2 research outputs found
THE TROUBLED ORPHAN: PROTECTION OF THE PROPERTY INHERITANCE RIGHTS OF ORPHANS THROUGH AFFIRMATIVE ACTION IN BOTSWANA’S 2019 LAND POLICY
No full textThe proposed article examines proposals that affirmative action be the route through which inheritance rights of orphans would be effectively protected. These proposals were initially set out in Botswana’s 2015 Land Policy but were carried forward to the 2019 Revised Land Policy. While these proposals were designed to protect the property and inheritance rights of widows and orphans, the focus of this article will be on the protection of orphan inheritance rights. This article builds on concerns highlighted by Ng’ongóla in his article ‘Reflections on Botswana’s 2015 Land Policy’ over the degree to which the 2015 Land Policy addressed problems in Botswana land tenure. While this article will examine the mooted affirmative action proposals which seek to protect the inheritance rights of orphans, it will restrict itself to the proposals contained in the 2019 Revised Land Policy. The premise of this article is that the proposed affirmative action(s) which identify the land and property rights of orphans as deserving of protection may not, on their own, actually do so. A central theme of this article is that affirmative action proposals must take into account ‘the best interests of the child’ laid out in the Children’s Act of 2009. There is however, a tension between the ‘the best interests of the child’ principle and the ‘ring-fencing’ of customary law in personal law in section 15(3) and (4) of the Constitution. There a nuanced intersection between customary law, constitutional protection of customary inheritance rights, patriarchy on one hand and legislation protecting children’s rights, human dignity as well Botho values that are inherent to Botswana on the other hand. Due however to these nuances, this article will be the first of a two-part series interrogating through a legal lens, the affirmative action proposals in the 2019 Revised Land Policy
Enhancement of electrochemical performance of monolayer SnS2 for Li/Na-ion batteries through a sulphur vacancy : a DFT study
No full textDATA AVAILABILITY : The datasets generated during and/or analysed during
the current study are available from the corresponding author on
reasonable request.Various transition metal dichalcogenides materials have been investigated from bulk to monolayer phases for different
advanced technological applications. Tin disulfide monolayer offers advantages as an anode material for Li/Na-ion batteries,
although it cannot be considered ideal for direct exploitation. We systematically performed a comparative study of the
adsorption and diffusion behaviour of Li/Na on a pristine SnS2 monolayer and on a SnS2 monolayer with S-vacancy for
enhancement of electrochemical performance, using density functional theory approach. Although all the adsorption sites
are exothermic, it was established that Li/Na adatoms mostly prefer to bind strongly on SnS2 monolayer with S-vacancy but
avoiding the S-vacancy site. It was established that avoiding the S-vacancy site along the path, excellent diffusion barriers of
0.19 eV for Li and 0.13 eV for Na were achieved, suggesting possible ultrafast charge/discharge rate. Due to reduced molar
mass, the SnS2 monolayer with S-vacancy has a slightly higher storage capacity than its pristine counterparts for both Li
and Na adatoms. The obtained open circuit voltage values are within the range of 0.25–3.00 V assuring that the formation
of dendrites can surely be averted for the envisaged battery operation. Understanding the effects of an S-vacancy on the
electrochemical properties of Li/Na on the SnS2 monolayer allows us to consider possible improvements to energy storage
devices that can be applied as a result of improved anode material.The University of Pretoria and the National Institute for Theoretical and Computational Sciences (NITheCS). Open access funding provided by University of Pretoria.https://link.springer.com/journal/10008am2024PhysicsSDG-09: Industry, innovation and infrastructur
