1,720,976 research outputs found
Highly Linear Temperature Sensor Based on 4H-Silicon Carbide p-i-n Diodes
No full textThe linear dependence on temperature of the voltage drop difference measured on two diodes biased at different constant currents has been characterized in a range from room temperature up to 573 K. The realized proportional to absolute temperature sensor shows a good level of linearity and the corresponding rms error lower than 0.3%. Moreover, a maximum sensitivity of 610 μ V/K has been obtained, with an extrapolated output converging to 0 V at T=0 K, in agreement with theory and allowing a single-point temperature calibration
4H-SiC p-i-n diode as highly linear temperature sensor
No full textThe linear dependence on temperature of the voltage drop VD across a forward-biased 4H-SiC p-i-n diode is investigated experimentally. The results show that the fabricated temperature sensor has a high degree of linearity in the range from room temperature up to 573 K corresponding to a root-mean-square error lower than 0.5%. A maximum sensitivity of 2.66 mV/K was calculated. The low saturation current of the p-i-n diode, well below the forward biasing current also at high temperatures, reduces the nonlinear effects in the VD-T characteristic allowing the design and fabrication of highly linear sensors operating in a wider temperature range
High-Performance Temperature Sensor Based on 4H-SiC Schottky Diodes
No full textA high-performance temperature sensor based on coupled 4H-SiC Schottky diodes is presented. The linear dependence on temperature of the difference between the forward voltages appearing on two diodes biased at different constant currents, in a range from 30 °C up to 300 °C, was used for temperature sensing. A high sensitivity of 5.11 mV/°C was measured. This is, to the best of our knowledge, the first experimental result about a proportional-to-absoluteerature sensor made with SiC diodes, showing both a good degree of linearity and long-term stability performance
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