1,720,979 research outputs found
Semiconductor spintronics: The full matrix approach
A new model, based on an asymptotic procedure for solving the spinor kinetic equations of electrons and phonons is proposed, which gives naturally the displaced Fermi-Dirac distribution function at the leading order. The balance equations for the electron number, energy density and momentum, plus the Poisson's equation, constitute now a system of six equations. Moreover, two equations for the evolution of the spin densities are added, which account for a general dispersion relation
Bipolar spintronics with generation-recombination of electrons and holes: Macroscopic equations
A new model based on an asymptotic procedure for solving the spinor kinetic equations of carriers and phonons is proposed, which gives naturally the displaced Maxwellian at the leading order. The balance equations for the carrier numbers, total energy density and total momentum for the whole system constitute now a system of four equations for the carrier chemical potentials, the temperature of the system and the drift velocity. In the drift-diffusion approximation, the constitutive laws are derived and the Onsager relations recovered. Moreover, equations for the evolution of the spin densities are added, which account for a general dispersion relation. The treatment of spin-flip processes, derived from first principles, is new and leads to an explicit expression of the relaxation time tau(sf) as a function of the temperatur
Spintronics of a bipolar semiconductor with Fermi-Dirac statistics
A new model, based on an asymptotic procedure for solving the spinor kinetic equations of carriers and phonons is proposed, which gives naturally the displaced Fermi-Dirac distribution function at the leading order. The balance equations for the carrier number, energy densities, and momentum, constitute now a system of eight equations for the carrier chemical potentials, the temperatures and the drift velocities. Moreover two equations for the evolution of the spin densities are added, which account for a general dispersion relation. The treatment of spin-flip processes, derived from first principles, is new and leads to an explicit expression of the relaxation times as functions of the temperatures. The novelty here is twofold. The presence of holes is accounted for. Moreover carriers are correctly described by means of the Fermi Dirac statistics. (C) 2014 Elsevier B.V. All rights reserved
Generalized balance equations for anelectron-phonon system
A new model, based on an asymptotic procedure for solving the generalized kinetic equations of electrons and phonons, is proposed, which gives naturally the displaced Maxwellian at the leading order. The balance equations for the electron number, total energy density and total momentum for the whole system constitute now, together with Poisson equation, a system of four equations for the electron chemical potential, the temperature of the system, the drift velocity and the electric potential. In the drift-diffusion approximation the constitutive laws are derived and the Onsager relations recovered
EXCITON-CATALYZED RECOMBINATION-GENERATION OF ELECTRONS AND HOLES IN SEMICONDUCTORS: A KINETIC APPROACH
A new derivation of the drift-diffusion equations for electrons and phonons
The balance equations for the electron number and the total energy density for the whole A new model based on an asymptotic procedure for solving the generalized kinetic equations of electrons and phonons is proposed The linearized equations turn out to be system constitute now together with the Poisson equation a system of three equations for the electron chemical potential the temperature of the system and the electric potential solvable and lead naturally to the displaced Maxwellian approximation The constitutive laws for the electric and thermal currents are derived and the Onsager relations are verified (C) 2010 Elsevier B V All rights reserve
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