64 research outputs found
n+-SnO2/a-SiC:H/Metal Thin Film Photodiodes with Voltage-Controlled Spectral Sensitivity
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Light-modulated Carrier Injection across the Interface between Transparent Conducting Oxide and Semi-insulating Amorphous Silicon Carbide
No full textStructure of a nucleotide pyrophosphatase/phosphodiesterase (NPP) from Euphorbia characias latex characterized by small-angle X-ray scattering: Clues for the general organization of plant NPPs
No full textLittle information is available concerning the structural features of nucleotide pyrophosphatase/phosphodiesterases (NPPs) of plant origin and the crystal structures of these proteins have not yet been reported. The aim of this study was to obtain insight into these aspects by carrying out a comparative analysis of the sequences of two different fragments of an NPP from the latex of the Mediterranean shrub Euphorbia characias (ELNPP) and by studying the low-resolution structure of the purified protein in solution by means of small-angle X-ray scattering. This is the first structure of a plant NPP in solution that has been reported to date. It is shown that the ELNPP sequence is highly conserved in many other plant species. Of note, the catalytic domains of these plant NPPs have the same highly conserved PDE-domain organization as mammalian NPPs. Moreover, ELNPP is a dimer in solution and this oligomerization state is likely to be common to other plant enzymes
On the electrical properties of polycrystalline diamond films on silicon
No full textThe electrical behaviour of metal/diamond/silicon structures was investigated by current-voltage measurements as a function of temperature in the range 20-270 °C. The results were related to the morphology and composition of the diamond film by a nonlinear electrical model, taking into account both a temperature-independent conductance through highly defective regions and a temperature-dependent field-activated conductance through bulk diamond grains. © 1995
STRUCTURAL, OPTICAL AND ELECTRONIC-PROPERTIES OF WIDE-BAND GAP AMORPHOUS-CARBON SILICON ALLOYS
No full textHydrogenated carbon-silicon alloys with carbon fraction X(C) between 0.2 and 0.8 have been deposited and characterized. For X(C) less-than-or-equal-to 0.5 it is shown that Si/SiC phases whose electronic properties can be optimized by using an H-2 dilution higher than 90% and a substrate temperature T(d) almost-equal-to 300-degrees-C are preferentially deposited. For X(C) > 0.5 the deposited material contains polymer-like phases which are responsible for high optical transparency and poor electronic properties
On the Electrical Properties of Polycrystalline Diamond on Silicon
No full textThe electrical behaviour of metal/diamond/silicon structures was investigated by current-voltage measurements as a function of temperature in the range 20-270 degrees C. The results were related to the morphology and composition of the diamond film by a nonlinear electrical model, taking into account both a temperature-independent conductance through highly defective regions and a temperature-dependent field-activated conductance through bulk diamond grains
Structural, optical and electronic properties of wide band gap amorphous carbon-silicon alloys
No full textHydrogenated carbon-silicon alloys with carbon fraction X(C) between 0.2 and 0.8 have been deposited and characterized. For X(C) less-than-or-equal-to 0.5 it is shown that Si/SiC phases whose electronic properties can be optimized by using an H-2 dilution higher than 90% and a substrate temperature T(d) almost-equal-to 300-degrees-C are preferentially deposited. For X(C) > 0.5 the deposited material contains polymer-like phases which are responsible for high optical transparency and poor electronic properties
Structural, optical and electronic properties of wide band-gap amorphus carbon-silicon alloys
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