144 research outputs found
Rewriting the Continental Reformation for the Italian Public. The "Commentary on the Epistle to the Romans" by Antonio Brucioli
No full textThis article proposes a study of the Commento nelle celesti e divine epistole di San Paulo by Antonio Brucioli, humanist, regular of the Orti Oricellari, translator of Aristotle, Cicero, as well as of the Bible, writer of philosophical, moral, political and religious dialogues, owner of a press in Venice, and later tried for heresy. First, the analysis will focus on selected passages of Brucioli’s commentary of Paul’s epistles to the Romans, so as to highlight the sources used by the author. The practice, broadly used by Brucioli, of paraphrasing or merely copying texts of the Northern Reformers, was already pointed out in his own time by Ambrogio Catarino Politi as well as by historians. This article proposes a study of the motivations behind Brucioli’s choices of sources and his relationship with other contemporary commentaries on Paul’s epistles. Particular attention is given on the reliance – not yet pointed out by the historians – of Brucioli’s Commento on Johann Oecolampadius, the
reformer of Basel. Lastly, the article emphasizes the importance for the whole Italian Reformation of the borrowing and copying of text from the European Reformers as a silent medium in the spreading of texts and ideas
"Adversarii perpetuo clamant: patres, patres, patres". Serve ancora tradurre i Padri? Wolfgang Musculus traduttore dell’or. 2 di Gregorio di Nazianzo.
No full textL'articolo indaga la traduzione dell'orazione II di Gregorio di Nazianzo opera di Wolfgang Musculus, dotto protestante, all'interno degli Opera omnia greci e latini del Padre pubblicati a Basilea nel 1550. La traduzione di Musculus permette di capire come la lezione dei Padri da un lato fosse sentita compatibile con le istanze morali del traduttore, e dall'altro come fosse uno strumento polemico nella guerra confessionale.Gregory of Nazianzus’ fortune in the West is the object of a series of recent studies that are trying to investigate the ways, the
intents and the environments in which the author was read and translated. The aim of this contribution is to examine the
Latin translation of Gregory of Nazianzus’ oration 2, made by the Protestant scholar Wolfgang Musculus for the Opera
Omnia published in 1550 in Basel. This translation is a useful device for understanding, on the one hand, the polemical
intent of the translator, convinced that is necessary to win over the Catholic adversaries on the ground of the Fathers, and on
the other, the humanistic effort of the translator, capable of a good, but not brilliant, rendition of a rhetorical and complex
text. Oration 2 is one of the few of Gregory’s orations translated by Musculus: probably the theme, the figure of the good
priest, and the evaluation of the situation of the Church, seemed similar to and consonant with Musculus’ vision. Is it still
useful to translate the Fathers for a Protestant scholar? The answer seems to be yes, according to this translation: the high
moral standards proposed by Gregory in an elevated manner, the struggle for truth necessary for a good Christian, the pure
doctrine, compatible with Protestant war cries, were all appealing characteristics that deserved the effort of a translation
Structural and electrical analysis of In–Sb–Te‐based PCM cells
No full textTwo In–Sb–Te compounds with low Te content (12 at.% and 17 at.%), deposited by metalorganic chemical vapour deposition, were implemented into prototype phase-change memory devices of size 50 × 50 nm2 and 93 × 93 nm2. These chalcogenides yielded devices with higher threshold voltage than those based on Ge–Sb–Te alloys. The endurance and programming window were markedly improved (from 103 to 106 cycles and from 1 to 2 orders of magnitude, respectively) when employing the Te-richer alloy. Moreover, in situ structural and electrical analysis on TiN/In–Sb–Te/dielectric stacks provided additional insight on the thermal stability of the two ternary phases In3SbTe2 and InSb0.8Te0.2, which were found to coexist in these compounds
Growth study and characterization of In-Sb-Te compounds deposited onto different substrates by metal-organic chemical vapour deposition
No full textA systematic study of the deposition parameters for the metal–organic chemical vapour deposition growth of In–
Sb–Te (IST), of interest for phase change memory applications, was performed. Samples were grown on Si/SiO2
and patterned substrates in the (220÷350)°C temperature range and working pressure from 35 to 100×102 Pa,
which resulted in the formation of thin films (down to 30 nm) or IST crystals. The chemical composition of the
IST films was mainly dependent on the deposition temperature. We have demonstrated the possibility to obtain
a conformal and smooth morphology with improved surface roughness for films grown at 260 °C when the
substrate surface is treated with the TrisDimethylaMinoAntimony ([N(CH3)2]3Sb) precursor. The IST-based
chalcogenide films exhibited different crystalline and partially amorphous phases, which may be favourable
for multilevel data storage. The IST growth mechanism was analysed in terms of the structural, compositional
and electrical properties
Thermal conductivity measurement of a Sb2Te3 phase change nanowire
No full textThe c-axis thermal conductivity of a Sb2Te3 nanowire is measured using the scanning thermal microscopy technique within the 3ω mode. The contact parameters, in terms of boundary contact resistance and contact area radius, are measured in specific configurations, and the values found are assumed not to vary within the nanowire case. The method does not require handling or suspending the nanowire. The measured thermal conductivity at room temperature is found to be in a good agreement with that of the bulk, since the nanowire characteristic dimension in the diffusion direction is larger than the phonon mean free path
Radiation hardness of silicon Photomultipliers under 60Co γ-ray irradiation
No full textRadiation damage in silicon photomultipliers (SiPM) caused by exposure to 60Co γ-rays is experimentally evaluated and discussed. SiPM devices were irradiated to doses up to 9.4 kGy. Dark current, dark count rate, gain, single photon counting capability, and cross-talk probability among SiPM pixels are evaluated as a function of irradiation dose.Fil: Pagano, R.. Istituto per la Microelettronica e Microsistemi. Catania; ItaliaFil: Lombardo, S.. Istituto per la Microelettronica e Microsistemi. Catania; ItaliaFil: Palumbo, Félix Roberto Mario. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Technion - Israel Institute of Technology; IsraelFil: Sanfilippo, D.. STMicroelectronics. Catania; ItaliaFil: Valvo, G.. STMicroelectronics. Catania; ItaliaFil: Fallica, G.. STMicroelectronics. Catania; ItaliaFil: Libertino, S.. Istituto per la Microelettronica e Microsistemi. Catania; Itali
Electronic properties of crystalline Ge1-xSbxTey thin films
No full textGe1-xSbxTey thin films, grown by metalorganic and hot-wire liquid injection chemical vapor
deposition in different crystalline phases, are investigated to determine resistivity, carrier density, and
carrier mobility in the 4.2–300 K temperature range. It is found that all these chalcogenides exhibit
p-type conduction, high carrier density (>2 1020 cm 3
), and no carrier freeze-out, regardless of
composition. Low-temperature mobility data show that both chemical composition and growth
technique affect the defect density and, in turn, the carrier scattering mechanisms. In this regard,
charge carrier mobility is analyzed according to semi-empirical scattering models and an interpretation
is provided
Effect of nitrogen doping on the thermal conductivity of GeTe thin films
No full textThe 3ω method was employed to determine the effect of nitrogen doping (5 at.%) on the thermal conductivity of sputtered thin films of stoichiometric GeTe (a material of interest for phase change memories). It was found that nitrogen doping has a detrimental effect on the thermal conductivity of GeTe in both phases, but less markedly in the amorphous (–25%) than in the crystalline one (–40%). On the opposite, no effect could be detected on the measured thermal boundary resistance between these films and SiO2, within the experimental error. Our results agree with those obtained by molecular dynamic simulation of amorphous GeTe
Incidence and short-term prognosis of status epilepticus in the health district of Ferrara, Italy, in 2003
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