1,721,047 research outputs found
Dataset for “Four wave mixing in 3C SiC ring resonators”
No full textDataset supports:
Politi, A., & Martini, F. (2018). Four wave mixing in 3C SiC Ring Resonators. Applied Physics Letters.</span
Linear Integrated Optics in 3C Silicon Carbide
No full textDataset for the paper Linear Integrated Optics in 3C Silicon Carbide</span
Cavity-enhanced measurements of defect spins in silicon carbide
No full textThe identification of new solid-state defect-qubit candidates in widely used semiconductors has the potential to enable the use of nanofabricated devices for enhanced qubit measurement and control operations. In particular, the recent discovery of optically active spin states in silicon carbide thin films offers a scalable route for incorporating defect qubits into on-chip photonic devices. Here, we demonstrate the use of 3C silicon carbide photonic crystal cavities for enhanced excitation of color-center defect spin ensembles in order to increase measured photoluminescence signal count rates, optically detected magnetic-resonance signal intensities, and optical spin initialization rates. We observe an up to a factor of 30 increase in the photoluminescence and optically detected magnetic-resonance signals from Ky5 color centers excited by cavity-resonant excitation and increase the rate of ground-state spin initialization by approximately a factor of 2. Furthermore, we show that the 705-fold reduction in excitation mode volume and enhanced excitation and collection efficiencies provided by the structures can be used to overcome inhomogenous broadening in order to facilitate the study of defect-qubit subensemble properties. These results highlight some of the benefits that nanofabricated devices offer for engineering the local photonic environment of color-center defect qubits to enable applications in quantum information and sensin
Silicon carbide photonic crystal cavities with integrated color centers
No full texthe recent discovery of color centers with optically addressable spin states in 3C silicon carbide (SiC) similar to the negatively charged nitrogen vacancy center in diamond has the potential to enable the integration of defect qubits into established wafer scale device architectures for quantum information and sensing applications. Here, we demonstrate the design, fabrication, and characterization of photonic crystal cavities in 3C SiC films with incorporated ensembles of color centers and quality factor (Q) to mode volume ratios similar to those achieved in diamond. Simulations show that optimized H1 and L3 structures exhibit Q's as high as 45000 and mode volumes of approximately (λ/n) 3 . We utilize the internal color centers as a source of broadband excitation to characterize fabricated structures with resonances tuned to the color center zero phonon line and observe Q's in the range of 900–1500 with narrowband photoluminescence collection enhanced by up to a factor of 10. By comparing the Q factors observed for different geometries with finite-difference time-domain simulations, we find evidence that nonvertical sidewalls are likely the dominant source of discrepancies between our simulated and measured Q factors. These results indicate that defect qubits in 3C SiC thin films show clear promise as a simple, scalable platform for interfacing defect qubits with photonic, optoelectronic, and optomechanical devices
Four wave mixing in 3C SiC ring resonators
No full textWe demonstrate frequency conversion by four wave mixing at telecommunication wavelengths using an integrated platform in 3C SiC. The process was enhanced by high-Q and small modal volume ring resonators, allowing the use of mW-level continuous wave powers to pump the nonlinear optical process. From this measurement, we retrieved the nonlinear refractive index of 3C SiC as n2=(5.31±0.04)×10−19m2/W
Linear integrated optics in 3C silicon carbide
No full textThe development of new photonic materials that combine diverse optical capabilities is needed to boost the integration of different quantum and classical components within the same chip. Amongst all candidates, the superior optical properties of cubic silicon carbide (3C SiC) could be merged with its crystalline point defects, enabling single photon generation, manipulation and light-matter interaction on a single device. The development of photonics devices in SiC has been limited by the presence of the silicon substrate, over which thin crystalline films are heteroepitaxially grown. By employing a novel approach in the material fabrication, we demonstrate grating couplers with coupling efficiency reaching −6 dB, sub-µm waveguides and high intrinsic quality factor (up to 24,000) ring resonators. These components are the basis for linear optical networks and essential for developing a wide range of photonics component for non-linear and quantum optics
Nanophotonic source of quadrature squeezing via self phase modulation
No full textSqueezed light is optical beams with variance below the shot noise level. They are a key resource for quantum technologies based on photons, and they can be used to achieve better precision measurements and improve security in quantum key distribution channels and as a fundamental resource for quantum computation. Here, we demonstrate an integrated source of squeezing based on four-wave mixing that requires a single laser pump, measuring 0.45 dB of broadband quadrature squeezing at high frequencies. We identify and verify that the current results are limited by excess noise produced in the chip and propose ways to reduce it. Calculations suggest that an improvement in the optical properties of the chip achievable with existing technology can develop scalable quantum technologies based on ligh
High-Q/V photonic crystal cavities and QED analysis in 3C-SiC
No full textSolid state quantum emitters are among the most promising candidates for single photon generation in quantum technologies. However, they suffer from decoherence effects that limit their efficiency and indistinguishability. For instance, the radiation emitted in the zero phonon line (ZPL) of most color centers is on the order of a few percent (e.g., NV– centers in diamond, VSiVC in SiC), limiting the emission rate of single photons as well as the efficiency. At the same time, reliable interfacing with photons in an integrated manner still remains a challenge in both diamond and SiC technology. Here we develop photonic crystal cavities with Q factors in the order of 7100 in 3C SiC. We discuss how this high confinement cavity can significantly enhance the fraction of photons emitted in the ZPL and improve their characteristics. We study the requirements to place SiC color centers in the strong coupling condition and analyze the maximum attainable enhancement in the weak coupling regime. The robustness of the increased efficiency and improved indistinguishability can open the way to quantum technologies in the solid state
Dataset for “High-Q/V photonic crystal cavities and QED analysis in 3C-SiC”
No full textDataset supports: Chatzopoulos, I., Martini, F., Cernansky, R., & Politi, A. (2019). High-Q/V photonic crystal cavities and QED analysis in 3C-SiC. ACS Photonics.</span
Integrated quantum photonics
No full textThis paper reviews recent advances in integrated waveguide circuits, lithographically fabricated for quantum optics. With the increase in complexity of realizable quantum architectures, the need for stability and high quality nonclassical interference within large optical circuits has become a matter of concern in modern quantum optics. Using integrated waveguide structures, we demonstrate a high performance platform from which to further develop quantum technologies and experimental quantum physics using single photons. We review the performance of directional couplers in Hong-Ou-Mandel experiments, together with inherently stable interferometers with controlled phase shifts for quantum state preparation, manipulation, and measurement as well as demonstrating the first on-chip quantum metrology experiments. These fundamental components of optical quantum circuits are used together to construct integrated linear optical realizations of two-photon quantum controlled logic gates. The high quality quantum mechanical performance observed at the single photon level signifies their central role in future optical quantum technologie
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