176 research outputs found
Replication Data for: Bird’s Decision to Shift the Direction of Migration Path Depends on the Position of Sun as well as Moon: A Directional Statistical Inference
No full textDataset for: Bird’s Decision to Shift the Direction of Migration
Path Depends on the Position of the Sun as well as Moon:
A Directional Statistical Inference
(Author: Prithwish Ghosh, Debashis Chatterjee, Amlan Banerjee
Band tailoring by annealing and current conduction of Co-doped ZnO transparent resistive switching memory
No full textThe switching characteristics of ITO/Zn1-xCoxO/ITO transparent resistive random access memories were studied. 5 mol% cobalt doped ZnO resistive layer improves bipolar switching properties. In addition, the redshift in band energy caused by doping of cobalt (Co) was studied. The doped memory device also showed a change in band energy by 0.1 eV when subjected to annealing of 400 °C. Annealing below 400 °C temperature did not show any characteristic changes. The film morphology analysis suggested the increase in roughness with annealing temperature, which can be seen from FESEM and AFM images. In this study annealing and Co doping effect on ZnO based non-volatile memory device is presented. Moreover, transparent memory devices with 90% transmittance at 550 nm wavelength have been reported. At low field and high field region Schottky emission and ionic conduction are dominated respectively
Enhanced synaptic linearity in ZnO-based invisible memristive synapse by introducing double pulsing scheme
No full textThe synaptic plasticity of indium tin oxide (ITO)/ZnO/ITO highly transparent (more than 88%) analog switching resistive memory device is investigated. Highly stable analog switching behavior for more than 2500 cycles with a good memory window of approximately two orders makes it suitable for synapse application. The synaptic response is investigated by applying identical electrical pulses. The potentiation and depression of the device used the conventional identical single-pulse scheme to perform high nonlinearity (0.83) and decaying training epochs. However, the linearity and the training epochs are improved to 0.44 by implementing the identical double-pulse scheme. The proposed double-pulse scheme offers a broad dynamic range (200) having 320 conductance states. This invisible structure and double-pulse scheme can be highly suitable for the neuromorphic computing devices
sj-pdf-1-lup-10.1177_09612033221090172 – Supplemental Material for “Interleukin 17A rs2275913 polymorphism is associated with susceptibility to systemic lupus erythematosus: A meta and trial sequential analysis”
No full textSupplemental Material, sj-pdf-1-lup-10.1177_09612033221090172 for “Interleukin 17A rs2275913 polymorphism is associated with susceptibility to systemic lupus erythematosus: A meta and trial sequential analysis” by Sunali Padhi, Surjyapratap Sarangi, Nisha Nayak, Debashis Barik, Abhijit Pati and Aditya K Panda in Lupus</p
sj-docx-1-pie-10.1177_09544089231165942 - Supplemental material for Investigations on nonlinear processes of a Gifford-McMahon type orifice pulse tube refrigerator
No full textSupplemental material, sj-docx-1-pie-10.1177_09544089231165942 for Investigations on nonlinear processes
of a Gifford-McMahon type orifice
pulse tube refrigerator by Debashis Panda, Manoj Kumar, Ashok K Satapathy, S K Sarangi and Upendra Behera in Proceedings of the Institution of Mechanical Engineers, Part E: Journal of Process Mechanical Engineering</p
sj-pdf-2-lup-10.1177_09612033221090172 – Supplemental Material for “Interleukin 17A rs2275913 polymorphism is associated with susceptibility to systemic lupus erythematosus: A meta and trial sequential analysis”
No full textSupplemental Material, sj-pdf-2-lup-10.1177_09612033221090172 for “Interleukin 17A rs2275913 polymorphism is associated with susceptibility to systemic lupus erythematosus: A meta and trial sequential analysis” by Sunali Padhi, Surjyapratap Sarangi, Nisha Nayak, Debashis Barik, Abhijit Pati and Aditya K Panda in Lupus</p
Practical Approach to Induce Analog Switching Behavior in Memristive Devices: Digital-to-Analog Transformation
No full textThe capability of memristor devices to perform weight changes upon electrical pulses mimics the analogous firing mechanism in biological synapses. This capability delivers the potential for neuromorphic computing and pushes renewed interests in fabricating memristor with analog characteristics. Nevertheless, memristors could often exhibit digital switching, either during the set, reset, or both processes that degenerate their synaptic capability, and nanodevice engineers struggle to redesign the device to achieved analog switching. This chapter overviews some important techniques to transform the switching characteristics from digital to analog in valence change and electrochemical metallization types memristors. We cover physical dynamics involving interfacial diffusion, interfacial layer, barrier layer, deposition, and electrode engineering that can induce digital-to-analog switching transformation in memristor devices
Status and Prospects of ZnO-Based Resistive Switching Memory Devices
No full textIn the advancement of the semiconductor device technology, ZnO could be a prospective alternative than the other metal oxides for its versatility and huge applications in different aspects. In this review, a thorough overview on ZnO for the application of resistive switching memory (RRAM) devices has been conducted. Various efforts that have been made to investigate and modulate the switching characteristics of ZnO-based switching memory devices are discussed. The use of ZnO layer in different structure, the different types of filament formation, and the different types of switching including complementary switching are reported. By considering the huge interest of transparent devices, this review gives the concrete overview of the present status and prospects of transparent RRAM devices based on ZnO. ZnO-based RRAM can be used for flexible memory devices, which is also covered here. Another challenge in ZnO-based RRAM is that the realization of ultra-thin and low power devices. Nevertheless, ZnO not only offers decent memory properties but also has a unique potential to be used as multifunctional nonvolatile memory devices. The impact of electrode materials, metal doping, stack structures, transparency, and flexibility on resistive switching properties and switching parameters of ZnO-based resistive switching memory devices are briefly compared. This review also covers the different nanostructured-based emerging resistive switching memory devices for low power scalable devices. It may give a valuable insight on developing ZnO-based RRAM and also should encourage researchers to overcome the challenges
Improving linearity by introducing Al in HfO<sub>2</sub> as a memristor synapse device
No full textArtificial synapse having good linearity is crucial to achieve an efficient learning process in neuromorphic computing. It is found that the synaptic linearity can be enhanced by engineering the doping region across the switching layer. The nonlinearity of potentiation and depression of the pure device is 36% and 91%, respectively; meanwhile, the nonlinearity after doping can be suppressed to be 22% (potentiation) and 60% (depression). Henceforth, the learning accuracy of the doped device is 91% with only 13 iterations; meanwhile, the pure device is 78%. A detailed conduction mechanism to understand this phenomenon is proposed
Flexible Ta2O5/WO3-based memristor synapse for wearable and neuromorphic applications
No full textIn this letter, Ta 2 O 5 /WO 3 double-layer wearable memristor synapse has excellent recognition accuracy (97%) for just 12 epochs compared to the single-layer device (83%). The insertion of an ultra-thin WO 3 layer modulates the oxygen vacancy distribution in Ta 2 O 5 and induces digital-to-analog switching behavior. Excellent AC endurance of (>10 9 cycles) under 2 mm extreme bending, a rapid speed (25 ns), reliable bending endurance for 10 4 cycles with 4 mm bending, stable retention (>10 6 s) up to 200°C, and water-resistant behavior are achieved. The potentiation, and depression having outstanding nonlinearity (0.64) is obtained. The Ta 2 O 5 /WO 3 design is a promising candidate for wearable neuromorphic applications due to its wearability, flexibility, lightweight, low cost and environmental friendly fabrication
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