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Characterization by Auger spectroscopy of niobium-aluminum oxide-niobium sandwiches for Josephson junction
Magnetic field dependence of the critical current of single and stacked Josephson junctions with large idle regions
Niobium Josephson junction bolometers for optical detection in the visible-infrared region
The response of Nb Josephson junctions fabricated on different substrates, silicon and amorphous glass, is measured under optical illumination at several conditions of light intensity and light chopping frequency. The linearity of the response on the optical power extends over five orders of magnitude. The signal of the junction on silicon is 2 orders of magnitude lower than that of the junction on amorphous glass, but at least one order of magnitude faster, as the time constant of a directly irradiated junction on silicon is lower than 10 mu s. The signal dependence on chopping frequency of the junction on amorphous glass is typical of a strong thermal coupling between film and substrate, while for the junction on silicon it depends mainly on the thermal boundary resistance between film and substrate
Rf properties of Overdamped Sis junctions
A new tape of nonhysteretic Josephson junction suitable for applications in voltage metrology has been developed. These junctions derive from the Nb/Al - AlOx/Nb SIS junctions using a relatively thick Al layer oxidized at a low value of oxygen exposure. This produces junctions with reproducible and spatially homogeneous I-V characteristics, having current densities ranging from 10(3) to more than 2 x 10(4) A/cm(2) and characteristic voltages up to 0.40 mV. The authors report here the rf response of these junctions at 70 GHz. The authors have measured the dependence of the rf-induced steps on the microwave power and the stability of the steps, in view of a future application of these junctions to an ac Josephson voltage standard
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