1,720,988 research outputs found
Novel expressions for time domain responses of fractance device
No full textIn this research, many novel expressions for time domain responses of fractance device to various often cited inputs have been proposed. Unlike the previous ones, our expressions have been derived based on the Caputo fractional derivative by also concerning the dimensional consistency with the integer order device based responses and the different between two types of fractance device i.e. fractional order inductor and fractional order capacitor. These previous expressions have been derived based on the Riemann-Liouvielle fractional derivative which has certain features that leads to contradictions and additional modeling difficulties unlike the Caputo fractional derivative. Our new expressions are applicable to both fractional order inductor and capacitor with arbitrary order. They are also applicable to any subject which its electrical characteristic can be modeled based on the fractance device. With our expressions and numerical simulations, the time domain behavioral analysis of both fractance device and such subject can be directly performed without requiring any time to frequency domain conversion and its inverse as already presented in this work. Therefore our work has been found to be beneficial to various fractance device related disciplines e.g. biomedical engineering, control system, electronic circuit and electrical engineering etc
Analysis and Comprehensive Analytical Modeling of Statistical Variations in Subthreshold MOSFET's High Frequency Characteristics
Get PDFIn this research, the analysis of statistical variations in subthreshold MOSFET's high frequency characteristics defined in terms of gate capacitance and transition frequency, have been shown and the resulting comprehensive analytical models of such variations in terms of their variances have been proposed. Major imperfection in the physical level properties including random dopant fluctuation and effects of variations in MOSFET's manufacturing process, have been taken into account in the proposed analysis and modeling. The up to dated comprehensive analytical model of statistical variation in MOSFET's parameter has been used as the basis of analysis and modeling. The resulting models have been found to be both analytic and comprehensive as they are the precise mathematical expressions in terms of physical level variables of MOSFET. Furthermore, they have been verified at the nanometer level by using 65~nm level BSIM4 based benchmarks and have been found to be very accurate with smaller than 5 % average percentages of errors. Hence, the performed analysis gives the resulting models which have been found to be the potential mathematical tool for the statistical and variability aware analysis and design of subthreshold MOSFET based VHF circuits, systems and applications
The modified alpha power law based model of statistical fluctuation in nanometer FGMOSFET
No full textThe modified alpha power law based model of statistical fluctuation in nanometer FGMOSFET
No full textThe modified alpha power law based model of statistical fluctuation in drain current of an unconventional Metal Oxide Semiconductor Field Effect Transistor namely Floating-Gate Metal Oxide Semiconductor Field Effect Transistor (FGMOSFET) has been proposed where the nanometer FGMOSET have been focused. Unlike the previous works, the fluctuation in drain current has been expressed in a per-unit basis which is able to show the true criticality of such fluctuation, and those previously assumed approximations on FGMOSFET’s parameters have not been adopted. The process induced device level statistical fluctuations and the related correlations have been taken into account. Nonlinearity of voltage at the floating gate and dependency on voltage at the drain terminal of the coupling factors have also been concerned. The proposed model can accurately fit the 65 nm 4th generation Berkeley Short-channel IGFET Model (BSIM4) based reference obtained from the Monte-Carlo simulation by using FGMOSFET Simulation Program with Integrated Circuit Emphasis based simulation technique. If desired, it can fit those references based on smaller technologies by using the optimally extracted drain current parameters of those technologies. From our model, the statistical fluctuation reducing strategies of nanometer FGMOSFET can be obtained. Moreover, the application of the model to the candidate nanometer FGMOSFET based circuit has also been shown
On the fractional domain generalization of memristive parametric oscillators
No full textIn this research, we generalize a family of electronic parametric oscillators in the fractional domain by using a state of the art circuit element namely fractional memristor. Such family of parametric oscillators is the memristor based Wien family which is an extension of the normal Wien family. Noted that such normal Wien family is one family of the simplest second-order nonparametric oscillators. We derive the equations of the range of oscillating frequency, sustained oscillating frequency, sustained oscillating condition and the output voltage by using our mathematical model of the fractional memristor as the basis. With the obtained results and numerical simulations, the effects of the fractional memristor to the generalized parametric oscillators have been studied where the validation has been performed based on the SPICE HP memristor model. We have found that those oscillators with the fractional memristor of order greater than unity are more preferable
Analytical Model of Random Variation in Drain Current of FGMOSFET
Get PDFThe analytical model of random variation in drain current of the Floating Gate MOSFET (FGMOSFET) has been proposed in this research. The model is composed of two parts for triode and saturation region of operation where the process induced device level random variations of each region and their statistical correlations have been taken into account. The nonlinearity of floating gate voltage and dependency on drain voltage of the coupling factors of FGMOSFET have also been considered. The model has been found to be very accurate since it can accurately fit the SPICE BSIM3v3 based reference obtained by using Monte-Carlo SPICE simulation and FGMOSFET simulation technique with SPICE. It can fit the BSIM4 based reference if desired by using the optimally extracted parameters. By using the proposed model, the variability analysis of FGMOSFET and the analytical modeling of the variation in the circuit level parameter of any FGMOSFET based circuit can be performed. So, this model has been found to be an efficient tool for the variability aware analysis and design of FGMOSFET based circuit
Gaussian Mixture Density based Analytical Model of Noise Induced Variation in Key Parameter of Electronically Tunable Device
No full textIn this research, the Gaussian mixture density based analytical model of variation in key parameter of electronically tunable device has been originally proposed. The proposed model is applicable to any electronically tunable device with its tuning variable has been affected by any kind of noise with arbitrary parameters. It has been found from the verification by using different electronically tunable device based empirical distributions and the Kolmogorov-Smirnov tests that this novel model is very accurate. So, it has been found to be a convenient mathematical tool for the analysis and design of various electronically tunable device based circuits
Comprehensive Analytical Models of Random Variations in Subthreshold MOSFET’s High-Frequency Performances
No full textThe Novel Analytical Probabilistic Model of Random Variation in the MOSFET’s High Frequency Performance
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