1,721,035 research outputs found
Characterization of strip detector parameters for the SuperB Silicon Vertex Tracker
No full textThe Silicon Vertex Tracker for the SuperB detector is designed as an evolution of the BaBar SVT, based on double-sided strip detectors. The wider acceptance in polar angle (down to 300 milliradians) will imply larger incidence angles (up to 73°) on the sensors. On the z-side (reading out the z coordinate, along the beam direction) this results in large clusters with small signal values on individual channels. For optimum performance it would be desirable to continuously vary the sensor pitch on z-side versus position. An easy and convenient way to approximate this configuration is to bond two or three adjacent strips to a single trace of the fanout circuit that connects the strips to the front-end electronics (the so-called ‘pairing’ option). In order to accurately measure the total capacitance of strips in various pairing configurations (×2,×3,×4) two test detectors have been assembled on PCBs, and various strip connection schemes have been implemented by wire bonding, on p and on n-side, respectively. Capacitance and dissipation factor have been measured versus bias voltage and frequency. These data are being used to estimate the noise contribution of the detector and to choose the best z-side connection scheme in the SVT
Measurement of Johnson noise induced by p-stops in silicon microstrip detectors
No full textWe report on noise measurements performed on the
n-side of double-sided, AC-coupled, punch-through biased silicon
strip detectors. The noise has been measured over a wide range of
peaking times and bias voltages, allowing the disentanglement of
two excess noise terms, one related to the p-stops surrounding the
strips and the other related to the electron accumulation layer at
the Si/SiO interface
SuperB Technical Design Report
No full textIn this Technical Design Report (TDR) we describe the SuperB detector that was to be installed on the SuperB e+e- high luminosity collider. The SuperB asymmetric collider, which was to be constructed on the Tor Vergata campus near the INFN Frascati National Laboratory, was designed to operate both at the Upsilon(4S) center-of-mass energy with a luminosity of 10^{36} cm^{-2}s^{-1} and at the tau/charm production threshold with a luminosity of 10^{35} cm^{-2}s^{-1}. This high luminosity, producing a data sample about a factor 100 larger than present B Factories, would allow investigation of new physics effects in rare decays, CP Violation and Lepton Flavour Violation. This document details the detector design presented in the Conceptual Design Report (CDR) in 2007. The R&D and engineering studies performed to arrive at the full detector design are described, and an updated cost estimate is presented. A combination of a more realistic cost estimates and the unavailability of funds due of the global economic climate led to a formal cancelation of the project on Nov 27, 2012
Study of frequency-dependent strip admittance in silicon microstrip detectors
No full textWe report on detailed interstrip admittance measurements performed on double-sided, AC-coupled and punch-through biased silicon microstrip detectors. The sensors chosen have been fabricated on very high resistivity substrates, which translates in very low depletion voltages, in the range 10–20 V. This, together with the absence of bias resistors, allows a careful study of the strip admittance components over a wide range of bias voltages and frequencies. In some instances, beyond total depletion the measured interstrip capacitance and dissipation factor exhibit a marked voltage and frequency dependence, linked to the presence of some resistive component. A simple lumped electrical model has been developed to explain the observed features and 3-D numerical simulations have been performed, supporting the interpretation of the phenomena. These features of the admittance have been found to be closely correlated with a non-standard noise term, exhibiting a peculiar frequency/time dependence, which adds in quadrature to the well known parallel and series noise sources
Beam-test results of 4k pixel CMOS MAPS and high resistivity striplet detectors equipped with digital sparsified readout in the Slim5 low mass silicon demonstrator
No full textThe SuperB Silicon Vertex Tracker
No full textSuperB is an asymmetric electron-positron collider planned to operate at very high luminosity ( 1036cm−2s−1) around the Υ(4S) peak and in an energy range from the τ/charm threshold to the Υ(5S). It is an evolution of the SLAC PEP-II collider and its detector, BaBar. This paper describes the Silicon Vertex Tracker (SVT), one of the key elements of the SuperB detector, concentrating on the modifications and improvements adopted on the strip sensors for the external layers and on the baseline option for the innermost layer (Layer0), a thin (200 μm) double-sided silicon detector with short strips ("Striplets"), oriented at 45◦ angle to the detector's edge
Noise Characterization of Double-Sided Silicon Microstrip Detectors With Punch-Through Biasing
No full textWe report on extensive noise measurements performed on double-sided, AC-coupled, punch-through biased silicon strip detectors. We used a single-channel acquisition chain, reading one strip per side, all other strips being kept grounded. The noise has been measured over a wide range of peaking times and leakage currents, allowing a careful determination of the various noise contributions. We determined the noise contribution of the punch-through mechanism and we observed, on different sensors, two unexpected noise terms, one related to the punch-through current and the other to the presence of resistive layers at the Si/SiO2 interface
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