37 research outputs found
Polly H. Carder Collection on George F. Root
George Frederick Root (1820-1895) was an American songwriter and music educator. He is perhaps best known for his song "The Battle Cry of Freedom," which was written and rose to popularity during the U.S. Civil War. The Polly H. Carder Collection on George F. Root contains original published scores and songbooks from the period 1852-1907 and photocopied scores collected by Polly H. Carder, author of the book George F. Root, Civil War Songwriter: A Biography. The collection also contains a short article, "The Last Days of George F. Root," written by Root's daughter, Clara Louise Burnham
George F. Root, Civil War songwriter a biography
"When the Civil War broke out in 1861, "The Battle Cry of Freedom" became perhaps the most common patriotic song echoing throughout the North. The author of that famous tune was George F. Root, and his many other patriotic songs established him as "the musician of the people.""--Provided by publisher
Antitrust Implications Arising from the Use of Overyly Broad Restrictive Covenants for the Protection of Trade Secrets
Many employers require employees to agree to contractual provisions restricting postemployment disclosure of trade secret information. These contracts, however, are often drafted so as to include information not properly within the scope of trade secret protection. The author examines this problem and, \u27after concluding that current judicial treatment is inadequate to protect the interests of employees and the public, suggests an antitrust remedy
Antitrust Implications Arising from the Use of Overyly Broad Restrictive Covenants for the Protection of Trade Secrets
Many employers require employees to agree to contractual provisions restricting postemployment disclosure of trade secret information. These contracts, however, are often drafted so as to include information not properly within the scope of trade secret protection. The author examines this problem and, \u27after concluding that current judicial treatment is inadequate to protect the interests of employees and the public, suggests an antitrust remedy
Stimulated terahertz emission due to electronic Raman scattering in silicon
Silicon-based semiconductors are intensively investigated over the past years as promising candidates for optoelectronic devices at terahertz (THz) frequencies [1]. Optically pumped intracenter silicon lasers, realized in the past decade in the THz range, are based on direct optical transitions between shallow levels of different shallow donors [2]. Recently, terahertz Raman laser emission has been demonstrated in silicon doped by antimony [3] and phosphorus [4].
We report on realization of terahertz lasers based on intracenter electronic Raman scattering in silicon doped by arsenic (Si:As, frequency range 4.8 – 5.1 THz and 5.9 – 6.5 THz) and silicon doped by bismuth (Si:Bi, 4.6 – 5.9 THz) under optical excitation by infrared frequency-tunable free electron laser at low lattice temperatures. The Stokes shift of the observed laser emission is equal to the Raman-active donor electronic transition between the ground 1s(A1) and the excited 1s(E) donor states. Raman terahertz gain of the lasers is similar to those observed for the donor-type terahertz silicon donor lasers
Housing with services: year 1 evaluation, October 2014
Title from PDF cover (viewed on December 22, 2016).This archived document is maintained by the Oregon State Library as part of the Oregon Documents Depository Program. It is for informational purposes and may not be suitable for legal purposes.Includes bibliographical references (page 39).This project was supported by Funding Opportunity Number CMS-1G1-12-001 from the US Department of Health and Human Services, Center for Medicare & Medicaid Innovation.Mode of access: Internet from the Oregon Government Publications Collection.Text in English
