1,721,228 research outputs found
Studio di modelli fisici per la simulazione di effetti di backgate e dispersione a bassa frequenza in GaAs MESFET
No full textIl lavoro di tesi presenta l'implementazione di un modello fisico deriva diffusione a doppio portatore per FET a doppio portatore. Effetti di trappoli e backgate sono inclusi. Il programma fornisce le caratteristiche DC e di piccolo segnale a partire dai parametri fisici di FET per alte frequenz
Immittance and S-parameter Based Criteriafor the Unconditional Stability of Linear Two-Ports: Relations and Invariance Properties
No full textSimulazione fisica della dispersione di bassa frequenza dei parametri di piccolo segnale di MESFET su GaAs
No full textModello non lineare di diodo a microonde basato sulle misure, e relativo sistema di acquisizione automatica dei dati
No full textPhysics-based two-dimensional numerical noise modelling of GaAs FETs: discussion and experimental validation
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Harmonic Load-Pull Techniques: An Overview of Modern Systems
No full textThe characterization of microwave devices under nonlinear conditions is fundamental for device technology development, to improve device large signal model accuracy and reliability, as well as an essential tool to support the design of power amplifiers (PAs). Since the input and output device terminations at fundamental and harmonics frequencies play a crucial role to set the device behaviors and performances, load-pull (LP) measurements are today one of the prominent characterization solutions at RF, micro-, and millimeter waves. In this article, a concise but comprehensive overview of the most important LP techniques available today is presented and pros and cons of the several approaches are highlighted and discusse
Generalized mixed-mode S-parameters
Full text linkThis paper presents an innovative approach to extend the S-parameter definition to multiport networks having conventional single-ended and differential ports, as is the case for operational amplifiers, transformers and baluns. To give maximum generality to this technique, for example, allowing for complex -parameter reference impedances, the mathematical derivation will be carried out with the most general definition of the -parameters. The presented approach gives the same results already published for circuits with differential ports only when the required simplifications are applied
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