1,721,072 research outputs found
A micromachined bistable 1 x 2 switch for optical fibers
No full textUsing bulk micromachining techniques, a 1x2 optical fiber switch has been fabricated. The optical signal is carried by a standard monomodal fiber. Switching is based on asymmetrical Joule heating of a Y-shaped cantilever structure by means of two integrated chromium thin film resistors; both electrical and optical properties are promising. A lock-release mechanism, based on silicon micromachined hooks, has also been tested. This mechanism allows the fabrication of a mechanically bistable device, that needs electrical power only during switching
A fabrication process for a silicon tunnel barrier with self-aligned gate
No full textA process for fabricating a device based on tunneling through a very thin vertical silicon membrane is presented. The process has been developed on a < 110 > oriented silicon wafer using high resolution e-beam lithography and KOH anisotropic etching to define the structure. A single evaporation step allows the fabrication of both the source-drain contacts and a control gate self aligned to the top of the silicon membrane. A vertical silicon membrane with a thickness of 15 nm has been obtained. (c) 2006 Elsevier B.V. All rights reserved
Silicon single-electron transistor fabricated by anisotropic etch and oxidation
No full textIn this work, we propose a fabrication process for a single-electron transistor on silicon. The process is developed on silicon on insulator wafer and it is based on electron beam lithography and KOH anisotropic etching. A structure composed by a small silicon isle connected to the leads by channels with triangular cross-section is obtained. Channel dimensions have been reduced by oxidation and the substrate has been used as backgate. Preliminary I-V characteristics show phenomena of charge/discharge at room temperature. (c) 2006 Elsevier B.V. All rights reserved
Selective doping of silicon nanowires by means of electron beam stimulated silicon dioxide etching
No full textDirect patterning of silicon dioxide by means of electron beam stimulated etching is shown, and a full characterization of exposure dose is presented. For its high dose, this technique is unsuitable for large areas but can be usefully employed like a precision scalpel for removing silicon dioxide by well-localized points. In this work, this technique is applied to the definition of windows through the oxide surrounding top down fabricated n-doped silicon nanowires. These windows will be employed for a selective doping of the nanowire by boron diffusion. In this way, pn junctions can be fabricated in well-localized points in the longitudinal direction of the nanowire, and an electrical contact to the different junctions can be provided. Electrical I-V characteristics of a nanowire with pn longitudinal junctions are reported and discussed.Direct patterning of silicon dioxide by means of electron beam stimulated etching is shown, and a full characterization of exposure dose is presented. For its high dose, this technique is unsuitable for large areas but can be usefully employed like a precision scalpel for removing silicon dioxide by well-localized points. In this work, this technique is applied to the definition of windows through the oxide surrounding top down fabricated n-doped silicon nanowires. These windows will be employed for a selective doping of the nanowire by boron diffusion. In this way, pn junctions can be fabricated in well-localized points in the longitudinal direction of the nanowire, and an electrical contact to the different junctions can be provided. Electrical I-V characteristics of a nanowire with pn longitudinal junctions are reported and discussed
Fabrication and characterization of silicon nanowires with triangular cross section
Full text linkFabrication processes for silicon nanowires with triangular cross section are presented. Processes based on high resolution electron beam lithography and anisotropic etching have been developed on silicon on insulator substrates. As shown by numerical simulations, the triangular shape of the wire allows strong reduction of the dimensions by successive oxidation steps. Moreover, it is easy to define a gate on top of the wire that wraps the device and, with the back gate silicon substrate, allows the biasing of the structure on all sides. The conduction through the wire, as a function of the gate bias and for different temperatures, is reported and discussed. (c) 2006 American Institute of Physics
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