1,721,154 research outputs found
Towards 2-14 µm Silicon Photonics
No full textKeynote address.We are developing three integrated photonics platforms to cover the 2 - 14µm wavelength range. This paper offers a review of passive and active photonic devices in these three material platforms: germanium on silicon, suspended silicon and silicon on insulator (SOI)
Silicon based modulators and systems for short reach interconnect
No full textWe discuss silicon based modulators and systems for short reach interconnect. An infrastructure based on integrating photonic devices with CMOS circuits provides a cost effective and low power solution for these applications
Some of the remaining challenges for Silicon Photonics
No full textSilicon Photonics technology is unrecognisable from the state of the art only ten short years ago. The performance of silicon photonics technology has outstripped expectations, and led to a plethora of new applications areas. However, key work is still required. This paper discusses some of the remaining challenges, and some of the Southampton Group's proposed solutions
Simulation studies of a β-SiC on insulator Pockels phase modulator
No full textWe have designed waveguide modulators using β-SiC-on-insulator waveguides and the Pockels effect. A 2D semiconductor device simulator was used to determine the electric field configuration in a double-Schottky diode structure. This allowed us to evaluate the local modulation of the refractive index as a function of applied external bias and to determine the effective index modulation of the guided mode. The optical simulations were performed using the Spectral Index and the Effective Index methods. Different 2D geometries are analyzed and the material parameters needed for fabricating such a device are determined. Application to Mach-Zehnder intensity modulators is described. Such devices have potential for high-speed Si-based photonic devices compatible with silicon technology
Fabrication of a highly efficient optical modulator based on SOI
No full textSilicon-on-insulator (SOI) technology offers tremendous potential for the integration of optoelectronic functions on a silicon substrate. In this research, we report on the fabrication process of a Mach-Zehnder interferometer on an SOI with 0.5μm wide waveguides in a Si layer of the order of ~1μm thick. These small dimensions increase the speed of these devices. However, with these small dimensions several fabrication difficulties such as alignment and thickness accuracy are present
Laser interferometry to evaluate the performance of local displacement transducers
No full textThe authors have developed a Fabry-Pérot laser interferometer system for displacement measurement, which is compact and can be used as a stand-alone local strain measuring system. Interferometry operates on the principle of interference of a coherent light source and therefore provides an absolute standard of measurement. The purpose of this development is to investigate the extent of the linear-elastic range of geomaterials in triaxial stress space, and to obtain values of stiffness which can subsequently be compared with those obtained in other ways, both in the laboratory (using resonant column or bender elements) and in the field (using field geophysical techniques). The interferometer is also suitable as a high-accuracy instrument for calibration of other linear displacement transducers. This paper describes the instrument configuration and evaluates the performance of a commercial LVDT calibrated against the interferometer
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