1,721,298 research outputs found
Dataset for Random-Telegraph-Noise by Resonant Tunnelling at Low Temperatures
No full textThe excel file contains experimental data for the manuscript Fabrication of silicon slot waveguides with 10nm wide oxide slot. / Debnath, Kapil; Khokhar, Ali; Reed, Graham; Saito, Shinichi, 2017 IEEE 14th International Conference on Group IV Photonics (GFP). In particular:
Figure 3: Measured and normalized optical loss vs. waveguide length for slot waveguides with 10 nm wide slot.
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Localised tuneable composition single crystal silicon-germanium-on-insulator for low cost devices
No full textData for the paper Littlejohns, Callum, Dominguez Bucio, Thalia, Nedeljkovic, Milos, Mashanovich, Goran, Reed, Graham and Gardes, Frederic (2016) Localised tuneable composition single crystal silicon-germanium-on-insulator for low cost devices. Advances in Materials Science and Engineering</span
GaN/Si hybrid integrated photonic platform in UV-blue light region
No full textPhotonic integration platforms working in the UV-blue light wavelength range, with the advantages of a smaller footprint and a larger bandwidth compared with their infrared counterparts, hold the promise for the applications in augmented reality (AR)/virtual reality (VR) systems, light detection and ranging (Lidar), visible light communications, quantum photonic chips, bio-photonic chips, and so on. In order to fabricate such an integrated platform, both GaN based emitters and the passive Si photonic devices are required. In this emerging research area, there are few preliminary works in the emitters and low-loss waveguides in UV-blue wavelength range, [1,2] the established parameters for design a full UV-blue integrated platform is still missing. In this work, we proposed and fabricated a hybrid UV-blue photonic integrated platform which consists of a Distributed Bragg Reflector enhanced light emitting diode (DBR-LED) flip-chip bonded to Si photonic circuits. The latter is comprised of Al2O3 grating couplers and optical tapers with optimized parameters fabricated on Si to effectively couple the light from the DBR-LED (with improved emission directivity and brightness) to the waveguides, which deliver optical signals to the rest areas in the integrated photonic circuits. Regarding the active emitter, SiN/SiO2 DBRs were fabricated on a 450 nm blue LED with 10 pairs in the back side and 5 pairs in the front side. The DBR-LED exhibits a 10 times higher emission intensity in the vertical emission direction and a reduced linewidth from 26 to 17 nm. The major Fabry–Pérot peak is defined at 446 nm. For the passive photonics, we adopted atomic layer deposited (ALD) Al2O3 waveguide-based devices as it is demonstrated an ultra-low propagation loss of <3 dB/cm in the UV and <0.3 dB/cm in the blue region. The dimension of Al2O3 waveguide is 400 nm in width and 85nm in the thickness, supporting single mode with wavelengths from 250 to 490 nm, with a simulated propagation loss less than 1dB/cm. Vertical grating couplers with a period/duty cycle of 600 nm/0.27 were fabricated with an expected coupling efficiency of 6%. Following that it is a trapezoidal optical taper with width and length of 4 and 10 μm to generate a pure single mode in the waveguides. As the first demonstration in GaN/Si UV-blue integrated photonics with well-defined parameters in both active emitters and passive devices, we believe our work is instructive to the future work in GaN/Si photonic integrated systems. <br/
Dataset supporting the University of Southampton Doctoral Thesis "Passive and Active Tunability of the Silicon Nitride platform"
No full text Dataset supporting the University of Southampton Doctoral Thesis "Passive and active tunability of the silicon nitride platform"
This dataset contains: numerical data used to create the graphs present in the thesis, all in .csv format. The data includes simulation, material analysis, optical and electrical characterisation of devices.
The data is embargoed to 30/04/2025</span
N-over-N cascode push-pull modulator driver in 130nm CMOS enabling 20Gb/s optical interconnection with Mach-Zehnder modulator
No full textThe N over N cascode push-pull modulator driver is demonstrated at 20Gbit/s with IBM 130nm technology. Electro-optical measurement of modulator driver integrated with Mach-Zehnder modulator (MZM) is also presented. This modulator driver achieves 50 output impedance matching (for MZM) with on-chip termination. The power consumption of modulator driver is 312 mW and output swing is 3.4V pp on the differential
Raw data for manuscript "Fabrication of Arbitrarily Narrow Dielectric Slots in Silicon Waveguides"
No full textThe excel file contains experimental data for the manuscript “Fabrication of Arbitrarily Narrow Dielectric Slot in Silicon Waveguides”. In particular:
Figure 4: Measured and normalized optical loss vs. waveguide length for (a) slot waveguide with 10 nm wide slot and (b) rib waveguide. </span
Raw data for "Low-loss silicon slot waveguide realized by surface roughness reduction"
No full textThis dataset contains the raw data used for the figures in the paper Debnath K, Khokhar A, Reed G, Saito S. Low-loss silicon slot waveguide realized by surface roughness reduction. In 2016 IEEE 13th International Conference on Group IV photonics (GFP). Piscataway, US: IEEE. 2016. Available from DOI: 10.1109/GROUP4.2016.7739069
Abstract: We demonstrate low-loss slot waveguides on silicon-on-insulator (SOI) platform. Waveguides oriented to the <;11-2> direction on the Si (110) plane are fabricated by a combination of dry and wet etching to realize propagation loss of 4dB/cm for a waveguide with a slot width of 120nm.</span
Novel electro-absorption modulator with germanium fins evanescently coupled to silicon waveguide
No full textElectro-Absorption (EA) modulator is a promising candidate for the next generation devices in Si photonics with even lower power consumptions for short-reach optical interconnections. However, its relatively higher insertion loss must be addressed, and the efficient coupling from a Si waveguide to EA modulator is a challenging topic. Here, we propose, for the first time, to use novel Ge fin structures for EA modulators. An array of Ge fins evanescently coupled to a Si waveguide is used for the modulation by the Franz-Keldysh effect (FKE). We have designed this new EA modulator using Ge fins based on simulations
Analysis and implementation of an ultra-wide tuning range CMOS ring-VCO with inductor peaking
No full textA novel ring voltage controlled oscillator (VCO) topology is proposed which uses monolithic inductors as a peaking load. Four design examples have been fabricated and tested to verify the proposed circuit structure. The highest measured oscillation frequency is 25.07 GHz, with a tuning range of more than four octaves, and the active area is 0.0085 mm². The design has the highest combined frequency and tuning range with the best figure of merit (~ 195) comparable to previously published work
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