1,721,011 research outputs found
Corpus Papyrorum Raineri. V. Griechische Text. II, herausgegeben von John R. Rea und Pieter J. Sijpesteijn
No full textDarrouzès Jean. Corpus Papyrorum Raineri. V. Griechische Text. II, herausgegeben von John R. Rea und Pieter J. Sijpesteijn. In: Revue des études byzantines, tome 35, 1977. p. 296
Corpus Papyrorum Raineri. V. Griechische Text. II, herausgegeben von John R. Rea und Pieter J. Sijpesteijn
No full textDarrouzès Jean. Corpus Papyrorum Raineri. V. Griechische Text. II, herausgegeben von John R. Rea und Pieter J. Sijpesteijn. In: Revue des études byzantines, tome 35, 1977. p. 296
Comparison between chemical and electrical profiles in Al/sup +/ or N/sup +/ implanted and annealed 6H-SiC
No full textOsservazioni sulla presenza di Aedes Albopictus in Liguria. Parassitologia 35,31-2,1993.
No full textEffect of metallic copper on the larva of Aedes albopictus: 1st laboratory data
No full textLaboratory experiments were carried out to test the larvicidal properties of metallic copper against Ae albopictus, a species which has spread in Italy during the last 3 years. The results show the strongest lethal effect on 1st stage larvae and support the use of copper as a simple, cheap and environmentally safe agent to control larval breeding of Ae albopictus in peridomestic containers
Reorientable dipolar Cu-Ca antisite and anomalous screening in CaCu3Ti4O12
No full textBased on first-principles calculations, we show that the abundant Cu-Ca antisite defect contributes sizably to dielectric screening in single-crystal CaCu3Ti4O12. Cu-Ca has a multi-minimum off-center equilibrium configuration, whereby it possesses a large and easily reorientable dipole moment. The low-temperature and frequency cut-off behavior of Cu-Ca-induced response is consistent with experiment
Electrical activity of dislocations in Si decorated by Ni
No full textIn this paper we present results of DLTS measurements in dislocations decorated by Ni in n-FZ-Si., which is an ubiquitous impurity in silicon technology. Our experiments show that Ni segregation or precipitation at dislocations results in asymmetrically broadened DLTS-line, corresponding to deep localized acceptor states in an energy range Ec-(0.3-0.48)eV. We have also observed some unusual phenomena in DLTS, indicating possible diffusion of Ni along dislocations in a strong electric field and, probably, the electronic transport along decorated dislocations
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