTOR DEVICES
Theory of photoresistors based on trapezoidal delta-doped superlattices
V. V. Osipov, A. Yu. Selyakov, and M. Foygel
Full Text: PDF (81 kB)
A comparison of the temperature dependences of photoeffect quantum efficiencies in GaAs p – n structures and Schottky diodes
Yu. A. Goldberg, O. V. Konstantinov, V. M. Lantratov, O. I. Obolensky, T. V. Petelina, E. A. Posse, and M. Z. Shvarts
Full Text: PDF (55 kB)
Fabrication of discrete p – n junctions separated by an insulating layer using direct wafer bonding
E. G. Guk, B. G. Podlaskin, N. A. Tokranova, V. B. Voronkov, and V. A. Kozlov
Full Text: PDF (141 kB)
Polarization selection in VCSELs due to current carrier heating
B. S. Ryvkin and A. M. Georgievskii
Full Text: PDF (116 kB)Archived web conten
Semiconductors V. 34, I. 06
No full textSemiconductors -- June 2000
Volume 34, Issue 6, pp. 615-740
ATOMIC STRUCTURE AND NONELECTRONIC PROPERTIES OF SEMICONDUCTORS
Investigation of the Influence of External Effects on the Behavior of Gold Impurity in Silicon
S. Z. Zainabidinov, O. O. Mamatkarimov, I. G. Tursunov, and U. A. Tuichiev
pp. 615-617 Full Text: PDF (42 kB)
Internal Friction Related to Changes in the Shape of Small Inclusions
Yu. N. Andreev, B. M. Darinskii, V. A. Moshnikov, D. S. Saiko, and N. P. Yaroslavtsev
pp. 618-620 Full Text: PDF (41 kB)
Specifics of MOCVD Formation of InxGa1 – xN Inclusions in a GaN Matrix
I. P. Soshnikov, V. V. Lundin, A. S. Usikov, I. P. Kalmykova, N. N. Ledentsov, A. Rosenauer, B. Neubauer, and D. Gerthsen
pp. 621-625 Full Text: PDF (200 kB)
ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS
Interband Emission of Cadmium Thiogallate
A. I. Machuga, V. F. Zhitar', and E. D. Arama
pp. 626-628 Full Text: PDF (39 kB)
Redistribution of Phosphorus Implanted into Silicon Doped Heavily with Boron
E. G. Tishkovskii, V. I. Obodnikov, A. A. Taskin, K. V. Feklistov, and V. G. Seryapin
pp. 629-633 Full Text: PDF (64 kB)
Multiphonon Capture of Charge Carriers by Deep-Level Centers in a Depletion Region of a Semiconductor
M. A. Dem'yanenko, V. N. Ovsyuk, and V. V. Shashkin
pp. 634-640 Full Text: PDF (97 kB)
Temperature Dependences of Electrical Properties of n-type PbSe Single-Crystalline Films Subjected to alpha-Particle Bombardment
Ya. P. Salii and R. Ya. Salii
pp. 641-643 Full Text: PDF (45 kB)
Charge Carrier Mobility in n-CdxHg1 – xTe Crystals Subjected to Dynamic Ultrasonic Stressing
A. I. Vlasenko, Ya. M. Olikh, and R. K. Savkina
pp. 644-649 Full Text: PDF (86 kB)
On the Origin of the Thermal–Field Asymmetry in Ionic Polarization/Depolarization of Oxide in Si-MOS Structures
E. I. Gol'dman, A. G. Zhdan, and G. V. Chucheva
pp. 650-654 Full Text: PDF (77 kB)
Equilibrium Energy Distribution of Localized Carriers in Disordered Semiconductors Subjected to an External Electric Field at Low Temperature
D. V. Nikolaenkov, V. I. Arkhipov, and V. R. Nikitenko
pp. 655-657 Full Text: PDF (40 kB)
Photoelectric Phenomena in a-Si:H/p-CuInSe2 Heterostructures
Yu. A. Nikolaev, V. Yu. Rud', Yu. V. Rud', and E. I. Terukov
pp. 658-661 Full Text: PDF (63 kB)
SEMICONDUCTOR STRUCTURES, INTERFACES, AND SURFACES
Thermoelectric and Photoelectric Properties of the p–n CuInSe2/CdS Heterostructures Obtained by the Quasi-Equilibrium Deposition Method
M.-R. A. Magomedov, Sh. M. Ismailov, Dzh. Kh. Magomedova, and P. P. Khokhlachev
pp. 662-664 Full Text: PDF (50 kB)
Critical Voltage Growth Rate when Initiating the Ultrafast Impact Ionization Front in a Diode Structure
A. M. Minarskii and P. B. Rodin
pp. 665-667 Full Text: PDF (48 kB)
Special Features of Generation–Recombination Processes in the p–n Junctions Based on HgMnTe
L. A. Kosyachenko, S. É. Ostapov, and Sun Weiguo
pp. 668-670 Full Text: PDF (48 kB)
Influence of SiO2 Protective Films on the Diffusion of Atomic Hydrogen during the Hydrogenation of Epitaxial n-GaAs
A. V. Panin and N. A. Torkhov
pp. 671-676 Full Text: PDF (457 kB)
Photosensitivity of a-Si:H/n-InSe Heterocontacts
Yu. A. Nikolaev, V. Yu. Rud', Yu. V. Rud', and E. I. Terukov
pp. 677-679 Full Text: PDF (54 kB)
Surface Magnetoplasma Waves in a Ferromagnetic Semiconductor and their Excitation by a Magnetic Dipole
V. L. Fal'ko, S. I. Khankina, and V. M. Yakovenko
pp. 680-685 Full Text: PDF (75 kB)
LOW-DIMENSIONAL SYSTEMS
Reflection Coefficient of a Semiconductor Superlattice Subjected to a Magnetic Field
A. A. Bulgakov and O. V. Shramkova
pp. 686-692 Full Text: PDF (96 kB)
Low-Temperature Photoluminescence and X-ray Diffractometry Study of InxGa1 – xAs Quantum Wells
S. V. Evstigneev, R. M. Imamov, A. A. Lomov, Yu. G. Sadof'ev, Yu. V. Khabarov, M. A. Chuev, and D. S. Shipitsin
pp. 693-699 Full Text: PDF (93 kB)
Self-Ordered Microcavities Embedded in Ultrashallow Silicon p–n Junctions
N. T. Bagraev, A. D. Buravlev, L. E. Klyachkin, A. M. Malyarenko, and S. A. Rykov
pp. 700-711 Full Text: PDF (652 kB)
Ballistic Conductance of a Quantum Wire at Finite Temperatures
N. T. Bagraev, V. K. Ivanov, L. E. Klyachkin, A. M. Malyarenko, and I. A. Shelykh
pp. 712-716 Full Text: PDF (65 kB)
AMORPHOUS, VITREOUS, AND POROUS SEMICONDUCTORS
Kinetics of Light-Induced Degradation in a-Si:H Films Investigated by Computer Simulation
M. N. Meytin, M. Zeman, B. G. Budaguan, and J. W. Metselaar
pp. 717-722 Full Text: PDF (92 kB)
The Staebler–Wronski Effect and Temperature Dependences of Photoconductivity in p-type a-Si:H
S. V. Kuznetsov
pp. 723-727 Full Text: PDF (83 kB)
Modification of Optoelectronic Properties of Porous Silicon Produced in an Electrolyte Based on Heavy Water
B. V. Kamenev, E. A. Konstantinova, P. K. Kashkarov, and V. Yu. Timoshenko
pp. 728-731 Full Text: PDF (231 kB)
Optical and Electrical Properties of Porous Gallium Arsenide
N. S. Averkiev, L. P. Kazakova, É. A. Lebedev, Yu. V. Rud', A. N. Smirnov, and N. N. Smirnova
pp. 732-736 Full Text: PDF (79 kB)
Effect of Nanocrystalline Inclusions on the Photosensitivity of Amorphous Hydrogenated Silicon Films
O. A. Golikova and M. M. Kazanin
pp. 737-740 Full Text: PDF (60 kB)Archived web conten
Semiconductors V. 34, I. 06
No full textdc.description[en_US]Semiconductors -- June 2000
Volume 34, Issue 6, pp. 615-740
ATOMIC STRUCTURE AND NONELECTRONIC PROPERTIES OF SEMICONDUCTORS
Investigation of the Influence of External Effects on the Behavior of Gold Impurity in Silicon
S. Z. Zainabidinov, O. O. Mamatkarimov, I. G. Tursunov, and U. A. Tuichiev
pp. 615-617 Full Text: PDF (42 kB)
Internal Friction Related to Changes in the Shape of Small Inclusions
Yu. N. Andreev, B. M. Darinskii, V. A. Moshnikov, D. S. Saiko, and N. P. Yaroslavtsev
pp. 618-620 Full Text: PDF (41 kB)
Specifics of MOCVD Formation of InxGa1 ��� xN Inclusions in a GaN Matrix
I. P. Soshnikov, V. V. Lundin, A. S. Usikov, I. P. Kalmykova, N. N. Ledentsov, A. Rosenauer, B. Neubauer, and D. Gerthsen
pp. 621-625 Full Text: PDF (200 kB)
ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS
Interband Emission of Cadmium Thiogallate
A. I. Machuga, V. F. Zhitar', and E. D. Arama
pp. 626-628 Full Text: PDF (39 kB)
Redistribution of Phosphorus Implanted into Silicon Doped Heavily with Boron
E. G. Tishkovskii, V. I. Obodnikov, A. A. Taskin, K. V. Feklistov, and V. G. Seryapin
pp. 629-633 Full Text: PDF (64 kB)
Multiphonon Capture of Charge Carriers by Deep-Level Centers in a Depletion Region of a Semiconductor
M. A. Dem'yanenko, V. N. Ovsyuk, and V. V. Shashkin
pp. 634-640 Full Text: PDF (97 kB)
Temperature Dependences of Electrical Properties of n-type PbSe Single-Crystalline Films Subjected to alpha-Particle Bombardment
Ya. P. Salii and R. Ya. Salii
pp. 641-643 Full Text: PDF (45 kB)
Charge Carrier Mobility in n-CdxHg1 ��� xTe Crystals Subjected to Dynamic Ultrasonic Stressing
A. I. Vlasenko, Ya. M. Olikh, and R. K. Savkina
pp. 644-649 Full Text: PDF (86 kB)
On the Origin of the Thermal���Field Asymmetry in Ionic Polarization/Depolarization of Oxide in Si-MOS Structures
E. I. Gol'dman, A. G. Zhdan, and G. V. Chucheva
pp. 650-654 Full Text: PDF (77 kB)
Equilibrium Energy Distribution of Localized Carriers in Disordered Semiconductors Subjected to an External Electric Field at Low Temperature
D. V. Nikolaenkov, V. I. Arkhipov, and V. R. Nikitenko
pp. 655-657 Full Text: PDF (40 kB)
Photoelectric Phenomena in a-Si:H/p-CuInSe2 Heterostructures
Yu. A. Nikolaev, V. Yu. Rud', Yu. V. Rud', and E. I. Terukov
pp. 658-661 Full Text: PDF (63 kB)
SEMICONDUCTOR STRUCTURES, INTERFACES, AND SURFACES
Thermoelectric and Photoelectric Properties of the p���n CuInSe2/CdS Heterostructures Obtained by the Quasi-Equilibrium Deposition Method
M.-R. A. Magomedov, Sh. M. Ismailov, Dzh. Kh. Magomedova, and P. P. Khokhlachev
pp. 662-664 Full Text: PDF (50 kB)
Critical Voltage Growth Rate when Initiating the Ultrafast Impact Ionization Front in a Diode Structure
A. M. Minarskii and P. B. Rodin
pp. 665-667 Full Text: PDF (48 kB)
Special Features of Generation���Recombination Processes in the p���n Junctions Based on HgMnTe
L. A. Kosyachenko, S. �. Ostapov, and Sun Weiguo
pp. 668-670 Full Text: PDF (48 kB)
Influence of SiO2 Protective Films on the Diffusion of Atomic Hydrogen during the Hydrogenation of Epitaxial n-GaAs
A. V. Panin and N. A. Torkhov
pp. 671-676 Full Text: PDF (457 kB)
Photosensitivity of a-Si:H/n-InSe Heterocontacts
Yu. A. Nikolaev, V. Yu. Rud', Yu. V. Rud', and E. I. Terukov
pp. 677-679 Full Text: PDF (54 kB)
Surface Magnetoplasma Waves in a Ferromagnetic Semiconductor and their Excitation by a Magnetic Dipole
V. L. Fal'ko, S. I. Khankina, and V. M. Yakovenko
pp. 680-685 Full Text: PDF (75 kB)
LOW-DIMENSIONAL SYSTEMS
Reflection Coefficient of a Semiconductor Superlattice Subjected to a Magnetic Field
A. A. Bulgakov and O. V. Shramkova
pp. 686-692 Full Text: PDF (96 kB)
Low-Temperature Photoluminescence and X-ray Diffractometry Study of InxGa1 ��� xAs Quantum Wells
S. V. Evstigneev, R. M. Imamov, A. A. Lomov, Yu. G. Sadof'ev, Yu. V. Khabarov, M. A. Chuev, and D. S. Shipitsin
pp. 693-699 Full Text: PDF (93 kB)
Self-Ordered Microcavities Embedded in Ultrashallow Silicon p���n Junctions
N. T. Bagraev, A. D. Buravlev, L. E. Klyachkin, A. M. Malyarenko, and S. A. Rykov
pp. 700-711 Full Text: PDF (652 kB)
Ballistic Conductance of a Quantum Wire at Finite Temperatures
N. T. Bagraev, V. K. Ivanov, L. E. Klyachkin, A. M. Malyarenko, and I. A. Shelykh
pp. 712-716 Full Text: PDF (65 kB)
AMORPHOUS, VITREOUS, AND POROUS SEMICONDUCTORS
Kinetics of Light-Induced Degradation in a-Si:H Films Investigated by Computer Simulation
M. N. Meytin, M. Zeman, B. G. Budaguan, and J. W. Metselaar
pp. 717-722 Full Text: PDF (92 kB)
The Staebler���Wronski Effect and Temperature Dependences of Photoconductivity in p-type a-Si:H
S. V. Kuznetsov
pp. 723-727 Full Text: PDF (83 kB)
Modification of Optoelectronic Properties of Porous Silicon Produced in an Electrolyte Based on Heavy Water
B. V. Kamenev, E. A. Konstantinova, P. K. Kashkarov, and V. Yu. Timoshenko
pp. 728-731 Full Text: PDF (231 kB)
Optical and Electrical Properties of Porous Gallium Arsenide
N. S. Averkiev, L. P. Kazakova, �. A. Lebedev, Yu. V. Rud', A. N. Smirnov, and N. N. Smirnova
pp. 732-736 Full Text: PDF (79 kB)
Effect of Nanocrystalline Inclusions on the Photosensitivity of Amorphous Hydrogenated Silicon Films
O. A. Golikova and M. M. Kazanin
pp. 737-740 Full Text: PDF (60 kB)dc.description.contributor[en_US]dc.description.contributor[en_US
Semiconductors V. 32, I. 10
No full textleave(s) : ill; 28 cm.Semiconductors -- October 1998
Volume 32, Issue 10, pp. 1029-1140
ATOMIC STRUCTURE AND NON-ELECTRONIC PROPERTIES OF SEMICONDUCTORS
Activation and distribution of silicon implanted in gallium arsenide as a result of isothermal radiation annealing
V. M. Ardyshev and M. V. Ardyshev
Full Text: PDF (84 kB)
Equilibrium of native point defects in tin dioxide
K. P. Bogdanov, D. Ts. Dimitrov, O. F. Lutskaya, and Yu. M. Tairov
Full Text: PDF (76 kB)
Arsenic cluster superlattice in gallium arsenide grown by low-temperature molecular-beam epitaxy
V. V. Chaldyshev, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin, N. A. Bert, A. E. Kunitsyn, Yu. G. Musikhin, V. V. Tret'yakov, and P. Werner
Full Text: PDF (740 kB)
ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS
Photoconductivity of copper-compensated gallium phosphide
N. N. Pribylov, S. I. Rembeza, A. I. Spirin, V. A. Buslov, and S. A. Sushkov
Full Text: PDF (94 kB)
Accumulation of electrons in GaAs layers grown at low temperatures and containing arsenic clusters
P. N. Brunkov, V. V. Chaldyshev, N. A. Bert, A. A. Suvorova, S. G. Konnikov, A. V. Chernigovskii, V. V. Preobrazhenskii, M. A. Putyato, and B. R. Semyagin
Full Text: PDF (297 kB)
Study of GaN thin layers subjected to high-temperature rapid thermal annealing
N.I. Katsavets, G. M. Laws, I. Harrison, E. C. Larkins, T. M. Benson, T. S. Cheng, and C. T. Foxon
Full Text: PDF (83 kB)
Nitrogen divacancies ��� the possible cause of the "yellow band" in the luminescence spectra of GaN
A. �. Yunovich
Full Text: PDF (60 kB)
A new recombination center in heavily doped GaAs : Zn grown by liquid-phase epitaxy
K. S. Zhuravlev, T. S. Shamirzaev, N. A. Yakusheva, and I. P. Petrenko
Full Text: PDF (104 kB)
Effect of In doping on the kinetic coefficients in solid solutions of the system (PbzSn1 ��� z)0.95Ge0.05Te
S. A. Nemov, V. I. Proshin, and S. M. Nakhmanson
Full Text: PDF (74 kB)
Differential methods for determination of deep-level parameters from recombination currents of p���n junctions
S. V. Bulyarskii, N. S. Grushko, and A. V. Lakalin
Full Text: PDF (109 kB)
Experimental corrections for the hot hole distribution function in germanium in crossed electric and magnetic fields
V. N. Tulupenko
Full Text: PDF (90 kB)
Influence of nonuniform spatial distribution of nonequilibrium carriers on the edge emission spectra of direct-gap semiconductors
P. G. Lukashevich
Full Text: PDF (60 kB)
SEMICONDUCTORS STRUCTURES,INTERFACES,AND SURFACES
Optoelectronic phenomena in GaAs and GaP layers prepared by nitrogen treatment
V. F. Agekyan, V. I. Ivanov-Omskii, V. N. Knyazevskii, Yu. V. Rud', and V. Yu. Rud'
Full Text: PDF (46 kB)
Photoelectric properties of GaN/GaP heterostructures
V. M. Botnaryuk, S. D. Raevskii, V. V. Bel'kov, Yu. V. Zhilyaev, Yu. V. Rud', L. M. Fedorov, and V. Yu. Rud'
Full Text: PDF (79 kB)
Photoluminescence of the space charge region of metal���zinc selenide contacts
V. P. Makhnii and M. M. Sletov
Full Text: PDF (57 kB)
The nature of the deep levels responsible for photoelectric memory in GaAs/AlGaAs multilayer quantum-well structures
V. N. Ovsyuk, M. A. Dem'yanenko, V. V. Shashkin, and A. I. Toropov
Full Text: PDF (113 kB)
LOW-DIMENSIONAL SYSTEMS
Weak localization in p-type quantum wells
N. S. Averkiev, L. E. Golub, and G. E. Pikus
Full Text: PDF (238 kB)
Capacitance-voltage profiling of Au/n-GaAs Schottky barrier structures containing a layer of self-organized InAs quantum dots
P. N. Brunkov, A. A. Suvorova, N. A. Bert, A. R. Kovsh, A. E. Zhukov, A. Yu. Egorov, V. M. Ustinov, A. F. Tsatsul'nikov, N. N. Ledentsov, P. S. Kop'ev, S. G. Konnikov, L. Eaves, and P. S. Main
Full Text: PDF (297 kB)
Electron-hole Coulomb interaction in InGaN quantum dots
V. E. Bugrov and O. V. Konstantinov
Full Text: PDF (119 kB)
Shallow acceptors in strained multiquantum-well Ge/Ge1 ��� xSix heterostructures
V. Ya. Aleshkin, V. I. Gavrilenko, I. V. Erofeeva, D. V. Kozlov, M. D. Moldavskaya, and O. A. Kuznetsov
Full Text: PDF (119 kB)
Potential difference and photovoltaic effect arising from distortion of the electron wave function in a GaAs quantum well with a thin AlGaAs barrier
Yu. Pozhela and K. Pozhela
Full Text: PDF (114 kB)
Effect of partial ordering of a two-dimensional system of scatterers on the anisotropy of its kinetic coefficients
N. S. Averkiev, A. M. Monakhov, A. Yu. Shik, and P. M. Koenraad
Full Text: PDF (86 kB)
Polarization of in-plane photoluminescence from InAs / Ga(In)As quantum-well layers grown by metallorganic vapor-phase epitaxy
V. Ya. Aleshkin, B. N. Zvonkov, I. G. Malkina, Yu. N. Saf'yanov, A. L. Chernov, and D. O. Filatov
Full Text: PDF (94 kB)
AMORPHOUS,GLASSY,AND POROUS SEMICONDUCTORS
Doping and impurity compensation by ion implantation in a-SiGe films
A. V. Ershov, A. I. Mashin, and A. F. Khokhlov
Full Text: PDF (76 kB)
Long-term structural relaxation and photoinduced degradation in a-Si : H
K. V. Kougia and A. B. Pevtsov
Full Text: PDF (63 kB)
Heterogeneity and photoconductivity kinetics in amorphous hydrogenated silicon
K. V. Kougia, E. I. Terukov, and V. Fus
Full Text: PDF (55 kB)
Relaxation of photoinduced metastable states in a-Si:H films deposited at high temperatures
I. A. Kurova, N. N. Ormont, O. A. Golikova, and M. M. Kazanin
Full Text: PDF (61 kB)
PHYSICS OF SEMICONDUCTOR DEVICES
Molecular beam epitaxy of alternating-strain ZnSe-based multilayer heterostructures for blue-green lasers
S. V. Ivanov, A. A. Toropov, S. V. Sorokin, T. V. Shubina, N. D. Il'inskaya, A. V. Lebedev, I. V. Sedova, P. S. Kop'ev, Zh. I. Alferov, H.-J. Lugauer, G. Reuscher, M. Keim, F. Fischer, A. Waag, and G. Landwehr
Full Text: PDF (227 kB)The content contained herein is maintained and curated by the Preservation Department.This record is revised and maintained by the content administrators from the Cataloging & Metadata Department
Semiconductors V. 32, I. 10
No full textSemiconductors -- October 1998
Volume 32, Issue 10, pp. 1029-1140
ATOMIC STRUCTURE AND NON-ELECTRONIC PROPERTIES OF SEMICONDUCTORS
Activation and distribution of silicon implanted in gallium arsenide as a result of isothermal radiation annealing
V. M. Ardyshev and M. V. Ardyshev
Full Text: PDF (84 kB)
Equilibrium of native point defects in tin dioxide
K. P. Bogdanov, D. Ts. Dimitrov, O. F. Lutskaya, and Yu. M. Tairov
Full Text: PDF (76 kB)
Arsenic cluster superlattice in gallium arsenide grown by low-temperature molecular-beam epitaxy
V. V. Chaldyshev, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin, N. A. Bert, A. E. Kunitsyn, Yu. G. Musikhin, V. V. Tret'yakov, and P. Werner
Full Text: PDF (740 kB)
ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS
Photoconductivity of copper-compensated gallium phosphide
N. N. Pribylov, S. I. Rembeza, A. I. Spirin, V. A. Buslov, and S. A. Sushkov
Full Text: PDF (94 kB)
Accumulation of electrons in GaAs layers grown at low temperatures and containing arsenic clusters
P. N. Brunkov, V. V. Chaldyshev, N. A. Bert, A. A. Suvorova, S. G. Konnikov, A. V. Chernigovskii, V. V. Preobrazhenskii, M. A. Putyato, and B. R. Semyagin
Full Text: PDF (297 kB)
Study of GaN thin layers subjected to high-temperature rapid thermal annealing
N.I. Katsavets, G. M. Laws, I. Harrison, E. C. Larkins, T. M. Benson, T. S. Cheng, and C. T. Foxon
Full Text: PDF (83 kB)
Nitrogen divacancies — the possible cause of the "yellow band" in the luminescence spectra of GaN
A. É. Yunovich
Full Text: PDF (60 kB)
A new recombination center in heavily doped GaAs : Zn grown by liquid-phase epitaxy
K. S. Zhuravlev, T. S. Shamirzaev, N. A. Yakusheva, and I. P. Petrenko
Full Text: PDF (104 kB)
Effect of In doping on the kinetic coefficients in solid solutions of the system (PbzSn1 – z)0.95Ge0.05Te
S. A. Nemov, V. I. Proshin, and S. M. Nakhmanson
Full Text: PDF (74 kB)
Differential methods for determination of deep-level parameters from recombination currents of p–n junctions
S. V. Bulyarskii, N. S. Grushko, and A. V. Lakalin
Full Text: PDF (109 kB)
Experimental corrections for the hot hole distribution function in germanium in crossed electric and magnetic fields
V. N. Tulupenko
Full Text: PDF (90 kB)
Influence of nonuniform spatial distribution of nonequilibrium carriers on the edge emission spectra of direct-gap semiconductors
P. G. Lukashevich
Full Text: PDF (60 kB)
SEMICONDUCTORS STRUCTURES,INTERFACES,AND SURFACES
Optoelectronic phenomena in GaAs and GaP layers prepared by nitrogen treatment
V. F. Agekyan, V. I. Ivanov-Omskii, V. N. Knyazevskii, Yu. V. Rud', and V. Yu. Rud'
Full Text: PDF (46 kB)
Photoelectric properties of GaN/GaP heterostructures
V. M. Botnaryuk, S. D. Raevskii, V. V. Bel'kov, Yu. V. Zhilyaev, Yu. V. Rud', L. M. Fedorov, and V. Yu. Rud'
Full Text: PDF (79 kB)
Photoluminescence of the space charge region of metal–zinc selenide contacts
V. P. Makhnii and M. M. Sletov
Full Text: PDF (57 kB)
The nature of the deep levels responsible for photoelectric memory in GaAs/AlGaAs multilayer quantum-well structures
V. N. Ovsyuk, M. A. Dem'yanenko, V. V. Shashkin, and A. I. Toropov
Full Text: PDF (113 kB)
LOW-DIMENSIONAL SYSTEMS
Weak localization in p-type quantum wells
N. S. Averkiev, L. E. Golub, and G. E. Pikus
Full Text: PDF (238 kB)
Capacitance-voltage profiling of Au/n-GaAs Schottky barrier structures containing a layer of self-organized InAs quantum dots
P. N. Brunkov, A. A. Suvorova, N. A. Bert, A. R. Kovsh, A. E. Zhukov, A. Yu. Egorov, V. M. Ustinov, A. F. Tsatsul'nikov, N. N. Ledentsov, P. S. Kop'ev, S. G. Konnikov, L. Eaves, and P. S. Main
Full Text: PDF (297 kB)
Electron-hole Coulomb interaction in InGaN quantum dots
V. E. Bugrov and O. V. Konstantinov
Full Text: PDF (119 kB)
Shallow acceptors in strained multiquantum-well Ge/Ge1 – xSix heterostructures
V. Ya. Aleshkin, V. I. Gavrilenko, I. V. Erofeeva, D. V. Kozlov, M. D. Moldavskaya, and O. A. Kuznetsov
Full Text: PDF (119 kB)
Potential difference and photovoltaic effect arising from distortion of the electron wave function in a GaAs quantum well with a thin AlGaAs barrier
Yu. Pozhela and K. Pozhela
Full Text: PDF (114 kB)
Effect of partial ordering of a two-dimensional system of scatterers on the anisotropy of its kinetic coefficients
N. S. Averkiev, A. M. Monakhov, A. Yu. Shik, and P. M. Koenraad
Full Text: PDF (86 kB)
Polarization of in-plane photoluminescence from InAs / Ga(In)As quantum-well layers grown by metallorganic vapor-phase epitaxy
V. Ya. Aleshkin, B. N. Zvonkov, I. G. Malkina, Yu. N. Saf'yanov, A. L. Chernov, and D. O. Filatov
Full Text: PDF (94 kB)
AMORPHOUS,GLASSY,AND POROUS SEMICONDUCTORS
Doping and impurity compensation by ion implantation in a-SiGe films
A. V. Ershov, A. I. Mashin, and A. F. Khokhlov
Full Text: PDF (76 kB)
Long-term structural relaxation and photoinduced degradation in a-Si : H
K. V. Kougia and A. B. Pevtsov
Full Text: PDF (63 kB)
Heterogeneity and photoconductivity kinetics in amorphous hydrogenated silicon
K. V. Kougia, E. I. Terukov, and V. Fus
Full Text: PDF (55 kB)
Relaxation of photoinduced metastable states in a-Si:H films deposited at high temperatures
I. A. Kurova, N. N. Ormont, O. A. Golikova, and M. M. Kazanin
Full Text: PDF (61 kB)
PHYSICS OF SEMICONDUCTOR DEVICES
Molecular beam epitaxy of alternating-strain ZnSe-based multilayer heterostructures for blue-green lasers
S. V. Ivanov, A. A. Toropov, S. V. Sorokin, T. V. Shubina, N. D. Il'inskaya, A. V. Lebedev, I. V. Sedova, P. S. Kop'ev, Zh. I. Alferov, H.-J. Lugauer, G. Reuscher, M. Keim, F. Fischer, A. Waag, and G. Landwehr
Full Text: PDF (227 kB)Archived web conten
Semiconductors V. 31, I. 07
No full textdc.description[en_US]Semiconductors -- July 1997
Volume 31, Issue 7, pp. 651-761
Effect of impurities with variable valency on the transport phenomena in a quantum well
I. I. Lyapilin
Full Text: PDF (111 kB)
Charge-carrier lifetime in Hg1 ��� xCdxTe (x = 0.22) structures grown by molecular-beam epitaxy
A. V. Voitsekhovskii, Yu. A. Denisov, A. P. Kokhanenko, V. S. Varavin, S. A. Dvoretskii, V. T. Liberman, N. N. Mikhailov, and Yu. G. Sidorov
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Frenkel'���Poole effect for boron impurity in silicon in strong warming electric fields
A. M. Kozlov and V. V. Ryl'kov
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Measurement of the diffusion length of minority charge carriers using real Schottky barriers
N. L. Dmitruk, O. Yu. Borkovskaya, and S. V. Mamykin
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Effect of successive implantation of Ag+(Cu+) and Xe+ ions on the recombination properties of CdxHg1 ��� xTe crystals
M. I. Ibragimova, N. S. Baryshev, V. Yu. Petukhov, and I. B. Khaibullin
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Characteristic features of Raman scattering of light in silicon doped with high krypton doses
M. F. Galyautdinov, N. V. Kurbatova, S. A. Moiseev, and E. I. Shtyrkov
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Simulation of heat and mass transfer during growth of silicon carbide single crystals
B. A. Kirillov, A. S. Bakin, Yu. M. Tairov, and S. N. Solnyshkin
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Polarization photosensitivity of silicon solar cells with an antireflection coating consisting of a mixture of indium and tin oxides
V. M. Botnaryuk, A. V. Koval', A. V. Simashkevich, D. A. Sherban, V. Yu. Rud', and Yu. V. Rud'
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Photosensitivity of thin-film ZnO/CdS/Cu(In, Ga)Se2 solar cells
T. Walter, V. Yu. Rud', Yu. V. Rud', and H. W. Schock
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High-temperature annealing and nuclear-transmutation doping of GaAs bombarded by reactor neutrons
V. N. Brudnyi, V. A. Novikov, V. V. Peshev, N. G. Kolin, and A. I. Noifekh
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Characteristic structural features of amorphous hydrated silicon films deposited by direct-currect decomposition of silane in a magnetic field
O. A. Golikova, A. N. Kuznetsov, V. Kh. Kudoyarova, and M. M. Kazanin
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Effect of laser irradiation on the photoconductivity and noise in n-Cdx Hg1 ��� xTe single crystals
A. I. Vlasenko, V. A. Gnatyuk, E. P. Kopishinskaya, and P. E. Mozol'
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Photoelasticity and quadratic permittivity of wide-gap semiconductors
S. Yu. Davydov and S. K. Tikhonov
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Role of spatial localization of a particle during tunneling
N. L. Chuprikov
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Variation of the optical properties of porous silicon as a result of thermal annealing in vacuum
V. A. Kiselev, S. V. Polisadin, and A. V. Postnikov
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Electron-hole scattering in p-type silicon with a low charge-carrier injection level
T. T. Mnatsakanov, L. I. Pomortseva, and V. B. Shuman
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Effect of tin impurity on the photoconductivity kinetics of thin amorphous layers of arsenic selenide
M. S. Iovu, E. P. Kolomeiko, and S. D. Shutov
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Study of submicron deposits in polycrystalline materials using the internal-friction method
Yu. N. Andreev, N. P. Yaroslavtsev, M. V. Bestaev, D. Ts. Dimitrov, V. A. Moshnikov, and Yu. M. Tairov
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Mechanism of electroluminescence of porous silicon in electrolytes
D. N. Goryachev, O. M. Sreseli, and L. V. Belyakov
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Excitonic effects in the photoconductivity of quantum-well GaxIn1 ��� x As/InP structures
M. F. Panov and A. N. Pikhtin
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Lateral association of vertically coupled quantum dots
A. F. Tsatsul'nikov, A. Yu. Egorov, A. E. Zhukov, A. R. Kovsh, V. M. Ustinov, N. N. Ledentsov, M. V. Maksimov, B. V. Volovik, A. A. Suvorova, N. A. Bert, and P. S. Kop'ev
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Characteristic features of silicon multijunction solar cells with vertical p���n junctions
E. G. Guk, T. A. Nalet, M. Z. Shvarts, and V. B. Shuman
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1/f noise in strongly doped n-type GaAs under band���band illumination conditions
N. V. D'yakonova, M. E. Levinshtein, S. L. Rumyantsev, and F. Pascal
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Longitudinal photoeffect in In0.53Ga0.47As p���n junctions
S. V. Slobodchikov, Kh. M. Salikhov, and E. V. Russu
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Deep centers and negative temperature coefficient of the breakdown voltage of SiC p���n structures
A. A. Lebedev, S. Ortoland, C. Raynaud, M. L. Locatelli, D. Planson, and J. P. Chante
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Photoluminescence of erbium in amorphous hydrogenated phosphorus-doped silicon
E. I. Terukov, A. N. Kuznetsov, E. O. Parshin, G. Weiser, and H. Kuehne
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Photovoltaic effect in an asymmetric GaAs/AlGaAs nanostructure produced as a result of laser excitation
I. V. Kucherenko, L. K. Vodop'yanov, and V. I. Kadushkin
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A study of the excitonic characteristics in heterostructures with quantum wells and corrugated surface
I. A. Avrutskii and V. G. Litovchenko
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Faraday rotation of light in a microcavity
M. A. Kaliteevskii, A. V. Kavokin, and P. S. Kop'ev
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Effect of radiation on the characteristics of MIS structures containing rare-earth oxides
Ya. G. Fedorenko, L. A. Otavina, E. V. Ledeneva, and A. M. Sverdlova
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Calculation of a hierarchical PbS���C superlattice in a multiwell model
E. Ya. Glushko and V. N. Evteev
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Viktor Il'ich Fistul' (On his seventieth birthday)
Full Text: PDF (27 kB)
Electronic Phenomena in Chalcogenide Glassy Semiconductors Collective monograph edited by K. D. Ts�ndin, Nauka, St. Petersburg, 1986, 486 pages
Full Text: PDF (20 kB)dc.description.contributor[en_US]dc.description.contributor[en_US
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